公开(公告)号：US07879525B2

公开(公告)日：2011-02-01

申请号：US10547830

申请日：2004-12-03

申请人： Yasushi Washio ,  Koji Saito

发明人： Yasushi Washio ,  Koji Saito

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/42

CPC分类号： G03F7/0382 ,  G03F7/0392 ,  Y10S430/114 ,  Y10S430/128

摘要： There are provided a stable chemically amplified photoresist composition that undergoes no change in alkali solubility prior to irradiation, a photoresist laminated product produced by laminating the photoresist composition onto a support, and a manufacturing method for a photoresist pattern and a manufacturing method for a connection terminal that use the photoresist composition and the laminated product. A chemically amplified photoresist composition is provided comprising (a) a resin that undergoes a change in alkali solubility under the action of acid, (b) a compound that generates acid on irradiation, and (c) a corrosion inhibitor.

摘要翻译： 提供了稳定的化学放大光致抗蚀剂组合物，其在照射之前不会发生碱溶解度的变化，通过将光致抗蚀剂组合物层压到载体上而制备的光致抗蚀剂层压产品，以及用于光致抗蚀剂图案的制造方法和连接端子的制造方法 使用光致抗蚀剂组合物和层压产品。 提供化学放大光致抗蚀剂组合物，其包含（a）在酸的作用下碱溶性变化的树脂，（b）在照射时产生酸的化合物，和（c）腐蚀抑制剂。

公开(公告)号：US07598014B2

公开(公告)日：2009-10-06

申请号：US10578398

申请日：2004-11-18

申请人： Yasushi Washio ,  Koji Saito

发明人： Yasushi Washio ,  Koji Saito

IPC分类号： G03F7/00 ,  G03F7/004

CPC分类号： G03F7/033 ,  G03F7/405 ,  Y10S430/106 ,  Y10S430/114

摘要： A negative thick film photoresist composition with improved alkali developability is provided. The composition comprises: (A) a resin component containing (a) from 61 to 90% by weight of a structural unit derived from a cyclic alkyl (meth)acrylate ester, and (b) a structural unit derived from a radical polymerizable compound containing a hydroxyl group, (B) a polymerizable compound containing at least one ethylenic unsaturated double bond, (C) a photopolymerization initiator, and (D) an organic solvent.

摘要翻译： 提供了具有改善的碱显影性的负厚膜光致抗蚀剂组合物。 该组合物包含：（A）含有（a）61〜90重量％的衍生自（甲基）丙烯酸环状烷基酯的结构单元的树脂成分，（b）衍生自含有 羟基，（B）含有至少一个烯属不饱和双键的聚合性化合物，（C）光聚合引发剂，（D）有机溶剂。

公开(公告)号：US07335465B2

公开(公告)日：2008-02-26

申请号：US10560155

申请日：2004-06-10

申请人： Yasushi Washio ,  Koji Saito

发明人： Yasushi Washio ,  Koji Saito

IPC分类号： G03F7/30 ,  G03G7/32

CPC分类号： G03F7/322

摘要： To provide a developer composition for resists, capable of improving dimensional controllability of a resist pattern. The developer composition for resists comprises an organic quaternary ammonium base as a main component, said developer composition further comprising an anionic surfactant represented by the following general formula (I), and SO42−, the content of S42− being from 0.01 to 1% by mass. In the formula, at least one of R1 and R2 represents an alkyl or alkoxy group having 5 to 18 carbon atoms and the other one represents a hydrogen atom, or an alkyl or alkoxy group having 5 to 18 carbon atoms, and at least one of R3, R4 and R5 represents an ammonium sulfonate group or a sulfonic acid-substituted ammonium group and the others represent a hydrogen atom, an ammonium sulfonate group or a sulfonic acid-substituted ammonium group.

摘要翻译： 提供能够提高抗蚀剂图案的尺寸可控性的抗蚀剂用显影剂组合物。 用于抗蚀剂的显影剂组合物包含有机季铵碱作为主要成分，所述显影剂组合物还包含由以下通式（I）表示的阴离子表面活性剂和SO 4 - / SUP>，其中S 2 的含量为0.01〜1质量％。 在该式中，R 1和R 2中的至少一个表示具有5至18个碳原子的烷基或烷氧基，另一个表示氢原子，或 具有5至18个碳原子的烷基或烷氧基，并且R 3，R 4和R 5中的至少一个表示磺酸铵基团 或磺酸取代的铵基，其余的表示氢原子，磺酸铵基或磺酸取代的铵基。

公开(公告)号：US07846640B2

公开(公告)日：2010-12-07

申请号：US10561802

申请日：2004-06-22

申请人： Yasushi Washio ,  Koji Saito

发明人： Yasushi Washio ,  Koji Saito

IPC分类号： G03C5/00

CPC分类号： G03F7/322

摘要： A developer composition for resists which has a high dissolution rate (high developing sensitivity). The developer composition for resists comprises an organic quaternary ammonium base as a main component and a surfactant containing an anionic surfactant represented by formula (I).

摘要翻译： 具有高溶解速率（高显影灵敏度）的抗蚀剂用显影剂组合物。 抗蚀剂用显影剂组合物包含作为主要成分的有机季铵碱和含有由式（I）表示的阴离子表面活性剂的表面活性剂。

公开(公告)号：US20100047715A1

公开(公告)日：2010-02-25

申请号：US12515872

申请日：2007-10-18

申请人： Yasushi Washio ,  Mitsuaki Ohgake ,  Nobuko Ohgake ,  Kazuhide Uno ,  Koichi Misumi ,  Takahiro Senzaki ,  Koji Saito

发明人： Yasushi Washio ,  Mitsuaki Ohgake ,  Nobuko Ohgake ,  Kazuhide Uno ,  Koichi Misumi ,  Takahiro Senzaki ,  Koji Saito

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  H01L21/0271

摘要： Disclosed are a chemically amplified positive-type photoresist composition for a thick film, a chemically amplified dry film for a thick film, and a method for producing a thick film resist pattern, all of which are capable of obtaining a satisfactory resist pattern with high sensitivity even on a substrate having a portion formed of copper on an upper surface thereof. The chemically amplified positive-type photoresist composition for a thick film comprises component (A) which includes at least one compound capable of producing an acid upon irradiation with an actinic ray or radiation, and component (B) which includes at least one resin whose alkali solubility increases by the action of an acid, in which the component (A) includes an onium fluorinated alkyl fluorophosphate having a specific structure.

摘要翻译： 公开了一种用于厚膜的化学放大正型光致抗蚀剂组合物，用于厚膜的化学放大干膜，以及制造厚膜抗蚀剂图案的方法，所有这些都能够以高灵敏度获得令人满意的抗蚀剂图案 即使在其上表面上具有由铜形成的部分的基板上。 用于厚膜的化学放大正型光致抗蚀剂组合物包含组分（A），其包含至少一种能够在用光化学射线或辐射照射时能够产生酸的化合物，和组分（B），其包含至少一种其碱 通过酸的作用，溶解度增加，其中组分（A）包括具有特定结构的鎓氟化烷基氟磷酸酯。

公开(公告)号：US20070275320A1

公开(公告)日：2007-11-29

申请号：US10547830

申请日：2004-12-03

申请人： Yasushi Washio ,  Koji Saito

发明人： Yasushi Washio ,  Koji Saito

IPC分类号： G03F1/00

CPC分类号： G03F7/0382 ,  G03F7/0392 ,  Y10S430/114 ,  Y10S430/128

摘要： There are provided a stable chemically amplified photoresist composition that undergoes no change in alkali solubility prior to irradiation, a photoresist laminated product produced by laminating the photoresist composition onto a support, and a manufacturing method for a photoresist pattern and a manufacturing method for a connection terminal that use the photoresist composition and the laminated product. A chemically amplified photoresist composition is provided comprising (a) a resin that undergoes a change in alkali solubility under the action of acid, (b) a compound that generates acid on irradiation, and (c) a corrosion inhibitor.

摘要翻译： 提供了稳定的化学放大光致抗蚀剂组合物，其在照射之前不会发生碱溶解度的变化，通过将光致抗蚀剂组合物层压到载体上而制备的光致抗蚀剂层压产品，以及用于光致抗蚀剂图案的制造方法和连接端子的制造方法 使用光致抗蚀剂组合物和层压产品。 提供化学放大光致抗蚀剂组合物，其包含（a）在酸的作用下碱溶性变化的树脂，（b）在照射时产生酸的化合物，和（c）腐蚀抑制剂。

公开(公告)号：US08507180B2

公开(公告)日：2013-08-13

申请号：US12515872

申请日：2007-10-18

申请人： Yasushi Washio ,  Kazuhide Uno ,  Koichi Misumi ,  Takahiro Senzaki ,  Koji Saito ,  Nobuko Ohgake

发明人： Yasushi Washio ,  Mitsuaki Ohgake ,  Kazuhide Uno ,  Koichi Misumi ,  Takahiro Senzaki ,  Koji Saito

IPC分类号： G03F7/039

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  H01L21/0271

摘要： Disclosed are a chemically amplified positive-type photoresist composition for a thick film, a chemically amplified dry film for a thick film, and a method for producing a thick film resist pattern, all of which are capable of obtaining a satisfactory resist pattern with high sensitivity even on a substrate having a portion formed of copper on an upper surface thereof. The chemically amplified positive-type photoresist composition for a thick film comprises component (A) which includes at least one compound capable of producing an acid upon irradiation with an actinic ray or radiation, and component (B) which includes at least one resin whose alkali solubility increases by the action of an acid, in which the component (A) includes an onium fluorinated alkyl fluorophosphate having a specific structure.

摘要翻译： 公开了一种用于厚膜的化学放大正型光致抗蚀剂组合物，用于厚膜的化学放大干膜，以及制造厚膜抗蚀剂图案的方法，所有这些都能够以高灵敏度获得令人满意的抗蚀剂图案 即使在其上表面上具有由铜形成的部分的基板上。 用于厚膜的化学放大正型光致抗蚀剂组合物包含组分（A），其包含至少一种能够在用光化学射线或辐射照射时能够产生酸的化合物，和组分（B），其包含至少一种其碱 通过酸的作用，溶解度增加，其中组分（A）包括具有特定结构的鎓氟化烷基氟磷酸酯。

公开(公告)号：US20080032242A1

公开(公告)日：2008-02-07

申请号：US11629017

申请日：2005-05-10

申请人： Yasuo Masuda ,  Yasushi Washio ,  Koji Saito

发明人： Yasuo Masuda ,  Yasushi Washio ,  Koji Saito

IPC分类号： G03F7/095 ,  G03F7/00

CPC分类号： G03F7/0035 ,  G03F7/0382 ,  G03F7/095 ,  H05K3/243 ,  H05K2203/0577 ,  H05K2203/1105 ,  H05K2203/1476

摘要： A method is provided that enables the formation of multiple level plated products with large plating depth. A negative photoresist composition comprising (a) an alkali-soluble resin, (b) an acid generator, and (c) other components is used, and a plated product is formed by (A) a step of forming a layer of this negative photoresist composition, and then either heating or not heating, before conducting exposure; (B) a step of repeating the step (A) so that the step is performed a total of 2 or more times, thereby superimposing layers of the negative photoresist, and subsequently developing all of these layers simultaneously to form a multilayer resist pattern; and (C) a step of conducting plating treatment within this multilayer resist pattern.

摘要翻译： 提供了能够形成具有大电镀深度的多层镀层产品的方法。 使用包含（a）碱溶性树脂，（b）酸产生剂和（c）其它组分）的负性光致抗蚀剂组合物，并且通过（A）形成该负性光致抗蚀剂层的步骤形成镀覆产物 组成，然后加热或不加热，然后进行曝光; （B）重复步骤（A）的步骤，使步骤总共进行2次以上，由此叠加负性光致抗蚀剂层，随后同时显影所有这些层以形成多层抗蚀剂图案; 和（C）在该多层抗蚀剂图案内进行电镀处理的工序。

公开(公告)号：US20060127825A1

公开(公告)日：2006-06-15

申请号：US10560155

申请日：2004-06-10

申请人： Yasushi Washio ,  Koji Saito

发明人： Yasushi Washio ,  Koji Saito

IPC分类号： G03C5/26

CPC分类号： G03F7/322

摘要： To provide a developer composition for resists, capable of improving dimensional controllability of a resist pattern. The developer composition for resists comprises an organic quaternary ammonium base as a main component, said developer composition further comprising an anionic surfactant represented by the following general formula (I), and SO42−, the content of S42− being from 0.01 to 1% by mass. In the formula, at least one of R1 and R2 represents an alkyl or alkoxy group having 5 to 18 carbon atoms and the other one represents a hydrogen atom, or an alkyl or alkoxy group having 5 to 18 carbon atoms, and at least one of R3, R4 and R5 represents an ammonium sulfonate group or a sulfonic acid-substituted ammonium group and the others represent a hydrogen atom, an ammonium sulfonate group or a sulfonic acid-substituted ammonium group.

摘要翻译： 提供能够提高抗蚀剂图案的尺寸可控性的抗蚀剂用显影剂组合物。 用于抗蚀剂的显影剂组合物包含有机季铵碱作为主要成分，所述显影剂组合物还包含由以下通式（I）表示的阴离子表面活性剂和SO 4 - / SUP>，其中S 2 的含量为0.01〜1质量％。 在该式中，R 1和R 2中的至少一个表示具有5至18个碳原子的烷基或烷氧基，另一个表示氢原子，或 具有5至18个碳原子的烷基或烷氧基，并且R 3，R 4和R 5中的至少一个表示磺酸铵基团 或磺酸取代的铵基，其余的表示氢原子，磺酸铵基或磺酸取代的铵基。

公开(公告)号：US06838229B2

公开(公告)日：2005-01-04

申请号：US10194298

申请日：2002-07-15

申请人： Yasushi Washio ,  Koji Saito ,  Toshiki Okui ,  Hiroshi Komano

发明人： Yasushi Washio ,  Koji Saito ,  Toshiki Okui ,  Hiroshi Komano

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/38

CPC分类号： G03F7/0045 ,  G03F7/0382 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/128

摘要： A chemically amplified negative photoresist composition is used for the formation of thick films having a thickness of 20 to 150 μm and includes (A) an alkali-soluble resin, (B) a compound which generates an acid upon irradiation with active light or radiant ray, and (C) a compound which serves as a crosslinking agent in the presence of an acid. The alkali-soluble resin (A) includes (a1) a novolak resin having a weight average molecular weight of from 5000 to 10000, and (a2) a polymer containing at least a hydroxystyrene constitutional unit and having a weight average molecular weight of less than or equal to 5000.

摘要翻译： 化学放大型负性光致抗蚀剂组合物用于形成厚度为20至150μm的厚膜，并且包括（A）碱溶性树脂，（B）在用活性光或辐射线照射时产生酸的化合物 ，和（C）在酸存在下用作交联剂的化合物。 碱溶性树脂（A）包括（a1）重均分子量为5000〜10000的酚醛清漆树脂，（a2）至少含有羟基苯乙烯结构单元且重均分子量小于 或等于5000。