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公开(公告)号：US20190155063A1
公开(公告)日：2019-05-23
申请号：US16237804
申请日：2019-01-02
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Chang-Beom Eom , Jaeseong Lee , Daesu Lee , Sang June Cho , Dong Liu
Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.
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公开(公告)号：US20210389183A1
公开(公告)日：2021-12-16
申请号：US17285644
申请日：2019-11-08
Applicant: Yale University , Wisconsin Alumni Research Foundation
Inventor： Qiushi Guo , Cheng Li , Fengnian Xia , Zhenqiang Ma , Dong Liu , Zhenyang Xia
IPC: G01J3/51 , G01J5/02 , H01L27/146 , G01N21/35 , G01J5/20
Abstract: In one aspect, the invention provides a nanobolometer cell including a base layer, a dielectric spacer layer above and adjacent to the base layer, an ultrathin silicon film above and adjacent to the spacer layer, and at least one plasmonic optical antenna resonator above and adjacent to the silicon film.
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公开(公告)号：US10216013B2
公开(公告)日：2019-02-26
申请号：US15451745
申请日：2017-03-07
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Chang-Beom Eom , Jaeseong Lee , Daesu Lee , Sang June Cho , Dong Liu
Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.
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Patent Agency Ranking
公开(公告)号：US10649240B2
公开(公告)日：2020-05-12
申请号：US16237804
申请日：2019-01-02
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Chang-Beom Eom , Jaeseong Lee , Daesu Lee , Sang June Cho , Dong Liu
Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.
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公开(公告)号：US10347790B2
公开(公告)日：2019-07-09
申请号：US15928774
申请日：2018-03-22
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Dong Liu
Abstract: Light-emitting devices having a multiple quantum well (MQW) pin diode structure are provided. The light-emitting devices include a multilayered p-type contact composed of a heavily p-type doped hole injection layer and a thin p-type group III-nitride layer. The materials of the hole injection layer and the p-type group III-nitride layer are separated by a layer of a material that allows current tunneling through the heterogeneous junction formed between the lattice mismatched materials.
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6.发明授权公开(公告)号：US10297714B1
公开(公告)日：2019-05-21
申请号：US15945947
申请日：2018-04-05
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Dong Liu
IPC: H01L29/06 , H01L33/06 , H01L33/26 , H01L33/00 , H01L33/16 , H01L33/22 , H01L33/14 , H01L33/44 , H01L33/40
Abstract: Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The light-emitting devices include: a tunneling heterojunction as a hole injector; an n-type contact; and a light-emitting active region disposed between the tunneling heterojunction and the n-type contact. The tunneling heterojunction facilitates interband tunneling hole injection under bias, whereby electrons in the valence band of a p-type group III-nitride semiconductor tunnel directly into the conduction band of the n-type doped semiconductor, resulting in the generation of holes in the p-type group III-nitride.
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公开(公告)号：US20180277715A1
公开(公告)日：2018-09-27
申请号：US15928774
申请日：2018-03-22
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Dong Liu
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/32 , H01L33/34
Abstract: Light-emitting devices having a multiple quantum well (MQW) pin diode structure are provided. The light-emitting devices include a multilayered p-type contact composed of a heavily p-type doped hole injection layer and a thin p-type group III-nitride layer. The materials of the hole injection layer and the p-type group III-nitride layer are separated by a layer of a material that allows current tunneling through the heterogeneous junction formed between the lattice mismatched materials.
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公开(公告)号：US20180259796A1
公开(公告)日：2018-09-13
申请号：US15451745
申请日：2017-03-07
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Chang-Beom Eom , Jaeseong Lee , Daesu Lee , Sang June Cho , Dong Liu
CPC classification number: G02F1/0054 , G02F1/0147 , G02F1/313 , G02F2202/105 , H01P3/003
Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.
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