公开(公告)号：US5080772A

公开(公告)日：1992-01-14

申请号：US572850

申请日：1990-08-24

申请人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi

发明人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/345 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/542

摘要： A bias sputter coating apparatus is provided with a cathode target assembly having a central electrode which is maintainable at an adjustable voltage level which is negative with respect to the chamber anode but positive with respect to the cathode voltage and the bias voltage on the substrate. The apparatus is used to manufacture sputter coated articles such as semiconductor wafers. The method provides that the voltage on the central electrode is adjusted to a level which improves the ion flux distribution uniformity on the substrate. The electrode voltage is generally optimized in the range of from -8 volts to -20 volts.

摘要翻译： 偏置溅射涂覆装置设置有阴极靶组件，阴极靶组件具有中心电极，该中心电极可维持在相对于室阳极为负的可调电压电平，而相对于衬底上的阴极电压和偏置电压为正。 该设备用于制造诸如半导体晶片的溅射涂覆制品。 该方法提供了将中心电极上的电压调整到提高衬底上的离子通量分布均匀性的水平。 电极电压通常在-8伏至-20伏的范围内优化。

公开(公告)号：US5126028A

公开(公告)日：1992-06-30

申请号：US570943

申请日：1990-08-22

申请人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi ,  Charles Van Nutt ,  Richard C. Edwards ,  Donald A. Messina

发明人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi ,  Charles Van Nutt ,  Richard C. Edwards ,  Donald A. Messina

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/54 ,  H01J37/34

CPC分类号： H01J37/32935 ,  C23C14/04 ,  C23C14/046 ,  C23C14/3407 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3458 ,  H01J2237/3327

摘要： A sputter coating apparatus displays set and alternative machine parameters, entered or calculated from entered or measured data, for selection by the operator. The apparatus performs a sputter coating process to produce sputter coated articles in accordance with the selected machine parameters. Process parameters familiar to the person creating the process, such as desired coating thickness and desired deposition rate, may be entered by the operator. Measured data such as actual coating thickness at a plurality of points on a previously processed wafer may be entered by an operator or automatically measured from a wafer. Alternative machine parameters such as target sputtering power may be entered by an operator or calculated from entered process parameters or measured data. The operator selects and initiates a process in accordance with the selections by entering commands. The machine parameters control separately the sputtering from different regions of the sputtering surface of a one piece sputtering target by alternately energizing different plasmas over the different target regions and energizing the target in accordance with different machine parameters.

摘要翻译： 溅射涂层设备显示由输入或测量数据输入或计算的设置和替代机器参数，以供操作员选择。 该设备执行溅射涂覆工艺以根据所选择的机器参数产生溅射涂覆的物品。 可以由操作者输入创建该过程的人熟悉的工艺参数，例如所需的涂层厚度和所需的沉积速率。 在先前处理的晶片上的多个点处的实际涂层厚度的测量数据可以由操作者输入或者从晶片自动测量。 可以由操作者输入替代的机器参数，例如目标溅射功率，或从输入的过程参数或测量数据计算。 操作人员通过输入命令，根据选择选择并启动进程。 机器参数通过在不同的目标区域上交替地激励不同的等离子体，并根据不同的机器参数对目标进行激励，分别地控制一片溅射靶的溅射表面的不同区域的溅射。

公开(公告)号：US4957605A

公开(公告)日：1990-09-18

申请号：US339308

申请日：1989-04-17

申请人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi ,  Charles Van Nutt

发明人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi ,  Charles Van Nutt

IPC分类号： C23C14/35 ,  C23C14/04 ,  C23C14/34 ,  C23C14/54 ,  H01J37/34

CPC分类号： H01J37/32935 ,  C23C14/04 ,  C23C14/046 ,  C23C14/3407 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3458 ,  H01J2237/3327

摘要： A magnetron sputtering method and apparatus employing a one-piece annular target having a concave continuously smooth surface with an inwardly facing portion close to and surrounding the outer edge of a stepped wafer provides a sputtering surface with areas facing the differently facing surfaces of the wafer steps. Two concentric erosion zones on the target surface are independently energized at different electrical parameter values by synchronizing the power applied to the single target with switched activation of plasmas overlying the respective target regions which define the erosion zones. The electrical parameters and the geometry are established so as to uniformly coat the differently facing surfaces of the stepped wafer. During part of the duty cycle during which each target region is energized, parameters may be measured. Such parameters may be those which vary with changes in geometry as for example may be due to target erosion. The operation of different target regions, such as the duty cycles or power levels for such regions, may be separately varied in response to the measurements or otherwise, to maintain uniform substrate coating as the target erodes. The target is thicker under the outer region and has an annular pole piece embedded to reduce the space separating the target erosion regions, and includes means to cool the target and reinforce it against thermal expansion.

公开(公告)号：US4871433A

公开(公告)日：1989-10-03

申请号：US95560

申请日：1987-09-10

申请人： Israel Wagner ,  Steven D. Hurwitt

发明人： Israel Wagner ,  Steven D. Hurwitt

IPC分类号： C23C14/35 ,  H01J37/34

CPC分类号： H01J37/3405 ,  C23C14/351

摘要： A magnetron sputtering apparatus and method, in which the ion flux bombarding the substrate is made uniform. Countermagnet means are chosen and positioned such that the vertical components of the countermagnet field are of opposite direction and equal magnitude to the vertical components of the cathode magnet in the vicinity of the substrate. Thus, the cathode magnetic field lines become substantially flat in the vicinity of the substrate and do not cause the ion flux to be distributed on the substrate surface in a non-uniform manner. Measurement of ion current density on the substrate surface during operation of the invention reveals that the invention provides substantially constant flux at all points on the substrate surface.

摘要翻译： 一种磁控溅射装置和方法，其中轰击衬底的离子通量均匀。 反磁铁装置被选择和定位成使得反磁铁场的垂直分量与基板附近的阴极磁体的垂直分量具有相反的方向和相等的大小。 因此，阴极磁场线在基板附近变得基本平坦，并且不会使离子通量以不均匀的方式分布在基板表面上。 在本发明的操作期间测量衬底表面上的离子电流密度揭示了本发明在衬底表面上的所有点提供基本上恒定的通量。

公开(公告)号：US5415753A

公开(公告)日：1995-05-16

申请号：US95950

申请日：1993-07-22

申请人： Steven D. Hurwitt ,  Israel Wagner

发明人： Steven D. Hurwitt ,  Israel Wagner

IPC分类号： C23C14/34 ,  C23C14/00 ,  C23C14/04 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285

CPC分类号： H01J37/3447 ,  C23C14/0068 ,  C23C14/044 ,  H01J37/34 ,  H01J37/347

摘要： The aperture plate of the present invention is positioned between a sputter target and a substrate to be coated with a film of target material. The substantially non-collimating plate contains a plurality of apertures which intercept a percentage of the sputter particles while allowing other sputter particles to be deposited upon the substrate to form the film. The rate of deposition achieved by the aperture plate is less than the rate of sputtering so that the target may be sputtered at a sufficiently higher rate to reduce the formation of a reactant film on the sputter target while the deposition rate is sufficiently low to allow adequate reaction between a reactive gas and sputter particles to form the desired reactant film on the substrate. In accordance with another aspect of the invention, the apertures of the plate have different aspect ratios or different densities in various different regions of the plate to achieve various different deposition rates in different areas of the substrate. The aspect ratios of the apertures may be selectively varied to achieve a more uniform film thickness or a film of selectively varied thicknesses. The various aspect ratios are achieved by selectively varying a cross-sectional area and/or depth of the apertures in the plate.

摘要翻译： 本发明的孔板位于溅射靶和被覆材料的基片之间。 基本上非准直板包含多个孔，其拦截一定百分比的溅射颗粒，同时允许其它溅射颗粒沉积在基板上以形成膜。 通过孔板实现的沉积速度小于溅射速率，从而可以以足够高的速率溅射靶，以减少溅射靶上的反应物膜的形成，同时沉积速率足够低以允许足够的 反应气体和溅射颗粒之间的反应，以在衬底上形成所需的反应物膜。 根据本发明的另一方面，板的孔在板的各种不同区域具有不同的纵横比或不同的密度，以在基板的不同区域中实现各种不同的沉积速率。 可以选择性地改变孔的纵横比以实现更均匀的膜厚度或选择性变化的厚度的膜。 通过选择性地改变板中的孔的横截面面积和/或深度来实现各种纵横比。

公开(公告)号：US5130005A

公开(公告)日：1992-07-14

申请号：US626987

申请日：1990-12-13

申请人： Steven Hurwitt ,  Robert Hieronymi ,  Israel Wagner

发明人： Steven Hurwitt ,  Robert Hieronymi ,  Israel Wagner

IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/34

CPC分类号： H01J37/3497 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455 ,  H01J37/3458

摘要： A target of a thickness, which varies across its radius according to the amount of material required to be sputtered, is supported in a nest in a chamber of a sputter coating apparatus. Positioned behind the nest is a rotating magnet carrier having arranged thereon in a closed loop a permanent or electro magnetic strip, but preferably a flexible permanently magnetic material, with portions near the rim of the target and portions near, but not on, the target center about which the magnet rotates. The magnetic loop is transversely polarized with one pole toward the target rim and one toward the target center so that its field will enclose the rim of the target within a magnetic tunnel that traps a plasma over the target. Lumped magnets across the center from the strip support the plasma near the center so as to cause some sputtering at the target center. Other lumped magnets adjacent the strip help sharpen the field so that a desired distribution of sputtering can be achieved. Enclosed in a sealed space behind and in thermal contact with the target nest is the carrier from which the magnets project to facilitate the flow of cooling fluid across the back surface of the nest to cool the target as the carrier rotates.

摘要翻译： 根据溅射需要的材料的量，其半径上的厚度变化的靶被支撑在溅射涂覆装置的腔室中。 位于巢后面的是旋转磁体载体，其在闭合环中布置有永久或电磁条，但优选地是柔性永久磁性材料，其中靠近靶的边缘的部分和靠近但不在目标中心的部分 磁体绕其旋转。 磁环以一极朝向目标边缘横向极化，一个朝向目标中心，使其磁场将围绕目标的边缘封闭在通过目标的等离子体上的磁通道内。 从中心穿过中心的集中磁体支撑中心附近的等离子体，从而在目标中心处引起一些溅射。 与带相邻的其他集中磁体有助于锐化场，从而可以实现期望的溅射分布。 封闭在与目标巢后面并与之接触的密封空间中是磁体突出以承载冷却流体穿过巢背面的载体，以在载体旋转时冷却目标物。

公开(公告)号：US5409590A

公开(公告)日：1995-04-25

申请号：US816137

申请日：1991-12-31

申请人： Steven Hurwitt ,  Robert Hieronymi ,  Israel Wagner

发明人： Steven Hurwitt ,  Robert Hieronymi ,  Israel Wagner

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC分类号： H01J37/32935 ,  C23C14/04 ,  C23C14/046 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458 ,  H01J37/3497 ,  H01J2237/3327

摘要： A target of a thickness, which varies across its radius according to the amount of material required to be sputtered, is supported in a nest in a chamber of a sputter coating apparatus. Positioned behind the nest is a rotating magnet carrier having arranged thereon in a closed loop a permanant or electro magnetic strip, but preferably a flexible permanently magnetic material, with portions near the rim of the target and portions near, but not on, the target center about which the magnet rotates. The magnetic loop is transversely polarized with one pole toward the target rim and one toward the target center so that its field will enclose the rim of the target within a magnetic tunnel that traps a plasma over the target. Lumped magnets across the center from the strip support the plasma near the center so as to cause some sputtering at the target center. Other lumped magnets adjacent the strip help sharpen the field so that a desired distribution of sputtering can be achieved. Enclosed in a sealed space behind and in thermal contact with the target nest is the carrier from which the magnets project to facilitate the flow of cooling fluid across the back surface of the nest to cool the target as the carrier rotates.

摘要翻译： 根据溅射需要的材料的量，其半径上的厚度变化的靶被支撑在溅射涂覆装置的腔室中。 位于巢后面的是旋转磁体载体，其在密封环中布置有永久或电磁条，但优选地是柔性永久磁性材料，其具有靠近靶的边缘的部分和靠近但不在目标中心的部分 磁体绕其旋转。 磁环以一极朝向目标边缘横向极化，一个朝向目标中心，使其磁场将围绕目标的边缘封闭在通过目标的等离子体上的磁通道内。 从中心穿过中心的集中磁体支撑中心附近的等离子体，从而在目标中心处引起一些溅射。 与带相邻的其他集中磁体有助于锐化场，从而可以实现期望的溅射分布。 封闭在与目标巢后面并与之接触的密封空间是磁体突出的载体，以便于冷却流体跨过巢的后表面流动，以在载体旋转时冷却目标物。

公开(公告)号：US20070261015A1

公开(公告)日：2007-11-08

申请号：US11826281

申请日：2007-07-13

申请人： Arkadiy Morgenshtein ,  Alexander Fish ,  Israel Wagner

发明人： Arkadiy Morgenshtein ,  Alexander Fish ,  Israel Wagner

IPC分类号： G06F17/50

CPC分类号： G06F17/505 ,  H03K19/0948

摘要： A complementary logic circuit contains a first logic input, a second logic input, a first dedicated logic terminal, a second dedicated logic terminal, a first logic block, and a second logic block. The first logic block consists of a network of p-type transistors for implementing a predetermined logic function. The p-type transistor network has an outer diffusion connection, a first network gate connection, and an inner diffusion connection. The outer diffusion connection of the p-type transistor network is connected to the first dedicated logic terminal, and the first network gate connection of the p-type transistor network is connected to the first logic input. The second logic block consists of a network of n-type transistors which implements a logic function complementary to the logic function implemented by the first logic block. The n-type transistor network has an outer diffusion connection, a first network gate connection, and an inner diffusion connection. The outer diffusion connection of the n-type transistor network is connected to the second dedicated logic terminal, and the first network gate connection of the n-type transistor network is connected to the second logic input. The inner diffusion connections of the p-type network and of the n-type network are connected together to form a common diffusion logic terminal.

摘要翻译： 互补逻辑电路包括第一逻辑输入，第二逻辑输入，第一专用逻辑终端，第二专用逻辑终端，第一逻辑块和第二逻辑块。 第一逻辑块由用于实现预定逻辑功能的p型晶体管的网络组成。 p型晶体管网络具有外部扩散连接，第一网络栅极连接和内部扩散连接。 p型晶体管网络的外部扩散连接连接到第一专用逻辑端子，p型晶体管网络的第一网络连接连接到第一逻辑输入端。 第二逻辑块由n型晶体管的网络组成，其实现与由第一逻辑块实现的逻辑功能互补的逻辑功能。 n型晶体管网络具有外部扩散连接，第一网络栅极连接和内部扩散连接。 n型晶体管网络的外部扩散连接连接到第二专用逻辑端子，并且n型晶体管网络的第一网络栅极连接连接到第二逻辑输入端。 p型网络和n型网络的内部扩散连接被连接在一起形成一个共同的扩散逻辑终端。

公开(公告)号：US06566934B1

公开(公告)日：2003-05-20

申请号：US10029980

申请日：2001-12-31

申请人： David Goren ,  Israel Wagner ,  Eliyahu Shamsaev

发明人： David Goren ,  Israel Wagner ,  Eliyahu Shamsaev

IPC分类号： G06F764

CPC分类号： H03F3/45475 ,  H03F3/005 ,  H03F2203/45514

摘要： A switched capacitor circuit, including a load-capacitor, and a charging switch which is coupled to apply a potential to the load-capacitor. The circuit further includes a compensating-capacitor and switching circuitry which is coupled to the charging switch and the compensating-capacitor and which is switchable. The switching is arranged to transfer to the compensating-capacitor an injection error charge produced by the charging switch, and then to isolate the injection error charge on the compensating-capacitor from the load-capacitor.

摘要翻译： 一种开关电容器电路，包括负载电容器和充电开关，其被耦合以向负载电容器施加电位。 电路还包括补偿电容器和开关电路，其耦合到充电开关和补偿电容器，并且其是可切换的。 开关被布置成将补充电容器转移到由充电开关产生的注入错误电荷，然后将补偿电容器上的注入误差电荷与负载电容器隔离开来。

公开(公告)号：US08273221B2

公开(公告)日：2012-09-25

申请号：US11638176

申请日：2006-12-13

申请人： Stefan Schneider ,  Marcel Muller ,  Jiri Vyskocil ,  Israel Wagner

发明人： Stefan Schneider ,  Marcel Muller ,  Jiri Vyskocil ,  Israel Wagner

IPC分类号： C23C14/00

CPC分类号： H01J37/3408 ,  C23C14/35 ,  H01J37/3455 ,  H01J37/3458 ,  H01J37/347

摘要： An apparatus and method are provided for improved utilization of a sputter target in the longitudinal end regions. The focus of erosion in the end regions is widened, thereby extending the useful life of the target. This provides improved efficiency and reduces waste because a greater proportion of the target material in the more expansive central region can be harvested, because the target is utilized for a longer period of time.

摘要翻译： 提供了一种用于改善在纵向端部区域中的溅射靶的利用的装置和方法。 最终地区的侵蚀重点扩大，延长了目标的使用寿命。 这提高了效率并减少了浪费，因为目标材料在更广泛的中心区域中可以收获更多的目标材料，因为目标被使用了较长的时间。