利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

23 条记录 (耗时 0.028 秒)

    Silicon carbide semiconductor device
    1.
    发明授权
    Silicon carbide semiconductor device 有权
    碳化硅半导体器件

    公开(公告)号：US06573534B1

    公开(公告)日：2003-06-03

    申请号：US09265582

    申请日：1999-03-10

    申请人： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Shoichi Onda ,  Mitsuhiro Kataoka ,  Kunihiko Hara ,  Eiichi Okuno ,  Jun Kojima

    发明人： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Shoichi Onda ,  Mitsuhiro Kataoka ,  Kunihiko Hara ,  Eiichi Okuno ,  Jun Kojima

    IPC分类号： H01L310312

    CPC分类号： H01L29/7828 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7838 ,  Y10S438/931

    摘要： A semiconductor device, comprising: a semiconductor substrate comprising silicon carbide of a first conductivity type; a silicon carbide epitaxial layer of the first conductivity type; a first semiconductor region formed on the semiconductor substrate and comprising silicon carbide of a second conductivity type; a second semiconductor region formed on the first semiconductor region, comprising silicon carbide of the first conductivity type and separated from the semiconductor substrate of the first conductivity type by the first semiconductor region; a third semiconductor region formed on the semiconductor region, connected to the semiconductor substrate and the second semiconductor region, comprising silicon carbide of the first conductivity type, and of higher resistance than the semiconductor substrate; and a gate electrode formed on the third semiconductor region via an insulating layer; wherein the third semiconductor layer is depleted when no voltage is being applied to the gate electrode so that said semiconductor device has a normally OFF characteristic.

    摘要翻译： 一种半导体器件，包括：包含第一导电类型的碳化硅的半导体衬底; 第一导电类型的碳化硅外延层; 形成在所述半导体衬底上并且包括第二导电类型的碳化硅的第一半导体区域; 形成在所述第一半导体区域上的第二半导体区域，包括所述第一导电类型的碳化硅并且通过所述第一半导体区域与所述第一导电类型的半导体衬底分离; 形成在所述半导体区域上的第三半导体区域，与所述半导体衬底和所述第二半导体区域连接，所述第二半导体区域包括所述第一导电型的碳化硅，并且具有比所述半导体衬底更高的电阻; 以及经由绝缘层形成在所述第三半导体区域上的栅电极; 其中当没有电压施加到所述栅电极时，所述第三半导体层被耗尽，使得所述半导体器件具有正常OFF特性。

    Silicon carbide semiconductor device
    2.
    发明授权
    Silicon carbide semiconductor device 有权
    碳化硅半导体器件

    公开(公告)号：US07968892B2

    公开(公告)日：2011-06-28

    申请号：US11882137

    申请日：2007-07-31

    申请人： Jun Kojima ,  Takeshi Endo ,  Eiichi Okuno ,  Yoshihito Mitsuoka ,  Yoshiyuki Hisada ,  Hideo Matsuki

    发明人： Jun Kojima ,  Takeshi Endo ,  Eiichi Okuno ,  Yoshihito Mitsuoka ,  Yoshiyuki Hisada ,  Hideo Matsuki

    IPC分类号： H01L31/0256

    CPC分类号： H01L29/66068 ,  H01L21/02024 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7828

    摘要： A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

    摘要翻译： 碳化硅半导体器件包括：具有主表面和背面的半导体衬底; 设置在主表面上的漂移层; 设置在漂移层上的基极区域; 设置在所述基底区域上的源极区域; 设置在所述漂移层和所述基极区域两者上的表面沟道层，用于在所述源极区域和所述漂移层之间连接; 栅极绝缘膜，设置在所述表面沟道层上并且包括高介电常数膜; 设置在所述栅极绝缘膜上的栅电极; 源电极，其设置在所述源极区域上; 以及设置在所述背面上的背面电极。

    Silicon carbide semiconductor device
    3.
    发明申请
    Silicon carbide semiconductor device 有权
    碳化硅半导体器件

    公开(公告)号：US20070281173A1

    公开(公告)日：2007-12-06

    申请号：US11882137

    申请日：2007-07-31

    申请人： Jun Kojima ,  Takeshi Endo ,  Eiichi Okuno ,  Yoshihito Mitsuoka ,  Yoshiyuki Hisada ,  Hideo Matsuki

    发明人： Jun Kojima ,  Takeshi Endo ,  Eiichi Okuno ,  Yoshihito Mitsuoka ,  Yoshiyuki Hisada ,  Hideo Matsuki

    IPC分类号： B32B9/04

    CPC分类号： H01L29/66068 ,  H01L21/02024 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7828

    摘要： A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

    摘要翻译： 碳化硅半导体器件包括：具有主表面和背面的半导体衬底; 设置在主表面上的漂移层; 设置在漂移层上的基极区域; 设置在所述基底区域上的源极区域; 设置在所述漂移层和所述基极区域两者上的表面沟道层，用于在所述源极区域和所述漂移层之间连接; 栅极绝缘膜，设置在所述表面沟道层上并且包括高介电常数膜; 设置在所述栅极绝缘膜上的栅电极; 源电极，其设置在所述源极区域上; 以及设置在所述背面上的背面电极。

    Silicon carbide semiconductor device and method for manufacturing the same
    5.
    发明授权
    Silicon carbide semiconductor device and method for manufacturing the same 有权
    碳化硅半导体器件及其制造方法

    公开(公告)号：US07365363B2

    公开(公告)日：2008-04-29

    申请号：US11108906

    申请日：2005-04-19

    申请人： Jun Kojima ,  Takeshi Endo ,  Eiichi Okuno ,  Yoshihito Mitsuoka ,  Yoshiyuki Hisada ,  Hideo Matsuki

    发明人： Jun Kojima ,  Takeshi Endo ,  Eiichi Okuno ,  Yoshihito Mitsuoka ,  Yoshiyuki Hisada ,  Hideo Matsuki

    IPC分类号： H01L31/0312

    CPC分类号： H01L29/66068 ,  H01L21/02024 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7828

    摘要： A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

    摘要翻译： 碳化硅半导体器件包括：具有主表面和背面的半导体衬底; 设置在主表面上的漂移层; 设置在漂移层上的基极区域; 设置在所述基底区域上的源极区域; 设置在所述漂移层和所述基极区域两者上的表面沟道层，用于在所述源极区域和所述漂移层之间连接; 栅极绝缘膜，设置在所述表面沟道层上并且包括高介电常数膜; 设置在所述栅极绝缘膜上的栅电极; 源电极，其设置在所述源极区域上; 以及设置在所述背面上的背面电极。

    Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities
    6.
    发明授权
    Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities 有权
    制造具有高活性化杂质的碳化硅半导体器件的方法

    公开(公告)号：US06221700B1

    公开(公告)日：2001-04-24

    申请号：US09362088

    申请日：1999-07-28

    申请人： Eiichi Okuno ,  Jun Kojima

    发明人： Eiichi Okuno ,  Jun Kojima

    IPC分类号： H01L2100

    CPC分类号： H01L29/7827 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7787 ,  H01L29/7828

    摘要： A surface portion of a p type base region is made amorphous as an amorphous layer by implanting nitrogen ions which serve as impurities and ions which do not serve as impurities. After that, the amorphous layer is crystallized to have a specific crystal structure through solid-phase growth while disposing the impurities at lattice positions of the crystal structure. As a result, a surface channel layer is formed with a high activation rate of the impurities.

    摘要翻译： p型基极区域的表面部分通过注入用作杂质的氮离子和不作为杂质的离子而被制成非晶态的非晶层。 此后，非晶层通过固相生长结晶化而具有特定的晶体结构，同时将杂质置于晶体结构的晶格位置。 结果，形成具有高的杂质活化率的表面通道层。

    Silicon carbide semiconductor device and method of fabricating the same
    7.
    发明授权
    Silicon carbide semiconductor device and method of fabricating the same 有权

    公开(公告)号：US06551865B2

    公开(公告)日：2003-04-22

    申请号：US10107174

    申请日：2002-03-28

    申请人： Rajesh Kumar ,  Hiroki Nakamura ,  Jun Kojima

    发明人： Rajesh Kumar ,  Hiroki Nakamura ,  Jun Kojima

    IPC分类号： H01L21332

    CPC分类号： H01L29/8083 ,  H01L29/1608 ,  Y10S438/931

    摘要： Openings are formed in a laminate of a polycrystalline silicon film and an LTO film on a channel layer. While the laminate is used as a mask, impurities are implanted into a place in the channel layer which is assigned to a source region. Also, impurities are implanted into another place in the channel layer which is assigned to a portion of a second gate region. A portion of the polycrystalline silicon film which extends from the related opening is thermally oxidated. The LTO film and the oxidated portion of the polycrystalline silicon film are removed. While a remaining portion of the polycrystalline silicon film is used as a mask, impurities are implanted into a place in the channel layer which is assigned to the second gate region. Accordingly, the source region and the second gate region are formed on a self-alignment basis which suppresses a variation in channel length.

    Device for manufacturing sic single crystal and method for the same
    9.
    发明申请
    Device for manufacturing sic single crystal and method for the same 有权
    制造单晶单晶的方法和方法相同

    公开(公告)号：US20090107394A1

    公开(公告)日：2009-04-30

    申请号：US12289415

    申请日：2008-10-28

    申请人： Yasuo Kitou ,  Jun Kojima

    发明人： Yasuo Kitou ,  Jun Kojima

    IPC分类号： C30B25/00 ,  C23C16/32

    CPC分类号： C30B29/36 ,  C30B25/00 ,  C30B25/02 ,  C30B25/14 ,  Y10T117/10

    摘要： A device for manufacturing a SiC single crystal includes: a raw material gas introduction pipe; a raw material gas heat chamber having a raw material gas supply passage for heating the gas in the passage; a reaction chamber having a second sidewall, an inner surface of which contacts an outer surface of a first sidewall of the heat chamber, and having a bottom, on which a SiC single crystal substrate is arranged; and a discharge pipe in a hollow center of the raw material gas heat chamber. The supply passage is disposed between an outer surface of the discharge pipe and an inner surface of the first sidewall. The discharge pipe discharges a residual gas, which is not used for crystal growth of the SiC single crystal.

    摘要翻译： SiC单晶的制造装置包括：原料气体导入管; 原料气体加热室，具有用于加热通道内的气体的原料气体供给路径; 具有第二侧壁的反应室，其内表面与所述加热室的第一侧壁的外表面相接触，并具有底部，在其上布置有SiC单晶基板; 以及在原料气体加热室的中空中心的排出管。 供给通道设置在排出管的外表面和第一侧壁的内表面之间。 排出管排出不用于SiC单晶的晶体生长的残留气体。