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    Method for forming a device isolation film of a semiconductor device
    1.
    发明授权
    Method for forming a device isolation film of a semiconductor device 失效
    用于形成半导体器件的器件隔离膜的方法

    公开(公告)号：US5523255A

    公开(公告)日：1996-06-04

    申请号：US455646

    申请日：1995-05-31

    申请人： Yong-woo Hyung ,  Don-young Ku ,  Byung-hong Chung ,  Yong-oon Hwang ,  Hung-mo Yang ,  Yun-seung Shin

    发明人： Yong-woo Hyung ,  Don-young Ku ,  Byung-hong Chung ,  Yong-oon Hwang ,  Hung-mo Yang ,  Yun-seung Shin

    IPC分类号： H01L21/316 ,  H01L21/318 ,  H01L21/32 ,  H01L21/76

    CPC分类号： H01L21/32 ,  Y10S438/911

    摘要： A method for forming a device isolation film of a semiconductor device, which includes the steps of forming a pad oxide film on a semiconductor substrate, forming an oxidation buffer layer on the pad oxide film, forming an oxidation prevention film on the oxidation buffer layer, forming an aperture in the oxidation prevention film and a longitudinally co-extensive recess in the oxidation buffer layer, to thereby expose a portion of the oxidation buffer layer, forming a cap oxide film on the exposed portion of the oxidation buffer layer by subjecting a first resultant structure obtained by the preceding steps to a thermal oxidation process, forming an oxynitride film at an interface between the cap oxide film and the oxidation buffer layer by heat-treating a second resultant structure obtained by the preceding steps in a nitrogen atmosphere, and, forming the device isolation film by subjecting a third resultant structure obtained by the preceding steps to a thermal oxidation process.

    摘要翻译： 一种形成半导体器件的器件隔离膜的方法，包括以下步骤：在半导体衬底上形成衬垫氧化膜，在衬垫氧化膜上形成氧化缓冲层，在氧化缓冲层上形成氧化防止膜， 在氧化防止膜中形成孔，在氧化缓冲层中形成纵向共同延伸的凹部，从而暴露出氧化缓冲层的一部分，在氧化缓冲层的暴露部分上形成帽氧化膜， 通过前述步骤获得的热成型结构，通过在氮气气氛中热处理由前述步骤获得的第二结果结构，在盖氧化膜和氧化缓冲层之间的界面处形成氧氮化物膜， 通过将由前述步骤获得的第三结果结构进行热氧化处理来形成器件隔离膜。

    Apparatus for forming a film on a substrate
    4.
    发明授权
    Apparatus for forming a film on a substrate 有权
    用于在基板上形成膜的装置

    公开(公告)号：US06416584B1

    公开(公告)日：2002-07-09

    申请号：US09350407

    申请日：1999-07-08

    申请人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

    发明人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

    IPC分类号： C23C1600

    CPC分类号： C23C16/56 ,  C23C16/405

    摘要： An apparatus for forming a film on a substrate includes a reaction chamber and gas supply lines. The gas supply lines supply gases for depositing and annealing the film. Depositing a dielectric film and annealing the dielectric film are performed in situ using the reaction chamber. Thus, the time required for forming the dielectric film is shortened, improving the productivity. Also, deposition and annealing of the dielectric film are performed in the same reaction chamber, so that less area is required for manufacturing equipment.

    摘要翻译： 在基板上形成膜的装置包括反应室和气体供给管线。 气体供应管线供应用于沉积和退火膜的气体。 使用反应室原位进行沉积介电膜并退火介电膜。 因此，缩短了形成电介质膜所需的时间，提高了生产率。 此外，电介质膜的沉积和退火在相同的反应室中进行，因此制造设备需要较少的面积。

    Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film
    5.
    发明授权
    Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film 失效
    具有氧化钽膜的半导体存储器件的电容器的制造方法

    公开(公告)号：US06207489B1

    公开(公告)日：2001-03-27

    申请号：US09393186

    申请日：1999-09-10

    申请人： Kab-jin Nam ,  Seok-jun Won ,  Ki-yeon Park ,  Yong-woo Hyung ,  Young-wook Park

    发明人： Kab-jin Nam ,  Seok-jun Won ,  Ki-yeon Park ,  Yong-woo Hyung ,  Young-wook Park

    IPC分类号： H01L218242

    CPC分类号： H01L21/02183 ,  C03C23/0075 ,  H01L21/02271 ,  H01L21/0231 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/31604 ,  H01L27/1085 ,  H01L28/56

    摘要： A method for manufacturing a capacitor having a dielectric film formed of a tantalum oxide film. The method includes forming a lower electrode that is electrically connected to an active region of a semiconductor substrate. A pre-treatment film including a component selected from a group consisting of silicon oxide, silicon nitride, and combinations thereof, is formed on the surface of the lower electrode. A dielectric film is formed on the pre-treatment film using a Ta precursor. The dielectric film includes a first dielectric layer deposited at a first temperature selected from a designated temperature range, and a second dielectric layer deposited at a second temperature different from the first temperature and selected from the same designated temperature range. A thermal treatment is thereafter performed on the dielectric film in an oxygen atmosphere.

    摘要翻译： 一种制造具有由氧化钽膜形成的电介质膜的电容器的方法。 该方法包括形成电连接到半导体衬底的有源区的下电极。 在下电极的表面上形成包括选自氧化硅，氮化硅及其组合的组分的预处理膜。 使用Ta前体在预处理膜上形成电介质膜。 电介质膜包括在选自指定温度范围的第一温度下沉积的第一介电层和在与第一温度不同的第二温度下沉积并选自相同指定温度范围的第二电介质层。 此后在氧气氛中对电介质膜进行热处理。

    Method for forming a thin film
    6.
    发明授权
    Method for forming a thin film 失效

    公开(公告)号：US07481882B2

    公开(公告)日：2009-01-27

    申请号：US10131761

    申请日：2002-04-23

    申请人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

    发明人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

    IPC分类号： H01L21/285 ,  H01L27/10

    CPC分类号： C23C16/56 ,  C23C16/405

    摘要： A method for forming a film includes forming the film on a substrate, followed by performing a first annealing of the film at a temperature lower than a crystallization temperature of the film. A second annealing of the film is performed at a temperature higher that the crystallization temperature. Forming the film and the first annealing of the film are performed in situ in a chamber. Alternatively, the first and second annealing are performed in situ in an apparatus.