Abstract:
A negative photoresist composition and a method of manufacturing an array substrate. The negative photoresist composition includes a photocurable composition including an ethylene unsaturated compound containing an ethylene unsaturated bond and a photopolymerization initiator, a thermosetting composition including an alkali-soluble resin crosslinked by heat and an organic solvent. The negative photoresist composition improves stability, photosensitivity, detachability after performing a developing operation and reduces residue to improve the reliability of an organic insulation layer. Furthermore, the negative photoresist composition improves the transmittance of an organic insulation layer and reduces the variation of color coordinates to improve the display quality of a display apparatus.
Abstract:
A photoresist composition is provided. The photoresist composition includes an alkali-soluble resin; a photosensitizer containing a first compound that contains a diazonaphthoquinone represented by Formula 1 and a second compound that contains a diazonaphthoquinone represented by Formula 2; and a solvent. andR1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.
Abstract translation:提供光致抗蚀剂组合物。 光致抗蚀剂组合物包括碱溶性树脂; 含有含有由式1表示的重氮萘醌的第一化合物和含有由式2表示的重氮萘醌的第二化合物的光敏剂; 和溶剂。 R 1选自氢原子,碳原子数1〜4的烷基,碳原子数2〜4的烯基,碳原子数3〜8的环烷基,碳原子数6〜12的芳基, 并且R 2选自Cl,F,Br和I.
Abstract:
A thin film transistor array panel for a flat panel display includes a substrate, a first signal line formed on the substrate, a second signal line intersecting and insulated from the first signal line, a switching element having a first terminal connected to the first signal line, a second terminal connected to the second signal line, and a third terminal, a pixel electrode connected to the third terminal of the switching element, and first and second light blocking members extending parallel to the second signal line, each being disposed on an opposite side of and partially overlapping an respective edge of the second signal line, an interval between the first and second light blocking members being in a range of from more than 1.5 μm to less than 4 μm. The array panel prevents light leakage from the display and improves its transmittance, aperture ratio and color reproducibility.
Abstract:
A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.
Abstract:
A thin film transistor array panel for a flat panel display includes a substrate, a first signal line formed on the substrate, a second signal line intersecting and insulated from the first signal line, a switching element having a first terminal connected to the first signal line, a second terminal connected to the second signal line, and a third terminal, a pixel electrode connected to the third terminal of the switching element, and first and second light blocking members extending parallel to the second signal line, each being disposed on an opposite side of and partially overlapping an respective edge of the second signal line, an interval between the first and second light blocking members being in a range of from more than 1.5 μm to less than 4 μm. The array panel prevents light leakage from the display and improves its transmittance, aperture ratio and color reproducibility.
Abstract:
Example embodiments are directed to a maskless exposure apparatus that generates and/or corrects exposure data using at least one information of intensity information, central position information, focus information, and/or shape information of a plurality of beams acquired using a measurement optical system, and a control method thereof. The maskless exposure apparatus includes the measurement optical system including a photo sensor and an image sensor, and a control unit configured to generate and/or correct the exposure data using the information acquired by the measurement optical system.
Abstract:
A halftone mask includes a transparent substrate, a light-blocking layer, a first semi-transparent layer and a second semi-transparent layer. The transparent substrate includes a light-blocking area, a light-transmitting area, a first halftone area transmitting first light, and a second halftone area transmitting second light that is less than the first light. The light-blocking layer is formed in the light-blocking area to fully block light from being transmitted. The first and second semi-transparent layers are formed on the transparent substrate. At least one of the first and second semi-transparent layers is formed in the first halftone area, and the first and second semi-transparent layers are overlapped with each other on the second halftone area.
Abstract:
A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent:
Abstract:
An organic composition having liquid-crystal alignment characteristics includes a photosensitive compound and a binder resin represented by Formula 1 below: wherein each R1 is independently hydrogen or a methyl group; R2 is an alkyl group of 4-16 carbon atoms; R3 is an alkyl group of 1-7 carbon atoms, a cyclooxyalkyl group of 1-7 carbon atoms, a benzyl group, or a phenyl group; l, m, and n represent molar ratios of polymerization units and are respectively from about 0.01 to about 0.50, from about 0.10 to about 0.60, and from about 0.03 to about 0.50.
Abstract:
A display substrate includes a gate wiring, a data wiring, a switching element, an organic layer, and a pixel electrode. The gate wiring contacts a first transparent conductive layer formed on the gate wiring. The data wiring crosses the gate wiring. The data wiring contacts a second transparent conductive layer formed on the data wiring. The switching element is connected to the gate and data wirings. The organic layer is formed on a base substrate having the switching element formed thereon. The organic layer has first and second trenches corresponding to the first and second transparent conductive layers, respectively. The pixel electrode is formed in a pixel area of the organic layer.