Abstract:
A pixel structure is disclosed. The pixel structure includes a substrate, a first data line having at least one end formed on the substrate, a first insulation layer overlying the first data line and exposing a part of the end of the first data line, a shielding electrode disposed on the first insulation layer and overlapped with the first data line, a second data line formed on the first insulation layer and electrically connected to the exposed end of the first data line, a second insulation layer overlying the shielding electrode and the second data line, and a pixel electrode formed on the second insulation layer and overlapped with the shielding electrode. The invention also provides a method for fabricating the pixel structure.
Abstract:
An array substrate and method for manufacturing the same is provided, wherein a data line is composed of first and second segments connected by a contact pad. First and second insulation layers are disposed between the first segment of the data line and a shielding electrode. In addition, the first insulation layer is disposed between the second segment of the data line and a gate line in their overlapping area. Accordingly, the coupling effect between the conductive layers can be reduced. For example, the RC delay problem due to parasitic capacitance between the shielding electrode and the data line is solved. As a result of the design of the two insulator layers between the first segment of the data line and the shielding electrode, the shorting between the conductive layers can also be simultaneously solved and the product yield can be increased.
Abstract:
A method for manufacturing an array substrate is provided, wherein a data line is composed of first and second segments connected by a contact pad. First and second insulation layers are disposed between the first segment of the data line and a shielding electrode. In addition, the first insulation layer is disposed between the second segment of the data line and a gate line in their overlapping area. Accordingly, the coupling effect between the conductive layers can be reduced. For example, the RC delay problem due to parasitic capacitance between the shielding electrode and the data line is solved. As a result of the design of the two insulator layers between the first segment of the data line and the shielding electrode, the shorting between the conductive layers can also be simultaneously solved and the product yield can be increased.
Abstract:
A pixel structure includes at least a pixel electrode, and at least an aligning electrode. The pixel electrode, which has a central opening, is disposed on a substrate. The aligning electrode, which is disposed between the pixel electrode and substrate, includes an aligning part disposed under and corresponding to the central part of the pixel electrode. The aligning voltage applied to the aligning electrode is greater than the pixel voltage applied to the pixel electrode.
Abstract:
A reflective touch display panel and a manufacturing method thereof are provided. An incident light enters the display panel through a front substrate thereof. A plurality of pixel structures and a plurality of light sensing devices are disposed on an inner surface of the front substrate. The light sensing device includes a light sensing transistor having a transparent gate electrode. The manufacturing method for the reflective touch display panel includes the following steps. A first patterned transparent conductive layer, including the transparent gate electrode and a capacitance lower electrode, is formed on the front substrate. A first patterned conductive layer, a dielectric layer, a patterned semi-conductive layer, a second patterned conductive layer and a second patterned transparent conductive layer are sequentially formed on the front substrate to respectively form the light sensing device and the pixel structure. A reflective material layer and a back substrate are. assembled on the front substrate to complete the reflective touch display panel.
Abstract:
A method of driving an electrophoretic display is set forth for avoiding image-edge residual while sequentially displaying a first frame and a second frame. During the time of displaying the first frame, set a common voltage to be a first voltage, apply a second voltage different from the first voltage to a first pixel for writing a first data signal into the first pixel, and apply the first voltage to a second pixel adjacent to the first pixel for retaining a second data signal of the second pixel, which is different from the first data signal. During the time of displaying the second frame, set the common voltage to be the second voltage, apply the first voltage to the first pixel for writing the second data signal into the first pixel, and apply the first voltage to the second pixel for retaining the second data signal of the second pixel.
Abstract:
A method of manufacturing a pixel structure is provided. A first patterned conductive layer including a gate and a data line is formed on a substrate. A gate insulating layer is formed to cover the first patterned conductive layer and a semiconductor channel layer is formed on the gate insulating layer above the gate. A second patterned conductive layer including a scan line, a common line, a source and a drain is formed on the gate insulating layer and the semiconductor channel layer. The scan line is connected to the gate and the common line is located above the data line. The source and drain are located on the semiconductor channel layer, and the source is connected to the data line. A passivation layer is formed on the substrate to cover the second patterned conductive layer. A pixel electrode connected to the drain is formed on the passivation layer.
Abstract:
This invention in one aspect relates to a pixel structure. In one embodiment, the pixel structure includes a scan line formed on a substrate and a data line formed over the substrate defining a pixel area, a switch formed inside the pixel area on the substrate, a shielding electrode formed over the switch, a plane organic layer formed over the date line and the pixel area and having no overlapping with the shielding electrode, and a pixel electrode having a first portion and a second portion extending from the first portion, and formed over the shielding electrode and the plane organic layer in the pixel area, wherein the first portion is overlapped with the shielding electrode so as to define a storage capacitor therebetween, and the second portion overlays the plane organic layer and has no overlapping with the data line.
Abstract:
An active matrix array structure, disposed on a substrate, includes a first patterned conductive layer, a patterned gate insulating layer, a patterned semiconductor layer, a second patterned conductive layer, a patterned overcoat layer and a transparent conductive layer. The patterned gate insulating layer has first openings that expose a part of the first patterned conductive layer. The patterned semiconductor layer is disposed on the patterned gate insulating layer. The second patterned conductive layer is disposed on the patterned semiconductor layer. The patterned overcoat layer has second openings that expose a part of the first patterned conductive layer and a part of the second patterned conductive layer. The transparent conductive layer is completely disposed on the substrate. The transparent conductive layer disposed in the first openings and the second openings is broken off at a position that is in between the substrate and the patterned overcoat layer.
Abstract:
A pixel structure includes a first patterned metal layer, a gate insulating layer, a semiconductor channel layer, a second patterned metal layer, a passivation layer, and a conducting layer. A gate line of the second patterned metal layer is electrically connected by the conducting layer to a gate extension electrode of the first patterned metal layer. A source electrode of the second patterned metal layer is electrically connected by the conducting layer to a second data line segment of the first patterned metal layer. A method for fabricating a pixel structure is also disclosed herein.