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公开(公告)号：US5424244A
公开(公告)日：1995-06-13
申请号：US971237
申请日：1992-11-04
IPC分类号： B60R25/00 , E05B67/06 , E05B67/38 , H01L21/223 , H01L21/336 , H01L21/26
CPC分类号： H01L29/66757 , B60R25/066 , H01L21/223 , H01L27/14692 , Y10T29/41
摘要： A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article.The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.
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92.发明授权Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode 失效具有LDD区域和栅电极的阳极氧化膜的绝缘栅场效应半导体器件
公开(公告)号：US5308998A
公开(公告)日：1994-05-03
申请号：US933810
申请日：1992-08-24
IPC分类号： H01L29/78 , G02F1/1362 , H01L21/265 , H01L21/336 , H01L21/60 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/49 , H01L29/786 , H01L31/036 , H01L27/01 , H01L29/76
CPC分类号： H01L29/04 , H01L21/76897 , H01L27/1214 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78651 , H01L29/78666 , H01L29/78675 , G02F1/13454 , G02F2001/136245
摘要： An IGFET has differential crystallinity in offset regions near the source-channel and drain-channel boundaries. In one embodiment, an offset region with crystallinity different from that of an adjacent region is provided between the channel and at least one of the source and drain regions. An oxide film may be provided to cover the surface of the gate electrode, formed by anodizing the surface of the gate electrode, and this layer may be used as a mask when forming the crystallinity offset regions.
摘要翻译： IGFET在源极沟道和漏极 - 沟道边界附近的偏移区域具有差分结晶度。 在一个实施例中，具有与相邻区域不同的结晶度的偏移区域设置在沟道和源极和漏极区域中的至少一个之间。 可以提供氧化物膜以覆盖通过阳极氧化栅电极的表面形成的栅电极的表面，并且该层可以在形成结晶偏移区域时用作掩模。
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93.发明授权公开(公告)号：US08698389B2
公开(公告)日：2014-04-15
申请号：US13286608
申请日：2011-11-01
IPC分类号： H01L51/54
CPC分类号： H01L51/0038 , H01L27/32 , H01L27/322 , H01L27/3244 , H01L51/0025 , H01L51/0035 , H01L51/005 , H01L51/0081 , H01L51/5012 , H01L51/5237 , H01L51/5243 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/5284 , H01L2251/5315 , Y10S428/917
摘要： By repeating a purification process of a light-emitting organic compound several times, a thin film made of the light-emitting organic compound to be used in an EL display device contains ionic impurities at the concentration of 0.1 ppm or lower and has a volume resistivity in the range of 3×1010 Ωcm or larger. By using such a thin film as a light-emitting layer in the EL device, a current caused by reasons other than the carrier recombination can be prevented from flowing through the thin film, and deterioration caused by unnecessary heat generation can be suppressed. Accordingly, it is possible to obtain an EL display device with high reliability.
摘要翻译： 通过重复发光有机化合物的净化处理多次，由EL显示装置中使用的发光有机化合物制成的薄膜含有浓度为0.1ppm以下的离子性杂质，具有体积电阻率 在3×1010＆OHgr; cm以上的范围内。 通过在EL器件中使用这种薄膜作为发光层，可以防止由载流子复合以外的原因引起的电流流过薄膜，并且可以抑制不必要的发热引起的劣化。 因此，可以获得高可靠性的EL显示装置。
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公开(公告)号：US20120248453A1
公开(公告)日：2012-10-04
申请号：US13492823
申请日：2012-06-09
IPC分类号： H01L33/08
CPC分类号： H01L51/5253 , H01L23/3171 , H01L27/1214 , H01L27/1248 , H01L27/322 , H01L27/3244 , H01L27/3258 , H01L29/78621 , H01L51/529 , H01L51/56 , H01L2924/0002 , Y10S428/917 , H01L2924/00
摘要： An object of the present invention is to provide an EL display device, which has a high operating performance and reliability.A third passivation film 45 is disposed under an EL element 203 which comprises a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, to make a structure in which heat generated by the EL element 203 is radiated. Further, the third passivation film 45 prevents alkali metals within the EL element 203 from diffusing into the TFTs side, and prevents moisture and oxygen of the TFTs side from penetrating into the EL element 203. More preferably, heat radiating effect is given to a fourth passivation film 50 to make the EL element 203 to be enclosed by heat radiating layers.
摘要翻译： 本发明的目的是提供一种具有高操作性能和可靠性的EL显示装置。 第三钝化膜45设置在包括像素电极（阳极）46，EL层47和阴极48的EL元件203的下方，以形成其中辐射由EL元件203产生的热量的结构。 此外，第三钝化膜45防止EL元件203内的碱金属扩散到TFT侧，并且防止TFT侧的水分和氧气渗透到EL元件203中。更优选地，将散热效果提供给第四钝化膜 钝化膜50以使EL元件203被散热层包围。
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公开(公告)号：US20110227088A1
公开(公告)日：2011-09-22
申请号：US13117319
申请日：2011-05-27
IPC分类号： H01L27/15
CPC分类号： H01L27/3262 , H01L27/1218 , H01L27/124 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L27/3272 , H01L27/3276 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/5284 , H01L51/56 , H01L2251/5315
摘要： Plurality of pixels (102) are arranged on the substrate. Each of the pixels (102) is provided with an EL element which utilizes as a cathode a pixel electrode (105) connected to a current control TFT (104). On a counter substrate (110), a light shielding film (112) is disposed at the position corresponding to periphery of each pixel (102), while a color filter (113) is disposed at the position corresponding to each of the pixels (102). This light shielding film makes the contour of the pixels clear, resulting in an image display with high definition. In addition, it is possible to fabricate the EL display device of the present invention with most of an existing manufacturing line for liquid crystal display devices. Thus, an amount of equipment investment can be significantly reduced, thereby resulting in a reduction in the total manufacturing cost.
摘要翻译： 多个像素（102）被布置在基板上。 每个像素（102）设置有EL元件，其利用连接到电流控制TFT（104）的像素电极（105）作为阴极。 在对置基板（110）上，在与各像素（102）的周围对应的位置设置遮光膜（112），同时在与每个像素（102）对应的位置设置滤色器（113） ）。 该遮光膜使像素的轮廓清晰，导致高分辨率的图像显示。 此外，可以利用大部分现有的液晶显示装置制造线来制造本发明的EL显示装置。 因此，可以显着减少设备投资的量，从而导致总制造成本的降低。
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公开(公告)号：US07977876B2
公开(公告)日：2011-07-12
申请号：US11526345
申请日：2006-09-25
CPC分类号： H01L51/56 , H01L51/5246 , H01L51/525 , H01L51/5259 , H01L2251/566
摘要： Technology to reduce the manufacturing cost of a manufacturing process of a light emitting device is provided. The manufacturing cost of a device using a light emitting element can be reduced by using a multilayout process for forming a plurality of light emitting devices from a large-sized substrate. In particular, an existing line for manufacturing liquid crystal cells can be diverted to a process of encapsulating light emitting elements, which can greatly reduce the manufacturing cost including the investment in plant and equipment.
摘要翻译： 提供了降低发光器件的制造工艺的制造成本的技术。 通过使用用于从大尺寸基板形成多个发光器件的多层工艺，可以减少使用发光元件的器件的制造成本。 特别地，用于制造液晶单元的现有线路可以转移到封装发光元件的过程中，这可以大大降低制造成本，包括对工厂和设备的投资。
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公开(公告)号：US07592193B2
公开(公告)日：2009-09-22
申请号：US11249435
申请日：2005-10-14
IPC分类号： H01L21/00
CPC分类号： H01L51/5088 , H01L27/1214 , H01L27/3244 , H01L51/5008 , H01L51/5215 , H01L51/524 , H01L51/5253 , H01L2251/5315 , H01L2251/5353 , Y10S257/91 , Y10S257/911 , Y10S257/918
摘要： In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit electrode is provided. In a light emitting element made of a cathode, an organic compound layer and an anode, a protection film is formed in an interface between the anode that is a light exit electrode and the organic compound layer. The protection film formed on the organic compound layer has transmittance in the range of 70 to 100%, and when the anode is deposited by use of the sputtering method, a sputtering damage to the organic compound layer can be inhibited from being inflicted.
摘要翻译： 在有源矩阵型发光器件中，提供其中形成在有机化合物层的上部处的阳极成为光出射电极的顶表面出射型发光器件。 在由阴极，有机化合物层和阳极制成的发光元件中，在作为光出射电极的阳极和有机化合物层之间的界面中形成保护膜。 在有机化合物层上形成的保护膜的透过率为70〜100％，通过溅射法沉积阳极，能够抑制对有机化合物层的溅射损伤。
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公开(公告)号：US07342251B2
公开(公告)日：2008-03-11
申请号：US11202143
申请日：2005-08-12
IPC分类号： H01L21/28
CPC分类号： H01L27/3244 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/1251 , H01L27/3258 , H01L27/3262 , H01L51/0004 , H01L51/0013 , H01L51/5231 , H01L51/56 , H01L2251/5315
摘要： An object of the invention is to reduce the manufacturing cost of EL display devices and electronic devices incorporating the EL display devices. An EL material is formed by printing in an active matrix EL display device. Relief printing or screen printing may be used as the method of printing. Manufacturing steps of the EL layer is therefore simplified and reduction of manufacturing cost is devised.
摘要翻译： 本发明的目的是降低EL显示装置和结合有EL显示装置的电子装置的制造成本。 通过在有源矩阵EL显示装置中印刷形成EL材料。 可以使用浮雕印刷或丝网印刷作为印刷方法。 因此，EL层的制造步骤被简化，并且设计了制造成本的降低。
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公开(公告)号：US20060192205A1
公开(公告)日：2006-08-31
申请号：US11407145
申请日：2006-04-20
IPC分类号： H01L29/04
CPC分类号： H01L33/08 , H01L27/1218 , H01L27/1255 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L29/78696 , H01L51/5237 , H01L51/524 , H01L51/5246 , H01L51/5259 , H01L51/529 , H01L2251/5315 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Morever, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.
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公开(公告)号：US06809343B2
公开(公告)日：2004-10-26
申请号：US10455044
申请日：2003-06-05
IPC分类号： H01L2715
CPC分类号： G09G3/3233 , G09G3/30 , G09G3/3275 , G09G2300/0426 , G09G2300/0465 , G09G2300/0809 , G09G2300/0842 , G09G2310/061 , G09G2320/0233 , H01L27/1203 , H01L27/3244 , H01L27/3262 , H01L29/66772 , H01L29/78621 , H01L2251/566
摘要： There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET (201) and an electric current controlling FET (202) are formed on a single crystal semiconductor substrate (11), and an EL element (203) is electrically connected to the electric current controlling FET (202). The fluctuation in characteristics of the electric current controlling FET (202) is very low among pixels, and an image with high color reproducibility can be obtained. By taking hot carrier measures in the electric current controlling FET (202), the electronic device having high reliability can be obtained.
摘要翻译： 提供了具有高可靠性和高色彩再现性的电子设备。 进行像素结构，使得开关FET（201）和电流控制用FET（202）形成在单晶半导体基板（11）上，并且将EL元件（203）电连接到电流控制FET （202）。 电流控制FET（202）的特性波动在像素中非常低，并且可以获得具有高色彩再现性的图像。 通过在电流控制用FET（202）中采取热载体测量，可以获得具有高可靠性的电子设备。
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