公开(公告)号：US07425250B2

公开(公告)日：2008-09-16

申请号：US10830894

申请日：2004-04-23

申请人： Bulent M. Basol ,  Homayoun Talieh

发明人： Bulent M. Basol ,  Homayoun Talieh

IPC分类号： C25F7/00 ,  C25F3/30 ,  C25D17/00 ,  B23H3/00

CPC分类号： C25F7/00 ,  B23H5/08 ,  B24B21/04 ,  B24B21/22 ,  B24B37/04 ,  B24B37/205 ,  B24B47/04 ,  C25D5/02 ,  C25D5/06 ,  C25D5/22 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/76877

摘要： A system for electrochemical mechanical polishing of a conductive surface of a wafer is provided. The system includes a wafer holder to hold the wafer and a belt pad disposed proximate to the wafer to polish the conductive surface. Application of a potential difference between conductive surface and an electrode and establishing relative motion between the belt pad and the conductive surface result in material removal from the conductive surface. Electrical contact to the surface is provided through either contacts embedded in the belt pad or contacts placed adjacent the belt pad.

摘要翻译： 提供了一种用于晶片的导电表面的电化学机械抛光的系统。 该系统包括用于保持晶片的晶片保持器和靠近晶片设置的用于抛光导电表面的带垫。 施加导电表面和电极之间的电位差并且在皮带垫和导电表面之间建立相对运动导致从导电表面去除材料。 通过嵌入在皮带垫中的触点或邻近皮带垫的触点提供与表面的电接触。

公开(公告)号：US07311811B2

公开(公告)日：2007-12-25

申请号：US10826219

申请日：2004-04-16

申请人： Homayoun Talieh ,  Cyprian Uzoh ,  Bulent M. Basol

发明人： Homayoun Talieh ,  Cyprian Uzoh ,  Bulent M. Basol

IPC分类号： C25F3/02

CPC分类号： B23H3/04 ,  B23H5/08 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  C25D17/005 ,  C25F7/00 ,  H01L21/2885

摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

摘要翻译： 可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。 第一导电元件可以具有相同或不同构造的多个电触点，或者可以是导电焊盘的形式，并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。 当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时，导电材料沉积在衬底表面上。 可以使施加在阳极和阴极之间的电压的极性反转，从而可以对沉积的导电材料进行电蚀刻。

公开(公告)号：US07211186B2

公开(公告)日：2007-05-01

申请号：US10282930

申请日：2002-10-28

申请人： Bulent M. Basol ,  Homayoun Talieh

发明人： Bulent M. Basol ,  Homayoun Talieh

IPC分类号： C25D21/12 ,  C25D17/00

CPC分类号： C25D7/123 ,  C25D17/001 ,  C25D17/005 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/67086 ,  H01L21/76877

摘要： Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

公开(公告)号：US07172497B2

公开(公告)日：2007-02-06

申请号：US10264726

申请日：2002-10-03

申请人： Bulent M. Basol ,  Homayoun Talieh

发明人： Bulent M. Basol ,  Homayoun Talieh

IPC分类号： B24B1/00 ,  B24B7/22

CPC分类号： C25D5/06 ,  B24B37/042 ,  B24B37/046 ,  B24B49/16 ,  C25D5/22 ,  C25D7/123 ,  C25D17/001 ,  H01L21/67173 ,  H01L21/67207 ,  H01L21/67219 ,  H01L21/6723 ,  H01L21/7684

摘要： A system and a method of forming copper interconnect structures in a surface of a wafer is provided. The method includes a step of performing a planar electroplating process in an electrochemical mechanical deposition station for filling copper material into a plurality of cavities formed in the surface of the wafer. The electroplating continues until a planar layer of copper with a predetermined thickness is formed on the surface of the wafer. In a following chemical mechanical polishing step the planar layer is removed until the copper remains in the cavities, insulated from one another by exposed regions of the dielectric layer.

摘要翻译： 提供了一种在晶片表面形成铜互连结构的系统和方法。 该方法包括在电化学机械沉积站中进行平面电镀处理以将铜材料填充到形成在晶片表面中的多个空腔中的步骤。 电镀继续进行，直到在晶片的表面上形成具有预定厚度的平坦的铜层。 在随后的化学机械抛光步骤中，去除平面层，直到铜保留在空腔中，通过介电层的暴露区域彼此绝缘。

公开(公告)号：US06946066B2

公开(公告)日：2005-09-20

申请号：US10201604

申请日：2002-07-22

申请人： Bulent M. Basol ,  Cyprian E. Uzoh ,  Homayoun Talieh

发明人： Bulent M. Basol ,  Cyprian E. Uzoh ,  Homayoun Talieh

IPC分类号： C25D5/02 ,  C25D5/22 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  C25D5/00 ,  C25D5/06 ,  C25D5/48 ,  H01L21/44

CPC分类号： C25D5/02 ,  C25D5/22 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76877

摘要： The present invention relates to a method for forming a planar conductive surface on a wafer. In one aspect, the present invention uses a no-contact process with electrochemical deposition, followed by a contact process with electrochemical mechanical deposition.

摘要翻译： 本发明涉及一种在晶片上形成平面导电表面的方法。 一方面，本发明使用具有电化学沉积的无接触方法，接着进行电化学机械沉积的接触过程。

公开(公告)号：US06932896B2

公开(公告)日：2005-08-23

申请号：US09982558

申请日：2001-10-17

申请人： Bulent M. Basol ,  Cyprian Uzoh ,  Homayoun Talieh

发明人： Bulent M. Basol ,  Cyprian Uzoh ,  Homayoun Talieh

IPC分类号： B08B1/04 ,  B24B37/04 ,  B24B53/00 ,  B24B53/007 ,  C25D5/22 ,  C25D7/12 ,  C25F3/16 ,  H01L21/288 ,  H01L21/304 ,  H01L21/768

CPC分类号： B24B53/017 ,  B24B37/04 ,  B24B53/001 ,  C25D5/22 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76877

摘要： Systems and methods to remove or lessen the size of metal particles that have formed on, and to limit the rate at which metal particles form or grow on, workpiece surface influencing devices used during electrodeposition are presented. According to an exemplary method, the workpiece surface influencing device is occasionally placed in contact with a conditioning substrate coated with an inert material, and the bias applied to the electrodeposition system is reversed. According to another exemplary method, the workpiece surface influencing device is conditioned using mechanical contact members, such as brushes, and conditioning of the workpiece surface influencing device occurs, for example, through physical brushing of the workpiece surface influencing device with the brushes. According to a further exemplary method, the workpiece surface influencing device is rotated in different direction during electrodeposition.

摘要翻译： 提出了用于去除或减小在电沉积期间使用的工件表面影响装置上形成金属颗粒的尺寸并限制金属颗粒形成或生长的速率的系统和方法。 根据示例性的方法，工件表面影响装置偶尔地与涂覆有惰性材料的调理基板接触，并且施加到电沉积系统的偏压被反转。 根据另一示例性方法，使用诸如刷子的机械接触构件对工件表面影响装置进行调节，并且例如通过用刷子物理刷刷工件表面影响装置来发生工件表面影响装置的调节。 根据另一示例性方法，在电沉积期间，工件表面影响装置在不同方向上旋转。

公开(公告)号：US06815354B2

公开(公告)日：2004-11-09

申请号：US10282976

申请日：2002-10-28

申请人： Cyprian Uzoh ,  Bulent M. Basol ,  Homayoun Talieh

发明人： Cyprian Uzoh ,  Bulent M. Basol ,  Homayoun Talieh

IPC分类号： H01L2100

CPC分类号： H01L21/7684 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process for forming a conductive structure on a substrate is provided. The substrate has a copper seed layer that is partially exposed through a plurality of openings in a masking layer such as a photoresist. The masking layer is formed on the seed layer. The process electroplates copper through the openings and onto the seed layer. During the copper electroplating process the surface of the masking layer is mechanically swept. The process forms planar conductive material deposits filling the plurality of holes in the masking layer. The upper ends of the conductive deposits are substantially co-planar.

摘要翻译： 提供了在基板上形成导电结构的工艺。 衬底具有通过诸如光致抗蚀剂的掩模层中的多个开口部分暴露的铜籽晶层。 掩蔽层形成在种子层上。 该方法通过开口将铜电镀到种子层上。 在铜电镀过程中，屏蔽层的表面被机械扫掠。 该过程形成填充掩模层中的多个孔的平面导电材料沉积物。 导电沉积物的上端基本上是共面的。

公开(公告)号：US06610190B2

公开(公告)日：2003-08-26

申请号：US09760757

申请日：2001-01-17

申请人： Bulent M. Basol ,  Cyprian Uzoh ,  Homayoun Talieh

发明人： Bulent M. Basol ,  Cyprian Uzoh ,  Homayoun Talieh

IPC分类号： C25D508

CPC分类号： C25D5/02 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/76877

摘要： A system for depositing materials on a surface of a wafer or removing materials from the surface of a wafer includes an electrode, a shaping plate, a liquid solution contained between the electrode and the wafer surface, and electrical contact members contacting selected locations on the wafer surface. The shaping plate is supported between the electrode and the wafer surface such that an upper surface of the shaping plate faces the wafer surface. The shaping plate can have a plurality of channels where each puts the wafer surface in a fluid communication with the electrode. The electrical contact members contact the selected locations on the wafer surface through a recessed edge of the shaping plate such that when the wafer is rotated, the selected contact locations move over the shaping plate and are plated under an applied potential. Advantages of the invention include substantially full surface treatment of the wafer.

摘要翻译： 用于在晶片的表面上沉积材料或从晶片表面去除材料的系统包括电极，成形板，包含在电极和晶片表面之间的液体溶液以及与晶片上的选定位置接触的电接触元件 表面。 成形板支撑在电极和晶片表面之间，使得成形板的上表面面向晶片表面。 成形板可以具有多个通道，其中每个通道将晶片表面与电极流体连通。 电接触构件通过成形板的凹入边缘接触晶片表面上的选定位置，使得当晶片旋转时，所选择的接触位置在成形板上移动并在施加电位下进行电镀。 本发明的优点包括晶片的基本全表面处理。

公开(公告)号：US06497800B1

公开(公告)日：2002-12-24

申请号：US09685934

申请日：2000-10-11

申请人： Homayoun Talieh ,  Cyprian Uzoh ,  Bulent M. Basol

发明人： Homayoun Talieh ,  Cyprian Uzoh ,  Bulent M. Basol

IPC分类号： C25D1700

CPC分类号： B23H3/04 ,  B23H5/08 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  C25D17/005 ,  C25F7/00 ,  H01L21/2885

摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

摘要翻译： 可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。 第一导电元件可以具有相同或不同构造的多个电触点，或者可以是导电焊盘的形式，并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。 当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时，导电材料沉积在衬底表面上。 可以使施加在阳极和阴极之间的电压的极性反转，从而可以对沉积的导电材料进行电蚀刻。

公开(公告)号：US6103628A

公开(公告)日：2000-08-15

申请号：US201928

申请日：1998-12-01

申请人： Homayoun Talieh

发明人： Homayoun Talieh

IPC分类号： B24B21/04 ,  B24B37/04 ,  B24B47/04 ,  H01L21/304 ,  H01L21/00

CPC分类号： B24B21/04 ,  B24B37/04 ,  B24B47/04

摘要： The present invention is directed to a method and apparatus for polishing a surface of a semiconductor wafer using a pad moveable in both forward and reverse directions. In both VLSI and ULSI applications, polishing the wafer surface to complete flatness is highly desirable. The forward and reverse movement of the polishing pad provides superior planarity and uniformity to the surface of the wafer. The wafer surface is pressed against the polishing pad as the pad moves in both forward and reverse directions while polishing the wafer surface. During polishing, the wafer is supported by a wafer housing having a novel wafer loading and unloading method.

摘要翻译： 本发明涉及一种使用可沿正向和反向两者可移动的衬垫抛光半导体晶片的表面的方法和装置。 在VLSI和ULSI应用中，非常需要抛光晶片表面以完成平坦度。 抛光垫的正向和反向运动为晶片的表面提供了优异的平面性和均匀性。 当衬垫沿着正向和反向移动同时抛光晶片表面时，晶片表面被压靠在抛光垫上。 在抛光期间，晶片由具有新颖的晶片装载和卸载方法的晶片壳体支撑。