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公开(公告)号:US09948278B2
公开(公告)日:2018-04-17
申请号:US15190294
申请日:2016-06-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Tetsuro Okuda
IPC: H03H9/72 , H03H9/70 , H03H9/64 , H03H9/54 , H01P1/18 , H01P1/213 , H01P1/20 , H03H9/05 , H03H9/00 , H01P1/201
CPC classification number: H03H9/725 , H01P1/184 , H01P1/201 , H01P1/213 , H01P1/2135 , H03H9/0009 , H03H9/0014 , H03H9/0028 , H03H9/0085 , H03H9/0557 , H03H9/0576 , H03H9/64 , H03H9/706
Abstract: In a filter device, a first filter and a second filter are connected to a common connection point by a filter connection conductor line including a first conductor line portion, and a parallel connection area with an electrical length shorter than that in a single conductor line is provided in the first conductor line portion.
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公开(公告)号:US20170250678A1
公开(公告)日:2017-08-31
申请号:US15511899
申请日:2014-10-27
Applicant: Nokia Solutions and Networks Oy
Inventor: Tero-Anssi JUNTUNEN , Veikko Sakari LUKKARI , Marko Tapio Oskari ISOMAKI , Timo Markus KARHU , Tuomo Teuvo Tapani RATY , Jarno Mikael HOLOPAINEN , Kimmo Kalervo KARHU , Jukka KILPELAINEN
CPC classification number: H03J3/12 , H01P1/201 , H01P1/2053 , H01P1/2056 , H03J3/00
Abstract: There is provided a method, including obtaining information indicating at least one reference characteristic; obtaining input data, the input data relating to the output of the tunable filter; determining, based on the input data, at least one characteristic of the tunable filter; upon detecting that the at least one determined characteristic does not match with the at least one reference characteristic, determining tuning instructions for the tunable filter; and applying the tuning instructions in adjusting the tunable filter.
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公开(公告)号:US20170126195A1
公开(公告)日:2017-05-04
申请号:US15298459
申请日:2016-10-20
Applicant: Associated Universities, Inc.
Inventor: Matthew Alexander Morgan
IPC: H03H7/01
CPC classification number: H03H7/06 , H01F38/14 , H01F2038/143 , H01P1/201 , H01P1/207 , H03H7/38 , H03H7/42 , H03H7/46
Abstract: Reflectionless low-pass, high-pass, band-pass, band-stop, all-pass, all-stop, and multi-band filters, as well as a method for designing such filters is disclosed, along with a method of enhancing the performance of such filters through the use of unmatched sub-networks to realize an optimal frequency response, such as the Chebyshev equal-ripple response. These filters preferably function by absorbing the stop-band portion of the spectrum rather than reflecting it back to the source, which has significant advantages in many different applications. The unmatched sub-networks preferably offer additional degrees of freedom by which element values can be assigned to realize improved cutoff sharpness, stop-band rejection, or other measures of performance.
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公开(公告)号:US09281797B2
公开(公告)日:2016-03-08
申请号:US14619497
申请日:2015-02-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Hirokazu Yazaki
IPC: H01P5/18 , H01P1/23 , H03H7/24 , H03H7/38 , H01P1/201 , H01P1/22 , H01P1/203 , H03H7/06 , H03H1/00
CPC classification number: H03H7/38 , H01P1/201 , H01P1/20345 , H01P1/22 , H03H7/06 , H03H7/24 , H03H2001/0085
Abstract: A high-frequency device includes a substrate including a plurality of layers that are stacked on top of one another and that include dielectric and magnetic layers, terminals, pattern conductors each formed on one layer, and via conductors each extending through one layer. The pattern conductors and via conductors connect the terminals and form a signal line that transmits a high-frequency signal. A first portion of the signal line includes a via conductor extending through one magnetic layer and/or a pattern conductor sandwiched between two magnetic layers and has a predetermined resistance to the high-frequency signal. A second portion of the signal line includes a capacitor formed of two pattern electrodes with at least one dielectric layer and no magnetic layers sandwiched there between and/or an inductor including a pattern conductor formed on a dielectric layer. The high-frequency device has an impedance to the high-frequency signal at the terminals.
Abstract translation: 高频器件包括:基板,其包括层叠在彼此顶部的多个层,并且包括电介质层和磁性层,端子,各自形成在一个层上的图案导体,以及每个延伸通过一层的通孔导体。 图案导体和通孔导体连接端子并形成发送高频信号的信号线。 信号线的第一部分包括延伸穿过一个磁性层的通孔导体和/或夹在两个磁性层之间的图案导体,并且具有对高频信号的预定电阻。 信号线的第二部分包括由具有至少一个电介质层的两个图案电极形成的电容器,并且不夹在其间的磁性层和/或包括形成在电介质层上的图案导体的电感器。 高频器件对端子处的高频信号具有阻抗。
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公开(公告)号:US20150333724A1
公开(公告)日:2015-11-19
申请号:US14278767
申请日:2014-05-15
Applicant: Saku Lahti , Mikko Lampinen , Mikko Komulainen
Inventor: Saku Lahti , Mikko Lampinen , Mikko Komulainen
Abstract: Described herein are architectures, platforms and methods for implementing an orientation-agnostic millimeter-wave (mm-wave) antenna in a portable device.
Abstract translation: 这里描述了用于在便携式设备中实现方位不确定毫米波(mm波)天线的架构,平台和方法。
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公开(公告)号:US20150155848A1
公开(公告)日:2015-06-04
申请号:US14619497
申请日:2015-02-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Hirokazu Yazaki
CPC classification number: H03H7/38 , H01P1/201 , H01P1/20345 , H01P1/22 , H03H7/06 , H03H7/24 , H03H2001/0085
Abstract: A high-frequency device includes a substrate including a plurality of layers that are stacked on top of one another and that include dielectric and magnetic layers, terminals, pattern conductors each formed on one layer, and via conductors each extending through one layer. The pattern conductors and via conductors connect the terminals and form a signal line that transmits a high-frequency signal. A first portion of the signal line includes a via conductor extending through one magnetic layer and/or a pattern conductor sandwiched between two magnetic layers and has a predetermined resistance to the high-frequency signal. A second portion of the signal line includes a capacitor formed of two pattern electrodes with at least one dielectric layer and no magnetic layers sandwiched there between and/or an inductor including a pattern conductor formed on a dielectric layer. The high-frequency device has an impedance to the high-frequency signal at the terminals.
Abstract translation: 高频器件包括:基板,其包括层叠在彼此顶部的多个层,并且包括电介质层和磁性层,端子,各自形成在一个层上的图案导体,以及每个延伸通过一层的通孔导体。 图案导体和通孔导体连接端子并形成发送高频信号的信号线。 信号线的第一部分包括延伸穿过一个磁性层的通孔导体和/或夹在两个磁性层之间的图案导体,并且具有对高频信号的预定电阻。 信号线的第二部分包括由具有至少一个电介质层的两个图案电极形成的电容器,并且不夹在其间的磁性层和/或包括形成在电介质层上的图案导体的电感器。 高频器件对端子处的高频信号具有阻抗。
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公开(公告)号:US08954125B2
公开(公告)日:2015-02-10
申请号:US13192597
申请日:2011-07-28
Applicant: Antonio D. Corcoles Gonzalez , Jiansong Gao , Dustin A. Hite , George A. Keefe , David P. Pappas , Mary E. Rothwell , Matthias Steffen , Chang C. Tsuei , Michael R. Vissers , David S. Wisbey
Inventor: Antonio D. Corcoles Gonzalez , Jiansong Gao , Dustin A. Hite , George A. Keefe , David P. Pappas , Mary E. Rothwell , Matthias Steffen , Chang C. Tsuei , Michael R. Vissers , David S. Wisbey
IPC: H01L39/14 , H01L39/24 , H01B12/06 , H01P1/203 , H01P3/00 , G06N99/00 , H01L39/22 , H01P1/201 , H01P3/02
CPC classification number: H01L39/2416 , B82Y10/00 , G06N99/002 , H01L27/18 , H01L39/12 , H01L39/14 , H01L39/223 , H01P1/201 , H01P1/2013 , H01P3/003 , H01P3/026
Abstract: Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes forming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer.
Abstract translation: 低损耗超导器件及制造低损耗超导器件的方法。 例如,超导器件(例如超导谐振器器件)由(200)取向的纹理氮化钛(TiN)层形成,以提供特别适合于应用于射频(RF)和/ 或微波超导谐振器,例如共面波导超导谐振器。 一方面,形成超导器件的方法包括在衬底上形成氮化硅(SiN)种子层,并在SiN籽晶层上形成(200)取向的织构氮化钛(TiN)层。
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公开(公告)号:US08836596B2
公开(公告)日:2014-09-16
申请号:US14156378
申请日:2014-01-15
Applicant: Cubic Corporation
Inventor: Wayne Edward Richards , Nathan Labadie
CPC classification number: H01Q15/24 , H01P1/201 , H01P1/20381 , H01P1/2088 , H01P11/00 , H01Q9/0407 , H01Q19/005 , H01Q21/0056 , Y10T29/49018
Abstract: A multi-pole filter antenna may include aperture-coupled non-dominant mode cavity resonators, and an aperture-coupled dominant mode patch antenna. The filter antenna may be implemented in a multilayer printed circuit board or similar structure. The filter antenna may for example operate in the Ku-Band, the Ka-Band, the C-Band, or another band.
Abstract translation: 多极滤波器天线可以包括孔耦合非主模式腔谐振器和孔耦合主模贴片天线。 滤波器天线可以以多层印刷电路板或类似结构实现。 滤波器天线可以例如在Ku波段,Ka波段,C波段或另一波段中操作。
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公开(公告)号:US20140198004A1
公开(公告)日:2014-07-17
申请号:US14156378
申请日:2014-01-15
Applicant: CUBIC CORPORATION
Inventor: Wayne Edward Richards , Nathan Labadie
CPC classification number: H01Q15/24 , H01P1/201 , H01P1/20381 , H01P1/2088 , H01P11/00 , H01Q9/0407 , H01Q19/005 , H01Q21/0056 , Y10T29/49018
Abstract: A multi-pole filter antenna may include aperture-coupled non-dominant mode cavity resonators, and an aperture-coupled dominant mode patch antenna. The filter antenna may be implemented in a multilayer printed circuit board or similar structure. The filter antenna may for example operate in the Ku-Band, the Ka-Band, the C-Band, or another band.
Abstract translation: 多极滤波器天线可以包括孔耦合非主模式谐振器和孔耦合主模贴片天线。 滤波器天线可以以多层印刷电路板或类似结构实现。 滤波器天线可以例如在Ku波段,Ka波段,C波段或另一波段中操作。
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公开(公告)号:US20110006856A1
公开(公告)日:2011-01-13
申请号:US12833195
申请日:2010-07-09
Applicant: Duk-Yong KIM , Nam-Shin Park
Inventor: Duk-Yong KIM , Nam-Shin Park
CPC classification number: H01P1/201 , H01P1/2086 , H01P7/105
Abstract: Various multi-mode resonant filters including a housing having a cavity, are provided. The multi-mode resonant filters include a Dielectric Resonant (DR) element received in the cavity of the housing, and a plurality of transmission lines for connecting a point on one of a first axis, a second axis, and a third axis with a point on another axis. The first axis, the second axis, and the third axis are orthogonal to each other with respect to a center of the DR element.
Abstract translation: 提供了包括具有空腔的壳体的各种多模谐振滤波器。 多模谐振滤波器包括容纳在壳体的空腔中的介电谐振元件(DR)元件,以及多个用于将第一轴,第二轴和第三轴之一上的点与点 在另一个轴上。 第一轴,第二轴和第三轴相对于DR元件的中心彼此正交。
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