公开(公告)号：US20070154211A1

公开(公告)日：2007-07-05

申请号：US11454716

申请日：2006-06-16

申请人： Sang Kim

发明人： Sang Kim

IPC分类号： H04B10/08

CPC分类号： B65G49/064 ,  G02F1/1303

摘要： An apparatus for detecting error of a transfer system that is adapted for detecting an error of a transfer system transferring a substrate loaded upon fabricating of a flat panel display device in a real time is disclosed. In the apparatus, an emitter generates a light and radiates the light into a transfer system. A receiver receives light reflected from the transfer system. A controller controls light radiation from the emitter, and measures the time such that a reflective light of the transfer system is received from an emitting point of the emitter to the receiver. The controller also detects a displacement of the transfer system using the measured time, a designated reference distance and a reference time. A display displays the displacement of the transfer system detected by the controller.

摘要翻译： 公开了一种用于检测传送系统的错误的装置，该传送系统适于检测在实时制造平板显示装置时传送负载的基板的传送系统的误差。 在该装置中，发射器产生光并将光照射到传送系统中。 接收器接收从传送系统反射的光。 控制器控制来自发射器的光辐射，并且测量传输系统的反射光从发射器的发射点接收到接收器的时间。 控制器还使用测量时间，指定的参考距离和参考时间来检测传送系统的位移。 显示器显示由控制器检测到的传送系统的位移。

公开(公告)号：US20070150213A1

公开(公告)日：2007-06-28

申请号：US11634525

申请日：2006-12-05

申请人： Sang Kim ,  Hegeon Kwun

发明人： Sang Kim ,  Hegeon Kwun

IPC分类号： G06F19/00

CPC分类号： G01N29/075 ,  G01N29/2412 ,  G01N29/4454 ,  G01N2291/262 ,  G01N2291/267

摘要： A method and associated algorithms for identifying and distinguishing geometric feature signals from defect signals in the NDE of longitudinal structures. The method includes the steps of collecting an interrogation signal (including reflected components) from a longitudinal structure under evaluation and comparing it with a selected reference signal from a known geometric feature maintained in a database. The comparison involves a determination of the signals phase. Same phase signals identify the source as a geometric feature, while opposite phase signals identify the source as a defect. The comparison involves the steps of gating each of the signals and creating an array of correlation values between points on each. The correlation values are analyzed and a determination (based on comparing maximum and minimum correlation values) is made of the signal phases. A reliability factor may be determined by comparison of the correlation values and the maximum and minimum thereof.

摘要翻译： 一种用于识别和区分几何特征信号与纵向结构的NDE中的缺陷信号的方法和相关算法。 该方法包括以下步骤：从评估中的纵向结构收集询问信号（包括反射分量），并将其与从数据库中维护的已知几何特征中选出的参考信号进行比较。 比较涉及信号相位的确定。 相同的信号将源标识为几何特征，而相反的相位信号将源识别为缺陷。 比较涉及门控每个信号的步骤，并在每个点之间创建一个相关值阵列。 分析相关值，并对信号相位进行确定（基于比较最大和最小相关值）。 可靠性因子可以通过相关值与其最大值和最小值的比较来确定。

公开(公告)号：US20070148967A1

公开(公告)日：2007-06-28

申请号：US11615105

申请日：2006-12-22

申请人： Sang Kim ,  Jae Han

发明人： Sang Kim ,  Jae Han

IPC分类号： H01L21/4763

CPC分类号： H01L21/76874 ,  C25D3/38 ,  C25D3/58 ,  C25D5/022 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76877

摘要： A method for manufacturing a semiconductor device is provided. The method includes the steps of forming an interlayer insulating layer on a semiconductor substrate, selectively patterning the interlayer insulating layer to form a contact hole, depositing a first metal on an inner surface of the contact hole, submerging the semiconductor substrate on which the first metal is deposited into an electrochemical plating (ECP) solution bath in which a second metal is dissolved, dissolving the first metal in the ECP solution bath, plating the first and second metals dissolved in the ECP solution bath at the same time to gap-fill an alloy of the first and second metals in the contact hole, and removing the alloy using the interlayer insulating layer as an end point in a CMP process to form an alloy interconnection.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括以下步骤：在半导体衬底上形成层间绝缘层，选择性地图案化层间绝缘层以形成接触孔;在接触孔的内表面上沉积第一金属;浸没第一金属 沉积到其中溶解有第二金属的电化学电镀（ECP）溶液浴中，将第一金属溶解在ECP溶液浴中，同时电镀溶解在ECP溶液浴中的第一和第二金属以间隙填充 接触孔中的第一和第二金属的合金，并且在CMP工艺中使用层间绝缘层作为终点去除合金以形成合金互连。

公开(公告)号：US20070146567A1

公开(公告)日：2007-06-28

申请号：US11704267

申请日：2007-02-09

申请人： Joon Yang ,  Yong Park ,  Sang Kim

发明人： Joon Yang ,  Yong Park ,  Sang Kim

IPC分类号： G02F1/136

CPC分类号： G02F1/136227 ,  G02F1/136286 ,  G02F2001/136231 ,  H01L27/1288

摘要： A method of fabricating a liquid crystal display device includes forming an active pattern and a data line on a substrate, forming a first insulating layer on the data line, forming a second insulating layer on the substrate, forming a gate electrode on the second insulating layer above the active pattern, forming a third insulating layer on the substrate, forming first and second contact holes through the second and third insulating layers to expose first and second portions of the active pattern, and forming a third contact hole through the first, second, and third insulating layers exposing a portion of the data line, respectively, and forming source and drain electrodes on the third insulating layer, the source electrode connected to the first exposed portion of the active pattern through the first contact hole and connected to the first exposed portion of the data line through the third contact hole, and the drain electrode connected to the second exposed portion of the active pattern through the second contact hole.

公开(公告)号：US20070134879A1

公开(公告)日：2007-06-14

申请号：US11485895

申请日：2006-07-13

申请人： Sang Kim ,  Hyun Bae ,  Sang Lee

发明人： Sang Kim ,  Hyun Bae ,  Sang Lee

IPC分类号： H01L21/336 ,  H01L29/76

CPC分类号： H01L29/165 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/78 ,  H01L29/7848

摘要： Provided are a semiconductor device and a method of manufacturing the same. The method includes the steps of: forming a first silicon layer on a semiconductor substrate; patterning the first silicon layer formed on the semiconductor substrate, and exposing a channel region; forming a second silicon layer on the semiconductor substrate in which the channel region is exposed; removing the first silicon layer, and forming source and drain regions; and forming a third silicon layer in the source and drain regions. According to the manufacturing method, it is possible to minimize defects in a silicon interface by forming the source and drain using only a selective epitaxial growth method without a dry-etching process. Also, since stress is concentrated to a silicon channel region, hole mobility and driving current characteristics are considerably improved.

摘要翻译： 提供半导体器件及其制造方法。 该方法包括以下步骤：在半导体衬底上形成第一硅层; 图案化形成在半导体衬底上的第一硅层，并暴露沟道区; 在所述半导体衬底上形成所述沟道区域露出的第二硅层; 去除第一硅层，形成源区和漏区; 以及在源区和漏区中形成第三硅层。 根据制造方法，可以通过仅使用选择性外延生长法而不进行干蚀刻工艺来形成源极和漏极来最小化硅界面中的缺陷。 此外，由于应力集中在硅沟道区域，空穴迁移率和驱动电流特性显着提高。

公开(公告)号：US20070128439A1

公开(公告)日：2007-06-07

申请号：US11633475

申请日：2006-12-05

申请人： Sang Kim ,  Woo Lee ,  Young Lim

发明人： Sang Kim ,  Woo Lee ,  Young Lim

IPC分类号： B32B1/00 ,  B05D7/00 ,  B05D1/18

CPC分类号： B01J13/02 ,  B22F1/02 ,  B22F2998/00 ,  B22F2998/10 ,  B82Y30/00 ,  C01G23/053 ,  C01P2004/80 ,  Y10S977/778 ,  Y10S977/81 ,  Y10S977/811 ,  Y10T428/2991 ,  Y10T428/2993 ,  B22F1/0018 ,  B22F1/0022 ,  B22F1/0074

摘要： Disclosed herein are core-shell type nanoparticles comprising nanoparticle cores made of a metal or semiconductor, and shells made of crystalline metal oxide formed on the surfaces of the nanoparticle cores, as well as a preparation method thereof. According to the disclosed invention, the core-shell nanoparticles, consisting of metallic or semiconductor cores and crystalline metal oxide shells, can be prepared by epitaxially growing metal oxide on the surfaces of the metallic or semiconductor nanoparticle cores. By virtue of the crystalline metal oxide shells, the core nanoparticle made of metal or semiconductor can ensure excellent chemical and mechanical stability, and the core-shell nanoparticles can show new properties resulting from the interaction between the metal cores and the metal oxide crystal shells.

摘要翻译： 本文公开了包含由金属或半导体制成的纳米颗粒芯以及形成在纳米颗粒芯表面上的结晶金属氧化物制成的壳的核 - 壳型纳米颗粒及其制备方法。 根据所公开的发明，由金属或半导体芯和结晶金属氧化物壳组成的核 - 壳纳米颗粒可以通过在金属或半导体纳米颗粒芯的表面上外延生长金属氧化物来制备。 由于结晶金属氧化物壳，由金属或半导体制成的芯纳米颗粒可以确保优异的化学和机械稳定性，并且核 - 壳纳米颗粒可以显示由金属芯和金属氧化物晶体壳之间的相互作用产生的新特性。

公开(公告)号：US20070102621A1

公开(公告)日：2007-05-10

申请号：US11320908

申请日：2005-12-30

申请人： Sang Kim

发明人： Sang Kim

IPC分类号： H01L27/00

CPC分类号： H01L27/14627 ,  H01L27/14685

摘要： An image sensor includes the steps of forming a sublayer including a photodiode, a transistor and a metal line on a substrate, forming a pattern layer on the sublayer to be overlapped with the photodiode and to having a curved surface, and forming a combined color filter and microlens on the pattern layer to have a curved surface.

摘要翻译： 图像传感器包括以下步骤：在衬底上形成包括光电二极管，晶体管和金属线的子层，在子层上形成图案层以与光电二极管重叠并具有弯曲表面，并形成组合滤色器 并且图案层上的微透镜具有弯曲表面。

公开(公告)号：US20070100919A1

公开(公告)日：2007-05-03

申请号：US11584281

申请日：2006-10-20

申请人： Sang Lee ,  Hee Won ,  Sang Kim ,  Chang Cha ,  Hyung Kim ,  Gyu Hwang

发明人： Sang Lee ,  Hee Won ,  Sang Kim ,  Chang Cha ,  Hyung Kim ,  Gyu Hwang

IPC分类号： G06F17/30

CPC分类号： G06F12/0276

摘要： A garbage collection unit and a garbage collection method in an embedded environment are provided. In the method, a memory is divided into a young generation area including first and second areas and an old generation area including a predetermined number of blocks, the young generation area is divided into two areas, the garbage collection is performed alternately in the first and second areas of the young generation area, and the garbage collection in the old generation area is performed gradually in units of individual frames including a predetermined number of blocks. Accordingly, time delay due to garbage collection can be minimized, thereby guaranteeing a real-time operation.

摘要翻译： 提供了嵌入式环境中的垃圾收集单元和垃圾收集方法。 在该方法中，将存储器划分为包括第一和第二区域的年轻一代区域和包括预定数量块的旧生成区域，将年轻生成区域划分为两个区域，在第一区域中交替执行垃圾收集， 年轻一代区域的第二区域，旧区域中的垃圾收集以包括预定数量的块的单个帧为单位逐渐进行。 因此，由于垃圾收集引起的时间延迟可以最小化，从而保证实时操作。

公开(公告)号：USD540720S1

公开(公告)日：2007-04-17

申请号：US29241411

申请日：2005-10-27

申请人： Edward Golden ,  Darrell Behmer ,  Melvin Betancourt ,  Solomon Song ,  Shawn Wehrly ,  Addam Ebel ,  Sang Kim ,  Garen Nicoghosian

设计人： Edward Golden ,  Darrell Behmer ,  Melvin Betancourt ,  Solomon Song ,  Shawn Wehrly ,  Addam Ebel ,  Sang Kim ,  Garen Nicoghosian

公开(公告)号：US20070077186A1

公开(公告)日：2007-04-05

申请号：US11527407

申请日：2006-09-27

申请人： Jae Gil ,  Jae Jang ,  Sang Kim ,  Sung Kim

发明人： Jae Gil ,  Jae Jang ,  Sang Kim ,  Sung Kim

IPC分类号： B01J10/00 ,  B01J8/04

CPC分类号： C01B3/323 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00835 ,  B01J2219/00873 ,  C01B2203/0233 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/066 ,  C01B2203/085 ,  C01B2203/1041 ,  C01B2203/1047 ,  C01B2203/107 ,  C01B2203/1076 ,  C01B2203/1223 ,  C01B2203/1258 ,  C01B2203/1288

摘要： A thin type reforming apparatus used for a fuel cell is provided. In the thin type reforming apparatus, a substrate has a passage formed therein, and a fuel inlet introduces fuel to the passage. An evaporator is disposed within the substrate downstream of the fuel inlet, and includes a bubble remover for imparting a flow resistance to the fuel in a liquid state, removing bubbles and vaporizing the fuel. A reformer has a passage formed downstream of the evaporator, and reforms the fuel to hydrogen gas through a heat absorbing reaction. A CO remover has a passage formed downstream of the reformer and removes CO gas included in the hydrogen gas through a heat radiating reaction. A cover covers an upper portion of the substrate and sealing the passages from an outside.

摘要翻译： 提供了一种用于燃料电池的薄型重整装置。 在薄型重整装置中，基板具有形成在其中的通道，并且燃料入口将燃料引入通道。 蒸发器设置在燃料入口下游的基板内，并且包括用于赋予液态燃料的流动阻力的气泡去除器，去除气泡和蒸发燃料。 重整器具有在蒸发器下游形成的通道，并且通过吸热反应将燃料改造成氢气。 CO去除剂具有形成在重整器下游的通道，并通过散热反应除去包含在氢气中的CO气体。 盖覆盖基板的上部并且将通道从外部密封。