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公开(公告)号：US20220078956A1
公开(公告)日：2022-03-10
申请号：US17423182
申请日：2020-01-13
发明人： Ronny Simon
摘要： In an embodiment a storage device includes a base carrier extending along a main surface having a surface structuring, a carrier foil including a first main surface and a second main surface, wherein the first main surface is fixable to or arrangeable on the main surface of the base carrier, and wherein the components are fixable to the second main surface and a fixing frame fixing the carrier foil, which is fixed or positioned to the main surface of the base carrier, to the base carrier and acting as a releasable clamp so that the carrier foil is clampable and securable in or to the base carrier.
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公开(公告)号：US20220077369A1
公开(公告)日：2022-03-10
申请号：US17432429
申请日：2020-02-13
摘要： In an embodiment an optoelectronic component includes a first joining partner including an LED chip with a structured light-emitting surface and a compensation layer applied to the light-emitting surface, wherein the compensation layer has a surface facing away from the light-emitting surface and spaced apart from the light-emitting surface, and wherein the surface forms a first connecting surface, a second joining partner having a second connecting surface, the first and second connecting surfaces being arranged such that they face each other and a bonding layer made of a film of low-melting glass having a layer thickness of not more than 1 μm, wherein the bonding layer bonds the first and second connecting surfaces together, wherein the structure of the light-emitting surface is embedded in the compensation layer, and wherein the first and second connecting surfaces are smooth such that their surface roughness, expressed as center-line roughness, is less than or equal to 50 nm.
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公开(公告)号：US11271140B2
公开(公告)日：2022-03-08
申请号：US16498291
申请日：2018-03-20
发明人： Siegfried Herrmann
摘要： A method for manufacturing a plurality of surface mounted optoelectronic devices and a surface mounted optoelectronic device are disclosed. In an embodiment, a surface mounted optoelectronic device includes a transparent base body having a mounting rear side, a radiation exit side opposite the mounting rear side, and mounting side surfaces which are each disposed transversely to the radiation exit side, a semiconductor layer sequence disposed laterally to at least one mounting side surface and a terminal contact extending from the at least one mounting side surface to the mounting rear side, wherein the semiconductor layer sequence includes an active region configured to emit radiation so that the radiation decouples from the surface mounted optoelectronic device via the radiation exit side of the base body.
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94.发明申请公开(公告)号：US20220059985A1
公开(公告)日：2022-02-24
申请号：US17421195
申请日：2020-01-08
发明人： Bruno Jentzsch , Alexander Tonkikh
摘要： The invention relates to a radiation-emitting semiconductor chip comprising a semiconductor layer sequence having at least two active regions which generate electromagnetic radiation during operation and at least one reflective outer surface which is arranged to the side of each active region wherein the reflective outer surface includes an angle of at least 35° and at most 55° with a main extension plane of the semiconductor chip. The invention also relates to a method for producing a radiation-emitting semiconductor chip.
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公开(公告)号：US20220028843A1
公开(公告)日：2022-01-27
申请号：US17299955
申请日：2019-12-05
发明人： Claus Jaeger
IPC分类号： H01L25/16 , H01L25/075 , H01L25/04 , H01L31/0232 , H01L33/60 , H01L31/0203 , H01L33/48
摘要： In an embodiment, an optoelectronic device includes a carrier, at least one optoelectronic semiconductor component arranged on an upper side of the carrier and at least one light channel associated with the optoelectronic semiconductor component which extends between a first end of the light channel which is distant from a light-active surface of the semiconductor component and which includes an opening into the outer space and a second end of the light channel including an opening directed towards the light-active surface of the semiconductor component, wherein the at least one light channel extends between its respective first and second ends in a non-rectilinear manner, wherein the light channel includes a cavity extending between the two ends, wherein an inner wall surrounds the cavity, and wherein at least a section of the inner wall is reflective.
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96.发明申请公开(公告)号：US20220020731A1
公开(公告)日：2022-01-20
申请号：US17311862
申请日：2019-12-20
发明人： Matthias Hien , Sebastian Stigler
IPC分类号： H01L25/075 , H01L33/58 , H01L33/00
摘要： In an embodiment an optoelectronic lighting device includes a support and at least one pixel having three illuminating elements, wherein the illuminating elements of the pixel are arranged on an upper side of the support, each illuminating element having a center point, wherein the illuminating elements are arranged around a central point lying on the upper side of the support such that the center points of the illuminating elements lie on a circular path with a defined radius revolving around the central point, wherein each illuminating element includes a base body with a quadrangular base surface, a corner of the base body of each illuminating element lying at least approximately on a line which extends between the center point of the respective illuminating element and the central point, and/or wherein each illuminating element includes a base body with a square base surface, the illuminating elements being arranged on the upper side of the support such that mutually opposite side surfaces of the base body of adjacent illuminating elements extend non-parallel to one another.
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97.发明申请公开(公告)号：US20220013700A1
公开(公告)日：2022-01-13
申请号：US17296149
申请日：2019-12-04
发明人： Pascal Porten , Mathias Kämpf , Marcus Zenger
IPC分类号： H01L33/62 , H01L33/48 , H01L33/00 , H01L25/075
摘要： In one embodiment, a method includes providing a chip carrier, creating holes for electrical through-connections in the chip carrier, producing a thin metallization in the holes, filling the metallized holes with a filling of a plastic, and applying optoelectronic semiconductor chips on the metallized holes so that the semiconductor chips are ohmically conductively connected with an associated metallization, wherein a mean thickness of the metallization in the holes is between 0.1 μm and 0.7 μm, inclusive, and wherein a diameter of the holes exceeds the mean thickness of the metallization by at least a factor of 10.
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公开(公告)号：US20220005981A1
公开(公告)日：2022-01-06
申请号：US17285724
申请日：2019-10-10
发明人： Martin Brandl , Zeljko Pajkic , Dominik Schulten
IPC分类号： H01L33/48 , H01L23/544 , H01L23/31 , H01L33/50 , H01L33/10
摘要： A method of manufacturing optoelectronic components includes providing a plurality of optoelectronic semiconductor chips embedded in a carrier layer, wherein a conversion layer is applied to the optoelectronic semiconductor chips and the carrier layer, creating markings in and/or on the conversion layer, and severing the carrier layer to obtain optoelectronic devices, the optoelectronic devices each having at least one of the markings, wherein the at least one marking is at least one recess in the conversion layer.
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公开(公告)号：US20220002620A1
公开(公告)日：2022-01-06
申请号：US17292360
申请日：2019-11-13
发明人： Jörg FRISCHEISEN , Nusret Sena GUELDAL , Angela EBERHARDT , Vesna MUELLER , Florian PESKOLLER , Pascal RABENBAUER , Thomas HUCKENBECK , Jürgen BAUER
摘要： The invention relates to a conversion element comprising a wavelength-converting conversion material, a matrix material in which the conversion material is inserted, and a substrate on which the matrix material and the conversion material are directly arranged, the matrix material comprising at least one condensed sol-gel material selected from the following group: water glass, metal phosphate, aluminium phosphate, monoaluminium phosphate, modified monoaluminium phosphate, alkoxytetramethoxysilane, tetraethyl orthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane or metal alkoxane, the conversion element being arranged in the beam path of a laser source, the conversion element being mounted in a mechanically immobile manner in relation to the laser source, and the radiation of the laser source being dynamically arranged in relation to the conversion element.
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100.发明申请公开(公告)号：US20210408351A1
公开(公告)日：2021-12-30
申请号：US17293049
申请日：2019-11-14
发明人： Ivar Tangring , Berthold Hahn
IPC分类号： H01L33/64
摘要： An optoelectronic semiconductor component having an optoelectronic semiconductor chip for emitting electromagnetic radiation. The optoelectronic semiconductor chip may have a first semiconductor layer, a second semiconductor layer, first and second current spreading layers, electrical connection elements and first connection regions. The first current spreading layer is arranged on a side of the first semiconductor layer facing away from the second semiconductor layer. The first current spreading layer is electrically connected to the first semiconductor layer. The electrical connection elements electrically connect the second semiconductor layer to the second current spreading layer. The first connection regions are connected to the first current spreading layer and extend through the second current spreading layer. An area coverage of the first connection regions in a region between adjacent parts of the second current spreading layer is greater than 20% of the area coverage of the second current spreading layer.
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