Brittle lined pipe connector
    1.
    发明授权
    Brittle lined pipe connector 失效
    脆性内衬管接头

    公开(公告)号:US5236231A

    公开(公告)日:1993-08-17

    申请号:US713551

    申请日:1991-06-07

    摘要: One or more rigid sealing segments are attached to pipe end sections and the assembly lined to form a fluid-resistant joint. A segment surface forms the primary sealing interface of lined pipe sections without the need for a conventional removable liner edge seal. The lining process and configuration sealably bonds the liner to the fluid-resistant sealing segment and to the non-fluid-resistant pipe. The manner of bonding both avoids (or limits) liner stress and covers the non-fluid-resistant material of the pipe. In an alternative embodiment, the sealing segments are engaged at mating threaded surfaces, the mated threads providing a single primary sealing and engagement interface. Redundant liner end sealing may also be accomplished by a sandwiched deformable material if added reliability of sealing harsh fluids is desired. In another embodiment, portions of the rigid sealing segments are slidably mounted relative to each other and the primary seal interface is temperature actuated.

    摘要翻译: 一个或多个刚性密封段连接到管端部分,并且组合件衬里形成耐流体接合部。 分段表面形成衬里管段的主要密封界面,而不需要常规的可拆卸衬垫边缘密封。 衬里工艺和构造将衬套密封地结合到耐流体密封段和非耐流体管。 接合方式避免(或限制)衬套应力并覆盖管道的非流体阻力材料。 在替代实施例中,密封段在匹配的螺纹表面处接合,配合螺纹提供单个主要密封和接合界面。 冗余衬里端密封也可以通过夹层的可变形材料来实现,如果需要密封的苛刻流体的可靠性。 在另一个实施例中,刚性密封段的部分相对于彼此可滑动地安装,并且主密封接口被温度启动。

    Semiconductor device having elevated gate electrode and elevated active
regions and method of manufacture thereof
    4.
    发明授权
    Semiconductor device having elevated gate electrode and elevated active regions and method of manufacture thereof 失效
    具有升高的栅电极和升高的有源区的半导体器件及其制造方法

    公开(公告)号:US6110786A

    公开(公告)日:2000-08-29

    申请号:US61409

    申请日:1998-04-16

    摘要: A semiconductor device having an elevated gate electrode and elevated active regions and a process for manufacturing such a device is disclosed. In accordance with one embodiment a semiconductor device is formed by forming a gate insulating layer over a substrate and forming a photoresist block over the gate insulating layer. First portions of the gate insulating layer and first portions of the substrate adjacent the photoresist block are then removed to form a first elevated substrate region under the gate insulating layer and photoresist block. Edge portions of the photoresist block are then removed. Second portions of the gate insulating layer and portions of the first elevated substrate region adjacent the photoresist block are then removed to form second elevated substrate regions adjacent the photoresist block, and a dopant is implanted into the second elevated substrate regions to form source/drain regions, and the photoresist block is used to form a gate electrode. In accordance with another embodiment a semiconductor device is formed substantially as above, but the dopant is implanted at an angle relative to the substrate surface.

    摘要翻译: 公开了一种具有升高的栅电极和升高的有源区的半导体器件及其制造方法。 根据一个实施例,通过在衬底上形成栅极绝缘层并在栅极绝缘层上形成光致抗蚀剂阻挡层来形成半导体器件。 然后去除栅极绝缘层的第一部分和与光致抗蚀剂嵌段相邻的基板的第一部分,以在栅极绝缘层和光致抗蚀剂阻挡块下方形成第一升高的基板区域。 然后去除光致抗蚀剂块的边缘部分。 然后去除栅极绝缘层的第二部分和邻近光致抗蚀剂阻挡块的第一升高的衬底区域的部分,以形成与光致抗蚀剂阻挡层相邻的第二升高的衬底区域,并且将掺杂剂注入第二升高的衬底区域以形成源极/漏极区域 ,并且光致抗蚀剂块用于形成栅电极。 根据另一个实施例,基本上如上所述形成半导体器件,但掺杂剂以相对于衬底表面成一角度注入。

    Ring oscillator test structure
    5.
    发明授权
    Ring oscillator test structure 失效
    环形振荡器测试结构

    公开(公告)号:US6075417A

    公开(公告)日:2000-06-13

    申请号:US2655

    申请日:1998-01-05

    IPC分类号: G01R31/28 H03B5/24 G01R31/00

    CPC分类号: G01R31/2824

    摘要: An improved oscillator test structure is disclosed. A structure according to one embodiment includes an odd plurality of first transistor pairs formed on a predetermined area of a semiconductor substrate. The transistor pairs are electrically connected in a serial ring. The structure also includes at least one second transistor pair, also formed within the predetermined area on the substrate, but electrically isolated from the odd plurality of first transistor pairs.

    摘要翻译: 公开了一种改进的振荡器测试结构。 根据一个实施例的结构包括形成在半导体衬底的预定区域上的奇数个第一晶体管对。 晶体管对以串联环电连接。 该结构还包括至少一个第二晶体管对,其也形成在衬底上的预定区域内,但与奇数多个第一晶体管对电隔离。

    Means and method of manufacturing bags for breathing apparatus
    6.
    发明授权
    Means and method of manufacturing bags for breathing apparatus 失效
    制造呼吸器具袋的方法和方法

    公开(公告)号:US3984274A

    公开(公告)日:1976-10-05

    申请号:US539944

    申请日:1975-01-10

    申请人: John Bush

    发明人: John Bush

    摘要: A bag for breathing apparatus having an internal zigzag passageway between an inlet and an outlet, the bag being formed of flexible material presenting an interior surface of silicone rubber and an exterior surface of a fluoroelastomer based on a copolymer of vinylidene and hexafluoropropylene the means and method of manufacture involving a mounting plate which carries supporting panels for the end wall and partition wall components of the bag, the side walls and bottom wall components of the bag being held in contact with selected margins of the components supported on the panels by a foldable external retaining structure to permit heating of the bag components to a bonding temperature or to permit setting of appropriate adhesive.

    摘要翻译: 一种用于呼吸器的袋子,其具有在入口和出口之间的内部之字形通道,所述袋由柔性材料形成,所述弹性材料呈现出基于亚乙烯基和六氟丙烯的共聚物的硅橡胶的内表面和含氟弹性体的外表面,所述方法和方法 涉及安装板,该安装板承载用于端壁的支撑板和袋的分隔壁部件,袋的侧壁和底壁部件通过可折叠的外部保持与支撑在面板上的部件的选定边缘接触 保持结构以允许将袋部件加热至接合温度或允许设置适当的粘合剂。