Abstract:
A de-coupling capacitor module using dummy conductive elements in an integrated circuit is disclosed. The de-coupling module comprises at least one circuit module having one or more active nodes, and at least one dummy conductive element unconnected to any active node, and separated from a high voltage conductor or a low voltage conductor by an insulation region to provide a de-coupling capacitance.
Abstract:
A PMOS device less affected by negative bias time instability (NBTI) and a method for forming the same are provided. The PMOS device includes a barrier layer over at least a portion of a gate structure, a gate spacer, and source/drain regions of a PMOS device. A stressed layer is then formed over the barrier layer. The barrier layer is preferably an oxide layer and is preferably not formed for NMOS devices.
Abstract:
A computer system with vertically offset hard disk drives has a space in one side for containing the two vertically offset hard disk drives held by a mobile rack in a vertically offset manner. The mobile rack fixes the two hard disk drives with two vertically offset screw sets. A holding frame in the space of the computer system has two vertically offset connectors that allow the two hard disk drives to be connected at the same time when the mobile rack is completely inserted into the holding frame.
Abstract:
A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.
Abstract:
An ignition coil. The ignition coil includes a casing, a bobbin, and a core. The bobbin includes a body, a primary coil surrounding the body, a secondary coil surrounding the body, a plurality of first terminals embedded in the body, and two secondary coils embedded in the body. The bobbin is disposed inside the casing. The primary coil is connected to the second terminal, and the secondary coil is connected to the first terminal. Each first terminal is abutted by the body and the casing respectively so that each first terminal is maintained in a predetermined position on the body. The core is disposed inside the bobbin.
Abstract:
A system for characterizing color is provided. The system includes a color patch identification system that receives image data, such as image data of a color wedge, and generates color patch data, such as for two or more patches that make up the color wedge. A color patch characterization system receives the color patch data and generates color density data, such as by calculating the average color density of each color patch.
Abstract:
A method for controlling printer color is provided. The method includes receiving cartridge color density data, such as from analysis of a test patch printed by the cartridge, and reference cartridge data, such as from analysis of a test patch printed and measured in accordance with a color standard. The color density data of the cartridge test patch is then mapped to the color density data of the reference cartridge test patch to generate mapped color density data, such as a look-up table that provides a dot activation for the cartridge that generates the same color density for a known dot activation for the reference cartridge. The mapped color density data is then used to control color density for printing a set of image data.
Abstract:
A method for manufacturing a metal plug is described. A substrate with an opening is provided. Then, a barrier layer is formed on a surface of the opening. Thereafter, a metallic layer is formed over the substrate so that the opening is also filled. Next, a planarization process is performed to remove the metallic layer outside the opening. One main feature of the present invention is the performance of at least a high temperature treatment after the metallic layer is formed. Due to the high temperature treatment, internal stress between different layers is released.
Abstract:
A color compensation system for a display including least one display panel and a light source is provided. The system includes a memory, a modulator and a controller. The memory stores a number of sets of gamma look up tables (LUTs) consisting of a color data. The modulator is electrically connected with the memory and the display panel. The controller is electrically connected with the memory and the light source. When the light source is turned on, the controller counts the use time of the light source. When the use time reaches a first predetermined value, the controller selects one of the sets of gamma look up tables (LUTs) in the memory and provides the color data of the set of gamma look up table to the modulator, and the modulator provides a driving voltage to the display panel by using the color data.
Abstract:
A method of forming multiple gate oxide thicknesses on active areas that are separated by STI isolation regions on a substrate. A first layer of oxide is grown to a thickness of about 50 Angstroms and selected regions are then removed. A second layer of oxide is grown that is thinner than first growth oxide. For three different gate oxide thicknesses, selected second oxide growth regions are nitridated with a N2 plasma which increases the dielectric constant of a gate oxide and reduces the effective oxide thickness. To achieve four different gate oxide thicknesses, nitridation is performed on selected first growth oxides and on selected second growth oxide regions. Nitridation of gate oxides also prevents impurity dopants from migrating across the gate oxide layer and reduces leakage of standby current. The method also reduces corner loss of STI regions caused by HF etchant.