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公开(公告)号：US07195673B2
公开(公告)日：2007-03-27
申请号：US10735621
申请日：2003-12-16
IPC分类号： C23C16/00
CPC分类号： H01J37/32532 , C23C16/4583 , C23C16/5096
摘要： A plasma CVD apparatus comprises an anode electrode and a cathode electrode, and is for forming a thin film on a substrate by performing plasma discharge between the anode electrode and the cathode electrode, comprising: a substrate holder disposed between the anode electrode and the cathode electrode; and one conductive member disposed between the substrate holder and one electrode of either the anode electrode or the cathode electrode, wherein the substrate holder supports the substrate, the one conductive member is provided between the one electrode and the substrate holder so as to substantially cover an entire space between the one electrode and the substrate holder, and the one conductive member is electrically connected to the one electrode and the substrate holder.
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2.发明授权Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same 失效等离子体CVD装置，以及用于形成膜的方法以及使用其形成半导体装置的方法公开(公告)号：US07565880B2
公开(公告)日：2009-07-28
申请号：US11700895
申请日：2007-02-01
IPC分类号： C23C16/00
CPC分类号： H01J37/32532 , C23C16/4583 , C23C16/5096
摘要： A plasma CVD apparatus comprises an anode electrode and a cathode electrode, and is for forming a thin film on a substrate by performing plasma discharge between the anode electrode and the cathode electrode, comprising: a substrate holder disposed between the anode electrode and the cathode electrode; and one conductive member disposed between the substrate holder and one electrode of either the anode electrode or the cathode electrode, wherein the substrate holder supports the substrate, the one conductive member is provided between the one electrode and the substrate holder so as to substantially cover an entire space between the one electrode and the substrate holder, and the one conductive member is electrically connected to the one electrode and the substrate holder.
摘要翻译： 等离子体CVD装置包括阳极电极和阴极电极，用于通过在阳极电极和阴极电极之间执行等离子体放电来在衬底上形成薄膜，其包括：设置在阳极电极和阴极之间的衬底保持器 ; 以及设置在所述基板保持件和所述阳极电极或所述阴极电极的一个电极之间的一个导电部件，其中，所述基板保持器支撑所述基板，所述一个导电部件设置在所述一个电极和所述基板保持件之间， 一个电极和衬底保持器之间的整个空间，并且一个导电构件电连接到一个电极和衬底保持器。
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3.发明申请Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same 失效等离子体CVD装置，以及用于形成膜的方法以及使用其形成半导体装置的方法公开(公告)号：US20070131170A1
公开(公告)日：2007-06-14
申请号：US11700895
申请日：2007-02-01
IPC分类号： C23C16/00
CPC分类号： H01J37/32532 , C23C16/4583 , C23C16/5096
摘要： A plasma CVD apparatus comprises an anode electrode and a cathode electrode, and is for forming a thin film on a substrate by performing plasma discharge between the anode electrode and the cathode electrode, comprising: a substrate holder disposed between the anode electrode and the cathode electrode; and one conductive member disposed between the substrate holder and one electrode of either the anode electrode or the cathode electrode, wherein the substrate holder supports the substrate, the one conductive member is provided between the one electrode and the substrate holder so as to substantially cover an entire space between the one electrode and the substrate holder, and the one conductive member is electrically connected to the one electrode and the substrate holder.
摘要翻译： 等离子体CVD装置包括阳极电极和阴极电极，用于通过在阳极电极和阴极电极之间执行等离子体放电来在衬底上形成薄膜，其包括：设置在阳极电极和阴极之间的衬底保持器 ; 以及设置在所述基板保持件和所述阳极电极或所述阴极电极的一个电极之间的一个导电部件，其中，所述基板保持器支撑所述基板，所述一个导电部件设置在所述一个电极和所述基板保持件之间， 一个电极和衬底保持器之间的整个空间，并且一个导电构件电连接到一个电极和衬底保持器。
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4.发明授权Semiconductor device manufacturing unit and semiconductor device manufacturing method 有权半导体器件制造单元和半导体器件制造方法公开(公告)号：US07722738B2
公开(公告)日：2010-05-25
申请号：US10704129
申请日：2003-11-10
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： C23C16/5096 , C23C16/24 , H01J37/32568 , H01J2237/2001 , H01L21/67069 , Y10T29/49108
摘要： A semiconductor device manufacturing unit is provided, wherein a cathode and an anode can be placed in a simple structure; wherein excellent film deposition and film thickness distribution can be gained; and wherein no cooling devices are required to be provided.A chamber 11 is formed so that the inside thereof can be controlled at a vacuum of an arbitrary degree. Anode supports 6 for supporting an anode 4 are placed at the bottom of the internal structure 8. The anode 4 is made of a material having a high electrical conductivity and a high heat resistance. The temperature of the anode 4 is controlled by a heater 24 so as to be in a range of from room temperature to 600° C. A cathode 2 is placed on a cathode support 5 so as to face the anode 4. The cathode support 5 is attached to an internal structure 8 made of a frame in a rectangular prism form provided within the chamber 11.
摘要翻译： 提供一种半导体器件制造单元，其中可以以简单的结构放置阴极和阳极; 其中可以获得优异的成膜和膜厚分布; 并且其中不需要设置冷却装置。 形成室11，使得其内部能够被任意程度的真空度控制。 阳极支撑6用于支撑阳极4放置在内部结构8的底部。阳极4由具有高导电性和高耐热性的材料制成。 阳极4的温度由加热器24控制在室温至600℃的范围内。阴极2被放置在阴极支撑件5上以面对阳极4.阴极支撑件5 附接到由设置在室11内的矩形棱镜形式的框架构成的内部结构8。
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5.发明授权Thin film formation apparatus including engagement members for support during thermal expansion 失效薄膜形成装置包括用于在热膨胀期间支撑的接合构件公开(公告)号：US07032536B2
公开(公告)日：2006-04-25
申请号：US10680213
申请日：2003-10-08
IPC分类号： C23C16/50
CPC分类号： H01J37/32009 , C23C16/5096 , H01J37/32082 , H01J37/32568 , H01J37/32724
摘要： A thin film formation apparatus for forming a thin film on a substrate is provided, which comprises: a reaction chamber; a gas introduction section for introducing a reactant gas into the reaction chamber; an evacuation section for exhausting the reactant gas from the reaction chamber; first and second planar electrodes provided in the reaction chamber; first and second support members which respectively support the first and second electrodes in parallel relation; a high frequency power source for applying high frequency power between the first and second electrodes; and a heating section for heating one of the first and second electrodes; wherein the substrate is placed on the heated electrode, and at least one of the first and second electrodes is supported movably in the direction of thermal expansion by the corresponding support member. With this arrangement, the variation in the spacing between the first electrode (anode electrode) and the second electrode (cathode electrode) can be reduced when the first and second electrodes are heated.
摘要翻译： 提供一种用于在基板上形成薄膜的薄膜形成装置，其包括：反应室; 用于将反应气体引入反应室的气体导入部， 用于从反应室排出反应气体的排气部; 设置在反应室中的第一和第二平面电极; 第一和第二支撑构件，其分别以平行关系支撑第一和第二电极; 用于在第一和第二电极之间施加高频电力的高频电源; 以及用于加热所述第一和第二电极之一的加热部分; 其中所述基板被放置在所述加热的电极上，并且所述第一和第二电极中的至少一个被所述相应的支撑构件沿热膨胀的方向可移动地支撑。 利用这种布置，当第一和第二电极被加热时，可以减小第一电极（阳极电极）和第二电极（阴极电极）之间的间隔的变化。
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公开(公告)号：US20050022864A1
公开(公告)日：2005-02-03
申请号：US10874365
申请日：2004-06-24
IPC分类号： C23C16/24 , C23C16/515 , H01L31/04 , H01L31/075 , H01L31/076 , H01L31/18 , H01L31/00
CPC分类号： H01L31/076 , C23C16/24 , C23C16/515 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： To uniformly form a silicon thin film for a solar cell, having an i layer formed with crystalline silicon, on a substrate of a large area to provide a high power solar cell, in a manufacturing method of a silicon thin film solar cell, a silicon thin film, having a structure such that an i layer is sandwiched between a p layer and an n layer, is formed on a substrate with a high frequency plasma CVD method, wherein i layer is formed with crystalline silicon using plasma with pulse-modulated high frequency power, one cycle of pulse modulation includes an ON state for outputting high frequency power and an OFF state for not outputting, an output waveform is modulated to be rectangular, a time of the ON state is 1-100 microseconds, and a time of the OFF state is 5 microseconds or longer.
摘要翻译： 为了在硅薄膜太阳能电池的制造方法中均匀地形成具有由晶体硅形成的i层的太阳能电池用硅薄膜，在大面积的基板上提供高功率太阳能电池，硅 在具有高频等离子体CVD法的基板上形成具有使i层夹在p层和n层之间的结构的薄膜，其中i层使用具有脉冲调制高频的等离子体形成晶体硅 电源中，脉冲调制的一个周期包括用于输出高频电源的ON状态和不输出的OFF状态，输出波形被调制为矩形，ON状态的时间为1-100微秒，时间为 OFF状态为5微秒以上。
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公开(公告)号：US06525264B2
公开(公告)日：2003-02-25
申请号：US09901618
申请日：2001-07-11
IPC分类号： H01L31024
CPC分类号： H01L31/0468 , H01L31/03767 , H01L31/046 , H01L31/048 , H01L31/186 , H02S40/40 , Y02E10/50 , Y02P70/521
摘要： A thin-film solar cell module of a light transmission type includes a light-transmissive substrate; a front electrode layer; a rear electrode layer, and a photovoltaic conversion layer. The rear electrode layer, front electrode layer, and photovoltaic conversion layer are sequentially laminated on the light-transmissive substrate. A heat retention member covers the rear electrode layer, and a sealing layer is provided for sealing the rear electrode layer. In certain embodiments, the heat retention member has a light absorptance of 40% or more within a near-infrared wavelength range of 1,500 to 2,000 nm.
摘要翻译： 透光型薄膜太阳能电池模块包括透光基板; 前电极层; 背面电极层和光电转换层。 后电极层，前电极层和光电转换层依次层叠在透光性基板上。 保温构件覆盖后电极层，并且设置密封层以密封后电极层。 在某些实施方案中，保温构件在1,500-2,000nm的近红外波长范围内具有40％以上的光吸收率。
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公开(公告)号：US06162988A
公开(公告)日：2000-12-19
申请号：US923259
申请日：1997-09-04
申请人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
发明人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
IPC分类号： G03G5/08 , C23C16/50 , C23C16/511 , H01L21/205 , H01L31/04 , H01L31/075 , H01L31/076 , H01L31/20 , H01L31/00
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.
摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。
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9.发明授权Method of generating a reciprocating plurality of magnetic fluxes on a target 失效在目标上产生往复运动的多个磁通量的方法
公开(公告)号：US6093290A
公开(公告)日：2000-07-25
申请号：US76238
申请日：1998-05-12
申请人： Hideo Tamura , Yasushi Fujioka , Masahiro Kanai , Akira Sakai
发明人： Hideo Tamura , Yasushi Fujioka , Masahiro Kanai , Akira Sakai
CPC分类号： H01J37/3455 , C23C14/35 , C23C14/562 , H01J37/3405
摘要： The sputtering method of the present invention comprises the steps of forming a plurality of tunnel-like magnetic fluxes on a target, forming an electric field between the target and a belt-like substrate, and conveying the belt-like substrate while reciprocating the plurality of tunnel-like magnetic fluxes at least in the direction of conveying the belt-like substrate, wherein the speed v of conveying the substrate, the distance L in the direction of conveying the belt-like substrate between two adjacent points where the magnetic field of the plurality of tunnel-like magnetic fluxes and the electric field cross each other at a right angle, and the period T of the reciprocating motion of the plurality of tunnel-like magnetic fluxes are controlled so as to L/v=(n+1/2)T wherein n is z-1/16
摘要翻译： 本发明的溅射方法包括以下步骤：在目标上形成多个隧道状磁通量，在靶和带状基底之间形成电场，并且在传送带状衬底的同时使多个 至少在输送带状基板的方向上的隧道状磁通量，其中传送基板的速度v，在传送带状基板的方向上的距离L，两个相邻点之间的磁场 多个隧道状磁通和电场以直角彼此交叉，并且多个隧道状磁通的往复运动的周期T被控制为L / v =（n ++ E ，1/2 + EE）T，其中n是z- + E，fra 1/16 + EE
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公开(公告)号：US5946587A
公开(公告)日：1999-08-31
申请号：US741352
申请日：1996-10-29
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
CPC分类号： H01L31/206 , C23C14/562 , C23C14/568 , C23C16/545 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein each of semiconductor layers of desired conduction type is deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is being moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via a gas gate having the structure of introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off the center of the separation chamber of the gas gate.
摘要翻译： 本发明的目的在于提供一种具有优异特性的功能性沉积膜的连续成型方法和装置，同时防止在具有不同压力的成膜室之间的气体之间的任何相互混合，其中期望的导电类型的每个半导体层沉积在带状 通过等离子体CVD在多个成膜室内的基板，同时带状基板沿着其长度方向连续移动通过多个成膜室，该多个成膜室通过具有引入清除气体的结构的气门连接到 狭缝状分离通道，其特征在于，连接形成半导体结的i型层成膜室和n型或p型层成膜室中的至少一个具有比i型 层成膜室具有设置在n型或p型层上的清除气体导入位置 成膜室一侧离开气门分离室的中心。
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