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    Method for forming a device isolation film of a semiconductor device
    1.
    发明授权
    Method for forming a device isolation film of a semiconductor device 失效
    用于形成半导体器件的器件隔离膜的方法

    公开(公告)号：US5523255A

    公开(公告)日：1996-06-04

    申请号：US455646

    申请日：1995-05-31

    申请人： Yong-woo Hyung ,  Don-young Ku ,  Byung-hong Chung ,  Yong-oon Hwang ,  Hung-mo Yang ,  Yun-seung Shin

    发明人： Yong-woo Hyung ,  Don-young Ku ,  Byung-hong Chung ,  Yong-oon Hwang ,  Hung-mo Yang ,  Yun-seung Shin

    IPC分类号： H01L21/316 ,  H01L21/318 ,  H01L21/32 ,  H01L21/76

    CPC分类号： H01L21/32 ,  Y10S438/911

    摘要： A method for forming a device isolation film of a semiconductor device, which includes the steps of forming a pad oxide film on a semiconductor substrate, forming an oxidation buffer layer on the pad oxide film, forming an oxidation prevention film on the oxidation buffer layer, forming an aperture in the oxidation prevention film and a longitudinally co-extensive recess in the oxidation buffer layer, to thereby expose a portion of the oxidation buffer layer, forming a cap oxide film on the exposed portion of the oxidation buffer layer by subjecting a first resultant structure obtained by the preceding steps to a thermal oxidation process, forming an oxynitride film at an interface between the cap oxide film and the oxidation buffer layer by heat-treating a second resultant structure obtained by the preceding steps in a nitrogen atmosphere, and, forming the device isolation film by subjecting a third resultant structure obtained by the preceding steps to a thermal oxidation process.

    摘要翻译： 一种形成半导体器件的器件隔离膜的方法，包括以下步骤：在半导体衬底上形成衬垫氧化膜，在衬垫氧化膜上形成氧化缓冲层，在氧化缓冲层上形成氧化防止膜， 在氧化防止膜中形成孔，在氧化缓冲层中形成纵向共同延伸的凹部，从而暴露出氧化缓冲层的一部分，在氧化缓冲层的暴露部分上形成帽氧化膜， 通过前述步骤获得的热成型结构，通过在氮气气氛中热处理由前述步骤获得的第二结果结构，在盖氧化膜和氧化缓冲层之间的界面处形成氧氮化物膜， 通过将由前述步骤获得的第三结果结构进行热氧化处理来形成器件隔离膜。

    METHODS OF FORMING FINE PATTERNS FOR SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHODS OF FORMING FINE PATTERNS FOR SEMICONDUCTOR DEVICE 有权
    形成半导体器件精细图案的方法

    公开(公告)号：US20130034963A1

    公开(公告)日：2013-02-07

    申请号：US13474764

    申请日：2012-05-18

    申请人： Byung-hong Chung ,  Cha-young Yoo ,  Dong-hyun Kim

    发明人： Byung-hong Chung ,  Cha-young Yoo ,  Dong-hyun Kim

    IPC分类号： H01L21/311

    CPC分类号： H01L21/32139 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L27/0207 ,  H01L27/10888 ,  H01L27/10891 ,  H01L27/11568

    摘要： Methods of forming fine patterns for a semiconductor device include forming a hard mask layer on an etch target layer; forming a carbon containing layer on the hard mask layer; forming carbon containing layer patterns by etching the carbon containing layer; forming spacers covering opposing side walls of each of the carbon containing layer patterns; removing the carbon containing layer patterns; forming hard mask patterns by etching the hard mask layer using the spacers as a first etching mask; and etching the etch target layer by using the hard mask patterns a second etching mask.

    摘要翻译： 形成用于半导体器件的精细图案的方法包括在蚀刻目标层上形成硬掩模层; 在所述硬掩模层上形成含碳层; 通过蚀刻含碳层形成含碳层图案; 形成覆盖每个含碳层图案的相对侧壁的间隔物; 去除含碳层图案; 通过使用间隔物作为第一蚀刻掩模蚀刻硬掩模层来形成硬掩模图案; 以及通过使用所述硬掩模图案蚀刻所述蚀刻目标层的第二蚀刻掩模。

    Methods of forming isolated semiconductor device active regions
    3.
    发明授权
    Methods of forming isolated semiconductor device active regions 失效
    形成隔离半导体器件有源区的方法

    公开(公告)号：US5677234A

    公开(公告)日：1997-10-14

    申请号：US665294

    申请日：1996-06-18

    申请人： Bon-young Koo ,  Byung-hong Chung ,  Hee-seok Kim ,  Yun-gi Kim

    发明人： Bon-young Koo ,  Byung-hong Chung ,  Hee-seok Kim ,  Yun-gi Kim

    IPC分类号： H01L21/316 ,  H01L21/32 ,  H01L21/76

    CPC分类号： H01L21/32

    摘要： Methods of forming semiconductor device active regions include the steps of forming a buffer layer containing a material susceptible to oxidation, such as polycrystalline or amorphous silicon, on a semiconductor substrate. To inhibit any native oxide film on the buffer layer from facilitating the formation of field oxide isolation regions having bird's beaks, the native oxide film is converted to a nitrogen containing film, such as silicon oxynitride, by nitrating the native oxide film. The silicon oxynitride film can be formed by exposing the oxide film to a nitrogen containing plasma, implanting nitrogen ions into the oxide film or annealing the oxide film in a nitrogen containing atmosphere, for example. During the nitrating step, chemically active oxygen in the native oxide film becomes bound to the nitrogen incorporated therein. A top oxidation resistant layer containing silicon nitride can then be formed on the nitrated surface of the buffer layer and used as an oxidation mask during a subsequent step of oxidizing the buffer layer to form field oxide isolation regions. By binding chemically active oxygen to nitrogen during the nitrating step, lateral oxidation under the top oxidation resistant layer is inhibited by limiting the lateral transport of chemically active oxygen. The masking properties of the top oxidation resistant layer can therefore be enhanced and utilized to form field oxide isolation regions having short or nonexistent bird beak's.

    摘要翻译： 形成半导体器件有源区的方法包括在半导体衬底上形成含有易于氧化的材料（例如多晶或非晶硅）的缓冲层的步骤。 为了抑制缓冲层上的任何自然氧化膜促进形成具有鸟喙的场氧化物隔离区，通过硝化天然氧化物膜将天然氧化物膜转化成含氮膜如氮氧化硅。 氧氮化硅膜可以通过将氧化物膜暴露于含氮等离子体，将氮离子注入到氧化膜中或者在含氮气氛中退火氧化膜来形成。 在硝化步骤期间，天然氧化膜中的化学活性氧与结合在其中的氮结合。 然后可以在缓冲层的硝化表面上形成含有氮化硅的顶部耐氧化层，并且在随后的氧化缓冲层的步骤中用作氧化掩模以形成场氧化物隔离区。 通过在硝化步骤期间将化学活性氧与氮结合，通过限制化学活性氧的横向运输来抑制顶部抗氧​​化层下的侧向氧化。 因此，顶部抗氧化层的掩蔽性能可以被增强并且用于形成具有短或不存在的鸟喙的场氧化物隔离区。