公开(公告)号：USD669869S1

公开(公告)日：2012-10-30

申请号：US29406563

申请日：2011-11-16

Applicant: Chia-En Lee ,  Te-Ling Hsia ,  Wen-Fei Fong

Designer： Chia-En Lee ,  Te-Ling Hsia ,  Wen-Fei Fong

公开(公告)号：US08283188B2

公开(公告)日：2012-10-09

申请号：US13220693

申请日：2011-08-30

Applicant: Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

Inventor： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC: H01L21/00

CPC classification number: H01L33/387 ,  H01L33/382 ,  H01L33/44

Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Abstract translation: 提供一种制造发光二极管芯片的方法。 首先，在基板上形成半导体器件层。 之后，在半导体器件层的一部分上形成电流扩散层。 然后，在未被电流扩展层覆盖的半导体器件层的一部分上形成电流阻挡层和钝化层。 最后，在电流阻挡层和电流扩展层上形成第一电极。 此外，在半导体器件层上形成第二电极。

公开(公告)号：USD668235S1

公开(公告)日：2012-10-02

申请号：US29406690

申请日：2011-11-17

Applicant: Cheng-Ping Chang ,  Che-Ming Hsu ,  Hui-Kai Hsu

Designer： Cheng-Ping Chang ,  Che-Ming Hsu ,  Hui-Kai Hsu

公开(公告)号：US20120193663A1

公开(公告)日：2012-08-02

申请号：US13323327

申请日：2011-12-12

Applicant: Chia-En LEE

Inventor： Chia-En LEE

IPC: H01L33/60

CPC classification number: H01L33/60 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A fabrication method of a light-emitting diode including forming an epitaxial layer on a first substrate; forming a metal pad and a stress release ring on the epitaxial layer, wherein the stress release ring surrounds the metal pad; performing a substrate replacement process to transfer the epitaxial layer, the metal pad, and the stress release ring onto a second substrate, wherein the metal pad and the stress release ring are disposed between the epitaxial layer and the second substrate; patterning the epitaxial layer to expose a portion of the stress release ring; and removing the stress release ring to suspend a portion of the epitaxial layer. Moreover, a light emitting diode is provided.

Abstract translation: 一种发光二极管的制造方法，包括在第一基板上形成外延层; 在所述外延层上形成金属焊盘和应力释放环，其中所述应力释放环围绕所述金属焊盘; 执行衬底替换工艺以将外延层，金属焊盘和应力释放环转移到第二衬底上，其中金属焊盘和应力释放环设置在外延层和第二衬底之间; 图案化外延层以暴露一部分应力释放环; 以及去除所述应力释放环以悬浮所述外延层的一部分。 此外，提供了发光二极管。

公开(公告)号：USD664104S1

公开(公告)日：2012-07-24

申请号：US29398366

申请日：2011-07-29

Applicant: Chin-Chang Hsu

Designer： Chin-Chang Hsu

公开(公告)号：US20120022687A1

公开(公告)日：2012-01-26

申请号：US12943028

申请日：2010-11-10

Applicant: Ji-Huei Chen ,  Hsiang-Jung Chung

Inventor： Ji-Huei Chen ,  Hsiang-Jung Chung

IPC: H01L21/677 ,  G06F19/00

CPC classification number: H01L21/67271

Abstract: A method for transferring chips is provided for fixing one of the chips on a blue tape without sorting. A blue tape, a plurality of chips disposed thereon and a mapping data are provided, wherein the chips are disposed on the same blue tape, belong to the same wafer, and belong to a plurality of specifications. The specifications include a first specification and a second specification. The mapping data include the specifications the chips belonging to and the positions of the chips relative to the blue tape. According the mapping data, the chips belonging to the first specification are moved from the blue tape and fixed to a package carrier corresponding to the first specification. According the mapping data, the chips belonging to the second specification are moved from the blue tape and fixed to a package carrier corresponding to the second specification. A chip transferring apparatus is also provided.

Abstract translation: 提供了一种用于传送芯片的方法，用于将一个芯片固定在蓝色磁带上而不进行分类。 提供蓝带，设置在其上的多个芯片和映射数据，其中芯片设置在相同的蓝带上，属于相同的晶片，属于多个规格。 规格包括第一规格和第二规格。 映射数据包括属于芯片的芯片的规格和芯片相对于蓝色磁带的位置。 根据映射数据，属于第一规范的芯片从蓝带移动并固定到与第一规范对应的封装载体上。 根据映射数据，属于第二规格的芯片从蓝带移动并固定到对应于第二规范的封装载体上。 还提供了一种芯片传送装置。

公开(公告)号：US08101440B2

公开(公告)日：2012-01-24

申请号：US13220694

申请日：2011-08-30

Applicant: Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

Inventor： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC: H01L33/00

CPC classification number: H01L33/387 ,  H01L33/382 ,  H01L33/44

Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

公开(公告)号：US08043873B2

公开(公告)日：2011-10-25

申请号：US12398165

申请日：2009-03-04

Applicant: Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

Inventor： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC: H01L33/00

CPC classification number: H01L33/387 ,  H01L33/382 ,  H01L33/44

Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Abstract translation: 提供一种制造发光二极管芯片的方法。 首先，在基板上形成半导体器件层。 之后，在半导体器件层的一部分上形成电流扩散层。 然后，在未被电流扩展层覆盖的半导体器件层的一部分上形成电流阻挡层和钝化层。 最后，在电流阻挡层和电流扩展层上形成第一电极。 此外，在半导体器件层上形成第二电极。

公开(公告)号：US20110241064A1

公开(公告)日：2011-10-06

申请号：US13159430

申请日：2011-06-14

Applicant: Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

Inventor： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC: H01L33/36

CPC classification number: H01L33/145 ,  H01L33/387

Abstract: A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.

Abstract translation: 提供了包括衬底，半导体器件层，电流阻挡层，电流扩散层，第一电极和第二电极的LED芯片。 半导体器件层设置在基板上。 电流阻挡层设置在半导体器件层的一部分上，并且包括电流阻挡段和电流分布调节段。 电流扩展层设置在半导体器件层的一部分上并覆盖电流阻挡层。 第一电极设置在电流扩展层上，其中电流阻挡段的一部分与第一电极重叠。 当前阻挡段和第一电极的轮廓是相似的图。 第一个电极的等高线并且在当前阻挡段的轮廓内。 电流分布调节段不与第一电极重叠。

公开(公告)号：US08030674B2

公开(公告)日：2011-10-04

申请号：US12164114

申请日：2008-06-30

Applicant: Chin-Chang Hsu ,  Wen-Lung Su

Inventor： Chin-Chang Hsu ,  Wen-Lung Su

IPC: H01L33/00 ,  H01L23/495

CPC classification number: H01L33/60 ,  H01L25/167 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/85385 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/3025 ,  H01L2933/0091 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An LED package including a lead-frame, at least an LED chip and an encapsulant is provided. The lead-frame has a roughened surface, the LED chip is disposed on the lead-frame and electrically connected to the lead-frame, and the roughened surface is suitable to scatter the light emitted from the LED chip. In addition, the encapsulant encapsulates the LED chip and a part of the lead-frame, and the rest part of the lead-frame is exposed out of the encapsulant.

Abstract translation: 提供了包括引线框架，至少LED芯片和密封剂的LED封装。 引线框架具有粗糙表面，LED芯片设置在引线框架上并电连接到引线框架，并且粗糙表面适于散射从LED芯片发射的光。 此外，密封剂封装LED芯片和引线框架的一部分，引线框架的其余部分从密封剂中露出。