公开(公告)号：US08748889B2

公开(公告)日：2014-06-10

申请号：US13188992

申请日：2011-07-22

申请人： Toshinari Sasaki ,  Hitomi Sato ,  Kosei Noda ,  Yuta Endo ,  Mizuho Ikarashi ,  Keitaro Imai ,  Atsuo Isobe ,  Yutaka Okazaki

发明人： Toshinari Sasaki ,  Hitomi Sato ,  Kosei Noda ,  Yuta Endo ,  Mizuho Ikarashi ,  Keitaro Imai ,  Atsuo Isobe ,  Yutaka Okazaki

IPC分类号： H01L29/12 ,  H01L21/36

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

摘要： It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.

摘要翻译： 本发明的目的是制造其中包括氧化物半导体的晶体管具有常态特性，电特性波动小，可靠性高的半导体器件。 首先，在基板上进行第一热处理，在基板上形成基极绝缘层，在基底绝缘层上形成氧化物半导体层，对形成氧化物半导体的工序进行第一热处理的工序 在不暴露于空气的情况下执行层。 接下来，在形成氧化物半导体层之后，进行第二热处理。 使用通过加热而释放氧的绝缘层作为基底绝缘层。

公开(公告)号：US20120214259A1

公开(公告)日：2012-08-23

申请号：US13213458

申请日：2011-08-19

申请人： Yutaka Okazaki ,  Keitaro Imai ,  Atsuo Isobe ,  Shunpei Yamazaki

发明人： Yutaka Okazaki ,  Keitaro Imai ,  Atsuo Isobe ,  Shunpei Yamazaki

IPC分类号： H01L21/66

CPC分类号： G01N23/2258 ,  G01N2223/611

摘要： Experience shows that, in a material containing oxygen as a main component, an excess or deficiency of trace amounts of oxygen with respect to a stoichiometric composition, or the like affects properties of the material. An oxygen diffusion evaluation method of an oxide film stacked body includes the steps of: measuring a quantitative value of one of oxygen isotopes of a substrate including a first oxide film and a second oxide film which has an existence proportion of an oxygen isotope different from an existence proportion of an oxygen isotope in the first oxide film in a depth direction, by secondary ion mass spectrometry; and evaluating the one of the oxygen isotopes diffused from the first oxide film to the second oxide film.

摘要翻译： 经验表明，在含氧作为主要成分的材料中，相对于化学计量组成等的痕量氧的过量或不足影响材料的性能。 氧化膜层叠体的氧扩散评价方法包括以下步骤：测量包含第一氧化物膜和第二氧化物膜的基板的氧同位素的定量值，所述氧化物存在比例与氧同位素 通过二次离子质谱法在深度方向上在第一氧化膜中的氧同位素的存在比例; 并评估从第一氧化物膜扩散到第二氧化物膜的氧同位素中的一种。

公开(公告)号：US08450123B2

公开(公告)日：2013-05-28

申请号：US13213458

申请日：2011-08-19

申请人： Yutaka Okazaki ,  Keitaro Imai ,  Atsuo Isobe ,  Shunpei Yamazaki

发明人： Yutaka Okazaki ,  Keitaro Imai ,  Atsuo Isobe ,  Shunpei Yamazaki

IPC分类号： H01L21/66

CPC分类号： G01N23/2258 ,  G01N2223/611

摘要： Experience shows that, in a material containing oxygen as a main component, an excess or deficiency of trace amounts of oxygen with respect to a stoichiometric composition, or the like affects properties of the material. An oxygen diffusion evaluation method of an oxide film stacked body includes the steps of: measuring a quantitative value of one of oxygen isotopes of a substrate including a first oxide film and a second oxide film which has an existence proportion of an oxygen isotope different from an existence proportion of an oxygen isotope in the first oxide film in a depth direction, by secondary ion mass spectrometry; and evaluating the one of the oxygen isotopes diffused from the first oxide film to the second oxide film.

摘要翻译： 经验表明，在含氧作为主要成分的材料中，相对于化学计量组成等的痕量氧的过量或不足影响材料的性能。 氧化膜层叠体的氧扩散评价方法包括以下步骤：测量包含第一氧化物膜和第二氧化物膜的基板的氧同位素的定量值，所述氧化物存在比例与氧同位素 通过二次离子质谱法在深度方向上在第一氧化膜中的氧同位素的存在比例; 并评估从第一氧化物膜扩散到第二氧化物膜的氧同位素中的一种。

公开(公告)号：US08569753B2

公开(公告)日：2013-10-29

申请号：US13117588

申请日：2011-05-27

申请人： Atsuo Isobe ,  Yoshinori Ieda ,  Keitaro Imai ,  Kiyoshi Kato ,  Yuto Yakubo ,  Yuki Hata

发明人： Atsuo Isobe ,  Yoshinori Ieda ,  Keitaro Imai ,  Kiyoshi Kato ,  Yuto Yakubo ,  Yuki Hata

IPC分类号： H01L21/02

CPC分类号： H01L27/105 ,  H01L27/1052 ,  H01L27/108 ,  H01L27/1156 ,  H01L27/1225 ,  H01L28/60

摘要： The semiconductor device is provided in which a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is arranged in matrix and a wiring (also referred to as a bit line) for connecting one of the memory cells and another one of the memory cells and a source or drain region in the first transistor are electrically connected through a conductive layer and a source or drain electrode in the second transistor provided therebetween. With this structure, the number of wirings can be reduced in comparison with a structure in which the source or drain electrode in the first transistor and the source or drain electrode in the second transistor are connected to different wirings. Thus, the integration degree of a semiconductor device can be increased.

摘要翻译： 提供了一种半导体器件，其中包括第一晶体管，第二晶体管和电容器的多个存储单元被布置成矩阵，并且布线（也称为位线）用于连接其中一个存储单元和另一个 第一晶体管中的一个存储单元和源极或漏极区域通过导电层和设置在其间的第二晶体管中的源极或漏极电连接。 利用这种结构，与第一晶体管中的源极或漏极以及第二晶体管中的源极或漏极连接到不同布线的结构相比，可以减少布线的数量。 因此，可以提高半导体器件的集成度。

公开(公告)号：US08430326B2

公开(公告)日：2013-04-30

申请号：US13112373

申请日：2011-05-20

申请人： Jun Koyama ,  Keitaro Imai

发明人： Jun Koyama ,  Keitaro Imai

IPC分类号： G06K19/06

CPC分类号： H01L27/13 ,  G11C17/16 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1266

摘要： A semiconductor device which may be used as an ID chip and data may be rewritten only one time. In addition, a semiconductor device may be used as an ID chip and data may be written except when manufacturing the chip. The invention has a modulating circuit, a demodulating circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate. The modulating circuit and the demodulating circuit are electrically connected to an antenna circuit, the demodulating circuit is connected to the logic circuit, the memory circuit stores an output signal of the logic circuit, and the memory circuit is a fuse memory circuit using a fuse element.

摘要翻译： 可以用作ID芯片和数据的半导体器件可以仅重写一次。 此外，半导体器件可以用作ID芯片，并且可以写入数据，除非制造芯片。 本发明在绝缘基板上具有调制电路，解调电路，逻辑电路，存储电路和天线电路。 调制电路和解调电路电连接到天线电路，解调电路连接到逻辑电路，存储电路存储逻辑电路的输出信号，存储电路是使用熔丝元件的熔丝存储电路 。

公开(公告)号：US08040059B2

公开(公告)日：2011-10-18

申请号：US10569528

申请日：2004-08-25

申请人： Keitaro Imai ,  Aya Anzai ,  Yasuko Watanabe

发明人： Keitaro Imai ,  Aya Anzai ,  Yasuko Watanabe

IPC分类号： H01L51/50 ,  H01L51/52

CPC分类号： H01L27/3276 ,  H01L23/564 ,  H01L27/1222 ,  H01L27/3258 ,  H01L51/0005 ,  H01L51/5246 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.

摘要翻译： 本发明的目的是提供一种防止水和/或氧的外部侵入并防止由于这些侵入物质引起的发光元件劣化的显示装置，并且提供一种制造方法，其包括用于制造显示器的简单制造步骤 设备。 本发明提供了一种在暴露的层间绝缘体的边缘上具有密封材料的显示装置，用于防止来自层间绝缘体的水和/或氧的侵入。 此外，本发明提供一种在暴露的层间绝缘体上具有阻挡体的显示装置，用于防止水和/或氧从层间绝缘体的侵入。 此外，在生产显示装置的制造步骤中应用液滴放电技术可以消除诸如曝光和显影的光刻步骤。 因此，提供了一种生产具有提高的产量的显示装置的方法。

公开(公告)号：US20110073865A1

公开(公告)日：2011-03-31

申请号：US12960711

申请日：2010-12-06

申请人： Keitaro Imai

发明人： Keitaro Imai

IPC分类号： H01L33/16

CPC分类号： G02F1/136286 ,  G02F2001/136295 ,  H01L27/1292

摘要： Conventionally, photolithography and anisotropic etching are performed to form a plug between an electrode and a wiring, etc., thereby increasing the number of steps, getting the throughput worse, and producing unnecessary materials. To solve the problems, the present invention provides a method for manufacturing a display device, including the formation steps of a conductive layer or wirings, and a contact plug that can treat a larger substrate. In the case of forming a plug for electrically connecting conductive patterns comprising plural layers, a pillar made of a conductor is formed over a base conductive layer pattern, and then, after an insulating film is formed over the entire surface, the insulating film is etched back to expose the conductor pillar, and a conductive pattern in an upper layer is formed by ink jetting. In this case, when the conductor pillar is processed, a resist to be a mask can be formed in itself by ink jetting.

摘要翻译： 通常，进行光刻和各向异性蚀刻以在电极和布线等之间形成插塞，从而增加步骤数量，使吞吐量更差并且产生不必要的材料。 为了解决这些问题，本发明提供一种显示装置的制造方法，其包括导电层或布线的形成步骤以及可处理较大基板的接触塞。 在形成用于电连接包括多层的导电图案的插头的情况下，在基底导电层图案上形成由导体制成的柱，然后在整个表面上形成绝缘膜之后，蚀刻绝缘膜 背面露出导体柱，并且通过喷墨形成上层中的导电图案。 在这种情况下，当处理导体柱时，可以通过喷墨形成本身作为掩模的抗蚀剂。

公开(公告)号：US07482743B2

公开(公告)日：2009-01-27

申请号：US11592250

申请日：2006-11-03

申请人： Satoshi Seo ,  Keitaro Imai

发明人： Satoshi Seo ,  Keitaro Imai

IPC分类号： H05B33/00

CPC分类号： H01L51/5092 ,  H01L27/3244 ,  Y10S428/917

摘要： Provided is a means for improving the capability of injecting electrons from a cathode in a luminous element and solving problems about the production process thereof. In the present invention, a material having a smaller work function than a cathode material is used to form an inorganic conductive layer between the cathode and an organic compound layer. In this way, the capability of injecting electrons from the cathode can be improved. Furthermore, the film thereof can be thicker than that of a conventional cathode buffer layer formed by using an insulating material. Therefore, the film thickness can easily be controlled, and a decrease in production costs and an improvement in yield can be achieved.

摘要翻译： 提供了用于提高从发光元件中的阴极注入电子的能力的手段，并且解决了关于其制造方法的问题。 在本发明中，使用具有比正极材料功函数小的材料在阴极和有机化合物层之间形成无机导电层。 以这种方式，可以提高从阴极注入电子的能力。 此外，其膜可以比通过使用绝缘材料形成的常规阴极缓冲层的膜厚。 因此，可以容易地控制膜厚度，并且可以实现生产成本的降低和产率的提高。

公开(公告)号：US07354808B2

公开(公告)日：2008-04-08

申请号：US10915428

申请日：2004-08-11

申请人： Koji Muranaka ,  Ryoji Nomura ,  Keitaro Imai ,  Shinji Maekawa

发明人： Koji Muranaka ,  Ryoji Nomura ,  Keitaro Imai ,  Shinji Maekawa

IPC分类号： H01L21/00

CPC分类号： B41J2/01 ,  B41J2202/09 ,  G02B5/201 ,  Y10S438/942 ,  Y10T428/31504

摘要： An object of the invention is to provide a resist composition which is possible to form a film by using a drawing means and which functions as a protective film used at the time of etching, adding impurities, or the like. In addition, an object is also to provide a manufacturing step of a semiconductor device in which a substance with high safety and that is easily treated can be used as a peeling solution, and which pays attention to an environment. A resist composition of the invention contains water-soluble homopolymer, water, or a solvent that has compatibility with water and can dissolve the water-soluble homopolymer. In addition, a method for manufacturing the semiconductor device of the invention has a step of removing the protective film formed by discharging the resist composition of the invention by using a drawing means with water after using it.

摘要翻译： 本发明的目的是提供一种抗蚀剂组合物，其可以通过使用拉伸装置形成膜，并且其作为在蚀刻时使用的保护膜，添加杂质等。 此外，目的还在于提供一种半导体装置的制造工序，其中可以使用具有高安全性且易于处理的物质作为剥离溶液，并注意环境。 本发明的抗蚀剂组合物含有水溶性均聚物，水或与水相容并能溶解水溶性均聚物的溶剂。 此外，本发明的半导体装置的制造方法具有通过在使用了本发明的抗蚀剂组合物后通过使用拉伸装置除去形成的保护膜的步骤。

公开(公告)号：US20070046196A1

公开(公告)日：2007-03-01

申请号：US11592250

申请日：2006-11-03

申请人： Satoshi Seo ,  Keitaro Imai

发明人： Satoshi Seo ,  Keitaro Imai

IPC分类号： H01L51/00

CPC分类号： H01L51/5092 ,  H01L27/3244 ,  Y10S428/917

摘要： Provided is a means for improving the capability of injecting electrons from a cathode in a luminous element and solving problems about the production process thereof. In the present invention, a material having a smaller work function than a cathode material is used to form an inorganic conductive layer between the cathode and an organic compound layer. In this way, the capability of injecting electrons from the cathode can be improved. Furthermore, the film thereof can be thicker than that of a conventional cathode buffer layer formed by using an insulating material. Therefore, the film thickness can easily be controlled, and a decrease in production costs and an improvement in yield can be achieved.

摘要翻译： 提供了用于提高从发光元件中的阴极注入电子的能力的手段，并且解决了关于其制造方法的问题。 在本发明中，使用具有比正极材料功函数小的材料在阴极和有机化合物层之间形成无机导电层。 以这种方式，可以提高从阴极注入电子的能力。 此外，其膜可以比通过使用绝缘材料形成的常规阴极缓冲层的膜厚。 因此，可以容易地控制膜厚度，并且可以实现生产成本的降低和产率的提高。