公开(公告)号：US4198283A

公开(公告)日：1980-04-15

申请号：US957698

申请日：1978-11-06

申请人： Walter H. Class ,  George J. Unterkofler ,  Steven D. Hurwitt

发明人： Walter H. Class ,  George J. Unterkofler ,  Steven D. Hurwitt

IPC分类号： H01J37/34 ,  C23C15/00

CPC分类号： H01J37/3423 ,  H01J37/3408 ,  H01J37/3435

摘要： A magnetron cathode assembly for use in a cathode sputtering apparatus includes a support means for a rectangular frame-like annular target and spaced apart inner and outer pole pieces fastened to the support member and providing a rectangular annular channel for mounting the target in electrically and thermally conductive contact with the support means. Preferably, the target is a set of four straight bars shaped at the ends to assemble together as a rectangular frame. Target bars having a symmetrical hourglass cross section with overhanging flanged side portions adjacent to front and rear faces are adapted to be reversibly clamped to the support means by the inner and outer poles for simple and rapid replacement in the field, said hourglass shape providing maximum utilization of target material.

摘要翻译： 用于阴极溅射装置的磁控管阴极组件包括用于矩形框状环状靶的支撑装置和紧固到支撑构件的间隔开的内极和外极片，并提供矩形环形通道，用于将电极和热安装 与支撑装置导电接触。 优选地，目标是在端部处成形为四个直杆的组合，以将其组装成矩形框架。 具有对称沙漏横截面的目标杆具有与前后表面相邻的凸出的凸缘侧部分，适于通过内外极杆可逆地夹紧到支撑装置上，以便在现场进行简单和快速的更换，所述沙漏形状提供最大的利用率 的目标材料。

公开(公告)号：US4472259A

公开(公告)日：1984-09-18

申请号：US316433

申请日：1981-10-29

申请人： Walter H. Class ,  Arnold J. Aronson ,  Steven D. Hurwitt ,  Michael L. Hill

发明人： Walter H. Class ,  Arnold J. Aronson ,  Steven D. Hurwitt ,  Michael L. Hill

IPC分类号： H01J37/34 ,  C23C15/00

CPC分类号： H01J37/3405

摘要： A cathode assembly for use in a magnetron sputtering system, the system having a cathode assembly with parallel elongated target segments which are formed substantially of a material which is desired to be sputter-deposited onto a substrate. The elongated target segments are each provided with a material removal surface which is inclined toward the other segment with respect to the plane of the substrate. Such inclination permits the material which is removed from the target bars to be focused onto a relatively narrow area, thereby improving the efficiency of the sputtering operation and reducing machine down-time for cleaning and vacuum pumping. In other embodiments, end target segments are provided for improving the efficiency of film deposition near the ends of the elongated bars. The end target segments are provided with material removal surfaces which are also inclined, and connect with the elongated target segments to form a rectangular frame arrangement.

摘要翻译： 一种用于磁控溅射系统的阴极组件，该系统具有阴极组件，该阴极组件具有基本上由期望溅射沉积到衬底上的材料形成的平行细长靶区段。 细长的目标区段各自设置有相对于基板的平面朝向另一个段倾斜的材料去除表面。 这种倾斜允许将从目标棒移除的材料聚焦到相对较窄的区域上，从而提高溅射操作的效率并减少清洗和真空泵送的机器停机时间。 在其他实施例中，提供端部目标段用于提高细长杆端部附近的膜沉积的效率。 末端目标区段设置有也倾斜的材料去除表面，并且与细长目标区段连接以形成矩形框架布置。

公开(公告)号：US4525262A

公开(公告)日：1985-06-25

申请号：US555449

申请日：1983-11-28

申请人： Walter H. Class ,  Steven D. Hurwitt ,  Michael L. Hill

发明人： Walter H. Class ,  Steven D. Hurwitt ,  Michael L. Hill

IPC分类号： H01J37/34 ,  C23C15/00

CPC分类号： H01J37/3405

摘要： The film deposition rate of metallic compounds onto a substrate in a vacuum chamber by reactive sputtering or reactive ion plating is significantly increased by providing a substrate support with spaced apart magnetic poles to create a magnetic field having lines of force which leave the support, extend across a surface of the substrate exposed to a metallic coating source and re-enter the support to enclose the exposed surface in a localized magnetic electron-trapping field. A reactive gas is fed into the chamber, and a bias voltage is applied to the substrate support sufficient to create a dense glow discharge of ionized reactive gas closely adjacent to the substrate surface. The reactive gas ions react with metallic particles deposited on the exposed substrate surface from the coating source to form a film of the desired metallic compound. The localized magnetic plasma trap close to the substrate increases the chemical reaction rate at the substrate and reduces back sputtering, to result in a metallic compound coating having superior physical and chemical characteristics.

摘要翻译： 通过反应溅射或反应离子电镀在真空室中的金属化合物在基板上的成膜速率通过提供具有间隔开的磁极的基板支撑而产生具有离开载体的力线的磁场而显着增加 所述基板的表面暴露于金属涂层源并重新进入所述支撑件以将所述暴露表面包围在局部磁性电子捕获场中。 将反应性气体进料到室中，并且将偏置电压施加到衬底支撑件，足以产生与衬底表面紧密相邻的电离反应气体的致密辉光放电。 反应气体离子与沉积在暴露的基底表面上的金属颗粒与涂层源反应，形成所需金属化合物的膜。 靠近基板的局部磁等离子体阱增加了基板的化学反应速率，并减少了反溅射，从而导致具有优异的物理和化学特性的金属化合物涂层。

公开(公告)号：US4428816A

公开(公告)日：1984-01-31

申请号：US497798

申请日：1983-05-25

申请人： Walter H. Class ,  Robert G. Hieronymi ,  Steven D. Hurwitt

发明人： Walter H. Class ,  Robert G. Hieronymi ,  Steven D. Hurwitt

IPC分类号： C23C14/36 ,  C23C14/35 ,  H01J37/34 ,  C23C15/00

CPC分类号： H01J37/3423 ,  H01J37/3408

摘要： A cathode assembly for use in a magnetron sputtering system, the system having a cathode assembly with parallel elongated target segments which are formed substantially of a material which is desired to be sputter-deposited onto a substrate. The elongated target segments are each provided with a material removal surface which is inclined toward the other segment with respect to the plane of the substrate. Such inclination permits the material which is removed from the target bars to be focused onto a relatively narrow area, thereby improving the efficiency of the sputtering operation and reducing machine down-time for cleaning and vacuum pumping. End target segments are provided for improving the efficiency of film deposition near the ends of the elongated bars. The end target segments are provided with material removal surfaces which are also inclined, and connect with the elongated target segments to form a rectangular frame arrangement. An elongated inner pole piece has outwardly extending portions near each end to improve uniformity of a trapping magnetic field between the inner pole piece and a rectangular annular outer pole piece.

摘要翻译： 一种用于磁控溅射系统的阴极组件，该系统具有阴极组件，该阴极组件具有基本上由期望溅射沉积到衬底上的材料形成的平行细长靶区段。 细长的目标区段各自设置有相对于基板的平面朝向另一个段倾斜的材料去除表面。 这种倾斜允许将从目标棒移除的材料聚焦到相对较窄的区域上，从而提高溅射操作的效率并减少清洗和真空泵送的机器停机时间。 提供末端靶区段以提高在细长杆的端部附近的膜沉积的效率。 末端目标区段设置有也倾斜的材料去除表面，并且与细长目标区段连接以形成矩形框架布置。 细长的内极片在每端附近具有向外延伸的部分，以提高内极片与矩形环形外极片之间的捕获磁场的均匀性。

公开(公告)号：US4581118A

公开(公告)日：1986-04-08

申请号：US461022

申请日：1983-01-26

申请人： Walter H. Class ,  Steven D. Hurwitt ,  Lin I

发明人： Walter H. Class ,  Steven D. Hurwitt ,  Lin I

IPC分类号： C23C14/36 ,  C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L21/203 ,  H01L21/31 ,  C23C14/50

CPC分类号： H01J37/3405 ,  C23C14/351

摘要： A substrate support electrode for use in plasma processing equipment has a book-shaped prismatic body containing a magnet core with flange-like pole pieces at each end to provide a longitudinal magnetic field wrapped around the electrode body. An auxiliary field-shaping magnet spaced from a substrate support face of the electrode body, with each of its poles adjacent to the pole piece electrode body with each of its poles adjacent to the of like polarity of the electrode, flattens the magnetic field adjacent to the electrode support surface to produce a thin plasma of substantially uniform thickness close to the electrode surface.

摘要翻译： 用于等离子体处理设备的基板支撑电极具有书形棱柱体，其包含在每个端部具有凸缘状极片的磁芯，以提供缠绕在电极体上的纵向磁场。 与电极体的基板支撑面间隔开的辅助场成形磁体，其每个磁极与极片电极体相邻，其极点与电极的相似极性相邻，使与磁极相邻的磁场平坦化 电极支撑表面以产生接近电极表面的基本上均匀厚度的薄等离子体。

公开(公告)号：US4422896A

公开(公告)日：1983-12-27

申请号：US342976

申请日：1982-01-26

申请人： Walter H. Class ,  Steven D. Hurwitt ,  Michael L. Hill ,  Marvin K. Hutt

发明人： Walter H. Class ,  Steven D. Hurwitt ,  Michael L. Hill ,  Marvin K. Hutt

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01J37/32 ,  H01J37/34 ,  H01L21/3065 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01J37/32623 ,  C23F4/00 ,  H01J37/3266 ,  H01J37/3405

摘要： Method and apparatus are disclosed for plasma treating a substrate in a hermetic chamber with a magnetic field having lines of force which leave a support, extend across the surface of the substrate and re-enter the support to enclose the substrate exposed surface in a magnetic electron-trapping field. The voltage applied to the substrate support is adjusted to produce a dense glow discharge closely adjacent the substrate surface for reacting chemically therewith.

摘要翻译： 公开了用于等离子体处理密封室中的衬底的方法和装置，其中具有留下支撑件的力线的磁场延伸穿过衬底的表面并重新进入支撑件以将衬底暴露表面包围在磁性电子 捕捉字段。 调节施加到基板支撑件上的电压以产生与基板表面紧密相邻的致密辉光放电，以与其进行化学反应。

公开(公告)号：US5346601A

公开(公告)日：1994-09-13

申请号：US60315

申请日：1993-05-11

申请人： Andrew Barada ,  Steven D. Hurwitt

发明人： Andrew Barada ,  Steven D. Hurwitt

IPC分类号： C23C14/34 ,  C23C14/00 ,  C23C14/04 ,  H01L21/203

CPC分类号： C23C14/046 ,  C23C14/0068

摘要： A sputter coating apparatus particularly useful for applying sputtered films, particularly reactively produced sputtered films such as titanium nitride, onto semiconductor wafers, is provided with a collimator that includes a grid of vanes for restricting the paths available for the sputtered material to take from the target toward the wafer. A flow of fresh reactive gas is maintained on the surface of the wafer by gas outlets carried by vanes of the collimator. The outlets are supplied with the gas through passages provided in the vanes, so that the gas supply does not contribute to the shadowing of the sputtered material from the wafer except in accordance with the intended shadowing for which the collimator is provided.

摘要翻译： 特别可用于将溅射膜，特别是反应生成的溅射膜（例如氮化钛）施加到半导体晶片上的溅射涂覆设备设置有准直器，该准直器包括用于限制溅射材料从靶中取出的路径 朝向晶圆。 通过由准直器的叶片承载的气体出口，在晶片的表面上保持新鲜的活性气体流。 出口通过设置在叶片中的通道供应气体，使得气体供应不对来自晶片的溅射材料的阴影有贡献，除了根据预定的准直器设置的阴影外。

公开(公告)号：US5080772A

公开(公告)日：1992-01-14

申请号：US572850

申请日：1990-08-24

申请人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi

发明人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/345 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/542

摘要： A bias sputter coating apparatus is provided with a cathode target assembly having a central electrode which is maintainable at an adjustable voltage level which is negative with respect to the chamber anode but positive with respect to the cathode voltage and the bias voltage on the substrate. The apparatus is used to manufacture sputter coated articles such as semiconductor wafers. The method provides that the voltage on the central electrode is adjusted to a level which improves the ion flux distribution uniformity on the substrate. The electrode voltage is generally optimized in the range of from -8 volts to -20 volts.

摘要翻译： 偏置溅射涂覆装置设置有阴极靶组件，阴极靶组件具有中心电极，该中心电极可维持在相对于室阳极为负的可调电压电平，而相对于衬底上的阴极电压和偏置电压为正。 该设备用于制造诸如半导体晶片的溅射涂覆制品。 该方法提供了将中心电极上的电压调整到提高衬底上的离子通量分布均匀性的水平。 电极电压通常在-8伏至-20伏的范围内优化。

公开(公告)号：US5415753A

公开(公告)日：1995-05-16

申请号：US95950

申请日：1993-07-22

申请人： Steven D. Hurwitt ,  Israel Wagner

发明人： Steven D. Hurwitt ,  Israel Wagner

IPC分类号： C23C14/34 ,  C23C14/00 ,  C23C14/04 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285

CPC分类号： H01J37/3447 ,  C23C14/0068 ,  C23C14/044 ,  H01J37/34 ,  H01J37/347

摘要： The aperture plate of the present invention is positioned between a sputter target and a substrate to be coated with a film of target material. The substantially non-collimating plate contains a plurality of apertures which intercept a percentage of the sputter particles while allowing other sputter particles to be deposited upon the substrate to form the film. The rate of deposition achieved by the aperture plate is less than the rate of sputtering so that the target may be sputtered at a sufficiently higher rate to reduce the formation of a reactant film on the sputter target while the deposition rate is sufficiently low to allow adequate reaction between a reactive gas and sputter particles to form the desired reactant film on the substrate. In accordance with another aspect of the invention, the apertures of the plate have different aspect ratios or different densities in various different regions of the plate to achieve various different deposition rates in different areas of the substrate. The aspect ratios of the apertures may be selectively varied to achieve a more uniform film thickness or a film of selectively varied thicknesses. The various aspect ratios are achieved by selectively varying a cross-sectional area and/or depth of the apertures in the plate.

摘要翻译： 本发明的孔板位于溅射靶和被覆材料的基片之间。 基本上非准直板包含多个孔，其拦截一定百分比的溅射颗粒，同时允许其它溅射颗粒沉积在基板上以形成膜。 通过孔板实现的沉积速度小于溅射速率，从而可以以足够高的速率溅射靶，以减少溅射靶上的反应物膜的形成，同时沉积速率足够低以允许足够的 反应气体和溅射颗粒之间的反应，以在衬底上形成所需的反应物膜。 根据本发明的另一方面，板的孔在板的各种不同区域具有不同的纵横比或不同的密度，以在基板的不同区域中实现各种不同的沉积速率。 可以选择性地改变孔的纵横比以实现更均匀的膜厚度或选择性变化的厚度的膜。 通过选择性地改变板中的孔的横截面面积和/或深度来实现各种纵横比。

公开(公告)号：US4909695A

公开(公告)日：1990-03-20

申请号：US222327

申请日：1988-07-20

申请人： Steven D. Hurwitt ,  Miroslav Eror ,  Richard E. Biehl

发明人： Steven D. Hurwitt ,  Miroslav Eror ,  Richard E. Biehl

IPC分类号： H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67748 ,  H01L21/67017 ,  H01L21/67751 ,  H01L21/67778 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/139

摘要： The apparatus is provided with a main chamber divided into two chamber halves by a rotatable index plate. The plate rotates through a load lock station, through which wafer-like articles are inserted into and removed from the main chamber, and a series of processing stations, at each of which a process such as etching or sputter coating can be performed simultaneously upon different objects and sequentially upon the same objects. Each processing chamber is isolatable from the main chamber and other processing chambers during processing so that different substrates can be processed simultaneously at the various stations using different processes without cross contamination. Substrate holders resiliently mounted on the plate move transversely when compressed between a cup shaped back-plane device and the main chamber wall to separately seal each of the processing chambers from the main chamber.

摘要翻译： 该装置具有通过可旋转的折射板分成两个室半部的主室。 板旋转穿过负载锁定站，晶片状物品通过该装载锁定站插入主室和从主室移除，并且一系列处理站，每个处理站可以在不同的位置同时执行诸如蚀刻或溅射涂覆的工艺 对象并依次在相同的对象上。 每个处理室在处理过程中可与主室和其他处理室隔离，以便不同的基板可以使用不同的工艺在不同的工位处同时处理，而不会产生交叉污染。 弹性地安装在板上的基板固定件在杯形背面装置和主室壁之间被压缩时横向移动，以将每个处理室与主室单独地密封。