公开(公告)号：US20050006716A1

公开(公告)日：2005-01-13

申请号：US10776338

申请日：2004-02-12

Applicant: Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

Inventor： Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

IPC: H01L21/04 ,  H01L21/337 ,  H01L21/8232 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/07 ,  H01L27/088 ,  H01L27/095 ,  H01L29/24 ,  H01L29/80 ,  H01L29/808 ,  H01L29/00

CPC classification number: H01L29/66068 ,  H01L27/0705 ,  H01L27/088 ,  H01L29/1608 ,  H01L29/808 ,  H01L29/8083

Abstract: A semiconductor device includes a first field effect transistor including a source and a gate and disposed in a silicon carbide substrate; and a second field effect transistor including a drain and a gate and disposed in the substrate. The drain of the second field effect transistor connects to the source of the first field effect transistor. The gate of the second field effect transistor connects to the gate of the first field effect transistor.

Abstract translation: 半导体器件包括：第一场效应晶体管，其包括源极和栅极，并设置在碳化硅衬底中; 以及包括漏极和栅极并设置在所述衬底中的第二场效应晶体管。 第二场效应晶体管的漏极连接到第一场效应晶体管的源极。 第二场效应晶体管的栅极连接到第一场效应晶体管的栅极。

公开(公告)号：US06838581B2

公开(公告)日：2005-01-04

申请号：US10309010

申请日：2002-12-04

Applicant: Pradeep Kumar ,  Rajesh Kumar Pandey

Inventor： Pradeep Kumar ,  Rajesh Kumar Pandey

IPC: C07C215/30 ,  C07C213/02

CPC classification number: C07C215/30 ,  C07B2200/07 ,  Y02P20/582

Abstract: The present invention relates to an improved process for the synthesis of enantiomerically pure 3-phenyl-3-hydroxypropylamine of formula I; more particularly the present invention relates to the said process using styrene; the synthetic strategy features a Sharpless asymmetric dihydroxylation (SAD) route to the target compound, using styrene, a readily accessible starting material gives the optically pure dihydroxy compound (ee >97%; the selective monotosylation of primary alcohol, nucleophilic displacement by cyano and subsequent reduction to amino group furnishes the desired 3-phenyl-3-hydroxypropylamine in enatiomerically pure form, a key intermediate in the synthesis of variety of oxetine related anti-depressant drugs.

公开(公告)号：US06824822B2

公开(公告)日：2004-11-30

申请号：US09942631

申请日：2001-08-31

Applicant: Michael E. Rickey ,  J. Michael Ramstack ,  Rajesh Kumar

Inventor： Michael E. Rickey ,  J. Michael Ramstack ,  Rajesh Kumar

IPC: B01J1312

CPC classification number: A61K38/09 ,  A61K9/1641 ,  A61K9/1647 ,  A61K9/1682 ,  A61K9/1694 ,  A61K9/5089 ,  A61K31/519 ,  B01J8/025 ,  B01J13/08 ,  B01J13/12 ,  B01J13/206 ,  B01J14/00 ,  B01J19/121 ,  B01J19/122 ,  B01J19/2415 ,  B01J2219/0877

Abstract: Methods for preparing microparticles having reduced residual solvent levels. Microparticles are contacted with a non-aqueous washing system to reduce the level of residual solvent in the microparticles. Preferred non-aqueous washing systems include 100% ethanol and a blend of ethanol and heptane. A solvent blend of a hardening solvent and a washing solvent can be used to harden and wash microparticles in a single step, thereby eliminating the need for a post-hardening wash step.

Abstract translation: 制备具有降低的残留溶剂水平的微粒的方法。 微粒与非水洗涤体系接触以降低微粒中残留溶剂的含量。 优选的非水洗涤系统包括100％乙醇和乙醇与庚烷的混合物。 可以使用硬化溶剂和洗涤溶剂的溶剂共混物在一个步骤中硬化和洗涤微粒，从而不需要后硬化洗涤步骤。

公开(公告)号：US06803676B2

公开(公告)日：2004-10-12

申请号：US10054096

申请日：2002-01-22

Applicant: Makoto Tanaka ,  Toru Akazawa ,  Rajesh Kumar Dixit

Inventor： Makoto Tanaka ,  Toru Akazawa ,  Rajesh Kumar Dixit

IPC: A63F1300

CPC classification number: A63F13/24 ,  A63F13/06 ,  A63F13/235 ,  A63F13/285 ,  A63F2300/1025 ,  A63F2300/1031 ,  Y10T307/305 ,  Y10T307/383 ,  Y10T307/391

Abstract: A wireless controller is provided with at least two power supplies. The internal components of the controller are classified into at least two groups in accordance with the degrees of functional importance or the power consumptions of the components. The power supplies separately supply electric power to the respective groups of the components. Thus, the power supply to components with high degrees of functional importance or low power consumptions is ensured for a long time.

Abstract translation: 无线控制器具有至少两个电源。 控制器的内部组件根据组件的功能重要性或功耗的程度分为至少两组。 电源单独地向组件的各组提供电力。 因此，长时间保证对具有高度功能重要性或低功耗的部件的电力供应。

公开(公告)号：US06789730B1

公开(公告)日：2004-09-14

申请号：US10417869

申请日：2003-04-17

Applicant: George Neville Trelawney ,  Sharad Handoo ,  Sathiya Moorthy Paramasivam ,  Udhaya Kumar Varadarajan ,  Madhusudhanan Moorthy ,  Arjumand Ara ,  Suresh Ramamoorthy ,  Rajesh Kumar Vijayakumar ,  Siva Kumar Subramanian ,  Paul Mercina

Inventor： George Neville Trelawney ,  Sharad Handoo ,  Sathiya Moorthy Paramasivam ,  Udhaya Kumar Varadarajan ,  Madhusudhanan Moorthy ,  Arjumand Ara ,  Suresh Ramamoorthy ,  Rajesh Kumar Vijayakumar ,  Siva Kumar Subramanian ,  Paul Mercina

IPC: G06F700

CPC classification number: G07F19/20 ,  G07F9/026 ,  G07F19/207

Abstract: A diagnostic server software component for an automated banking machine is provided. The diagnostic server is operative to periodically retrieve diagnostic messages from a nonvolatile memory of the machine and store the diagnostic messages on the hard drive of the machine. The software is further operative responsive to communication from an external computing device to send diagnostic messages stored on the hard drive to an external computing device. The software may further be operative to route transaction diagnostic messages between the machine and a remote host banking system. The software may retrieve the diagnostic messages directly from a specified memory address of the nonvolatile memory. The software may periodically communicate with terminal control software of the machine to cause the terminal control software to retrieve the diagnostic messages from the nonvolatile memory.

公开(公告)号：US06676018B1

公开(公告)日：2004-01-13

申请号：US10417847

申请日：2003-04-17

Applicant: George Neville Trelawney ,  Sharad Handoo ,  Sathiya Moorthy Paramasivam ,  Udhaya Kumar Varadarajan ,  Madhusudhanan Moorthy ,  Arjumand Ara ,  Suresh Ramamoorthy ,  Rajesh Kumar Vijayakumar ,  Siva Kumar Subramanian ,  Paul Mercina

Inventor： George Neville Trelawney ,  Sharad Handoo ,  Sathiya Moorthy Paramasivam ,  Udhaya Kumar Varadarajan ,  Madhusudhanan Moorthy ,  Arjumand Ara ,  Suresh Ramamoorthy ,  Rajesh Kumar Vijayakumar ,  Siva Kumar Subramanian ,  Paul Mercina

IPC: G06F708

CPC classification number: G07F19/20 ,  G07F19/207 ,  G07F19/211

Abstract: A diagnostic server software component for an automated banking machine is provided. The diagnostic server is operative to periodically retrieve diagnostic messages from a nonvolatile memory of the machine and store the diagnostic messages on the hard drive of the machine. The software is further operative responsive to communication from an external computing device to send diagnostic messages stored on the hard drive to an external computing device. The software may further be operative to route transaction diagnostic messages between the machine and a remote host banking system. The software may retrieve the diagnostic messages directly from a specified memory address of the nonvolatile memory. The software may periodically communicate with terminal control software of the machine to cause the terminal control software to retrieve the diagnostic messages from the nonvolatile memory.

Abstract translation: 提供了一种用于自动银行机的诊断服务器软件组件。 诊断服务器可操作以从机器的非易失性存储器周期性地检索诊断消息，并将诊断消息存储在机器的硬盘驱动器上。 软件进一步响应于来自外部计算设备的通信而发送存储在硬盘驱动器上的诊断消息到外部计算设备。 软件还可以用于在机器和远程主机银行系统之间路由交易诊断消息。 软件可以直接从非易失性存储器的指定存储器地址检索诊断消息。 软件可以周期性地与机器的终端控制软件进行通信，以使终端控制软件从非易失性存储器检索诊断消息。

公开(公告)号：US06576929B2

公开(公告)日：2003-06-10

申请号：US10135522

申请日：2002-05-01

Applicant: Rajesh Kumar ,  Takamasa Suzuki

Inventor： Rajesh Kumar ,  Takamasa Suzuki

IPC: H01K2978

CPC classification number: H01L29/66068 ,  H01L29/1608 ,  H01L29/7722 ,  H01L29/8083

Abstract: A channel layer 4 is formed on an n−-type epitaxial layer 2 and first gate areas 3, and field enhanced area(s) 5 and second gate areas 6 are formed on the first gate areas 3. Furthermore, n+-type source areas 7 and a third gate area 8 are formed on the second gate areas 6. These steps result in a device structure having a first J-FET with the n+-type source areas 7 and the n+-type substrate 1 as a source and drain and the first gate areas 3 at the right and left in the figure as a gate; and the second J-FET with the n+-type source areas 7 and the n+-type substrate 1 as a source and drain and the second gate areas 6 and the third gate area 8 as a gate. The first J-FET is normally-on, while the second J-FET is normally-off.

公开(公告)号：US06573534B1

公开(公告)日：2003-06-03

申请号：US09265582

申请日：1999-03-10

Applicant: Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Shoichi Onda ,  Mitsuhiro Kataoka ,  Kunihiko Hara ,  Eiichi Okuno ,  Jun Kojima

Inventor： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Shoichi Onda ,  Mitsuhiro Kataoka ,  Kunihiko Hara ,  Eiichi Okuno ,  Jun Kojima

IPC: H01L310312

CPC classification number: H01L29/7828 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7838 ,  Y10S438/931

Abstract: A semiconductor device, comprising: a semiconductor substrate comprising silicon carbide of a first conductivity type; a silicon carbide epitaxial layer of the first conductivity type; a first semiconductor region formed on the semiconductor substrate and comprising silicon carbide of a second conductivity type; a second semiconductor region formed on the first semiconductor region, comprising silicon carbide of the first conductivity type and separated from the semiconductor substrate of the first conductivity type by the first semiconductor region; a third semiconductor region formed on the semiconductor region, connected to the semiconductor substrate and the second semiconductor region, comprising silicon carbide of the first conductivity type, and of higher resistance than the semiconductor substrate; and a gate electrode formed on the third semiconductor region via an insulating layer; wherein the third semiconductor layer is depleted when no voltage is being applied to the gate electrode so that said semiconductor device has a normally OFF characteristic.

Abstract translation: 一种半导体器件，包括：包含第一导电类型的碳化硅的半导体衬底; 第一导电类型的碳化硅外延层; 形成在所述半导体衬底上并且包括第二导电类型的碳化硅的第一半导体区域; 形成在所述第一半导体区域上的第二半导体区域，包括所述第一导电类型的碳化硅并且通过所述第一半导体区域与所述第一导电类型的半导体衬底分离; 形成在所述半导体区域上的第三半导体区域，与所述半导体衬底和所述第二半导体区域连接，所述第二半导体区域包括所述第一导电型的碳化硅，并且具有比所述半导体衬底更高的电阻; 以及经由绝缘层形成在所述第三半导体区域上的栅电极; 其中当没有电压施加到所述栅电极时，所述第三半导体层被耗尽，使得所述半导体器件具有正常OFF特性。

公开(公告)号：US06465937B1

公开(公告)日：2002-10-15

申请号：US09521167

申请日：2000-03-08

Applicant: Jie Chen ,  Rajesh Kumar Panda ,  Turuvekere R Gururaja ,  Heather Beck

Inventor： Jie Chen ,  Rajesh Kumar Panda ,  Turuvekere R Gururaja ,  Heather Beck

IPC: H01L4104

CPC classification number: H01L41/1875 ,  H01L41/18

Abstract: This invention is directed to a transducer comprising a lead-based single crystal wherein the crystal is diagonally oriented and has an effective coupling constant of at least 0.70. In one embodiment, the lead-based crystal has the formula Pb(B′B″)O3—PbTiO3 wherein B′ is Mg2+, Zn2+, Ni2+ or Sc3+ and B″ is Nb5+, Ta5+ or W6+. Preferably, the lead-based crystal has of the formula Pb(B′B″)O3—PbTiO3 where B′ is Mg2+, Zn2+, Sc3+ and B″ is Nb5+ or more specifically Pb(Mg1/3Nb2/3)O3—PbTiO3 (“PMN—PT”), Pb(Zn1/3Nb2/3)O3—PbTiO3 (“PZN—PT”), and Pb(Sc1/3Nb2/3)O3—PbTiO3 (“PSN—PT”). The invention also includes a transducer comprising a plurality of lead-based single crystal transducers. In one embodiment the ultrasonic probe comprising one or more piezoelectric components having surfaces that function as transmitting and/or receiving elements; and electrodes placed upon opposite surfaces of the elements, and wherein each lead based piezoelectric component as described above. In addition, the invention includes improved materials for reduced spurious modes. Furthermore, the invention includes diagonally oriented lead-based transducers.

Abstract translation: 本发明涉及一种包含铅基单晶的换能器，其中晶体是对角线取向的，并且具有至少0.70的有效耦合常数。 在一个实施方案中，铅基晶体具有式Pb（B'B“）O3-PbTiO3，其中B'是Mg2 +，Zn2 +，Ni2 +或Sc3 +，B”是Nb5 +，Ta5 +或W6 +。 优选地，铅基晶体具有式Pb（B'B“）O3-PbTiO3，其中B'是Mg2 +，Zn2 +，Sc3 +和B”是Nb5 +或更具体的是Pb（Mg1 / 3Nb2 / 3）O3- PbTiO3（“PMN-PT”），Pb（Zn1 / 3Nb2 / 3）O3-PbTiO3（“PZN-PT”）和Pb（Sc1 / 3Nb2 / 3）O3-PbTiO3（“PSN-PT” 还包括包括多个基于铅的单晶振子的换能器。 在一个实施例中，超声波探头包括一个或多个具有用作发射和/或接收元件的表面的压电元件; 以及设置在元件的相对表面上的电极，并且其中每个基于铅的压电元件如上所述。 此外，本发明包括用于减少杂散模式的改进材料。 此外，本发明包括对角定向的基于铅的换能器。

公开(公告)号：US6137775A

公开(公告)日：2000-10-24

申请号：US1827

申请日：1997-12-31

Applicant: Merwyn C. Bartlett ,  Rajesh Kumar ,  David G. Way

Inventor： Merwyn C. Bartlett ,  Rajesh Kumar ,  David G. Way

IPC: H04Q3/00 ,  G01R31/08

CPC classification number: H04Q3/0079

Abstract: A spare capacity planning tool for planning spare capacity in a transport network during a multiple-span failure following a single failure event. The spare capacity planning tool simulates restoration of a transport network regardless of the sequence of failures. The system and method utilize a permutation reducer to minimize the number of sequences to be verified during simulated or actual restoration activities. The permutation reducer reduces the number of sequences to to during simulated restoration activities to a first order function rather than a factorial function of the number of failed spans.

Abstract translation: 一个备用容量规划工具，用于在单个故障事件发生的多级故障期间规划传输网络中的备用容量。 备用容量规划工具模拟传输网络的恢复，而不管故障顺序如何。 该系统和方法利用置换减少器来最小化在模拟或实际恢复活动期间要验证的序列的数量。 排列减少器将在模拟恢复活动期间的序列数减少到一阶函数，而不是失败跨度数量的阶乘函数。