公开(公告)号：US08313960B1

公开(公告)日：2012-11-20

申请号：US13371380

申请日：2012-02-10

Applicant: Ebrahim Abedifard ,  Parviz Keshtbod

Inventor： Ebrahim Abedifard ,  Parviz Keshtbod

IPC: H01L21/00

CPC classification number: H01L43/12

Abstract: A method of manufacturing a magnetic memory element includes the steps of forming a permanent magnetic layer on top a bottom electrode, forming a pinning layer on top the permanent magnetic layer, forming a magnetic tunnel junction (MTJ) including a barrier layer on top of the pinning layer, forming a top electrode on top of the MTJ, forming a hard mask on top of the top electrode, and using the hard mask to perform a series of etching processes to reduce the width of the MTJ and the top electrode to substantially a desired width, where one of these etching processes is stopped when a predetermined material in the pinning layer is detected thereby avoiding deposition of metal onto the barrier layer of the etching process thereby preventing shorting.

Abstract translation: 一种制造磁存储元件的方法包括以下步骤：在底部电极的顶部形成永久磁性层，在永久磁性层的顶部形成钉扎层，形成包含阻挡层的磁性隧道结（MTJ） 钉扎层，在MTJ的顶部形成顶部电极，在顶部电极的顶部上形成硬掩模，并且使用硬掩模执行一系列蚀刻工艺以将MTJ和顶部电极的宽度减小到基本上 当检测到钉扎层中的预定材料时，这些蚀刻工艺中的一个停止，从而避免金属沉积到蚀刻工艺的阻挡层上，从而防止短路。

公开(公告)号：US08289757B2

公开(公告)日：2012-10-16

申请号：US12778725

申请日：2010-05-12

Applicant: Parviz Keshtbod ,  Ebrahim Abedifard

Inventor： Parviz Keshtbod ,  Ebrahim Abedifard

IPC: G11C11/00

CPC classification number: G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/105 ,  H01L27/228

Abstract: A magnetic random access memory (MRAM) cell includes an embedded MRAM and an access transistor. The embedded MRAM is formed on a number of metal-interposed-in-interlayer dielectric (ILD) layers, which each include metal dispersed therethrough and are formed on top of the access transistor. An magneto tunnel junction (MTJ) is formed on top of a metal formed in the ILD layers that is in close proximity to a bit line. An MTJ mask is used to pattern the MTJ and is etched to expose the MTJ. Ultimately, metal is formed on top of the bit line and extended to contact the MTJ.

Abstract translation: 磁性随机存取存储器（MRAM）单元包括嵌入式MRAM和存取晶体管。 嵌入式MRAM形成在多个金属插入层间电介质（ILD）层中，每个层包括分散在其中的金属并形成在存取晶体管的顶部。 在位于靠近位线的ILD层中形成的金属的顶部上形成磁隧道结（MTJ）。 MTJ掩模用于对MTJ进行图案蚀刻，以暴露MTJ。 最终，在位线顶部形成金属并延伸以接触MTJ。

公开(公告)号：US20120230095A1

公开(公告)日：2012-09-13

申请号：US13476879

申请日：2012-05-21

Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

IPC: G11C11/16

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08

Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

Abstract translation: 非易失性磁存储元件包括多个层，其中之一是分级的自由层。 分级自由层可以包括各种元素，其中每个元素具有不同的各向异性，或者其可以包括非磁性化合物和磁性区域，其中非磁性化合物形成梯度含量形成独特的形状，例如锥形，菱形或其它形状，并且其厚度 是基于磁性化合物的反应性。

公开(公告)号：US08183652B2

公开(公告)日：2012-05-22

申请号：US11739648

申请日：2007-04-24

Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod

Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod

IPC: H01L29/82 ,  G11C11/00

CPC classification number: H01L43/10 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

Abstract: A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the first free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second free layer, and a top electrode formed on top of the cap layer.

Abstract translation: 非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。 存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的第一自由层，形成在第一自由层的顶部上的粒状膜层，形成在第一自由层顶部的第二自由层 颗粒膜层，形成在第二自由层顶部上的盖层，以及形成在盖层顶部上的顶部电极。

公开(公告)号：US20120107964A1

公开(公告)日：2012-05-03

申请号：US13345608

申请日：2012-01-06

Applicant: Rajiv Yadav RANJAN ,  Parviz KESHTBOD ,  Mahmud ASSAR

Inventor： Rajiv Yadav RANJAN ,  Parviz KESHTBOD ,  Mahmud ASSAR

IPC: H01L21/8239

CPC classification number: G06F12/0246 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C14/00 ,  H01L27/105 ,  H01L27/224

Abstract: A method of flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.

Abstract translation: 闪存RAM存储器的方法包括形成在单片模块上的非易失性随机存取存储器（RAM）和形成在非易失性RAM，非易失性页面模式存储器和非易失性页面模式存储器之上的非易失性页面模式存储器 非易失性RAM驻留在单片芯片上。 非易失性RAM由以三维形式布置的磁存储单元堆叠形成，用于更高密度和更低成本。

公开(公告)号：US20120069649A1

公开(公告)日：2012-03-22

申请号：US13305646

申请日：2011-11-28

Applicant: Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

Inventor： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

IPC: G11C11/14 ,  H01L29/82

CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

公开(公告)号：US20120069643A1

公开(公告)日：2012-03-22

申请号：US13305677

申请日：2011-11-28

Applicant: Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

Inventor： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

IPC: G11C11/00

CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

Abstract translation: 非均匀开关型非易失性磁存储元件包括固定层，形成在固定层顶部上的阻挡层，形成在阻挡层顶部上的第一自由层，形成非均匀开关层（NSL） 在第一自由层的顶部和形成在不均匀开关层的顶部上的第二自由层。 在基本上垂直于固定层，阻挡层，第一自由层，不均匀的开关层和第二自由层的方向上施加开关电流，导致第一自由层，第二自由层和非自由层的状态之间的切换， 均匀的开关层，开关电流大大降低。

公开(公告)号：US20120025338A1

公开(公告)日：2012-02-02

申请号：US13253916

申请日：2011-10-05

Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

IPC: H01L29/82

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08

Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

Abstract translation: 非易失性磁存储元件包括多个层，其中之一是分级的自由层。 分级自由层可以包括各种元素，其中每个元素具有不同的各向异性，或者其可以包括非磁性化合物和磁性区域，其中非磁性化合物形成梯度含量形成独特的形状，例如锥形，菱形或其它形状，并且其厚度 是基于磁性化合物的反应性。

公开(公告)号：US20120003757A1

公开(公告)日：2012-01-05

申请号：US13235232

申请日：2011-09-16

Applicant: Rajiv Yadav Ranjan ,  Mahmud Assar ,  Parviz Keshtbod

Inventor： Rajiv Yadav Ranjan ,  Mahmud Assar ,  Parviz Keshtbod

IPC: H01L21/8246

CPC classification number: G11C11/1675 ,  B82Y10/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

Abstract: A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.

Abstract translation: 多状态电流切换磁存储元件包括由用于存储多于一位的信息的非磁性层分开的磁隧道结（MTJ）堆叠，其中施加到存储元件的不同电流电平导致切换到不同的 状态。

公开(公告)号：US08084835B2

公开(公告)日：2011-12-27

申请号：US11674124

申请日：2007-02-12

Applicant: Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

Inventor： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

IPC: H01L29/82 ,  G11C11/00

CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

Abstract translation: 非均匀开关型非易失性磁存储元件包括固定层，形成在固定层顶部上的阻挡层，形成在阻挡层顶部上的第一自由层，形成非均匀开关层（NSL） 在第一自由层的顶部和形成在不均匀开关层的顶部上的第二自由层。 在基本上垂直于固定层，阻挡层，第一自由层，不均匀的开关层和第二自由层的方向上施加开关电流，导致第一自由层，第二自由层和非自由层的状态之间的切换， 均匀的开关层，开关电流大大降低。