公开(公告)号：US12046671B2

公开(公告)日：2024-07-23

申请号：US17569527

申请日：2022-01-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Che-Hua Chang ,  Shin-Hung Li ,  Tsung-Yu Yang ,  Ruei-Jhe Tsao

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7825 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/42368 ,  H01L29/66704

Abstract: A semiconductor device includes a semiconductor substrate, a trench, and a gate structure. The trench is disposed in the semiconductor substrate. The gate structure is disposed on the semiconductor substrate. The gate structure includes a gate electrode, a first gate oxide layer, and a second gate oxide layer. A first portion of the gate electrode is disposed in the trench, and a second portion of the gate electrode is disposed outside the trench. The first gate oxide layer is disposed between the gate electrode and the semiconductor substrate. At least a portion of the first gate oxide layer is disposed in the trench. The second gate oxide layer is disposed between the second portion of the gate electrode and the semiconductor substrate in a vertical direction. A thickness of the second gate oxide layer is greater than a thickness of the first gate oxide layer.

公开(公告)号：US12040392B2

公开(公告)日：2024-07-16

申请号：US18075427

申请日：2022-12-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wen Su ,  Ming-Hua Chang ,  Shui-Yen Lu

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

CPC classification number: H01L29/7786 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7787

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a patterned mask on the buffer layer; using the patterned mask to remove the buffer layer for forming ridges and a damaged layer on the ridges; removing the damaged layer; forming a barrier layer on the ridges; and forming a p-type semiconductor layer on the barrier layer.

公开(公告)号：US12040370B2

公开(公告)日：2024-07-16

申请号：US17376151

申请日：2021-07-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wei-Cheng Hung ,  Yu-Jen Liu

IPC: H01L21/8234 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/42372 ,  H01L21/823437 ,  H01L29/78

Abstract: The invention provides a semiconductor structure, the semiconductor structure includes a substrate, a gate structure which extends along a first direction, and a plurality of supporting patterns which are separated from each other and arranged along a second direction which is perpendicular to the first direction.

公开(公告)号：US12040354B2

公开(公告)日：2024-07-16

申请号：US18119009

申请日：2023-03-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Teng-Chuan Hu ,  Chu-Fu Lin ,  Chun-Hung Chen

IPC: H01L21/02 ,  H01L49/02

CPC classification number: H01L28/91

Abstract: A capacitor structure comprises a substrate having a first side, a second side opposite to the first side and an upper surface corresponding to the first side; a plurality of first trenches formed on the first side of the substrate, disposed along a first direction and a second direction parallel to the upper surface, and penetrating the substrate along a third direction, the first direction, the second direction and the third direction orthogonal to each other; a plurality of second trenches formed on the second side of the substrate and penetrating the substrate along the third direction, the first trenches and the second trenches separated from each other in the first direction; a first capacitor extending along the first side and into the first trenches; and a second capacitor extending along the second side and into the second trenches.

公开(公告)号：US20240237335A9

公开(公告)日：2024-07-11

申请号：US17994009

申请日：2022-11-25

Applicant: United Microelectronics Corp.

Inventor： Yu-Jen Yeh

IPC: H01L29/76 ,  H01L29/423

CPC classification number: H01L27/11553 ,  H01L29/42328

Abstract: Provided are a flash memory and a manufacturing method thereof. The flash memory includes a floating gate disposed in a substrate, a first, a second and a third dielectric layers, a source region, a drain region, an erase gate on the second dielectric layer, and a select gate. The first dielectric layer is disposed between the floating gate and the substrate. The second dielectric layer covers the exposed surface of the floating gate. The source region is disposed in the substrate at one side of the floating gate and in contact with the first dielectric layer. The drain region is disposed in the substrate at another side of the floating gate and separated from the first dielectric layer. The select gate is disposed on the substrate between the floating gate and the drain region. The third dielectric layer is disposed between the select gate and the substrate.

公开(公告)号：US20240234572A1

公开(公告)日：2024-07-11

申请号：US18108019

申请日：2023-02-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Liang-An Huang ,  Ming-Hua Tsai ,  Wen-Fang Lee ,  Chin-Chia Kuo ,  Jung Han ,  Chun-Lin Chen ,  Ching-Chung Yang ,  Nien-Chung Li

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/7835 ,  H01L29/1033 ,  H01L29/42364 ,  H01L29/7801

Abstract: An extended drain metal oxide semiconductor transistor includes a substrate. A gate is disposed on the substrate. A source doped region is disposed in the substrate at one side of the gate. A drain doped region is disposed in the substrate at another side of the gate. A thin gate dielectric layer is disposed under the gate. A thick gate dielectric layer is disposed under the gate. The thick gate dielectric layer extends from the bottom of the gate to contact the drain doped region. A second conductive type first well is disposed in the substrate and surrounds the source doped region and the drain doped region. A deep well is disposed within the substrate and surrounds the second conductive type first well.

公开(公告)号：US20240234539A9

公开(公告)日：2024-07-11

申请号：US18395657

申请日：2023-12-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/7786

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

公开(公告)号：US20240234350A9

公开(公告)日：2024-07-11

申请号：US17989633

申请日：2022-11-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Purakh Raj Verma ,  Ching-Yang Wen ,  XINGXING CHEN

IPC: H01L23/00 ,  H01L25/16 ,  H01L27/12 ,  H01L49/02

CPC classification number: H01L24/08 ,  H01L24/16 ,  H01L25/16 ,  H01L27/1203 ,  H01L28/90 ,  H01L2224/08145 ,  H01L2224/16227

Abstract: A semiconductor device includes a first wafer having a deep trench capacitor and a second wafer bonded to the first wafer, in which the second wafer includes a first active device on a first silicon-on-insulator (SOI) substrate and a first metal interconnection connected to the first active device and the deep trench capacitor. The first wafer further includes the deep trench capacitor disposed in a substrate, a first inter-layer dielectric (ILD) layer on the deep trench capacitor, a first inter-metal dielectric (IMD) layer on the first ILD layer, and a second metal interconnection in the first ILD layer and the first IMD layer.

公开(公告)号：US20240222437A1

公开(公告)日：2024-07-04

申请号：US18608890

申请日：2024-03-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Wen-Jung Liao

IPC: H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/2003 ,  H01L29/66431 ,  H01L29/7786

Abstract: A semiconductor device includes a III-V compound semiconductor layer, a III-V compound barrier layer, a gate trench, and a p-type doped III-V compound layer. The III-V compound barrier layer is disposed on the III-V compound semiconductor layer. The gate trench is disposed in the III-V compound barrier layer. The p-type doped III-V compound layer is disposed in the gate trench, and a top surface of the p-type doped III-V compound layer and a top surface of the I-V compound barrier layer are substantially coplanar.

公开(公告)号：US20240222369A1

公开(公告)日：2024-07-04

申请号：US18098710

申请日：2023-01-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Peng-Hsiu Chen ,  Su-Ming Hsieh ,  Ying-Ren Chen

IPC: H01L27/08 ,  H01L29/66 ,  H01L29/93

CPC classification number: H01L27/0808 ,  H01L29/66174 ,  H01L29/93

Abstract: The invention provides a layout pattern of a semiconductor varactor, which comprises a plurality of varactor units arranged on a substrate, wherein each varactor unit comprises a plurality of fin structures arranged in parallel with each other, a plurality of gate structures arranged in parallel with each other, located on the substrate and spanning the fin structures, and a gate metal layer electrically connected with the plurality of gate structures.