公开(公告)号：US12034098B2

公开(公告)日：2024-07-09

申请号：US17279632

申请日：2019-09-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Leber ,  Siegfried Herrmann ,  Christine Rafael

IPC: H01L33/36 ,  H01L33/38 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: An optoelectronic device includes an optoelectronic semiconductor chip having a first and a second semiconductor layer having a first and second conductivity type, respectively; a first and a second current spreading layer; a dielectric reflective layer; and a plurality of first electrical connecting elements. The first semiconductor layer and the second semiconductor layer are stacked. The first current spreading layer and the second current spreading layer are arranged on a side of the first semiconductor layer facing away from the second semiconductor layer. The dielectric reflective layer is arranged between the first semiconductor layer and the first current spreading layer. The plurality of first electrical connecting elements extends through the dielectric reflective layer and is suitable to electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer is electrically connected to the second semiconductor layer.

公开(公告)号：US11069663B2

公开(公告)日：2021-07-20

申请号：US16468085

申请日：2018-01-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plößl ,  Siegfried Herrmann ,  Martin Rudolf Behringer ,  Frank Singer ,  Thomas Schwarz ,  Alexander F. Pfeuffer

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/00

Abstract: A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.

公开(公告)号：US10991845B2

公开(公告)日：2021-04-27

申请号：US15940929

申请日：2018-03-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plößl ,  Siegfried Herrmann ,  Martin Rudolf Behringer ,  Frank Singer ,  Thomas Schwarz

IPC: H01L33/00 ,  H01L33/48 ,  H01L25/075

Abstract: A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the method include A) providing at least two source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chip; B) providing a target substrate having a mounting plane, the mounting plane being configured for mounting the semiconductor chip; and C) transferring at least part of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips, within one type, maintain their relative position with respect to one another, so that each type of semiconductor chips arranged on the target substrate has a different height above the mounting plane, wherein the semiconductor chips are at least one of at least partially stacked one above the other or at least partially applied to at least one casting layer.

公开(公告)号：US20190333898A1

公开(公告)日：2019-10-31

申请号：US16468085

申请日：2018-01-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plößl ,  Siegfried Herrmann ,  Martin Rudolf Behringer ,  Frank Singer ,  Thomas Schwarz ,  Alexander F. Pfeuffer

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/62

Abstract: A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.

公开(公告)号：US20190172972A1

公开(公告)日：2019-06-06

申请号：US16309995

申请日：2017-05-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/52

Abstract: In an embodiment, a method for producing a plurality of optoelectronic semiconductor components is disclosed, wherein the method includes inserting a plurality of optoelectronic semiconductor chips with a suitable orientation into a linear feeding device, conveying the optoelectronic semiconductor chips to an injection device having an outlet opening, encapsulating the optoelectronic semiconductor chips with at least one cladding layer in the injection device and pressing the encapsulated optoelectronic semiconductor chips out of the outlet opening, wherein a compound of optoelectronic semiconductor chips is formed in which the optoelectronic semiconductor chips are connected to one another by the at least one cladding layer and separating the compound into a plurality of optoelectronic semiconductor components each component having an optoelectronic semiconductor chip which is at least partially encapsulated by the at least one cladding layer.

公开(公告)号：US09780265B2

公开(公告)日：2017-10-03

申请号：US15117177

申请日：2015-01-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann ,  Juergen Moosburger ,  Stefan Illek ,  Frank Singer ,  Norwin Von Malm

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/40 ,  H01L25/075 ,  H01L33/10 ,  H01L33/46

CPC classification number: H01L33/505 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/405 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The invention relates to an optoelectronic semiconductor component (1) comprising:—an optoelectronic semiconductor chip (2), comprising—a growth substrate (21) having a growth surface (21a),—a layer sequence (22) with a semiconductor layer sequence (221, 222, 223) with an active zone (222) grown on the growth surface (21a),—contact points (29) for electrically contacting the semiconductor layer sequence (221, 222, 223) and—and insulation layer (26), which is formed in an electrically insulting manner—a connection carrier (4), which is mounted to the cover surface (2a) of the optoelectronic semiconductor chip facing away from the growth surface (21a), wherein—the semiconductor layer sequence (221, 222, 223) is connected to the connection carrier (4) in an electrically conducting manner and—a conversion layer (5) is applied to a bottom surface (21c) of the growth substrate (21) facing away from the growth surface (21a) and to all side surfaces (21b) of the growth substrate (21).

公开(公告)号：US09543479B2

公开(公告)日：2017-01-10

申请号：US14380688

申请日：2013-02-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann

IPC: H01L23/495 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L33/483 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2924/00

Abstract: A semiconductor chip without a substrate is provided on an electrically insulating carrier. The carrier has electrically conductive contact metallizations. Furthermore, an electrically conductive carrier substrate and a covering substrate are provided. The covering substrate has electrically conductive contact structures. The carrier is attached to the carrier substrate. Subsequently, the covering substrate is attached to the semiconductor chip and/or to the carrier. The electrically conductive contact structures are connected in an electrically conductive manner to the electrically conductive contact metallizations and the electrically conductive carrier substrate.

Abstract translation: 没有基板的半导体芯片设置在电绝缘载体上。 载体具有导电接触金属化。 此外，提供导电载体基板和覆盖基板。 覆盖基板具有导电接触结构。 载体附着到载体基底上。 随后，将覆盖基板附着到半导体芯片和/或载体上。 导电接触结构以导电方式连接到导电接触金属化层和导电载体基底。

公开(公告)号：US09537063B2

公开(公告)日：2017-01-03

申请号：US14418860

申请日：2013-07-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann ,  Wolfgang Moench

IPC: H01L33/00 ,  H01L21/00 ,  H01L33/50 ,  H01L21/66

CPC classification number: H01L33/505 ,  H01L22/10 ,  H01L22/12 ,  H01L22/26 ,  H01L33/0095 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

Abstract: A method for producing a plurality of optoelectronic components (100) comprises the steps: providing a semiconductor body (101) that is arranged on a carrier (114); and applying a converter material (105) to the semiconductor body (101) by means of a photoconductive transfer element (120).

Abstract translation: 一种用于制造多个光电子部件（100）的方法包括以下步骤：提供布置在载体（114）上的半导体本体（101）; 以及通过光电导转移元件（120）将转换器材料（105）施加到半导体本体（101）。

公开(公告)号：US20140319547A1

公开(公告)日：2014-10-30

申请号：US14364099

申请日：2012-11-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Patrick Rode ,  Lutz Hoeppel ,  Norwin von Malm ,  Stefan Illek ,  Albrecht Kieslich ,  Siegfried Herrmann

IPC: H01L31/18 ,  H01L33/00

CPC classification number: H01L31/1876 ,  H01L33/005 ,  H01L33/36 ,  H01L33/382 ,  H01L2933/0016

Abstract: A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of recesses extending from the principal plane in a direction of the active region are formed in the layer composite assembly; b) forming a planarization layer on the principal plane such that the recesses are at least partly filled with material of the planarization layer; c) at least regionally removing material of the planarization layer to level the planarization layer; and d) completing the semiconductor chips, wherein for each semiconductor chip at least one semiconductor body emerges from the semiconductor layer sequence.

Abstract translation: 一种制造多个光电子半导体芯片的方法包括：a）提供具有在垂直方向上限定层复合组件的主平面的层复合组件，并且包括具有产生和/或检测辐射的有源区的半导体层序列 其特征在于，在所述层复合组件中形成有从所述主面向所述有源区的方向延伸的多个凹部， b）在所述主平面上形成平坦化层，使得所述凹部至少部分地被所述平坦化层的材料填充; c）至少在区域上去除平坦化层的材料以平整平坦化层; 以及d）完成半导体芯片，其中对于每个半导体芯片，至少一个半导体体从半导体层序列中排出。

公开(公告)号：US12199134B2

公开(公告)日：2025-01-14

申请号：US17515338

申请日：2021-10-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Behringer ,  Andreas Biebersdorf ,  Ruth Boss ,  Erwin Lang ,  Tobias Meyer ,  Alexander Pfeuffer ,  Marc Philippens ,  Julia Stolz ,  Tansen Varghese ,  Sebastian Wittmann ,  Siegfried Herrmann ,  Berthold Hahn ,  Bruno Jentzsch ,  Korbinian Perzlmaier ,  Peter Stauss ,  Petrus Sundgren ,  Jens Mueller ,  Kerstin Neveling ,  Frank Singer ,  Christian Mueller

IPC: H01L27/15 ,  H01L33/10 ,  H01L33/58

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.