摘要:
A file system program that controls a processor to create an attribute information area in which a registered keyword as metadata of the data attached to the file; wherein the file system program comprises: a file access control module that controls access to the file; and a file search module that searches for the file using an inputted keyword, wherein the file search module comprises: an attribute information search module that searches for a file by comparing the registered keyword and the inputted keyword; and an entire document search module that searches for a file by comparing the entire file and the inputted keyword, and wherein the file access control module comprises an. attribute information change module that changes the registered keyword based on a result of the search by the entire document search module.
摘要:
To provide a database which has plural log storage areas, and eliminates the sort in the restoration process by means of the application of logs, thereby carrying out the restoration quickly. A management server allocates DB servers to a corresponding one of plural data storage areas so as to access the corresponding one. The DB servers store data to the allocated data storage areas. When the data is referenced or updated, a log representing a data change history is stored in preset log areas for each data server. When the management server transmits a notification to change the data storage areas, area remapping logs are stored in log areas.
摘要:
A conventional storage system immediately executes a received I/O command because of importance of response time. Provided is a storage system which is coupled to a network and executes an I/O command received from at least one host computer through the network, in which: the storage system holds judgment information including predetermined conditions set therein, and upon reception of the I/O command, the processor judges whether the received I/O command satisfies the predetermined conditions or not based on the judgment information, queues a plurality of I/O commands that satisfy the predetermined conditions, rearranges the plurality of queued I/O commands, executes the plurality of queued I/O commands in a rearranged order, and executes I/O commands that do not satisfy the predetermined conditions in a received order.
摘要:
The driving mechanism has an instrument body formed with a recording medium inserting slot for inserting a recording medium into the instrument body. The driving mechanism moves a first operation unit and a second operation unit between a first position for covering the recording medium inserting slot and a second position for exposing the recording medium inserting slot. The driving mechanism includes a first turnable supporting member turnably fitted to the instrument body for supporting the first operation unit, a first drive device for turning the first turnable supporting member, a second supporting member for supporting the second operation unit, a second turnable supporting member turnably fitted to the instrument body for supporting the second operation unit, and a second drive device for turning the second turnable supporting member. The second drive device supports the second supporting member movably in directions along which the recording medium is inserted and removed through the recording medium inserting slot of the instrument body. The first drive device turns the first turnable supporting member to move the first operation unit between the first position and the second position. The second drive device moves the second supporting member and turns the second turnable supporting member to move the second operation unit between the first position and the second position.
摘要:
A trench isolation region is formed in a surface region of a semiconductor substrate to form a MOS type element region. A mask layer having an opening portion is formed on the semiconductor layer, the opening portion continuously ranging on the entire surface of the MOS type element region and on part of the trench isolation region provided around the MOS type element region. A first impurity ion is implanted into the entire surface via the mask layer to form a peak of the impurity profile is situated in the semiconductor layer under the bottom surface of the shallow trench isolation region. A second impurity ion is implanted into the entire surface via the mask layer to form a peak of the impurity profile is situated on the midway of the depth direction of the trench isolation region. Then, the first and second impurity ions are activated.
摘要:
A plasma CVD apparatus comprises an anode electrode and a cathode electrode, and is for forming a thin film on a substrate by performing plasma discharge between the anode electrode and the cathode electrode, comprising: a substrate holder disposed between the anode electrode and the cathode electrode; and one conductive member disposed between the substrate holder and one electrode of either the anode electrode or the cathode electrode, wherein the substrate holder supports the substrate, the one conductive member is provided between the one electrode and the substrate holder so as to substantially cover an entire space between the one electrode and the substrate holder, and the one conductive member is electrically connected to the one electrode and the substrate holder.
摘要:
An information recording and reproducing apparatus performs information recording and reproducing on an optical disc having a recording track wobbled by a predetermined frequency. The apparatus includes an optical pickup which irradiates a laser light on the optical disc and receives the laser light reflected by the optical disc to output an electric signal corresponding to the laser light, a push-pull signal generating unit which includes a sample-hold unit and generates the sample-hold push-pull signal and the non-sample-hold push-pull signal from the electric signal, a sample-hold circuit which samples and holds the push-pull signal, a recording clock generating unit which generates a recording clock synchronized with the wobble signal based on the sample-hold push-pull signal during recording and based on the non-sample-hold push-pull signal during reproduction, and a phase adjusting unit which adjusts the phases of the non-sample-hold push-pull signal and the sample-hold push-pull signal.
摘要:
A file system program that controls a processor to create an attribute information area in which a registered keyword as metadata of the data attached to the file; wherein the file system program comprises: a file access control module that controls access to the file; and a file search module that searches for the file using an inputted keyword, wherein the file search module comprises: an attribute information search module that searches for a file by comparing the registered keyword and the inputted keyword; and an entire document search module that searches for a file by comparing the entire file and the inputted keyword, and wherein the file access control module comprises an. attribute information change module that changes the registered keyword based on a result of the search by the entire document search module.
摘要:
A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging a reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas containing N and H and then purging the reaction space; (vi) repeating steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer.
摘要:
A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging a reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas containing N and H and then purging the reaction space; (vi) repeating steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer.