公开(公告)号：US08525304B2

公开(公告)日：2013-09-03

申请号：US13110240

申请日：2011-05-18

申请人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

IPC分类号： H01L23/58

CPC分类号： H01L21/02554 ,  H01L21/02488 ,  H01L21/02664 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.

公开(公告)号：US09263589B2

公开(公告)日：2016-02-16

申请号：US13110236

申请日：2011-05-18

申请人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/78606 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869

摘要： An object of the present invention is to manufacture a semiconductor device where fluctuation in electrical characteristics is small and reliability is high in a transistor in which an oxide semiconductor is used. An insulating layer from which oxygen is released by heating is used as a base insulating layer of an oxide semiconductor layer which forms a channel. Oxygen is released from the base insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the base insulating layer and the oxide semiconductor layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.

摘要翻译： 本发明的目的是制造其中使用氧化物半导体的晶体管的电特性波动小并且可靠性高的半导体器件。 使用通过加热而释放氧的绝缘层作为形成沟道的氧化物半导体层的基极绝缘层。 氧从基底绝缘层释放出来，由此可以减少氧化物半导体层的缺氧和基底绝缘层与氧化物半导体层之间的界面状态。 因此，可以制造电特性波动小，可靠性高的半导体装置。

公开(公告)号：US08853684B2

公开(公告)日：2014-10-07

申请号：US13109594

申请日：2011-05-17

申请人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato ,  Mitsuhiro Ichijo ,  Toshiya Endo

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato ,  Mitsuhiro Ichijo ,  Toshiya Endo

IPC分类号： H01L29/04 ,  H01L29/786 ,  H01L29/49

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

摘要： In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which forms a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.

摘要翻译： 在具有栅极结构的晶体管中，栅电极层与形成沟道区的氧化物半导体层重叠，栅极绝缘层介于其间，当绝缘层中含有大量的氢时，氢扩散 由于绝缘层与氧化物半导体层接触，所以进入氧化物半导体层; 因此，晶体管的电特性降低。 本发明的目的是提供一种具有良好电特性的半导体器件。 与形成沟道区域的氧化物半导体层接触的绝缘层使用其氢浓度小于6×1020原子/ cm3的绝缘层。 使用绝缘层，可以防止氢的扩散，并且可以提供具有良好电特性的半导体器件。

公开(公告)号：US08476719B2

公开(公告)日：2013-07-02

申请号：US13110241

申请日：2011-05-18

申请人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606

摘要： Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.

摘要翻译： 氧从绝缘层释放，由此可以减少氧化物半导体层中的氧缺乏和绝缘层与氧化物半导体层之间的界面状态。 因此，可以制造可靠性高，电特性变化小的半导体装置。

公开(公告)号：US09299851B2

公开(公告)日：2016-03-29

申请号：US13282529

申请日：2011-10-27

申请人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda

IPC分类号： H01L21/84 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L21/441 ,  H01L21/465 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869

摘要： An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited.

摘要翻译： 本发明的目的是提供一种包括控制载流子密度的氧氮化物半导体的半导体器件。 通过将控制氮引入到氧化物半导体层中，可以制造其中具有期望的载流子密度和特性的氧氮化物半导体用于沟道的晶体管。 此外，通过使用氧氮化物半导体，即使在氮氧化物半导体层和源电极之间以及氧氮化物半导体层和漏电极之间没有设置低电阻层等的情况下，也可以表现出良好的接触特性。

公开(公告)号：US09202822B2

公开(公告)日：2015-12-01

申请号：US13316604

申请日：2011-12-12

申请人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Hitomi Sato ,  Yuhei Sato

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Hitomi Sato ,  Yuhei Sato

IPC分类号： H01L27/12 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L29/4908 ,  H01L21/28088 ,  H01L21/288 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/7869

摘要： To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.

摘要翻译： 制造在不使用背栅电极的情况下控制阈值电压的晶体管，用于控制阈值电压的电路和杂质导入方法。 使用晶体管制造具有良好的电特性，高可靠性和低功耗的半导体器件。 使用包含其组成被控制的氧化钨膜的栅电极。 通过氧化钨膜的成膜方法调整组合物等，由此可以控制功函数。 通过使用功函数被控制为栅电极的一部分的氧化钨膜，可以控制晶体管的阈值。 通过使用阈值电压被控制的晶体管，可以制造具有良好的电特性，高可靠性和低功耗的半导体器件。

公开(公告)号：US08748889B2

公开(公告)日：2014-06-10

申请号：US13188992

申请日：2011-07-22

申请人： Toshinari Sasaki ,  Hitomi Sato ,  Kosei Noda ,  Yuta Endo ,  Mizuho Ikarashi ,  Keitaro Imai ,  Atsuo Isobe ,  Yutaka Okazaki

发明人： Toshinari Sasaki ,  Hitomi Sato ,  Kosei Noda ,  Yuta Endo ,  Mizuho Ikarashi ,  Keitaro Imai ,  Atsuo Isobe ,  Yutaka Okazaki

IPC分类号： H01L29/12 ,  H01L21/36

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

摘要： It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.

摘要翻译： 本发明的目的是制造其中包括氧化物半导体的晶体管具有常态特性，电特性波动小，可靠性高的半导体器件。 首先，在基板上进行第一热处理，在基板上形成基极绝缘层，在基底绝缘层上形成氧化物半导体层，对形成氧化物半导体的工序进行第一热处理的工序 在不暴露于空气的情况下执行层。 接下来，在形成氧化物半导体层之后，进行第二热处理。 使用通过加热而释放氧的绝缘层作为基底绝缘层。

公开(公告)号：US20120018727A1

公开(公告)日：2012-01-26

申请号：US13185779

申请日：2011-07-19

申请人： Yuta Endo ,  Kosei Noda ,  Toshinari Sasaki

发明人： Yuta Endo ,  Kosei Noda ,  Toshinari Sasaki

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66969 ,  H01L21/02164 ,  H01L21/02367 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/7869

摘要： An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region.

摘要翻译： 使用释放大量氧的绝缘层作为与氧化物半导体层的沟道区域接触的绝缘层，并且使用释放少量氧的绝缘层作为与源极接触的绝缘层 区域和氧化物半导体层的漏极区域。 通过从释放大量氧的绝缘层释放氧气，可以减少沟道区域中的氧缺乏以及绝缘层和沟道区域之间的界面态密度，从而可以降低电子变化小的高度可靠的半导体器件 特性可以制造。 源极区域和漏极区域设置成与释放少量氧气的绝缘层接触，从而抑制源极区域和漏极区域的电阻的增加。

公开(公告)号：US08890150B2

公开(公告)日：2014-11-18

申请号：US13353608

申请日：2012-01-19

申请人： Toshinari Sasaki ,  Kosei Noda ,  Yuta Endo

发明人： Toshinari Sasaki ,  Kosei Noda ,  Yuta Endo

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. A p-type oxide semiconductor material is contained in an n-type oxide semiconductor film, whereby carriers which are generated in the oxide semiconductor film without intention can be reduced. This is because electrons generated in the n-type oxide semiconductor film without intention are recombined with holes generated in the p-type oxide semiconductor material to disappear. Accordingly, it is possible to reduce carriers which are generated in the oxide semiconductor film without intention.

摘要翻译： 通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。 p型氧化物半导体材料包含在n型氧化物半导体膜中，由此可以减少在氧化物半导体膜中产生的载流子。 这是因为在n型氧化物半导体膜中产生的电子没有意图与在p型氧化物半导体材料中产生的空穴重新组合而消失。 因此，可以无意地减少在氧化物半导体膜中产生的载流子。

公开(公告)号：US08802515B2

公开(公告)日：2014-08-12

申请号：US13289436

申请日：2011-11-04

申请人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66969 ,  H01L21/02 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L21/425 ,  H01L21/477 ,  H01L29/42384 ,  H01L29/518 ,  H01L29/78618 ,  H01L29/7869

摘要： A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.

摘要翻译： 使用其中氧化物半导体包括在沟道区域中的晶体管制造半导体器件，并且不太可能引起由于短沟道效应引起的电特性的变化。 半导体器件包括具有一对氧氮化物半导体区域的氧化物半导体膜，该氧氮化物半导体区域包括氮和夹在一对氧氮化物半导体区域之间的氧化物半导体区域，栅极绝缘膜和设置在氧化物半导体区域上的栅电极，栅极绝缘 胶片位于其间。 这里，一对氧氮化物半导体区域用作晶体管的源极区域和漏极区域，氧化物半导体区域用作晶体管的沟道区域。