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    N-Dopant for Carbon Nanotubes and Graphene
    94.
    发明申请
    N-Dopant for Carbon Nanotubes and Graphene 有权
    碳纳米管和石墨烯的N掺杂剂

    公开(公告)号：US20130143356A1

    公开(公告)日：2013-06-06

    申请号：US13308974

    申请日：2011-12-01

    Applicant: Ali Afzali-Ardakani ,  Bhupesh Chandra ,  George S. Tulevski

    Inventor： Ali Afzali-Ardakani ,  Bhupesh Chandra ,  George S. Tulevski

    IPC: H01L51/40 ,  B82Y99/00

    CPC classification number: H01L51/0558 ,  B82Y10/00 ,  B82Y40/00 ,  H01L51/0018 ,  H01L51/002 ,  H01L51/0048 ,  H01L51/0072 ,  H01L51/055 ,  Y10S977/846 ,  Y10S977/938

    Abstract: A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene to produce a stable n-doped nano-component, wherein dihydrotetraazapentacene is represented by the formula: wherein in the dihydrotetraazapentacene chemical structure, each of R1, R2, R3, and R4 can be hydrogen, an alkyl group of C1 to C16 carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group or a carboxylic ester group.

    Abstract translation: 用于形成具有稳定的n掺杂纳米组分的场效应晶体管的组合物和方法。 该方法包括在栅极上形成栅极电介质，在栅极电介质上形成包含纳米成分的沟道，在纳米元件的第一区域上形成源极，在纳米元件的第二区域上形成漏极， 形成场效应晶体管，并且将场效应晶体管的纳米组分的一部分暴露于二氢四氮杂萘以产生稳定的n掺杂纳米组分，其中二氢四氮杂芳烃由下式表示：其中在二氢四氮杂碳酸化学结构中， R1，R2，R3和R4可以是氢，C1〜C16碳的烷基，烷氧基，烷硫基，三烷基硅烷基，羟甲基，羧酸基或羧酸酯基。

    SELECTIVE PLACEMENT OF CARBON NANOTUBES VIA COULOMBIC ATTRACTION OF OPPOSITELY CHARGED CARBON NANOTUBES AND SELF-ASSEMBLED MONOLAYERS
    95.
    发明申请
    SELECTIVE PLACEMENT OF CARBON NANOTUBES VIA COULOMBIC ATTRACTION OF OPPOSITELY CHARGED CARBON NANOTUBES AND SELF-ASSEMBLED MONOLAYERS 有权
    碳纳米管的选择性放置通过非对称吸收碳纳米管和自组装单体的碳纳米管

    公开(公告)号：US20130082233A1

    公开(公告)日：2013-04-04

    申请号：US13248176

    申请日：2011-09-29

    Applicant: Ali Afzali-Ardakani ,  Hongsik Park ,  George Stojan Tulevski

    Inventor： Ali Afzali-Ardakani ,  Hongsik Park ,  George Stojan Tulevski

    IPC: H01L29/06 ,  H01L21/20 ,  C07D213/76 ,  B82Y40/00 ,  B82Y99/00

    CPC classification number: C07D213/79 ,  B82Y10/00 ,  B82Y40/00 ,  C07D213/76 ,  H01L29/0676 ,  H01L51/0003 ,  H01L51/0048 ,  H01L51/0049 ,  H01L51/0558

    Abstract: A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.

    Abstract translation: 形成具有选择性放置的碳纳米管的结构的方法，制造带电碳纳米管的方法，双功能前体和具有最小捆扎的具有高密度碳纳米管层的结构。 碳纳米管选择性地放置在具有两个区域的基板上。 第一区域的等电点超过第二区域的等电点。 将基底浸入具有锚定和带电末端的双功能前体的溶液中。 锚定端连接到第一区域以形成具有带电端的自组装单层。 将具有带电单层的衬底浸入具有相反电荷的碳纳米管的溶液中，以在自组装单层上形成碳纳米管层。 带电的碳纳米管通过官能化或用离子表面活性剂涂覆制成。

    EMBEDDING A NANOTUBE INSIDE A NANOPORE FOR DNA TRANSLOCATION
    96.
    发明申请
    EMBEDDING A NANOTUBE INSIDE A NANOPORE FOR DNA TRANSLOCATION 有权
    嵌入一​​个NANOTUBE内部的NANOPORE进行DNA转录

    公开(公告)号：US20130062206A1

    公开(公告)日：2013-03-14

    申请号：US13611701

    申请日：2012-09-12

    Applicant: Ali Afzali-Ardakani ,  Binquan Luan ,  Hongbo Peng

    Inventor： Ali Afzali-Ardakani ,  Binquan Luan ,  Hongbo Peng

    IPC: C25D15/00 ,  B82Y40/00

    CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C12Q1/6869 ,  C25D3/665 ,  C25D5/028 ,  C25D13/04 ,  G01N33/48721

    Abstract: A technique for embedding a nanotube in a nanopore is provided. A membrane separates a reservoir into a first reservoir part and a second reservoir part, and the nanopore is formed through the membrane for connecting the first and second reservoir parts. An ionic fluid fills the nanopore, the first reservoir part, and the second reservoir part. A first electrode is dipped in the first reservoir part, and a second electrode is dipped in the second reservoir part. Driving the nanotube into the nanopore causes an inner surface of the nanopore to form a covalent bond to an outer surface of the nanotube via an organic coating so that the inner surface of the nanotube will be the new nanopore with a super smooth surface for studying bio-molecules while they translocate through the nanotube.

    Abstract translation: 提供了一种在纳米孔中嵌入纳米管的技术。 膜将储存器分离成第一储存部分和第二储存部分，并且纳米孔通过膜形成，用于连接第一和第二储存部分。 离子流体填充纳米孔，第一储存部分和第二储存部分。 将第一电极浸入第一储存部分中，将第二电极浸入第二储存部分。 将纳米管驱动到纳米孔中导致纳米孔的内表面通过有机涂层与纳米管的外表面形成共价键，使得纳米管的内表面将成为具有超光滑表面的新纳米孔，用于研究生物 分子，同时它们转移通过纳米管。

    Patterned doping of semiconductor substrates using photosensitive monolayers
    98.
    发明授权
    Patterned doping of semiconductor substrates using photosensitive monolayers 失效

    公开(公告)号：US08354333B2

    公开(公告)日：2013-01-15

    申请号：US12699552

    申请日：2010-02-03

    Applicant: Ali Afzali-Ardakani ,  Devendra K. Sadana ,  Lidija Sekaric

    Inventor： Ali Afzali-Ardakani ,  Devendra K. Sadana ,  Lidija Sekaric

    IPC: H01L21/22 ,  H01L21/38

    CPC classification number: H01L21/228 ,  H01L21/22 ,  H01L29/06

    Abstract: A semiconductor device and a method of fabricating a semiconductor device are disclosed. Embodiments of the invention use a photosensitive self-assembled monolayer to pattern the surface of a substrate into hydrophilic and hydrophobic regions, and an aqueous (or alcohol) solution of a dopant compound is deposited on the substrate surface. The dopant compound only adheres on the hydrophilic regions. After deposition, the substrate is coated with a very thin layer of oxide to cap the compounds, and the substrate is annealed at high temperatures to diffuse the dopant atoms into the silicon and to activate the dopant. In one embodiment, the method comprises providing a semiconductor substrate including an oxide surface, patterning said surface into hydrophobic and hydrophilic regions, depositing a compound including a dopant on the substrate, wherein the dopant adheres to the hydrophilic region, and diffusing the dopant into the oxide surface of the substrate.

    PATTERNED DOPING OF SEMICONDUCTOR SUBSTRATES USING PHOTOSENSITIVE MONOLAYERS
    99.
    发明申请
    PATTERNED DOPING OF SEMICONDUCTOR SUBSTRATES USING PHOTOSENSITIVE MONOLAYERS 失效
    使用光敏单体的半导体基板的图案化

    公开(公告)号：US20120273925A1

    公开(公告)日：2012-11-01

    申请号：US13541857

    申请日：2012-07-05

    Applicant: Ali Afzali-Ardakani ,  Devendra K. Sadana ,  Lidija Sekaric

    Inventor： Ali Afzali-Ardakani ,  Devendra K. Sadana ,  Lidija Sekaric

    IPC: H01L29/06

    CPC classification number: H01L21/228 ,  H01L21/22 ,  H01L29/06

    Abstract: A semiconductor device and a method of fabricating a semiconductor device are disclosed. Embodiments of the invention use a photosensitive self-assembled monolayer to pattern the surface of a substrate into hydrophilic and hydrophobic regions, and an aqueous (or alcohol) solution of a dopant compound is deposited on the substrate surface. The dopant compound only adheres on the hydrophilic regions. After deposition, the substrate is coated with a very thin layer of oxide to cap the compounds, and the substrate is annealed at high temperatures to diffuse the dopant atoms into the silicon and to activate the dopant. In one embodiment, the method comprises providing a semiconductor substrate including an oxide surface, patterning said surface into hydrophobic and hydrophilic regions, depositing a compound including a dopant on the substrate, wherein the dopant adheres to the hydrophilic region, and diffusing the dopant into the oxide surface of the substrate.

    Abstract translation: 公开了半导体器件和制造半导体器件的方法。 本发明的实施方案使用光敏自组装单层将基材的表面图案化成亲水和疏水区域，并且掺杂剂化合物的水溶液（或醇）沉积在基材表面上。 掺杂剂仅粘附在亲水区上。 在沉积之后，用非常薄的氧化层涂覆衬底以封盖化合物，并且衬底在高温下退火以将掺杂剂原子扩散到硅中并激活掺杂剂。 在一个实施例中，该方法包括提供包括氧化物表面的半导体衬底，将所述表面图案化成疏水和亲水区域，在衬底上沉积包括掺杂剂的化合物，其中掺杂剂粘附到亲水区域，并将掺杂剂扩散到 氧化物表面。

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