公开(公告)号：US07355246B2

公开(公告)日：2008-04-08

申请号：US11268430

申请日：2005-11-07

申请人： Ali Keshavarzi ,  Stephen H. Tang ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien L. Lu ,  Vivek K. De

发明人： Ali Keshavarzi ,  Stephen H. Tang ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien L. Lu ,  Vivek K. De

IPC分类号： H01L29/76

CPC分类号： G11C11/404 ,  G11C2211/4016 ,  H01L27/0207 ,  H01L27/0214 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/108

摘要： Some embodiments provide a memory cell comprising a body region doped with charge carriers of a first type, a source region disposed in the body region and doped with charge carriers of a second type, and a drain region disposed in the body region and doped with charge carriers of the second type. According to some embodiments, the body region, the source region, and the drain region are oriented in a first direction, the body region and the source region form a first junction, and the body region and the drain region form a second junction. Moreover, a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased. Some embodiments further include a transistor oriented in a second direction, wherein the second direction is not parallel to the first direction.

摘要翻译： 一些实施例提供一种存储单元，其包括掺杂有第一类型的电荷载体的体区，设置在体区中的源极区，并掺杂有第二类型的电荷载流子，以及设置在体区中的掺杂电荷 第二种载体。 根据一些实施例，身体区域，源区域和漏极区域在第一方向上定向，身体区域和源区域形成第一结，并且体区域和漏区域形成第二结。 此外，在第一结无偏置的情况下，从体区到源极区的第一结的导电率基本上小于从体区到漏区的第二结的导电率，在第二结 是不偏不倚的 一些实施例还包括在第二方向上取向的晶体管，其中第二方向不平行于第一方向。

公开(公告)号：US07321502B2

公开(公告)日：2008-01-22

申请号：US10956285

申请日：2004-09-30

申请人： Fabrice Paillet ,  Ali Keshavarzi ,  Muhammad M. Khellah ,  Dinesh Somasekhar ,  Yibin Ye ,  Stephen H. Tang ,  Alavi Mohsen ,  Vivek K. De

发明人： Fabrice Paillet ,  Ali Keshavarzi ,  Muhammad M. Khellah ,  Dinesh Somasekhar ,  Yibin Ye ,  Stephen H. Tang ,  Alavi Mohsen ,  Vivek K. De

IPC分类号： G11C17/00

CPC分类号： G11C17/16 ,  G11C17/18

摘要： A method is described that induced dielectric breakdown within a capacitor's dielectric material while driving a current through the capacitor. The current is specific to data that is being written into the capacitor. The method also involves reading the data by interpreting behavior of the capacitor that is determined by the capacitor's resistance, where, the capacitor's resistance is a consequence of the inducing and the driving.

摘要翻译： 描述了一种在驱动电流通过电容器的同时在电容器的电介质材料内感应电介质击穿的方法。 电流特定于正在写入电容器的数据。 该方法还涉及通过解释由电容器电阻确定的电容器的行为来读取数据，其中电容器的电阻是诱导和驱动的结果。

公开(公告)号：US06992339B2

公开(公告)日：2006-01-31

申请号：US10750572

申请日：2003-12-31

申请人： Ali Keshavarzi ,  Stephen H. Tang ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien L. Lu ,  Vivek K. De

发明人： Ali Keshavarzi ,  Stephen H. Tang ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien L. Lu ,  Vivek K. De

IPC分类号： H01L27/10

CPC分类号： G11C11/404 ,  G11C2211/4016 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/108 ,  H01L29/7841

摘要： Some embodiments provide a memory cell that includes a body region, a source region and a drain region. The body region is doped with charge carriers of a first type, the source region is disposed in the body region and doped with charge carriers of a second type, and the drain region is disposed in the body region and doped with charge carriers of the second type. The body region and the source region form a first junction, the body region and the drain region form a second junction, and a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased.

公开(公告)号：US06906973B1

公开(公告)日：2005-06-14

申请号：US10746148

申请日：2003-12-24

申请人： Dinesh Somasekhar ,  Yibin Ye ,  Muhammad M. Khellah ,  Fabrice Paillet ,  Stephen H. Tang ,  Ali Keshavarzi ,  Shih-Lien L. Lu ,  Vivek K. De

发明人： Dinesh Somasekhar ,  Yibin Ye ,  Muhammad M. Khellah ,  Fabrice Paillet ,  Stephen H. Tang ,  Ali Keshavarzi ,  Shih-Lien L. Lu ,  Vivek K. De

IPC分类号： G11C7/00 ,  G11C7/12

CPC分类号： G11C7/12

摘要： Some embodiments provide pre-charge of a bit-line coupled to a memory cell to a reference voltage using a pre-charge device, discharge of the bit-line based on a value stored by the memory cell, injection during the discharge, of a first current into the bit-line using the pre-charge device, and injection, during the discharge, of a second current into a reference bit-line using a second pre-charge device. Also during the discharge, a difference is sensed between a voltage on the bit-line and a voltage on the reference bit-line.

摘要翻译： 一些实施例使用预充电器件将耦合到存储器单元的位线预充电至参考电压，基于存储器单元存储的值，放电期间的注入，放电期间的位线放电， 使用预充电器件进入位线的第一电流，以及在放电期间使用第二预充电器件将第二电流注入参考位线。 此外，在放电期间，在位线上的电压和参考位线上的电压之间感测到差异。

公开(公告)号：US07280425B2

公开(公告)日：2007-10-09

申请号：US11239903

申请日：2005-09-30

申请人： Ali Keshavarzi ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Dinesh Somasekhar ,  Yibin Ye ,  Stephen H. Tang ,  Mohsen Alavi ,  Vivek K. De

发明人： Ali Keshavarzi ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Dinesh Somasekhar ,  Yibin Ye ,  Stephen H. Tang ,  Mohsen Alavi ,  Vivek K. De

IPC分类号： G11C17/18

CPC分类号： G11C17/16 ,  G11C17/146 ,  G11C17/165 ,  G11C29/027

摘要： A one-time programmable (OTP) cell includes an access transistor coupled to an antifuse transistor. Access transistor has a gate oxide thickness that is greater than the gate oxide thickness of the antifuse transistor so that if the antifuse transistor is programmed, the voltage felt across the gate/drain junction of the access transistor is insufficient to cause the gate oxide of the access transistor to break down. The dual gate oxide OTP cell may be used in an array in which only one OTP cell is programmed at a time. The dual gate oxide OTP cell also may be used in an array in which several OTP cells are programmed simultaneously.

摘要翻译： 一次性可编程（OTP）单元包括耦合到反熔丝晶体管的存取晶体管。 存取晶体管具有大于反熔丝晶体管的栅极氧化物厚度的栅极氧化物厚度，使得如果对反熔丝晶体管进行编程，则在存取晶体管的栅极/漏极结附近的电压不足以引起栅极氧化物 存取晶体管分解。 双栅氧化物OTP单元可以用于其中一次只编写一个OTP单元的阵列中。 双栅氧化物OTP电池也可用于其中同时编程几个OTP电池的阵列中。

公开(公告)号：US07230846B2

公开(公告)日：2007-06-12

申请号：US11151982

申请日：2005-06-14

申请人： Ali Keshavarzi ,  Stephen H Tang ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M Khellah ,  Yibin Ye ,  Vivek K De ,  Gerhard Schrom

发明人： Ali Keshavarzi ,  Stephen H Tang ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M Khellah ,  Yibin Ye ,  Vivek K De ,  Gerhard Schrom

IPC分类号： G11C11/34

CPC分类号： G11C11/404 ,  G11C2211/4016

摘要： In general, in one aspect, the disclosure describes a memory array including a plurality of memory cells arranged in rows and columns. Each memory cell includes a transistor having a floating body capable of storing a charge. A plurality of word lines and purge lines are interconnected to rows of memory cells. A plurality of bit lines are interconnected to columns of memory cells. Driving signals provided via the word lines, the purge lines, and the bit lines can cooperate to alter the charge of the floating body region in one or more of the memory cells.

摘要翻译： 通常，在一个方面，本公开描述了包括以行和列布置的多个存储单元的存储器阵列。 每个存储单元包括具有能够存储电荷的浮动体的晶体管。 多个字线和清除线与存储器单元的行互连。 多个位线被连接到存储器单元的列。 通过字线提供的驱动信号，清除线和位线可以协作以改变一个或多个存储器单元中的浮体区域的电荷。

公开(公告)号：US07102951B2

公开(公告)日：2006-09-05

申请号：US10979605

申请日：2004-11-01

申请人： Fabrice Paillet ,  Ali Keshavarzi ,  Muhammad M. Khellah ,  Dinesh Somasekhar ,  Yibin Ye ,  Stephen H. Tang ,  Mohsen Alavi ,  Vivek K. De

发明人： Fabrice Paillet ,  Ali Keshavarzi ,  Muhammad M. Khellah ,  Dinesh Somasekhar ,  Yibin Ye ,  Stephen H. Tang ,  Mohsen Alavi ,  Vivek K. De

IPC分类号： G11C17/18

CPC分类号： G11C17/146 ,  G11C17/16 ,  G11C17/18 ,  G11C29/027

摘要： Different embodiments of a one-time-programmable antifuse cell included. In one embodiment, a circuit is provided that includes an antifuse element, a high voltage device, and a sense circuit. The antifuse element has a voltage supply terminal to be at a sense voltage during sensing/reading and a higher programming voltage during programming. The sense circuit is configured to enable programming the antifuse element during programming and to sense the state of the antifuse element during sensing. The high voltage device is coupled between the antifuse element and the sense circuit to couple the antifuse element to the sense circuit during programming and sensing and to protectively shield the sense circuit from the higher programming voltage during programming.

摘要翻译： 包括一次性可编程反熔丝电池的不同实施例。 在一个实施例中，提供了包括反熔丝元件，高压器件和感测电路的电路。 反熔丝元件在编程期间具有在感测/读取期间处于感测电压的电压提供端子和更高的编程电压。 感测电路被配置为能够在编程期间对反熔丝元件进行编程，并且在感测期间感测反熔丝元件的状态。 高电压设备耦合在反熔丝元件和感测电路之间，以在编程和感测期间将反熔断元件耦合到感测电路，并且在编程期间将感测电路与更高的编程电压保护性地屏蔽。

公开(公告)号：US07102358B2

公开(公告)日：2006-09-05

申请号：US10880337

申请日：2004-06-29

申请人： Ali Keshavarzi ,  Fabrice Paillet ,  Muhammad M Khellah ,  Dinesh Somasekhar ,  Yibin Ye ,  Stephen H Tang ,  Mohsen Alavi ,  Vivek K De

发明人： Ali Keshavarzi ,  Fabrice Paillet ,  Muhammad M Khellah ,  Dinesh Somasekhar ,  Yibin Ye ,  Stephen H Tang ,  Mohsen Alavi ,  Vivek K De

IPC分类号： G01R31/26

CPC分类号： G01R31/2621 ,  G01R19/16571

摘要： A transistor may have degraded characteristics because of an overvoltage condition. The degraded characteristics may be sensed to determine that the transistor has previously been subjected to an overvoltage condition.

摘要翻译： 由于过电压状态，晶体管可能具有劣化特性。 可以感测劣化特性以确定晶体管先前已经经受过压状态。

公开(公告)号：US07072205B2

公开(公告)日：2006-07-04

申请号：US10716755

申请日：2003-11-19

申请人： Stephen H. Tang ,  Ali Keshavarzi ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien L. Lu ,  Vivek K. De

发明人： Stephen H. Tang ,  Ali Keshavarzi ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien L. Lu ,  Vivek K. De

IPC分类号： G11C11/24 ,  G11C11/34

CPC分类号： G11C11/4094 ,  G11C11/404 ,  G11C11/4076 ,  G11C11/4085

摘要： A row of floating-body single transistor memory cells is written to in two phases.

摘要翻译： 一行浮体单晶体管存储单元分两个阶段写入。

公开(公告)号：US07002842B2

公开(公告)日：2006-02-21

申请号：US10721184

申请日：2003-11-26

申请人： Stephen H. Tang ,  Ali Keshavarzi ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien Lu ,  Vivek K. De

发明人： Stephen H. Tang ,  Ali Keshavarzi ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien Lu ,  Vivek K. De

IPC分类号： G11C11/34

CPC分类号： H01L27/108 ,  G11C11/404

摘要： Embodiments relate to a Floating Body Dynamic Random Access Memory (FBDRAM). The FBDRAM utilizes a purge line to reset a FBDRAM cell, prior to writing data to the FBDRAM cell.