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公开(公告)号：US07002842B2
公开(公告)日：2006-02-21
申请号：US10721184
申请日：2003-11-26
申请人： Stephen H. Tang , Ali Keshavarzi , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien Lu , Vivek K. De
发明人： Stephen H. Tang , Ali Keshavarzi , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien Lu , Vivek K. De
IPC分类号： G11C11/34
CPC分类号： H01L27/108 , G11C11/404
摘要： Embodiments relate to a Floating Body Dynamic Random Access Memory (FBDRAM). The FBDRAM utilizes a purge line to reset a FBDRAM cell, prior to writing data to the FBDRAM cell.
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公开(公告)号：US07057927B2
公开(公告)日：2006-06-06
申请号：US11289621
申请日：2005-11-30
申请人： Stephen H. Tang , Ali Keshavarzi , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien Lu , Vivek K. De
发明人： Stephen H. Tang , Ali Keshavarzi , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien Lu , Vivek K. De
IPC分类号： G11C11/34
CPC分类号： H01L27/108 , G11C11/404
摘要： Embodiments relate to a Floating Body Dynamic Random Access Memory (FBDRAM). The FBDRAM utilizes a purge line to reset a FBDRAM cell, prior to writing data to the FBDRAM cell.
摘要翻译： 实施例涉及浮体动态随机存取存储器（FBDRAM）。 在将数据写入FBDRAM单元之前，FBDRAM利用清除线来复位FBDRAM单元。
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公开(公告)号：US06952376B2
公开(公告)日：2005-10-04
申请号：US10740551
申请日：2003-12-22
申请人： Dinesh Somasekhar , Yibin Ye , Muhammad M. Khellah , Fabrice Paillet , Stephen H. Tang , Ali Keshavarzi , Shih-Lien Lu , Vivek K. De
发明人： Dinesh Somasekhar , Yibin Ye , Muhammad M. Khellah , Fabrice Paillet , Stephen H. Tang , Ali Keshavarzi , Shih-Lien Lu , Vivek K. De
IPC分类号： G11C7/14 , G11C7/18 , G11C11/4097 , G11C11/4099 , G11C7/02
CPC分类号： G11C11/4099 , G11C7/14 , G11C7/18 , G11C11/4097
摘要： An apparatus and method for generating a reference in a memory circuit are disclosed. At least two dummy bit-cells are used to generate a reference voltage. One cell has high value stored and the other has a low value stored. The cells are activated and discharged into respective bit-lines. The bit-lines are equalized during the discharge process to generate a reference that is approximately a mid point between a high value cell and a low value cell.
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公开(公告)号：US07355246B2
公开(公告)日：2008-04-08
申请号：US11268430
申请日：2005-11-07
申请人： Ali Keshavarzi , Stephen H. Tang , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien L. Lu , Vivek K. De
发明人： Ali Keshavarzi , Stephen H. Tang , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien L. Lu , Vivek K. De
IPC分类号： H01L29/76
CPC分类号： G11C11/404 , G11C2211/4016 , H01L27/0207 , H01L27/0214 , H01L27/105 , H01L27/1052 , H01L27/108
摘要： Some embodiments provide a memory cell comprising a body region doped with charge carriers of a first type, a source region disposed in the body region and doped with charge carriers of a second type, and a drain region disposed in the body region and doped with charge carriers of the second type. According to some embodiments, the body region, the source region, and the drain region are oriented in a first direction, the body region and the source region form a first junction, and the body region and the drain region form a second junction. Moreover, a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased. Some embodiments further include a transistor oriented in a second direction, wherein the second direction is not parallel to the first direction.
摘要翻译： 一些实施例提供一种存储单元，其包括掺杂有第一类型的电荷载体的体区，设置在体区中的源极区，并掺杂有第二类型的电荷载流子，以及设置在体区中的掺杂电荷 第二种载体。 根据一些实施例，身体区域，源区域和漏极区域在第一方向上定向，身体区域和源区域形成第一结，并且体区域和漏区域形成第二结。 此外，在第一结无偏置的情况下，从体区到源极区的第一结的导电率基本上小于从体区到漏区的第二结的导电率，在第二结 是不偏不倚的 一些实施例还包括在第二方向上取向的晶体管，其中第二方向不平行于第一方向。
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公开(公告)号：US07321502B2
公开(公告)日：2008-01-22
申请号：US10956285
申请日：2004-09-30
申请人： Fabrice Paillet , Ali Keshavarzi , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H. Tang , Alavi Mohsen , Vivek K. De
发明人： Fabrice Paillet , Ali Keshavarzi , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H. Tang , Alavi Mohsen , Vivek K. De
IPC分类号： G11C17/00
摘要： A method is described that induced dielectric breakdown within a capacitor's dielectric material while driving a current through the capacitor. The current is specific to data that is being written into the capacitor. The method also involves reading the data by interpreting behavior of the capacitor that is determined by the capacitor's resistance, where, the capacitor's resistance is a consequence of the inducing and the driving.
摘要翻译： 描述了一种在驱动电流通过电容器的同时在电容器的电介质材料内感应电介质击穿的方法。 电流特定于正在写入电容器的数据。 该方法还涉及通过解释由电容器电阻确定的电容器的行为来读取数据，其中电容器的电阻是诱导和驱动的结果。
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公开(公告)号：US06992339B2
公开(公告)日：2006-01-31
申请号：US10750572
申请日：2003-12-31
申请人： Ali Keshavarzi , Stephen H. Tang , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien L. Lu , Vivek K. De
发明人： Ali Keshavarzi , Stephen H. Tang , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien L. Lu , Vivek K. De
IPC分类号： H01L27/10
CPC分类号： G11C11/404 , G11C2211/4016 , H01L27/105 , H01L27/1052 , H01L27/108 , H01L29/7841
摘要： Some embodiments provide a memory cell that includes a body region, a source region and a drain region. The body region is doped with charge carriers of a first type, the source region is disposed in the body region and doped with charge carriers of a second type, and the drain region is disposed in the body region and doped with charge carriers of the second type. The body region and the source region form a first junction, the body region and the drain region form a second junction, and a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased.
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公开(公告)号：US06906973B1
公开(公告)日：2005-06-14
申请号：US10746148
申请日：2003-12-24
申请人： Dinesh Somasekhar , Yibin Ye , Muhammad M. Khellah , Fabrice Paillet , Stephen H. Tang , Ali Keshavarzi , Shih-Lien L. Lu , Vivek K. De
发明人： Dinesh Somasekhar , Yibin Ye , Muhammad M. Khellah , Fabrice Paillet , Stephen H. Tang , Ali Keshavarzi , Shih-Lien L. Lu , Vivek K. De
CPC分类号： G11C7/12
摘要： Some embodiments provide pre-charge of a bit-line coupled to a memory cell to a reference voltage using a pre-charge device, discharge of the bit-line based on a value stored by the memory cell, injection during the discharge, of a first current into the bit-line using the pre-charge device, and injection, during the discharge, of a second current into a reference bit-line using a second pre-charge device. Also during the discharge, a difference is sensed between a voltage on the bit-line and a voltage on the reference bit-line.
摘要翻译： 一些实施例使用预充电器件将耦合到存储器单元的位线预充电至参考电压，基于存储器单元存储的值，放电期间的注入，放电期间的位线放电， 使用预充电器件进入位线的第一电流，以及在放电期间使用第二预充电器件将第二电流注入参考位线。 此外，在放电期间，在位线上的电压和参考位线上的电压之间感测到差异。
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公开(公告)号：US07102358B2
公开(公告)日：2006-09-05
申请号：US10880337
申请日：2004-06-29
申请人： Ali Keshavarzi , Fabrice Paillet , Muhammad M Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H Tang , Mohsen Alavi , Vivek K De
发明人： Ali Keshavarzi , Fabrice Paillet , Muhammad M Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H Tang , Mohsen Alavi , Vivek K De
IPC分类号： G01R31/26
CPC分类号： G01R31/2621 , G01R19/16571
摘要： A transistor may have degraded characteristics because of an overvoltage condition. The degraded characteristics may be sensed to determine that the transistor has previously been subjected to an overvoltage condition.
摘要翻译： 由于过电压状态，晶体管可能具有劣化特性。 可以感测劣化特性以确定晶体管先前已经经受过压状态。
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公开(公告)号：US07072205B2
公开(公告)日：2006-07-04
申请号：US10716755
申请日：2003-11-19
申请人： Stephen H. Tang , Ali Keshavarzi , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien L. Lu , Vivek K. De
发明人： Stephen H. Tang , Ali Keshavarzi , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien L. Lu , Vivek K. De
CPC分类号： G11C11/4094 , G11C11/404 , G11C11/4076 , G11C11/4085
摘要： A row of floating-body single transistor memory cells is written to in two phases.
摘要翻译： 一行浮体单晶体管存储单元分两个阶段写入。
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公开(公告)号：US07001811B2
公开(公告)日：2006-02-21
申请号：US10750566
申请日：2003-12-31
申请人： Ali Keshavarzi , Stephen H. Tang , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien L. Lu , Vivek K. De
发明人： Ali Keshavarzi , Stephen H. Tang , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien L. Lu , Vivek K. De
IPC分类号： H01L21/336
CPC分类号： G11C11/404 , G11C2211/4016 , H01L27/0207 , H01L27/0214 , H01L27/105 , H01L27/1052 , H01L27/108
摘要： Some embodiments provide a memory cell comprising a body region doped with charge carriers of a first type, a source region disposed in the body region and doped with charge carriers of a second type, and a drain region disposed in the body region and doped with charge carriers of the second type. According to some embodiments, the body region, the source region, and the drain region are oriented in a first direction, the body region and the source region form a first junction, and the body region and the drain region form a second junction. Moreover, a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased. Some embodiments further include a transistor oriented in a second direction, wherein the second direction is not parallel to the first direction.
摘要翻译： 一些实施例提供一种存储单元，其包括掺杂有第一类型的电荷载体的体区，设置在体区中的源极区，并掺杂有第二类型的电荷载流子，以及设置在体区中的掺杂电荷 第二种载体。 根据一些实施例，身体区域，源区域和漏极区域在第一方向上定向，身体区域和源区域形成第一结，并且体区域和漏区域形成第二结。 此外，在第一结无偏置的情况下，从体区到源极区的第一结的导电率基本上小于从体区到漏区的第二结的导电率，在第二结 是不偏不倚的 一些实施例还包括在第二方向上取向的晶体管，其中第二方向不平行于第一方向。
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