公开(公告)号：US20230197442A1

公开(公告)日：2023-06-22

申请号：US18061653

申请日：2022-12-05

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  HAMAMATSU PHOTONICS K.K.

Inventor： TAKASHI USHIJIMA ,  MASATAKE NAGAYA ,  DAISUKE KAWAGUCHI ,  KEISUKE HARA

IPC: H01L21/02 ,  H01L29/20

CPC classification number: H01L21/02354 ,  H01L29/2003

Abstract: A method of manufacturing a semiconductor device includes irradiation of laser on a semiconductor substrate and cutting of the semiconductor substrate. The laser is irradiated on the semiconductor substrate while moving a focal point of the laser inside the semiconductor substrate. The semiconductor includes a specific crystal plane that is easier to be cleaved, and that is tilted to the surface of the semiconductor substrate. The irradiation of the laser includes repetition of a specific modified layer formation process in which one of the specific modified layers along the specific crystal plane is formed by moving the focal point along the specific crystal plane. In the irradiation of the laser, the specific modified layers are arranged in a direction parallel to the surface of the semiconductor substrate. In the cutting of the semiconductor substrate, the semiconductor substrate is cut along the specific modified layers.

公开(公告)号：US20230187490A1

公开(公告)日：2023-06-15

申请号：US18055032

申请日：2022-11-14

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： SHINICHI HOSHI

IPC: H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/423 ,  H01L29/778 ,  H01L21/02 ,  H01L21/306 ,  H01L21/308 ,  H01L29/66

CPC classification number: H01L29/0634 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/7788 ,  H01L21/0254 ,  H01L21/30621 ,  H01L21/308 ,  H01L29/66462

Abstract: A semiconductor device includes a semiconductor substrate including a semiconductor element, a first surface-side electrode disposed on a first surface of the semiconductor substrate, and a second surface-side electrode disposed on a second surface of the semiconductor substrate. The semiconductor substrate includes a gallium nitride substrate and first column regions and second column regions disposed on a first principal surface of the gallium nitride substrate and alternately arranged along a c-axis direction in the first principal surface. The first column regions are formed of a first nitride semiconductor layer and the second column regions are formed of a second nitride semiconductor layer that is higher in band gap than the first nitride semiconductor layer. The semiconductor element is configured to enable a current to flow between the first surface and the second surface of the semiconductor substrate.

公开(公告)号：US20230143618A1

公开(公告)日：2023-05-11

申请号：US17977420

申请日：2022-10-31

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Yohei IWAHASHI ,  Jun SAITO

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L29/66

CPC classification number: H01L29/0634 ,  H01L29/1608 ,  H01L29/1095 ,  H01L29/7813 ,  H01L21/046 ,  H01L29/66068

Abstract: In a semiconductor device, a first deep layer has a high-concentration region and a low-concentration region in a concentration profile of an impurity concentration along a depth direction. The high-concentration region has a high concentration peak at which an impurity concentration is maximum, and includes a region that is not depleted in an off state. The low-concentration region is closer to a high-concentration layer than the high-concentration region, has a region in which a gradient of change in impurity concentration is smaller than a predetermined value, and is depleted in the off state. A first length between a first position closest to a base layer in the first deep layer and a second position of the high concentration peak is shorter than a second length between the second position and a third position closest to the base layer in the low-concentration region.

公开(公告)号：US20230118387A1

公开(公告)日：2023-04-20

申请号：US17950347

申请日：2022-09-22

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： MASATOSHI TSUJI ,  HIROSHI ANDO ,  KAZUYUKI ISHIHARA

IPC: G02B6/42 ,  B60R1/12 ,  B60R1/00

Abstract: An optical device includes a light guide and a light shielding portion. The light guide has: an incident surface on which an external scene light coming from a blind area is incident; a first surface including flat portions and prism portions; and a second surface opposite to the flat portions. The light shielding portion is provided on a surface of the light guide or at a position away from the light guide so as to block an outside light entering the light guide. The light shielding portion has a first light shielding portion for blocking light incident on an inclined surface and a second light shielding portion for blocking light incident on the flat portion in a predetermined direction.

公开(公告)号：US20230116302A1

公开(公告)日：2023-04-13

申请号：US17948329

申请日：2022-09-20

Applicant: Denso Corporation ,  Toyota Jidosha Kabushiki Kaisha ,  MIRISE Technologies Corporation ,  Hamamatsu Photonics K.K. ,  National University Corporation Tokai National Higher Education and Research System

Inventor： MASATAKE NAGAYA ,  Hiroki Watanabe ,  Junji Ohara ,  Daisuke Kawaguchi ,  Keisuke Hara ,  Chiaki Sasaoka ,  Jun Kojima ,  Shoichi Onda

IPC: H01L23/14 ,  H01L23/13 ,  H01L21/8252

Abstract: A semiconductor chip includes a chip-constituting substrate having one surface, the other surface opposite to the one surface, and two pairs of opposing side surfaces connecting the one surface and the other surface. The one surface and the other surface are along one of a {0001} c-plane, a {1-100} m-plane, and a {11-20} a-plane. One of the two pairs of opposing side surfaces is along another one of the {0001} c-plane, the {1-100} m-plane, and the {11-20} a-plane. The other of the two pairs of opposing side surfaces is along the other of the {0001} c-plane, the {1-100} m-plane, and the {11-20} a-plane. The side surface includes an altered layer containing gallium oxide and gallium metal in a surface layer portion in a depth direction which is a normal direction to the side surface.

公开(公告)号：US20230095477A1

公开(公告)日：2023-03-30

申请号：US17947585

申请日：2022-09-19

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  HAMAMATSU PHOTONICS K.K.

Inventor： KOZO KATO ,  DAISUKE KAWAGUCHI

IPC: H01L21/268 ,  H01L21/78 ,  H01L21/784 ,  H01L29/08 ,  H01L21/428

Abstract: A method for manufacturing a semiconductor device, includes: applying a laser beam to a plane extending at a predetermined depth in a semiconductor substrate from a second main surface side of the semiconductor substrate opposite to a first main surface side on which a device structure including a channel is formed; and peeling off a device layer including the device structure from the semiconductor substrate along the plane applied with the laser beam. In the applying of the laser beam, the laser beam is applied so that a power density is lower in a region corresponding to the channel in a thickness direction of the semiconductor substrate than in the other region, in the plane extending at the predetermined depth in the semiconductor substrate.

公开(公告)号：US20230081110A1

公开(公告)日：2023-03-16

申请号：US17890795

申请日：2022-08-18

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： KATSUHIRO KUTSUKI ,  KEITA KATAOKA ,  DAIGO KIKUTA ,  HIROKI MIYAKE ,  SHUHEI ICHIKAWA ,  YOSHITAKA NAGASATO

IPC: H01L29/872 ,  H01L29/24 ,  H01L21/465

Abstract: In a surface treatment method for a gallium oxide-based semiconductor substrate, a surface of the gallium oxide-based semiconductor substrate is flattened by dry etching with a self-bias of 150 V or more. After the surface of the gallium oxide-based semiconductor substrate is flattened, the surface of the gallium oxide-based semiconductor substrate is washed with a chemical solution containing H2SO4 to expose a step terrace structure on the surface of the gallium oxide-based semiconductor substrate.

公开(公告)号：US20230037606A1

公开(公告)日：2023-02-09

申请号：US17880139

申请日：2022-08-03

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Jun SAITO ,  Masatoshi TSUJIMURA

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/423

Abstract: A field effect transistor includes a semiconductor substrate and multiple trenches disposed at a top surface of the semiconductor substrate. The trenches extend in a first direction at the top surface of the semiconductor substrate, and are disposed to be spaced apart in a direction perpendicular to the first direction. Connection regions are disposed below body regions. The connection regions extend in a second direction intersecting the first direction in a top view of the semiconductor substrate, and are spaced apart in a direction perpendicular to the second direction. Field relaxation regions are disposed below the connection regions and the trenches. The field relaxation regions extend in a third direction intersecting the first direction and the second direction in the top view of the semiconductor substrate, and are spaced apart in a direction perpendicular to the third direction.

公开(公告)号：US20220415765A1

公开(公告)日：2022-12-29

申请号：US17846371

申请日：2022-06-22

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： HIROSHI ISHINO ,  HIROKAZU SAMPEI ,  KATSUYA KUMAGAI ,  KOJI DOI

IPC: H01L23/495 ,  H01L23/31

Abstract: A semiconductor module includes a resin molded part encapsulating a semiconductor chip, a first terminal having a plate shape, and a second terminal having a plate shape. The first terminal and the second terminal are disposed on top of the other in a thickness direction. The first terminal is exposed from a first surface of the resin molded part, and the second terminal is projected from a second surface of the resin molded part to an outside of the resin molded part, the second surface being different from the first surface from which the first terminal is exposed.

公开(公告)号：US20220377466A1

公开(公告)日：2022-11-24

申请号：US17583749

申请日：2022-01-25

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Tomoki TANEMURA ,  Hideyuki NAGAI

IPC: H04R19/04 ,  H03G5/16 ,  H04R3/04 ,  H04R19/00

Abstract: A microphone has a MEMS device, a driver, and a control unit. The MEMS device outputs a first electrical signal according to an acoustic pressure. The driver vibrates the MEMS device by a drive signal. The control unit calculates a correction value for correcting the first electric signal based on a second electric signal output from the MEMS device when the MEMS device is vibrated by the drive signal.