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    METHOD OF DETERMINING AN OVERLAP DISTANCE OF AN OPTICAL HEAD AND DIGITAL EXPOSURE DEVICE USING THE METHOD
    4.
    发明申请
    METHOD OF DETERMINING AN OVERLAP DISTANCE OF AN OPTICAL HEAD AND DIGITAL EXPOSURE DEVICE USING THE METHOD 有权
    使用该方法确定光头和数字曝光装置的重叠距离的方法

    公开(公告)号：US20110199620A1

    公开(公告)日：2011-08-18

    申请号：US12902745

    申请日：2010-10-12

    申请人： Sang-Hyun YUN ,  Hi-Kuk LEE ,  Sang-Woo BAE ,  Cha-Dong KIM ,  Jung-In PARK

    发明人： Sang-Hyun YUN ,  Hi-Kuk LEE ,  Sang-Woo BAE ,  Cha-Dong KIM ,  Jung-In PARK

    IPC分类号： G01B11/14

    CPC分类号： G01B11/14 ,  G03F7/70291 ,  G03F7/70475

    摘要： An apparatus and a method for determining an overlap distance of an optical head is disclosed. Positions and light amount distributions of each light spot can be measured, which may be provided from an optical head to a substrate. Gaussian distribution may be applied to the positions and the light amount distributions to calculate a compensation model of each of the light spots. A first accumulated light amount corresponding to each first area of the substrate may be calculated if the optical head is scanning along a first direction of the substrate using the compensation model. A second accumulated light amount corresponding to each second area overlapped with the each first area is calculated if the optical head is scanning along the first direction, which is moved in a second direction by a first distance using the compensation model. An overlap distance may be determined based on a uniformity of summations of the first and second accumulated light amount.

    摘要翻译： 公开了一种用于确定光学头的重叠距离的装置和方法。 可以测量每个光点的位置和光量分布，其可以从光学头到基底提供。 高斯分布可以应用于位置和光量分布，以计算每个光点的补偿模型。 如果光头使用补偿模型沿着衬底的第一方向扫描，则可以计算对应于衬底的每个第一区域的第一累积光量。 如果光头沿着使用补偿模型沿第二方向在第二方向上移动第一距离的第一方向进行扫描，则计算与每个第一区域重叠的每个第二区域对应的第二累积光量。 可以基于第一和第二累积光量的相加的均匀性来确定重叠距离。

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20110140094A1

    公开(公告)日：2011-06-16

    申请号：US12823043

    申请日：2010-06-24

    申请人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

    发明人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

    IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L21/34 ,  H01L29/12

    CPC分类号： H01L29/66765 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

    摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer

    摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。 半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。 源电极和漏极设置在半导体的第二部分和栅极绝缘层上

    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same
    7.
    发明授权
    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same 有权
    光刻胶组合物及使用其制造薄膜晶体管基板的方法

    公开(公告)号：US07955784B2

    公开(公告)日：2011-06-07

    申请号：US11554194

    申请日：2006-10-30

    申请人： Hi-Kuk Lee ,  Woo-Seok Jeon ,  Doo-Hee Jung ,  Jeong-Min Park ,  Deok-Man Kang ,  Si-Young Jung ,  Jae-Young Choi

    发明人： Hi-Kuk Lee ,  Woo-Seok Jeon ,  Doo-Hee Jung ,  Jeong-Min Park ,  Deok-Man Kang ,  Si-Young Jung ,  Jae-Young Choi

    IPC分类号： G03F7/30

    CPC分类号： H01L27/1288 ,  G03F7/0233 ,  G03F7/0236 ,  H01L27/1214

    摘要： A photoresist composition includes about 100 parts by weight of resin mixture including novolak resin and acryl resin and about 10 parts to about 50 parts by weight of naphthoquinone diazosulfonic acid ester. A weight-average molecular weight of the novolak resin is no less than about 30,000. A weight-average molecular weight of the acryl resin is no less than about 20,000. The acryl resin makes up about 1% to about 15% of the total weight of the resin mixture. When a photoresist film formed using the photoresist composition is heated, a profile variation of the photoresist composition is relatively small. Therefore, a residual photoresist film has a uniform thickness, and a short circuit and/or an open defect in a TFT substrate may be reduced.

    摘要翻译： 光致抗蚀剂组合物包括约100重量份的包括酚醛清漆树脂和丙烯酸树脂的树脂混合物和约10重量份至约50重量份的萘醌重氮磺酸酯。 酚醛清漆树脂的重均分子量不小于约30,000。 丙烯酸树脂的重均分子量不小于约20,000。 丙烯酸树脂占树脂混合物总重量的约1％至约15％。 当使用光致抗蚀剂组合物形成的光致抗蚀剂膜被加热时，光致抗蚀剂组合物的轮廓变化相对较小。 因此，残留的光致抗蚀剂膜具有均匀的厚度，并且可能减小TFT基板中的短路和/或开路缺陷。

    Method of fabricating semiconductor device
    8.
    发明授权
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07763415B2

    公开(公告)日：2010-07-27

    申请号：US11430414

    申请日：2006-05-09

    申请人： Jeong-Min Park ,  Jang-Soo Kim ,  Hi-Kuk Lee

    发明人： Jeong-Min Park ,  Jang-Soo Kim ,  Hi-Kuk Lee

    IPC分类号： G03F7/00 ,  H01L21/00

    CPC分类号： H01L27/1288 ,  G03F7/40 ,  H01L21/0273 ,  H01L27/1214 ,  H01L29/66765

    摘要： A method of fabricating a semiconductor device is provided. The method includes forming at least one etch target film on a substrate, forming a first reflowable etch mask on the at least one etch target film, patterning the etch target film using the first reflowable etch mask. The method further includes reflowing the first reflowable etch mask to form a second etch mask and patterning the etch target film using the second etch mask.

    摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在衬底上形成至少一个蚀刻目标膜，在至少一个蚀刻靶膜上形成第一可回流蚀刻掩模，使用第一可回流蚀刻掩模对蚀刻目标膜进行构图。 该方法还包括回流第一可回流蚀刻掩模以形成第二蚀刻掩模，并使用第二蚀刻掩模对蚀刻目标膜进行图案化。

    METHOD OF MANUFACTURING A DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A DISPLAY APPARATUS USING THE SAME
    10.
    发明申请
    METHOD OF MANUFACTURING A DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A DISPLAY APPARATUS USING THE SAME 失效
    制造显示基板的方法及使用其制造显示装置的方法

    公开(公告)号：US20090280591A1

    公开(公告)日：2009-11-12

    申请号：US12421555

    申请日：2009-04-09

    申请人： Pil-Soon Hong ,  Jung-In Park ,  Hi-Kuk Lee

    发明人： Pil-Soon Hong ,  Jung-In Park ,  Hi-Kuk Lee

    IPC分类号： H01L21/28

    CPC分类号： H01L27/1288 ,  H01L27/3248 ,  H01L2227/323

    摘要： Provided is a method of manufacturing a display substrate. In the method, a gate line, a data line crossing the gate line, and a switching device are formed on a base substrate. A passivation layer, a first resist layer and a second resist layer are formed on the base substrate. The first resist layer and the second resist layer are patterned to form a resist pattern and an etch-stop pattern, the etch-stop pattern having a sidewall protruding from a sidewall of the resist pattern. A portion of the passivation layer is removed to form a contact hole on a drain electrode of the switching device. A pixel electrode electrically connected to the switching device through the contact hole is formed. Thus, an undercut between an etch-stop pattern and a resist pattern may be more easily formed without over-etching a passivation layer.

    摘要翻译： 提供一种制造显示基板的方法。 在该方法中，在基底基板上形成栅极线，与栅极线交叉的数据线以及开关元件。 在基底基板上形成钝化层，第一抗蚀剂层和第二抗蚀剂层。 图案化第一抗蚀剂层和第二抗蚀剂层以形成抗蚀剂图案和蚀刻停止图案，该蚀刻停止图案具有从抗蚀剂图案的侧壁突出的侧壁。 去除钝化层的一部分以在开关器件的漏电极上形成接触孔。 形成通过接触孔与开关装置电连接的像素电极。 因此，可以更容易地形成蚀刻停止图案和抗蚀剂图案之间的底切，而不会过度蚀刻钝化层。