摘要:
One or more rigid sealing segments are attached to pipe end sections and the assembly lined to form a fluid-resistant joint. A segment surface forms the primary sealing interface of lined pipe sections without the need for a conventional removable liner edge seal. The lining process and configuration sealably bonds the liner to the fluid-resistant sealing segment and to the non-fluid-resistant pipe. The manner of bonding both avoids (or limits) liner stress and covers the non-fluid-resistant material of the pipe. In an alternative embodiment, the sealing segments are engaged at mating threaded surfaces, the mated threads providing a single primary sealing and engagement interface. Redundant liner end sealing may also be accomplished by a sandwiched deformable material if added reliability of sealing harsh fluids is desired. In another embodiment, portions of the rigid sealing segments are slidably mounted relative to each other and the primary seal interface is temperature actuated.
摘要:
A process for making slurries is provided. The process comprises providing a liquid component and a solids component; introducing the liquid component into a mixing vessel having pitched blade turbines; adding at least 25% of the solids component into the mixing vessel; initiating an in-line rotor stator positioned to receive the mixture from the mixing vessel; and re-circulating the mixture from the mixing vessel through the in-line rotor stator and back to the mixing vessel.
摘要:
A semiconductor device having an elevated gate electrode and elevated active regions and a process for manufacturing such a device is disclosed. In accordance with one embodiment a semiconductor device is formed by forming a gate insulating layer over a substrate and forming a photoresist block over the gate insulating layer. First portions of the gate insulating layer and first portions of the substrate adjacent the photoresist block are then removed to form a first elevated substrate region under the gate insulating layer and photoresist block. Edge portions of the photoresist block are then removed. Second portions of the gate insulating layer and portions of the first elevated substrate region adjacent the photoresist block are then removed to form second elevated substrate regions adjacent the photoresist block, and a dopant is implanted into the second elevated substrate regions to form source/drain regions, and the photoresist block is used to form a gate electrode. In accordance with another embodiment a semiconductor device is formed substantially as above, but the dopant is implanted at an angle relative to the substrate surface.
摘要:
An improved oscillator test structure is disclosed. A structure according to one embodiment includes an odd plurality of first transistor pairs formed on a predetermined area of a semiconductor substrate. The transistor pairs are electrically connected in a serial ring. The structure also includes at least one second transistor pair, also formed within the predetermined area on the substrate, but electrically isolated from the odd plurality of first transistor pairs.
摘要:
A bag for breathing apparatus having an internal zigzag passageway between an inlet and an outlet, the bag being formed of flexible material presenting an interior surface of silicone rubber and an exterior surface of a fluoroelastomer based on a copolymer of vinylidene and hexafluoropropylene the means and method of manufacture involving a mounting plate which carries supporting panels for the end wall and partition wall components of the bag, the side walls and bottom wall components of the bag being held in contact with selected margins of the components supported on the panels by a foldable external retaining structure to permit heating of the bag components to a bonding temperature or to permit setting of appropriate adhesive.