公开(公告)号：US06573534B1

公开(公告)日：2003-06-03

申请号：US09265582

申请日：1999-03-10

申请人： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Shoichi Onda ,  Mitsuhiro Kataoka ,  Kunihiko Hara ,  Eiichi Okuno ,  Jun Kojima

发明人： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Shoichi Onda ,  Mitsuhiro Kataoka ,  Kunihiko Hara ,  Eiichi Okuno ,  Jun Kojima

IPC分类号： H01L310312

CPC分类号： H01L29/7828 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7838 ,  Y10S438/931

摘要： A semiconductor device, comprising: a semiconductor substrate comprising silicon carbide of a first conductivity type; a silicon carbide epitaxial layer of the first conductivity type; a first semiconductor region formed on the semiconductor substrate and comprising silicon carbide of a second conductivity type; a second semiconductor region formed on the first semiconductor region, comprising silicon carbide of the first conductivity type and separated from the semiconductor substrate of the first conductivity type by the first semiconductor region; a third semiconductor region formed on the semiconductor region, connected to the semiconductor substrate and the second semiconductor region, comprising silicon carbide of the first conductivity type, and of higher resistance than the semiconductor substrate; and a gate electrode formed on the third semiconductor region via an insulating layer; wherein the third semiconductor layer is depleted when no voltage is being applied to the gate electrode so that said semiconductor device has a normally OFF characteristic.

摘要翻译： 一种半导体器件，包括：包含第一导电类型的碳化硅的半导体衬底; 第一导电类型的碳化硅外延层; 形成在所述半导体衬底上并且包括第二导电类型的碳化硅的第一半导体区域; 形成在所述第一半导体区域上的第二半导体区域，包括所述第一导电类型的碳化硅并且通过所述第一半导体区域与所述第一导电类型的半导体衬底分离; 形成在所述半导体区域上的第三半导体区域，与所述半导体衬底和所述第二半导体区域连接，所述第二半导体区域包括所述第一导电型的碳化硅，并且具有比所述半导体衬底更高的电阻; 以及经由绝缘层形成在所述第三半导体区域上的栅电极; 其中当没有电压施加到所述栅电极时，所述第三半导体层被耗尽，使得所述半导体器件具有正常OFF特性。

公开(公告)号：US06214108B1

公开(公告)日：2001-04-10

申请号：US09318646

申请日：1999-05-26

申请人： Atsuto Okamoto ,  Naohiro Sugiyama ,  Toshihiko Tani ,  Nobuo Kamiya ,  Hiroaki Wakayama ,  Yoshiaki Fukushima ,  Kazukuni Hara ,  Fusao Hirose ,  Shoichi Onda ,  Kunihiko Hara ,  Takashi Onoda ,  Haruyoshi Kuriyama ,  Takeshi Hasegawa

发明人： Atsuto Okamoto ,  Naohiro Sugiyama ,  Toshihiko Tani ,  Nobuo Kamiya ,  Hiroaki Wakayama ,  Yoshiaki Fukushima ,  Kazukuni Hara ,  Fusao Hirose ,  Shoichi Onda ,  Kunihiko Hara ,  Takashi Onoda ,  Haruyoshi Kuriyama ,  Takeshi Hasegawa

IPC分类号： C30B2502

CPC分类号： C30B23/00 ,  C30B29/36 ,  C30B33/00

摘要： Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened on the surface of the silicon carbide single crystal (SiC substrate) is sealed up with a coating material. Then heat treatment is performed so as to saturate the inside of the micropipe defects with silicon carbide vapors. By this, the micropipe defects existing in the SiC substrate can be closed within the SiC substrate, not in a newly grown layer. Further, the micropipe defects can be efficiently closed by filling the micropipe defects with a silicon carbide material by preliminarily using super critical fluid and the like.

摘要翻译： 存在于碳化硅单晶中的微管缺陷在单晶内闭合。 在碳化硅单晶（SiC衬底）的表面上打开的微管缺陷的至少一部分用涂料密封。 然后进行热处理，以便用碳化硅蒸气使微管缺陷的内部饱和。 由此，存在于SiC衬底中的微管缺陷可以在SiC衬底内封闭，而不是在新生长的层中。 此外，通过预先使用超临界流体等，通过用碳化硅材料填充微管缺陷可以有效地关闭微管缺陷。

公开(公告)号：US06245442B1

公开(公告)日：2001-06-12

申请号：US09084396

申请日：1998-05-27

申请人： Shinichi Towata ,  Nobuo Kamiya ,  Hiroshi Hohjo ,  Naohisa Nishino ,  Tsuyoshi Yamamoto ,  Shoichi Onda

发明人： Shinichi Towata ,  Nobuo Kamiya ,  Hiroshi Hohjo ,  Naohisa Nishino ,  Tsuyoshi Yamamoto ,  Shoichi Onda

IPC分类号： C22C110

CPC分类号： H01L21/4871 ,  B22D19/14 ,  C22C1/1036 ,  H01L23/3733 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  Y10T428/12361 ,  Y10T428/12389 ,  Y10T428/12486 ,  Y10T428/12757 ,  H01L2924/00014 ,  H01L2924/00

摘要： A metal matrix composite casting comprises a metal matrix composite and a processed member inserted in the metal matrix composite by enveloped casting. By the processed member which is easier to process than the metal matrix composite, a processed portion of a predetermined shape can be formed in the metal matrix composite. That is, by a simple processing such that the processed member is removed from the metal matrix composite or the processed portion is formed in the processed member itself, the processed portion having a desired shape can be easily formed in the metal matrix composite.

摘要翻译： 金属基复合材料铸造包括金属基复合材料和通过包封铸造插入金属基复合材料中的加工构件。 通过比金属基复合材料更容易加工的加工构件，可以在金属基复合材料中形成预定形状的加工部分。 也就是说，通过简单的处理使得处理的构件从金属基质复合体中除去，或者加工部分形成在加工构件本身中，可以容易地在金属基质复合材料中形成具有所需形状的加工部分。

公开(公告)号：US06451112B1

公开(公告)日：2002-09-17

申请号：US09686232

申请日：2000-10-12

申请人： Kazukuni Hara ,  Kouki Futatsuyama ,  Shoichi Onda ,  Fusao Hirose ,  Emi Oguri ,  Naohiro Sugiyama ,  Atsuto Okamoto

发明人： Kazukuni Hara ,  Kouki Futatsuyama ,  Shoichi Onda ,  Fusao Hirose ,  Emi Oguri ,  Naohiro Sugiyama ,  Atsuto Okamoto

IPC分类号： C30B2936

CPC分类号： C30B23/00 ,  C30B29/36 ,  Y10T117/10

摘要： A crucible for growing a single crystal therein has a seed crystal attachment portion and a peripheral portion surrounding the seed crystal attachment portion through a gap provided therebetween. The seed crystal attachment portion has a support surface for holding a seed crystal on which the single crystal is to be grown, and the support surface is recessed from a surface of the peripheral portion. The seed crystal is attached to the support surface to cover an entire area of the support surface. Accordingly, no poly crystal is formed on the seed crystal attachment portion, and the single crystal can be grown on the seed crystal with high quality.

摘要翻译： 用于在其中生长单晶的坩埚具有通过其间设置的间隙包围晶种附着部的晶种附着部和周缘部。 晶种附着部分具有用于保持其上生长单晶的晶种的支撑表面，并且支撑表面从周边部分的表面凹陷。 籽晶附着到支撑表面以覆盖支撑表面的整个区域。 因此，在晶种附着部上不形成多晶体，能够以高质量在晶种上生长单晶。

公开(公告)号：US5324929A

公开(公告)日：1994-06-28

申请号：US840916

申请日：1992-02-25

申请人： Manabu Yamada ,  Shoichi Onda ,  Kenichi Hanaki ,  Masashi Harada

发明人： Manabu Yamada ,  Shoichi Onda ,  Kenichi Hanaki ,  Masashi Harada

IPC分类号： G01D5/165 ,  G01S3/783 ,  H01L31/02 ,  H01L31/11 ,  H01J40/14

CPC分类号： G01S3/783 ,  G01D5/165 ,  H01L31/02024 ,  H01L31/11

摘要： A device for detecting direction, height and intensity of a light which facilitates detection and provides high accuracy. The device includes a glass substrate, on which a resistant layer for detecting the X coordinate position, a photoconductive layer utilizing the photoconducting effect of a photoelectric converting layer, and a resistant layer of metallic electrode resistor body for detecting the Y coordinate position, laminated in order. The resistant layers are provided respective two lead electrodes X, X' and Y, Y'. By applying 5V and 0V, for example, to X and X', a voltage Vx corresponding to the position where the light is irradiated can be directly obtained through Y or Y'. Namely, the X coordinate position of the point where the light passes can be easily and accurately detected. By applying +5V and 0V for Y and Y', Y coordinate of the light irradiated point can be obtained, and by applying the same potential to X and X', light intensity can be obtained.

摘要翻译： 用于检测光的方向，高度和强度的装置，其便于检测并提供高精度。 该装置包括玻璃基板，用于检测X坐标位置的阻挡层，利用光电转换层的光导效应的光电导层和用于检测Y坐标位置的金属电极电阻体的电阻层，层叠在 订购。 电阻层分别设置有两个引线电极X，X'和Y，Y'。 通过对X和X'施加5V和0V，可以通过Y或Y'直接获得与照射光的位置相对应的电压Vx。 也就是说，可以容易且精确地检测光通过的点的X坐标位置。 通过对Y和Y'应用+ 5V和0V，可以获得光照射点的Y坐标，并且通过对X和X'施加相同的电位，可以获得光强度。

公开(公告)号：US6133587A

公开(公告)日：2000-10-17

申请号：US23280

申请日：1998-02-13

申请人： Yuichi Takeuchi ,  Takeshi Miyajima ,  Norihito Tokura ,  Hiroo Fuma ,  Toshio Murata ,  Takamasa Suzuki ,  Shoichi Onda

发明人： Yuichi Takeuchi ,  Takeshi Miyajima ,  Norihito Tokura ,  Hiroo Fuma ,  Toshio Murata ,  Takamasa Suzuki ,  Shoichi Onda

IPC分类号： H01L21/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/78 ,  H01L31/0312

CPC分类号： H01L29/7813 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7838 ,  H01L29/0696

摘要： A n.sup.- -type source region 5 is formed on a predetermined region of the surface layer section of the p-type silicon carbide semiconductor layer 3 of a semiconductor substrate 4. A low-resistance p-type silicon carbide region 6 is formed on a predetermined region of the surface layer section in the p-type silicon carbide semiconductor layer 3. A trench 7 is formed in a predetermined region in the n.sup.+ -type source region 5, which trench 7 passes through the n.sup.+ -type source region 5 and the p-type silicon carbide semiconductor layer 3, reaching the n.sup.- -type silicon carbide semiconductor layer 2. The trench 7 has side walls 7a perpendicular to the surface of the semiconductor substrate 4 and a bottom side 7b parallel to the surface of the semiconductor substrate 4. The hexagonal region surrounded by the side walls 7a of the trench 7 is an island semiconductor region 12. A high-reliability gate insulating film 8 is obtained by forming a gate insulating layer on the side walls 7a which surround the island semiconductor region 12.

摘要翻译： n型源极区5形成在半导体衬底4的p型碳化硅半导体层3的表层部分的预定区域上。低电阻p型碳化硅区6形成在 在p型碳化硅半导体层3中的表层部分的预定区域。沟槽7形成在n +型源极区域5中的预定区域中，沟槽7通过n +型源极区域5，并且 p型碳化硅半导体层3，到达n型碳化硅半导体层2.沟槽7具有垂直于半导体衬底4的表面的侧壁7a和平行于半导体衬底的表面的底侧7b 由沟槽7的侧壁7a包围的六边形区域是岛状半导体区域12.通过在侧壁7a上形成栅极绝缘层，形成高可靠性栅极绝缘膜8， 岛半导体区域12。

公开(公告)号：US5825443A

公开(公告)日：1998-10-20

申请号：US802277

申请日：1997-02-19

申请人： Eishi Kawasaki ,  Tsukasa Koumura ,  Shoichi Onda ,  Tadao Ohoka

发明人： Eishi Kawasaki ,  Tsukasa Koumura ,  Shoichi Onda ,  Tadao Ohoka

IPC分类号： G02F1/13 ,  G02F1/1335 ,  G02F1/13357 ,  H04N9/31

CPC分类号： G02F1/133621 ,  H04N9/3108 ,  G02F1/133526 ,  G02F2203/02 ,  G02F2203/03

摘要： White light projected from a white light source is divided into three light beams of primary colors, i.e., red, green and blue by a dichroic mirror. Three light beams projected from the dichroic mirror are made incident upon a micro-lens array and reflected on and modulated in a liquid crystal panel disposed beneath the micro-lens array. The liquid crystal panel is driven by a driver circuit which supplies color signals to the panel, thereby modulating the light beams in the panel. The modulated light beams are projected from the micro-lens array to a schlieren diaphragm which eliminates scattered light components from the light beams. The light beams then enter into a projection lens and display color images on the screen. Since light beams constituting a picture element consisting of red, green and blue colors are projected from a single micro-lens of the micro-lens array, a color image displayed on the screen has no blur among three primary colors. Since the three primary color beams are projected on the liquid crystal panel and modulated therein, only a single liquid crystal panel having no color filters is used in the display device.

摘要翻译： 从白色光源投影的白光通过二向色镜被分为原色的三个光束，即红色，绿色和蓝色。 从分色镜投影的三个光束入射到微透镜阵列上并在布置在微透镜阵列下方的液晶面板中反射并调制在其上。 液晶面板由向面板提供彩色信号的驱动电路驱动，从而调制面板中的光束。 调制后的光束从微透镜阵列投射到去除来自光束的散射光分量的分光膜片。 然后光束进入投影透镜并在屏幕上显示彩色图像。 由于构成由红色，绿色和蓝色构成的像元的光束从微透镜阵列的单个微透镜投影，所以在屏幕上显示的彩色图像在三原色之间没有模糊。 由于三原色光束投影在液晶面板上并被调制，所以在显示装置中仅使用没有滤色器的单个液晶面板。

公开(公告)号：US07147714B2

公开(公告)日：2006-12-12

申请号：US10832396

申请日：2004-04-27

申请人： Masami Naito ,  Kazukuni Hara ,  Fusao Hirose ,  Shoichi Onda

发明人： Masami Naito ,  Kazukuni Hara ,  Fusao Hirose ,  Shoichi Onda

IPC分类号： C30B23/00

CPC分类号： C30B25/02 ,  C30B29/36 ,  Y10S117/906 ,  Y10T428/131

摘要： When a SiC substrate is heated up to around 1800°C., sublimation of SiC occurs from the SiC substrate. Moreover, temperature of the front surface of the SiC substrate is lower than that of the back surface of the SiC substrate. Therefore, sublimation gas sublimed from a back-surface vicinity of the substrate, where temperature is high, moves to a front-surface vicinity of the substrate, where temperature is low, through the hollow micro-pipe defect. Epitaxial growth proceeds on the front surface of the substrate while the sublimation gas is recrystallized at the front-surface vicinity of the substrate, so that the micro-pipe defect is occluded.

摘要翻译： 当SiC衬底被加热到约1800℃时，SiC的升华从SiC衬底发生。 此外，SiC衬底的前表面的温度低于SiC衬底的背面的温度。 因此，从温度高的基板的背面附近升华​​的升华气体通过中空微管缺陷移动到温度低的基板的前表面附近。 外延生长在基板的前表面上进行，同时升华气体在基板的前表面再结晶，从而使微管缺陷被堵塞。

公开(公告)号：US06830618B2

公开(公告)日：2004-12-14

申请号：US09985120

申请日：2001-11-01

申请人： Kazukuni Hara ,  Masao Nagakubo ,  Shoichi Onda

发明人： Kazukuni Hara ,  Masao Nagakubo ,  Shoichi Onda

IPC分类号： C30B3500

CPC分类号： C30B25/00 ,  C30B29/36 ,  Y10S117/90 ,  Y10T117/10

摘要： A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. A first heat insulator is provided at a halfway portion of the inlet conduit. With these heat insulators, a temperature gradient occurs in the inlet conduit at a portion thereof that is closer to the crucible. A mixture gas is introduced into the crucible. The mixture gas is heated up gradually when passing through the inlet conduit and is introduced into the crucible to form SiC single crystals in high quality.

摘要翻译： 具有第一和第二圆柱体的坩埚设置在下腔室中。 基座设置在第一构件的内部，并且晶种固定到基座。 在入口导管和坩埚之间设置第二隔热件。 第一隔热件设置在入口导管的中间部分。 利用这些隔热绝热体，入口导管在其更接近坩埚的部分处发生温度梯度。 将混合气体引入坩埚中。 混合气体在通过入口导管时逐渐加热，并被引入坩埚中以形成高质量的SiC单晶。

公开(公告)号：US06770137B2

公开(公告)日：2004-08-03

申请号：US09985354

申请日：2001-11-02

申请人： Kazukuni Hara ,  Masao Nagakubo ,  Shoichi Onda

发明人： Kazukuni Hara ,  Masao Nagakubo ,  Shoichi Onda

IPC分类号： C30B2306

CPC分类号： C30B25/00 ,  C30B29/36 ,  Y10T117/1004

摘要： A crucible has first member and second cylindrical body, and is disposed in a lower chamber. The fist member is disposed in the second cylindrical body so as to define a gas flow path formed therebetween as a gap. A pedestal is disposed inside the first member. A seed crystal is fixed to the pedestal. SiC single crystals are formed on the pedestal by introducing a mixture gas through an inlet conduit. During growth of the SiC single crystals, conductance in introduction of the mixture gas into the crucible is larger than that in exhaust of the mixture gas, so that pressure of the mixture gas in the crucible is larger than that of the mixture gas after exhausted from the crucible.

摘要翻译： 坩埚具有第一构件和第二圆筒体，并且设置在下室中。 第一构件设置在第二圆筒体中，以便形成在它们之间的气体流路作为间隙。 底座设置在第一构件的内部。 晶种固定在基座上。 通过引入混合气体通过入口导管在基座上形成SiC单晶。 在SiC单晶生长过程中，将混合气体引入坩埚中的导电率大于混合气体排气时的导电率，坩埚中混合气体的压力大于排出后的混合气体压力 坩埚。