摘要:
A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent:
摘要:
Disclosed herein is a resin composition for an organic insulating layer, a method of manufacturing the same, and a display panel including an insulating layer formed using the resin composition. The resin composition for an organic insulating layer is produced by polymerizing about 5 to about 35 wt % of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture of the unsaturated carboxylic acid and the unsaturated carboxylic acid anhydride, about 5 to about 40 wt % of a styrene compound, about 5 to about 40 wt % of an epoxy compound, about 0.1 to about 10 wt % of an isobornyl compound, and about 20 to about 40 wt % of a dicyclopentadiene compound, based on the total weight of unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, styrene compound, isobornyl compound, and dicyclopentadiene compound.
摘要:
A photosensitive composition and a method of manufacturing a substrate used for a display device are disclosed. The photosensitive composition includes an acrylic based copolymer, a photo-initiator, a photo-sensitizer and a solvent. Thus, a photosensitivity of the photosensitive composition for ultra violet light of a long wavelength may be improved.
摘要:
A photoresist composition capable of forming a high resolution pattern without an additional heating process includes an alkali-soluble phenol polymer in an amount of 10 to 70 parts by weight, including at least one unit of Formula 1, a photo-acid generator in an amount of 0.5 to 10 parts by weight, a dissolution inhibitor in an amount of 5 to 50 parts by weight, including at least one unit of Formula 2, and a solvent in an amount of 10 to 90 parts by weight, wherein the amounts of the foregoing components is based on a total of 100 parts by weight of alkali-soluble phenol polymer, photo-acid generator, dissolution inhibitor, and solvent, and wherein Formulas 1 and 2 have the structures: wherein R is a methyl group, wherein R1, R2 and R3 are the same or different and are hydrogen or t-butyl vinyl ether protective groups.
摘要:
A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent:
摘要:
A photoresist composition comprises about 0.5 to about 20 parts by weight of a photo-acid generator, about 10 to about 70 parts by weight of a novolac resin containing a hydroxyl group, about 1 to about 40 parts by weight of a cross-linker that comprises an alkoxymethylmelamine compound, and about 10 to about 150 parts by weight of a solvent.
摘要:
A photoresist composition capable of forming a high resolution pattern without an additional heating process includes an alkali-soluble phenol polymer in an amount of 10 to 70 parts by weight, including at least one unit of Formula 1, a photo-acid generator in an amount of 0.5 to 10 parts by weight, a dissolution inhibitor in an amount of 5 to 50 parts by weight, including at least one unit of Formula 2, and a solvent in an amount of 10 to 90 parts by weight, wherein the amounts of the foregoing components is based on a total of 100 parts by weight of alkali-soluble phenol polymer, photo-acid generator, dissolution inhibitor, and solvent, and wherein Formulas 1 and 2 have the structures: wherein R is a methyl group, wherein R1, R2 and R3 are the same or different and are hydrogen or t-butyl vinyl ether protective groups.
摘要翻译:能够在没有附加加热方法的情况下形成高分辨率图案的光致抗蚀剂组合物包括10至70重量份的碱溶性苯酚聚合物,包括至少一个式1的单元,量的光酸产生剂 为0.5〜10重量份,5〜50重量份的溶解抑制剂,包含至少1个单元的式2,溶剂的量为10〜90重量份,其中, 前述组分基于总共100重量份的碱溶性酚聚合物,光酸发生剂,溶解抑制剂和溶剂,其中式1和式2具有以下结构:其中R是甲基,其中R“ R 1,R 2,R 3和R 3相同或不同,为氢或叔丁基乙烯基醚保护基。
摘要:
A photoresist composition suitable for forming a high-resolution pattern, and a method of forming a photoresist pattern using the same. The photoresist composition includes about 10 to about 45 parts by weight of an alkali soluble binder resin including a hydroxyl group, about 0.1 to about 5 parts by weight of a photo-acid generator, about 1 to about 5 parts by weight of a cross-linker that cross-links the alkali-soluble binder resin including the hydroxyl group, about 0.3 to about 3 parts by weight of a quinone diazide compound, and a remainder of a solvent.
摘要:
The present invention relates to a photosensitive resin composition, particularly to a photosensitive resin composition for forming an interlayer organic insulating film for TFT-LCD, comprising 0.01 to 20 wt % of UV stabilizer or radical scavenger. The photosensitive resin composition of the present invention can be used for forming an interlayer organic insulating film for TFT-LCD to improve active unfilled area upon over exposure in liquid crystal photo-alignment process, can easily control resolution of pattern, and is particularly suitable for forming a planarization layer of an interlayer organic insulating film.
摘要:
A photoresist composition includes about 10 to about 70% by weight of a binder resin including a phenol-based polymer, about 0.5 to about 10% by weight of a photo-acid generator, about 1 to about 20% by weight of a cross-linker, about 0.1 to about 5% by weight of a dye and about 10 to about 80% by weight of a solvent. The photoresist composition may be applied to, for example, a method of manufacturing a TFT substrate.