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公开(公告)号：US20180315759A1
公开(公告)日：2018-11-01
申请号：US15920468
申请日：2018-03-14
Inventor： Chia-Liang Liao , Feng-Yi Chang , Fu-Che Lee , Chieh-Te Chen , Yi-Wang Zhan
IPC: H01L27/108 , H01L21/768 , H01L21/311 , H01L23/532 , H01L23/535
Abstract: A method for fabricating semiconductor device includes the steps of: providing a material layer having a contact pad therein; forming a dielectric layer on the material layer and the contact pad; forming a doped oxide layer on the dielectric layer; forming an oxide layer on the doped oxide layer; performing a first etching process to remove part of the oxide layer, part of the doped oxide layer, and part of the dielectric layer to form a first contact hole; performing a second etching process to remove part of the doped oxide layer to form a second contact hole; and forming a conductive layer in the second contact hole to form a contact plug.
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公开(公告)号：US20230268246A1
公开(公告)日：2023-08-24
申请号：US18136329
申请日：2023-04-18
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chia-Liang Liao , Purakh Raj Verma , Ching-Yang Wen , Chee Hau Ng
IPC: H01L23/373 , H01L21/48 , H01L23/15
CPC classification number: H01L23/3735 , H01L21/4871 , H01L23/15 , H01L23/3736
Abstract: A semiconductor structure includes a glass substrate and a device structure. The glass substrate includes a glass layer, a heat dissipation layer and a silicon nitride layer stacked from bottom to top. The device structure includes at least one semiconductor device integrated in a device layer situated over the silicon nitride layer of the glass substrate. Or, the glass substrate includes a glass layer and a silicon nitride layer stacked from bottom to top. The device structure includes at least one semiconductor device integrated in a device layer, and a heat dissipation layer is stacked on the device layer, wherein the heat dissipation layer is bonded with the silicon nitride layer of the glass substrate. The present invention also provides a method of wafer bonding for manufacturing said semiconductor structure.
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公开(公告)号：US11670567B2
公开(公告)日：2023-06-06
申请号：US16924206
申请日：2020-07-09
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chia-Liang Liao , Purakh Raj Verma , Ching-Yang Wen , Chee Hau Ng
IPC: H01L23/373 , H01L21/48 , H01L23/15
CPC classification number: H01L23/3735 , H01L21/4871 , H01L23/15 , H01L23/3736
Abstract: A semiconductor structure includes a glass substrate and a device wafer. The glass substrate includes a glass layer, a heat dissipation layer and a silicon nitride layer stacked from bottom to top. The device wafer includes at least one semiconductor device integrated in a device layer situated over the silicon nitride layer of the glass substrate. Or, the glass substrate includes a glass layer and a silicon nitride layer stacked from bottom to top. The device wafer includes at least one semiconductor device integrated in a device layer, and a heat dissipation layer is stacked on the device layer, wherein the heat dissipation layer is bonded with the silicon nitride layer of the glass substrate. The present invention also provides a method of wafer bonding for manufacturing said semiconductor structure.
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公开(公告)号：US10795255B2
公开(公告)日：2020-10-06
申请号：US16175858
申请日：2018-10-31
Inventor： Wei-Lun Hsu , Gang-Yi Lin , Yu-Hsiang Hung , Ying-Chih Lin , Feng-Yi Chang , Ming-Te Wei , Shih-Fang Tzou , Fu-Che Lee , Chia-Liang Liao
IPC: G03F1/36 , H01L23/538 , G03F1/38 , H01L21/033 , H01L21/308 , G03F1/00 , G03F7/20 , G03F7/00 , H01L27/108
Abstract: A method of forming a layout definition of a semiconductor device includes the following steps. Firstly, a plurality of first patterns is established to form a material layer over a substrate, with the first patterns being regularly arranged in a plurality of columns along a first direction to form an array arrangement. Next, a plurality of second patterns is established to surround the first patterns. Then, a third pattern is established to form a blocking layer on the material layer, with the third pattern being overlapped with a portion of the second patterns and with at least one of the second patterns being partially exposed from the third pattern. Finally, the first patterns are used to form a plurality of first openings in a stacked structure on the substrate to expose a portion of the substrate respectively.
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公开(公告)号：US10535610B2
公开(公告)日：2020-01-14
申请号：US16003090
申请日：2018-06-07
Inventor： Feng-Yi Chang , Fu-Che Lee , Yi-Wang Zhan , Chia-Liang Liao , Yu-Cheng Tung , Chien-Hao Chen , Chia-Hung Wang
IPC: H01L23/544 , H01L27/108 , H01L21/311
Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a substrate having a scribe line region. A material layer is formed on the scribe line region and has a rectangular region defined therein. The rectangular region has a pair of first edges parallel with a widthwise direction of the scribe line region and a pair of second edges parallel with a lengthwise direction of the scribe line region. A pair of first alignment features is formed in the material layer along the first edges, and a pair of second alignment features is formed in the material layer along the second edges. The space between the pair of first alignment features is larger than a space between the pair of the second alignment features.
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Patent Agency Ranking
公开(公告)号：US12300534B2
公开(公告)日：2025-05-13
申请号：US17880685
申请日：2022-08-04
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chia-Liang Liao , Chee Hau Ng , Ching-Yang Wen , Purakh Raj Verma
IPC: H01L21/762 , H01L21/304 , H01L21/768
Abstract: A method of forming a protective layer utilized in a silicon remove process includes bonding a first wafer to a second wafer, wherein the first wafer comprises a first silicon substrate with a first device structure disposed thereon and the second wafer comprises a second silicon substrate with a second device structure disposed thereon. After that, a first trim process is performed to thin laterally an edge of the first wafer and an edge of the second device structure. After the first trim process, a protective layer is formed to cover a back side of the second silicon substrate. After forming the protective layer, a silicon remove process is performed to remove only the first silicon substrate.
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公开(公告)号：US12080622B2
公开(公告)日：2024-09-03
申请号：US18136329
申请日：2023-04-18
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chia-Liang Liao , Purakh Raj Verma , Ching-Yang Wen , Chee Hau Ng
IPC: H01L23/373 , H01L21/48 , H01L23/15
CPC classification number: H01L23/3735 , H01L21/4871 , H01L23/15 , H01L23/3736
Abstract: A semiconductor structure includes a glass substrate and a device structure. The glass substrate includes a glass layer, a heat dissipation layer and a silicon nitride layer stacked from bottom to top. The device structure includes at least one semiconductor device integrated in a device layer situated over the silicon nitride layer of the glass substrate. Or, the glass substrate includes a glass layer and a silicon nitride layer stacked from bottom to top. The device structure includes at least one semiconductor device integrated in a device layer, and a heat dissipation layer is stacked on the device layer, wherein the heat dissipation layer is bonded with the silicon nitride layer of the glass substrate. The present invention also provides a method of wafer bonding for manufacturing said semiconductor structure.
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公开(公告)号：US20220013430A1
公开(公告)日：2022-01-13
申请号：US16924206
申请日：2020-07-09
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chia-Liang Liao , Purakh Raj Verma , Ching-Yang Wen , Chee Hau Ng
IPC: H01L23/373 , H01L23/15 , H01L21/48
Abstract: A semiconductor structure includes a glass substrate and a device wafer. The glass substrate includes a glass layer, a heat dissipation layer and a silicon nitride layer stacked from bottom to top. The device wafer includes at least one semiconductor device integrated in a device layer situated over the silicon nitride layer of the glass substrate. Or, the glass substrate includes a glass layer and a silicon nitride layer stacked from bottom to top. The device wafer includes at least one semiconductor device integrated in a device layer, and a heat dissipation layer is stacked on the device layer, wherein the heat dissipation layer is bonded with the silicon nitride layer of the glass substrate. The present invention also provides a method of wafer bonding for manufacturing said semiconductor structure.
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公开(公告)号：US20190035743A1
公开(公告)日：2019-01-31
申请号：US16003090
申请日：2018-06-07
Inventor： Feng-Yi Chang , Fu-Che Lee , Yi-Wang Zhan , Chia-Liang Liao , Yu-Cheng Tung , Chien-Hao Chen , Chia-Hung Wang
IPC: H01L23/544 , H01L27/108
CPC classification number: H01L23/544 , H01L21/31116 , H01L21/31144 , H01L27/108 , H01L27/10808 , H01L27/10852 , H01L2223/5442 , H01L2223/54426 , H01L2223/5446
Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a substrate having a scribe line region. A material layer is formed on the scribe line region and has a rectangular region defined therein. The rectangular region has a pair of first edges parallel with a widthwise direction of the scribe line region and a pair of second edges parallel with a lengthwise direction of the scribe line region. A pair of first alignment features is formed in the material layer along the first edges, and a pair of second alignment features is formed in the material layer along the second edges. The space between the pair of first alignment features is larger than a space between the pair of the second alignment features.
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公开(公告)号：US12278210B2
公开(公告)日：2025-04-15
申请号：US17883595
申请日：2022-08-08
Applicant: United Microelectronics Corp.
Inventor： Sheng Zhang , Kai Zhu , Chien-Kee Pang , Chia-Liang Liao
Abstract: Provided is a manufacturing method of a semiconductor structure. The manufacturing method includes the following steps. A first dielectric layer is formed on a first substrate. A second dielectric layer is formed on a second substrate. A first heat treatment is performed on the first dielectric layer and the second dielectric layer, wherein a temperature of the first heat treatment is between 300° C. and 400° C. A first conductive via is formed in the first dielectric layer. A second conductive via is formed in the second dielectric layer. The first substrate and the second substrate are bonded in a manner that the first dielectric layer faces the second dielectric layer, so as to connect the first conductive via and the second conductive via.
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