公开(公告)号：US5625529A

公开(公告)日：1997-04-29

申请号：US412043

申请日：1995-03-28

Applicant: Wan-in Lee ,  Jun-ki Lee ,  Il-sub Chung ,  Chi-won Chung ,  In-kyung Yoo

Inventor： Wan-in Lee ,  Jun-ki Lee ,  Il-sub Chung ,  Chi-won Chung ,  In-kyung Yoo

IPC: C04B35/46 ,  H01B3/00 ,  H01B3/12 ,  H01G4/12 ,  H01G7/06 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01G4/06

CPC classification number: H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L28/55 ,  Y10T29/435

Abstract: PZT ferroelectric thin films for capacitors comprise a combination of a donor dopant and an acceptor dopant in a total amount of about 0.1 to 8 mole percent of PZT, or Sc alone in an amount of about 0.1 to 5 mole percent. Nb or Ta is employed as a donor dopant, while Sc, Mg or Zn can be used as an acceptor dopant. The presence of a single Sc acceptor dopant, or both an acceptor dopant and a donor dopant, results in increased endurance. Fatigue cycles are increased on the order of about 10.sup.5 relative to dopant-free films. Doping with a single Sc acceptor dopant, or both an acceptor dopant and a donor dopant, reduces coercive field, allowing PZT films to switch at relatively low voltages. PZT thin films of a pure perovskite phase are obtained in which a pyrochlore phase is completely excluded. Pt may be used as an electrode material. The leakage current of PZT films doped with both the acceptor and donor elements are similar to the leakage current level of pure PZT thin films.

Abstract translation: 用于电容器的PZT铁电薄膜包括总量为约0.1至8摩尔％的PZT或Sc单独的施主掺杂剂和受主掺杂剂的组合，其量为约0.1至5摩尔％。 Nb或Ta用作施主掺杂剂，而Sc，Mg或Zn可用作受主掺杂剂。 单个Sc受体掺杂剂或受体掺杂剂和施主掺杂剂两者的存在导致耐久性增加。 相对于不含掺杂剂的膜，疲劳循环增加约为约105。 用单个Sc受体掺杂剂或受体掺杂剂和施主掺杂剂掺杂减少矫顽场，允许PZT膜在相对低的电压下切换。 获得纯钙钛矿相的PZT薄膜，其中完全排除了烧绿石相。 Pt可以用作电极材料。 掺杂受体和施主元素的PZT膜的漏电流类似于纯PZT薄膜的漏电流水平。

公开(公告)号：US5637352A

公开(公告)日：1997-06-10

申请号：US539518

申请日：1995-10-05

Applicant: Wan-in Lee ,  Jun-ki Lee ,  Seshu B. Desu

Inventor： Wan-in Lee ,  Jun-ki Lee ,  Seshu B. Desu

IPC: C01G21/02 ,  C07F7/00 ,  C07F7/24 ,  C23C16/40 ,  C30B25/00 ,  C30B29/32 ,  H01B3/00 ,  H01G4/33 ,  H01L21/822 ,  H01L27/04 ,  H01L41/187

CPC classification number: C07F7/003 ,  C23C16/409

Abstract: An organometallic lead precursor, represented by following formula:L.sub.x.Pb(THD).sub.2 [I]wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R=H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.5 to 2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Pb at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point.Lead-titanium based thin films prepared from the precursor, display superior reproducibility and reliability.

Abstract translation: 由下式表示的有机金属铅前体：Lx.Pb（THD）2 [I]其中L是选自NR 3（R = H，CH 3）气体和Cl 2气体的电子供体配体; THD表示2,2'，6,6'-四甲基-3,5-庚二酮; 并且x在0.5至2的范围内，通过使气相电子给体在预定温度下流入含有双（2,2'，6,6'-四甲基-3,5-庚二酮）Pb的起泡器中来制备， 原位合成一种加合物。 该前体在挥发性方面表现出显着的改善，并且在蒸发点处具有稳定性。 由前体制备的铅钛基薄膜显示出优异的再现性和可靠性。

公开(公告)号：US5913117A

公开(公告)日：1999-06-15

申请号：US618370

申请日：1996-03-19

Applicant: Wan-in Lee

Inventor： Wan-in Lee

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108

CPC classification number: H01L28/56 ,  H01L21/02 ,  H01L28/60

Abstract: This invention is related to the manufacturing method of ferroelectric capacitor, which can be applied to the memory cell of FRAM (Ferroelectric Random Access Memory). Fabrication of ferroelectric capacitor comprising the steps of: coating a first PZT sol-gel solution on a RuO.sub.X electrode to form a first PZT layer; baking the first PZT layer; annealing the first PZT layer to produce a seed layer with a perovskite structure; coating a second PZT sol-gel solution on the seed layer to form a second PZT layer; baking the second PZT layer; and annealing the second PZT layer to form a PZT film with a perovskite structure. The ferroelectric capacitor not only has a lower leakage current level and a higher degree of remanent polarization than the conventional capacitor, but also has almost the same leakage current level as an existing Pt/PZT/Pt capacitor.

Abstract translation: 本发明涉及可应用于FRAM（铁电随机存取存储器）的存储单元的铁电电容器的制造方法。 铁电电容器的制造包括以下步骤：在RuOX电极上涂覆第一PZT溶胶 - 凝胶溶液以形成第一PZT层; 烘烤第一个PZT层; 退火第一PZT层以产生具有钙钛矿结构的种子层; 在种子层上涂覆第二PZT溶胶 - 凝胶溶液以形成第二PZT层; 烘烤第二PZT层; 并退火第二PZT层以形成具有钙钛矿结构的PZT膜。 铁电电容器不仅具有比常规电容器更低的漏电流水平和更高的剩余极化程度，而且与现有的Pt / PZT / Pt电容器具有几乎相同的漏电流水平。

公开(公告)号：US5688979A

公开(公告)日：1997-11-18

申请号：US726761

申请日：1996-10-10

Applicant: Wan-in Lee ,  Jun-ki Lee

Inventor： Wan-in Lee ,  Jun-ki Lee

IPC: H01G4/33 ,  C23C16/40 ,  H01B3/12 ,  C07F7/00 ,  C04B35/46

CPC classification number: C23C16/409

Abstract: An organometallic zirconium precursor, represented by following formula: L.sub.x .multidot.Zr(THD).sub.4 �I! wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R.dbd.H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.3 to 1.5 with the proviso that L is NR.sub.3 or in the range of 0.5 to 2 with the proviso that L is Cl.sub.2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Zr at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point. Lead-zirconium-titanium thin films prepared from the precursor, display superior reproducibility and reliability.

Abstract translation: 由下式表示的有机金属锆前体：LxxZr（THD）4 [I]其中L是选自NR3（R = H，CH3）和Cl2气体的电子供体配体; THD表示2,2'，6,6'-四甲基-3,5-庚二酮; 并且x为0.3至1.5的范围，条件是L为NR 3或0.5至2的范围，条件是L为Cl 2，通过使气相电子给体流入含有双（2， 2'，6,6'-四甲基-3,5-庚二酮）Zr在预定温度下，原位合成加合物。 该前体在挥发性方面表现出显着的改善，并且在蒸发点处具有稳定性。 由前体制备的铅锆钛薄膜显示出优异的重现性和可靠性。

公开(公告)号：US5688980A

公开(公告)日：1997-11-18

申请号：US729089

申请日：1996-10-10

Applicant: Wan-in Lee ,  Jun-ki Lee ,  Seshu B. Desu

Inventor： Wan-in Lee ,  Jun-ki Lee ,  Seshu B. Desu

IPC: C01G21/02 ,  C07F7/00 ,  C07F7/24 ,  C23C16/40 ,  C30B25/00 ,  C30B29/32 ,  H01B3/00 ,  H01G4/33 ,  H01L21/822 ,  H01L27/04 ,  H01L41/187 ,  C04B35/46

CPC classification number: C07F7/003 ,  C23C16/409

Abstract: An organometallic lead precursor, represented by following formula: L.sub.x .multidot.Pb(THD).sub.2 �I! wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R=H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.5 to 2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Pb at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility and in stability at the vaporization point. Lead-titanium based thin films prepared from the precursor, display superior reproducibility and reliability.

Abstract translation: 由下式表示的有机金属铅前体：LxxPb（THD）2 [I]其中L是选自NR3（R = H，CH3）和Cl2气体的电子供体配体; THD表示2,2'，6,6'-四甲基-3,5-庚二酮; 并且x在0.5至2的范围内，通过使气相电子给体在预定温度下流入含有双（2,2'，6,6'-四甲基-3,5-庚二酮）Pb的起泡器中来制备， 原位合成一种加合物。 该前体在蒸发点显示挥发性和稳定性方面的显着改善。 由前体制备的铅钛基薄膜显示出优异的再现性和可靠性。

公开(公告)号：US5641540A

公开(公告)日：1997-06-24

申请号：US415837

申请日：1995-04-03

Applicant: Wan-in Lee ,  Jun-ki Lee

Inventor： Wan-in Lee ,  Jun-ki Lee

IPC: H01G4/33 ,  C23C16/40 ,  H01B3/12

CPC classification number: C23C16/409

Abstract: An organometallic zirconium precursor, represented by following formula:L.sub.x.Zr(THD).sub.4 [I]wherein L is an electron donor ligand selected from the group consisting of NR.sub.3 (R.dbd.H, CH.sub.3) gas and Cl.sub.2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.3 to 1.5 with the proviso that L is NR.sub.3 or in the range of 0.5 to 2 with the proviso that L is Cl.sub.2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Zr at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point.Lead-zirconium-titanium thin films prepared from the precursor, display superior reproducibility and reliability.

Abstract translation: 由下式表示的有机金属锆前体：Lx.Zr（THD）4 [I]其中L是选自NR 3（R = H，CH 3）气体和Cl 2气体的电子供体配体; THD表示2,2'，6,6'-四甲基-3,5-庚二酮; 并且x为0.3至1.5的范围，条件是L为NR 3或0.5至2的范围，条件是L为Cl 2，通过使气相电子给体流入含有双（2， 2'，6,6'-四甲基-3,5-庚二酮）Zr在预定温度下，原位合成加合物。 该前体在挥发性方面表现出显着的改善，并且在蒸发点处具有稳定性。 由前体制备的铅锆钛薄膜显示出优异的再现性和可靠性。