公开(公告)号：US06968857B2

公开(公告)日：2005-11-29

申请号：US10400704

申请日：2003-03-27

Applicant: James Chester Hawkins ,  David Edwards Woollums ,  Neal Arthur Ackerman ,  Chun Lin ,  Harold Joe McKinney ,  Erik Matthew Quijano

Inventor： James Chester Hawkins ,  David Edwards Woollums ,  Neal Arthur Ackerman ,  Chun Lin ,  Harold Joe McKinney ,  Erik Matthew Quijano

IPC: G05D16/06 ,  G05D16/02

CPC classification number: G05D16/0686 ,  Y10T137/783 ,  Y10T137/7831

Abstract: A pressure reducing fluid regulator having a housing with a flange including a plurality of ear-shaped protrusions is disclosed. Each of the protrusions includes at least one aperture configured to receive fastener such that the circumferential spacing between first and second fasteners is less than the circumferential spacing between the second fastener and a third fastener. The regulator includes a valve having a valve seat, a valve disc, a valve stem coupled to the valve disc and a valve guide that holds the valve stem. A lever having a first end coupled to the valve stem and a second end coupled to a diaphragm applies a force to the valve stem in a direction that is non-parallel to the longitudinal axis of the valve stem to cause the valve stem to frictionally engage the valve guide. The valve stem includes a stop that limits travel of the valve stem and disc toward the valve seat.

Abstract translation: 公开了一种减压流体调节器，其具有具有包括多个耳状突起的凸缘的壳体。 每个突起包括构造成接收紧固件的至少一个孔，使得第一和第二紧固件之间的周向间隔小于第二紧固件和第三紧固件之间的周向间隔。 调节器包括具有阀座，阀盘，连接到阀盘的阀杆和保持阀杆的阀导向件的阀。 具有联接到阀杆的第一端和联接到隔膜的第二端的杆在与阀杆的纵向轴线不平行的方向上向阀杆施加力，以使阀杆摩擦接合 阀门导板。 阀杆包括限制阀杆和盘片朝向阀座行进的止动件。

公开(公告)号：US20050258433A1

公开(公告)日：2005-11-24

申请号：US11032887

申请日：2005-01-10

Applicant: Peter Djurovich ,  Jui-Yi Tsai ,  Chun Lin ,  Jason Brooks ,  Bert Alleyne ,  Mark Thompson ,  Peter MacKenzie ,  Bin Ma

Inventor： Peter Djurovich ,  Jui-Yi Tsai ,  Chun Lin ,  Jason Brooks ,  Bert Alleyne ,  Mark Thompson ,  Peter MacKenzie ,  Bin Ma

IPC: H01L27/15 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L51/50

CPC classification number: H01L51/0085 ,  C07F15/0033 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/0072 ,  H01L51/0077 ,  H01L51/0079 ,  H01L51/0081 ,  H01L51/5016 ,  H01L51/5036 ,  H01L2251/308 ,  Y10S428/917

Abstract: An organic light emitting device having an anode, a cathode and an organic layer disposed between the anode and the cathode is provided. In one aspect, the organic layer comprises a compound having at least one zwitterionic carbon donor ligand. In another aspect, the organic layer comprises a carbene compound, including the following: In another aspect, the organic layer comprises a carbene compound, including: In another aspect, the organic layer comprises a carbene compound that includes a triazole ring and has the structure: In another aspect, the organic layer comprises a carbene compound that includes a tetrazole ring and has the structure:

Abstract translation: 提供一种具有设置在阳极和阴极之间的阳极，阴极和有机层的有机发光器件。 一方面，有机层包括具有至少一个两性离子碳供体配体的化合物。 另一方面，有机层包括卡宾化合物，其包括以下：另一方面，有机层包含卡宾化合物，其包括：另一方面，有机层包含含有三唑环的卡宾化合物，其结构 另一方面，有机层包含含有四唑环的卡宾化合物，其结构如下：

公开(公告)号：US20050112997A1

公开(公告)日：2005-05-26

申请号：US10723236

申请日：2003-11-26

Applicant: Chun Lin ,  Ai-Sen Liu ,  Sunny Wu ,  Yu-Liang Lin ,  Henry Lo ,  Mei-Sheng Zhou

Inventor： Chun Lin ,  Ai-Sen Liu ,  Sunny Wu ,  Yu-Liang Lin ,  Henry Lo ,  Mei-Sheng Zhou

IPC: B24B37/04 ,  B24B51/00 ,  G05B13/02 ,  H01L21/3105 ,  H01L21/321 ,  B24B49/00 ,  B24B1/00

CPC classification number: B24B51/00 ,  B24B37/042 ,  G05B13/024 ,  H01L21/31053 ,  H01L21/3212

Abstract: A wafer based APC method for controlling an oxide (Cu, or TaN) polish step is described and combines a feed forward model that compensates for incoming wafer variations with a feed backward model which compensates for CMP variations. The method is geared toward minimizing Rs 3σ variations. A Rs target value is inputted with metrology data from previous processes that affects the width and thickness of the copper layer. A copper thickness target and polish time for the first wafer is determined. Post CMP measurement data of the first wafer is used to modify the polish rate with a disturbance factor and an updated polish time is computed for subsequent wafers. The CMP recipe for each wafer is adjusted with metrology data and post CMP measurements. The APC method is successful in controlling copper Rs variations for the 90 nm technology node and is independent of copper pattern density.

Abstract translation: 描述了用于控制氧化物（Cu或TaN）抛光步骤的基于晶圆的APC方法，并且组合了用于补偿进入晶片变化的前馈模型与补偿CMP变化的馈送反向模型。 该方法面向最小化Rs 3sigma变化。 输入Rs目标值，其中来自先前工艺的测量数据影响铜层的宽度和厚度。 确定第一晶片的铜厚度目标和抛光时间。 第一晶片的CMP后测量数据被用于利用干扰因子修改抛光速率，并且为随后的晶片计算更新的抛光时间。 每个晶片的CMP配方用测量数据和后CMP测量进行调整。 APC方法成功地控制了90nm技术节点的铜Rs变化，并且与铜图案密度无关。