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公开(公告)号：US20090125787A1
公开(公告)日：2009-05-14
申请号：US12083373
申请日：2006-10-17
CPC分类号： G11C11/16 , G06F11/1044 , G06F11/1076 , G11C11/1653 , G11C11/1673 , G11C11/1675 , G11C2029/0411 , G11C2211/5641
摘要： An operation method of a MRAM of the present invention stores in memory arrays, error correction codes, each of which comprises of symbols, each of which comprises bits, and to which an error correction is possible in units of symbols. In the operation method, the symbols are read by using the reference cells different from each other. Moreover, when a correctable error is detected in a read data of the error correction code from data cells corresponding to an input address, (A) a data in the data cell corresponding to an error bit is corrected, for a first error symbol as an error pattern of one bit, and (B) a data in the reference cell that is used to read a second error symbol is corrected for a second error symbol as en error pattern of the bits.
摘要翻译： 本发明的MRAM的操作方法存储在存储器阵列中，每个都包括符号，每个符号包括位，并且可以以符号为单位进行纠错。 在操作方法中，通过使用彼此不同的参考单元来读取符号。 此外，当在对应于输入地址的数据单元的错误校正码的读取数据中检测到可校正错误时，（A）对与错误位对应的数据单元中的数据进行校正，对于第一错误符号，作为 一个比特的错误模式和（B）用于读取第二错误符号的参考小区中的数据被校正为第二个错误符号作为比特的错误模式。
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公开(公告)号：US20090122597A1
公开(公告)日：2009-05-14
申请号：US12089090
申请日：2006-09-29
IPC分类号： G11C11/02 , G11C11/14 , G11C11/416
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： An MRAM is provided with a memory main body (2) having at least one cell array, and a magnetic field detecting section (4) which detects a magnetic field in the vicinity of the memory main body (2) and outputs the detection signal to the memory main body (2). In the cell array, a memory main body (2), which has a plurality of magnetic memory cells including a multilayer ferri-structure as a free layer, stops a prescribed operation of the memory main body (2), based on the detection signal.
摘要翻译： MRAM具有至少一个单元阵列的存储器主体（2）和检测存储器主体（2）附近的磁场的磁场检测部（4），并将检测信号输出到 存储器主体（2）。 在单元阵列中，具有包括多层铁结构的多个磁存储单元作为自由层的存储器主体（2）基于检测信号停止存储器主体（2）的规定的操作 。
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93.发明申请Toggle Magnetic Random Access Memory and Write Method of Toggle Magnetic Random Access Memory 有权切换磁性随机存取存储器和切换磁性随机存取存储器的写入方法公开(公告)号：US20090010044A1
公开(公告)日：2009-01-08
申请号：US11815720
申请日：2006-02-08
CPC分类号： G11C7/1027 , G11C11/1653 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , G11C11/1693
摘要： A toggle magnetic random access memory includes a first memory array, a second memory array and a controller. The first memory array includes a plurality of first memory cells including magnetoresistive elements. The second memory array includes a plurality of second memory cells including magnetoresistive elements and differs from the first memory array in write wirings used for writing. The controller controls the first memory array and the second memory array such that a first state in which a first burst write operation in the first memory array is executed and a second state in which a second burst write operation in the second memory array is executed are alternately executed in a continuous burst write mode. Accordingly, the continuous burst write operation can be executed at the high speed without any drop in the reliability and any increase in the circuit area.
摘要翻译： 切换磁性随机存取存储器包括第一存储器阵列，第二存储器阵列和控制器。 第一存储器阵列包括多个包括磁阻元件的第一存储单元。 第二存储器阵列包括多个包括磁阻元件的第二存储单元，并且与用于写入的写配线中的第一存储器阵列不同。 控制器控制第一存储器阵列和第二存储器阵列，使得执行第一存储器阵列中的第一突发写入操作的第一状态和其中执行第二存储器阵列中的第二突发写入操作的第二状态是 以连续的突发写入模式交替执行。 因此，可以高速执行连续脉冲串写入操作，而不会降低可靠性和电路面积的任何增加。
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公开(公告)号：US07474422B2
公开(公告)日：2009-01-06
申请号：US10053727
申请日：2002-01-24
申请人： Takeshi Honda , Akihiro Takahashi
发明人： Takeshi Honda , Akihiro Takahashi
摘要： A data transmission apparatus transmits, in response to a permission signal received from a higher-level data receiver, a required amount of data to the data receiver in a burst. The required amount of data is determined by data transmission control. Data transmission between the apparatus and the data receiver is effected at a preselected timing in such a manner as to absorb a difference between the amount of data to be transmitted over a preselected management time period and the data amount indicated by an expected control value. For this purpose, the apparatus calculates an adequate amount of data to be transmitted over the management time period as a unit amount. The apparatus then manages the maximum amount of data to be transmitted over the management time period for thereby leveling the amounts of data transmitted. This successfully enhances accurate data transmission.
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95.发明授权公开(公告)号：US07414881B2
公开(公告)日：2008-08-19
申请号：US11547123
申请日：2005-03-24
IPC分类号： G11C11/00
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G11C11/15 , H01F13/00 , H01F41/303 , H01L43/08
摘要： A magnetization direction control method for controlling magnetization directions of first to third ferromagnetic layers (11-13) within a synthetic antiferromagnet structure (10A) having the first to the third ferromagnetic layers (11-13) and first and second non-magnetic layers (21, 22) interposed therebetween, without coupling antiferromagnetic material. The magnetization direction control method is composed of steps of (a) applying an external magnetic field HE to the synthetic antiferromagnet structure (10A) so as to direct the magnetizations of the first to third ferromagnetic layers in the same direction, and (b) reducing the external magnetic field to reverse the magnetization of one or some of the first to third ferromagnetic layers (11-13). The synthetic antiferromagnet structure (10A) is configured so that the magnetization of the first ferromagnetic layer (11) is reversed more easily than magnetizations of the other ferromagnetic layers in a state in which the magnetizations of the first to third ferromagnetic layers (11-13) are directed in the same direction.
摘要翻译： 一种用于控制具有第一至第三铁磁层（11-13）和第一和第二非磁性层（11-13）的合成反铁磁体结构（10A）内的第一至第三铁磁层（11-13）的磁化方向的磁化方向控制方法， （21,22），而不耦合反铁磁材料。 磁化方向控制方法包括以下步骤：（a）向合成的反铁磁体结构（10A）施加外部磁场H E，以便将第一至第三铁磁层的磁化引导到 相同的方向，和（b）减小外部磁场以反转第一至第三铁磁层（11-13）中的一个或一些的磁化。 合成反铁磁体结构（10A）被配置为使得第一铁磁层（11）的磁化在第一至第三铁磁性层（11〜11）的磁化的状态下比其他铁磁性层的磁化更容易反转， 13）指向相同的方向。
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公开(公告)号：US20080094880A1
公开(公告)日：2008-04-24
申请号：US11661205
申请日：2005-08-26
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , H01L27/228 , H01L43/08
摘要： A magneto-resistance element includes a free layer, a fixed layer and a non-magnetic layer interposed between the free layer and the fixed layer. The free layer has a first magnetic layer, a second magnetic layer, a third magnetic layer, a first non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, and a second non-magnetic layer interposed between the second magnetic layer and the third magnetic layer. The first magnetic layer, the second magnetic layer and the third magnetic layer are coupled such that spontaneous magnetizations have a helical structure.
摘要翻译： 磁阻元件包括置于自由层和固定层之间的自由层，固定层和非磁性层。 自由层具有第一磁性层，第二磁性层，第三磁性层，介于第一磁性层和第二磁性层之间的第一非磁性层，以及介于第二磁性层之间的第二非磁性层 和第三磁性层。 第一磁性层，第二磁性层和第三磁性层被耦合，使得自发磁化具有螺旋结构。
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公开(公告)号：US07361744B2
公开(公告)日：2008-04-22
申请号：US11193655
申请日：2005-07-28
申请人： Takeshi Honda , Akira Okuno , Masanori Izumi , Xiaoliu Li
发明人： Takeshi Honda , Akira Okuno , Masanori Izumi , Xiaoliu Li
CPC分类号： C07H15/203 , C07H17/02
摘要： Compounds having the formula (I): wherein A represents a group such as a cyclic group, R1 and R2 represent groups such as alkyl groups or hydroxymethyl groups, and n represents 1 or 2, or pharmacologically acceptable salts thereof or pharmacologically acceptable esters thereof have superior activity and stability, and are useful for the treatment and/or prevention of diabetes mellitus, or the like.
摘要翻译： 具有式（I）的化合物：其中A表示诸如环状基团的基团，R 1和R 2表示例如烷基或羟甲基的基团，n 代表1或2，或其药学上可接受的盐或其药理学上可接受的酯具有优异的活性和稳定性，并且可用于治疗和/或预防糖尿病等。
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公开(公告)号：US07301829B2
公开(公告)日：2007-11-27
申请号：US10541645
申请日：2003-12-26
IPC分类号： G11C5/14
CPC分类号： G11C11/15
摘要： A semiconductor memory device in which information is written into a storage element by flowing current. The semiconductor memory device has a shortened write speed and reduced power consumption by preventing parasitic capacitors from prolonging the time required for a write current to reach a predetermined value. The semiconductor memory device includes storage elements for storing information, a constant current source for writing information into the storage element by flowing current, and a boost circuit for charging parasitic capacitors by a time when an amount of a current flowed by the constant current source reaches an amount of a current required to write information into the storage element, at a predetermined position related to the storage element.
摘要翻译： 通过流动电流将信息写入存储元件的半导体存储器件。 通过防止寄生电容器延长写入电流达到预定值所需的时间，半导体存储器件具有缩短的写入速度和降低的功耗。 半导体存储器件包括用于存储信息的存储元件，用于通过流动电流将信息写入存储元件的恒定电流源，以及当恒定电流源流过的电流达到的时间的用于对寄生电容器充电的升压电路 在与存储元件相关的预定位置处将信息写入存储元件所需的电流量。
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99.发明授权Semiconductor memory device having a voltage-controlled-oscillator-based readout circuit 有权具有基于压控振荡器的读出电路的半导体存储器件公开(公告)号：US07292471B2
公开(公告)日：2007-11-06
申请号：US11384920
申请日：2006-03-20
IPC分类号： G11C11/15
CPC分类号： G11C13/004 , G11C7/06 , G11C11/16 , G11C11/1673 , G11C13/0061 , G11C2013/0047 , G11C2013/0054 , G11C2013/0057 , G11C2207/066
摘要： By first readout, the current input from a selected cell is converted by a preamplifier and a VCO into pulses of a frequency inversely proportionate to the current value, and the number of the pulses within a preset time interval is counted by a counter 5 so as to be stored in a readout value register. A selected cell is then written to one of two storage states, and second readout is then carried out. The storage state of the selected cell is verified by comparing a count value of the counter for the second readout, a count value for the first readout as stored in a readout value register and a reference value stored in a reference value register to one another. By the use of the VCO, the integrating capacitor for the current or the generation of a reference pulse may be eliminated.
摘要翻译： 通过第一读出，来自所选单元的电流输入由前置放大器和VCO转换成与当前值成反比的频率的脉冲，并且通过计数器5对预设时间间隔内的脉冲数进行计数，以便 存储在读出值寄存器中。 然后将选定的单元写入两个存储状态之一，然后执行第二次读出。 通过将存储在读出值寄存器中的第一次读出的计数值和存储在参考值寄存器中的参考值彼此进行比较来验证所选单元的存储状态。 通过使用VCO，可以消除用于电流或产生参考脉冲的积分电容器。
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公开(公告)号：US20070201168A1
公开(公告)日：2007-08-30
申请号：US11547123
申请日：2005-03-24
IPC分类号： G11B5/33
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G11C11/15 , H01F13/00 , H01F41/303 , H01L43/08
摘要： There is provided a magnetization direction control method for controlling magnetization directions of first to third ferromagnetic layers (11-13) within a synthetic antiferromagnet structure (10A) having the first to the third ferromagnetic layers (11-13) and first and second non-magnetic layers (21, 22) interposed therebetween, without coupling antiferromagnetic material. The magnetization direction control method is composed of steps of (a) applying an external magnetic field HE to the synthetic antiferromagnet structure (10A) so as to direct the magnetizations of the first to third ferromagnetic layers in the same direction, and (b) reducing the external magnetic field to reverse the magnetization of one or some of the first to third ferromagnetic layers (11-13). The synthetic antiferromagnet structure (10A) is configured so that the magnetization of the first ferromagnetic layer (11) is reversed more easily than magnetizations of the other ferromagnetic layers in a state in which the magnetizations of the first to third ferromagnetic layers (11-13) are directed in the same direction.
摘要翻译： 提供了一种用于控制具有第一至第三铁磁层（11-13）的合成反铁磁体结构（10A）内的第一至第三铁磁层（11-13）的磁化方向的磁化方向控制方法，以及第一和第二非铁磁层 - 磁性层（21,22），其间没有耦合反铁磁材料。 磁化方向控制方法包括以下步骤：（a）向合成的反铁磁体结构（10A）施加外部磁场H E，以便将第一至第三铁磁层的磁化引导到 相同的方向，和（b）减小外部磁场以反转第一至第三铁磁层（11-13）中的一个或一些的磁化。 合成反铁磁体结构（10A）被配置为使得第一铁磁层（11）的磁化在第一至第三铁磁性层（11〜11）的磁化的状态下比其他铁磁性层的磁化更容易反转， 13）指向相同的方向。
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