公开(公告)号：US08188491B2

公开(公告)日：2012-05-29

申请号：US13009111

申请日：2011-01-19

申请人： Satoshi Seo ,  Daisuke Kumaki ,  Hisao Ikeda ,  Junichiro Sakata

发明人： Satoshi Seo ,  Daisuke Kumaki ,  Hisao Ikeda ,  Junichiro Sakata

IPC分类号： H01L35/24

CPC分类号： H01L27/156 ,  H01L27/322 ,  H01L27/3244 ,  H01L51/0059 ,  H01L51/0071 ,  H01L51/0081 ,  H01L51/5088 ,  H01L2251/5315 ,  H01L2251/558

摘要： Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.

摘要翻译： 发光元件具有由于发光元件内的散射光或反射光而导致其光提取效率低的问题。 需要通过新的方法来增强发光元件的光提取效率。 根据本发明，发光元件包括第一层产生孔，包括用于每种发射颜色的发光层的第二层和在阳极和阴极之间产生电子的第三层，以及第一层 层根据每个发射颜色的包含发光层的各层而不同。 使用其中混合有机化合物和金属氧化物的层作为第一层，因此即使当厚度增加时驱动电压也不会增加，这是优选的。

公开(公告)号：US08178869B2

公开(公告)日：2012-05-15

申请号：US12647743

申请日：2009-12-28

申请人： Hisao Ikeda ,  Junichiro Sakata

发明人： Hisao Ikeda ,  Junichiro Sakata

IPC分类号： H01L35/24 ,  H01L51/00

CPC分类号： H01L51/5088 ,  H01L51/5048

摘要： A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers between a pair of electrodes; and at least one layer among the plurality of layers contains one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. Such the light-emitting element can suppress the crystallization of a layer containing one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. As a result, a lifetime of the light-emitting element can be extended.

公开(公告)号：US08015261B2

公开(公告)日：2011-09-06

申请号：US10495981

申请日：2002-11-27

申请人： Tetsuya Kohno ,  Shinichi Iriya ,  Junichiro Sakata ,  Takatoshi Nakamura

发明人： Tetsuya Kohno ,  Shinichi Iriya ,  Junichiro Sakata ,  Takatoshi Nakamura

IPC分类号： G06F15/16

CPC分类号： G06F17/30761 ,  G06F17/30017 ,  G06F17/30864

摘要： An information processing apparatus comprising a first sending/receiving means for a first information processing apparatus; a second sending/receiving means for a second information processing apparatus; a first recording means for recording normal content data and restricted content data; a second recording means for recording information required for selecting data; an updating means for updating the information recorded; and a selection means for selecting data to be sent to said first information processing apparatus from the first content data and the second content data recorded by said first recording means based on the information recorded by said second recording means in response to a request signal from said first information processing apparatus received by said first sending/receiving means.

摘要翻译： 一种信息处理装置，包括：第一信息处理装置的第一发送/接收装置; 用于第二信息处理设备的第二发送/接收装置; 用于记录正常内容数据和受限内容数据的第一记录装置; 用于记录选择数据所需的信息的第二记录装置; 更新装置，用于更新记录的信息; 以及选择装置，用于根据来自所述第一记录装置的请求信号，根据由所述第二记录装置记录的信息，从第一内容数据和第二内容数据中选择要发送给所述第一信息处理装置的数据 由所述第一发送/接收装置接收的第一信息处理装置。

公开(公告)号：US20110140598A1

公开(公告)日：2011-06-16

申请号：US13034871

申请日：2011-02-25

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kaoru Tsuchiya

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kaoru Tsuchiya

IPC分类号： H01J1/62

CPC分类号： H01L27/3246 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3281 ,  H01L27/3283 ,  H01L27/3288 ,  H01L51/52 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5253 ,  H01L51/5262 ,  H01L2251/5323

摘要： It is an object of the present invention is to provide a light-emitting device in which high luminance can be obtained with low power consumption by improving the extraction efficiency. A light-emitting device of the invention comprises an insulating film, a plurality of first electrodes being in contact with the insulating film and formed on the insulating film to be in parallel, an electroluminescent layer formed over the plurality of first electrodes, and a plurality of second electrodes intersecting with the plurality of first electrodes and formed over the electroluminescent layer in parallel, wherein the insulating film contains nitrogen and silicon and the first electrodes contain a conductive transparent oxide material and silicon oxide.

摘要翻译： 本发明的目的是提供一种通过提高提取效率可以以低功耗获得高亮度的发光装置。 本发明的发光器件包括绝缘膜，多个第一电极与绝缘膜接触并形成在绝缘膜上并联，形成在多个第一电极上的电致发光层，以及多个第一电极 的第二电极与所述多个第一电极相交并并联形成在所述电致发光层上，其中所述绝缘膜包含氮和硅，并且所述第一电极包含导电透明氧化物材料和氧化硅。

公开(公告)号：US07950034B2

公开(公告)日：2011-05-24

申请号：US11119802

申请日：2005-05-03

申请人： Ikuya Sano ,  Ryoji Amemiya ,  Junichiro Sakata ,  Hiroshi Nagatani

发明人： Ikuya Sano ,  Ryoji Amemiya ,  Junichiro Sakata ,  Hiroshi Nagatani

IPC分类号： G06F3/00 ,  G06F13/00 ,  H04N5/445 ,  G06F3/048

CPC分类号： H04N21/235 ,  G11B27/034 ,  G11B27/34 ,  H04N21/435

摘要： An information processing apparatus for providing controls to have contents recorded in a recording medium for recording one or more broadcast programs aired in the past as data displayed on a specified display device, includes: an acquiring section to acquire program information for one or more broadcast programs recorded in the recording medium; a program table generating section to generate a first table in which columns in one orthogonal direction are allocated to broadcast stations and the other are to time zones, generate a first program table by allocating program columns for the broadcast program on each of one or more areas identified with the one or more program information acquired by the acquiring section in the entire area constituting the first table, and outputting the first program table as first image data; and a display control section to control, while the control is executed, a background image for second image data displayed on the specified display device, data constituting each of the one or more program columns of the first image data is synthesized on corresponding data in the second image data with a first transmission percentage, the remaining data is synthesized on corresponding data in the second image data with a second transmission rate higher than the first transmission rate, and an image corresponding to the resultant synthesized image data is displayed on the specified display device.

摘要翻译： 一种信息处理设备，用于提供控制以将记录在用于记录一个或多个广播节目的记录介质中的内容记录在指定的显示设备上显示的数据，包括：获取部分，用于获取一个或多个广播节目的节目信息 记录在记录介质中; 节目表生成部，生成将一个正交方向的列分配给广播电台的第一表，另一个是时区，生成第一节目表，通过在广播节目的一个或多个区域中分配节目列，生成第一节目表 由构成第一表的整个区域中由获取部分获取的一个或多个节目信息识别，并将第一节目表作为第一图像数据输出; 以及显示控制部，其在执行所述控制的同时，控制在所述指定的显示装置上显示的第二图像数据的背景图像，构成所述第一图像数据的所述一个或多个程序列的每一个的数据， 具有第一传输百分比的第二图像数据，剩余数据以高于第一传输速率的第二传输速率在第二图像数据中的相应数据上合成，并且与所得到的合成图像数据相对应的图像被显示在指定的显示器上 设备。

公开(公告)号：US20110108834A1

公开(公告)日：2011-05-12

申请号：US12917569

申请日：2010-11-02

申请人： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

IPC分类号： H01L29/24

CPC分类号： H01L29/45 ,  G02F1/1368 ,  H01L29/7869

摘要： An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using an oxide of a metal whose work function is lower than the work function of the oxide semiconductor layer or an oxide of an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.

摘要翻译： 在包括氧化物半导体层的薄膜晶体管中，目的是减少氧化物半导体层与与氧化物半导体层电连接的源电极层和漏电极层之间的接触电阻。 源极和漏极层具有两层或多层的层叠结构，其中使用其功函数低于氧化物半导体层的功函数的金属的氧化物形成与氧化物半导体层接触的层 或含有这种金属的合金的氧化物。 使用选自Al，Cr，Cu，Ta，Ti，Mo或W的元素形成与源极和漏极电极层的氧化物半导体层接触的层以外的层，包含任何这些元素作为 组分，包含任何这些元素组合的合金等。

公开(公告)号：US20110084272A1

公开(公告)日：2011-04-14

申请号：US12900136

申请日：2010-10-07

申请人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC分类号： H01L29/22 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618

摘要： An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.

摘要翻译： 目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。 薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或 包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极 。 金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。

公开(公告)号：US07902747B2

公开(公告)日：2011-03-08

申请号：US10967143

申请日：2004-10-19

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kaoru Tsuchiya

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kaoru Tsuchiya

IPC分类号： H01J1/62

CPC分类号： H01L27/3246 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3281 ,  H01L27/3283 ,  H01L27/3288 ,  H01L51/52 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5253 ,  H01L51/5262 ,  H01L2251/5323

摘要： It is an object of the present invention is to provide a light-emitting device in which high luminance can be obtained with low power consumption by improving the extraction efficiency. A light-emitting device of the invention comprises an insulating film, a plurality of first electrodes being in contact with the insulating film and formed on the insulating film to be in parallel, an electroluminescent layer formed over the plurality of first electrodes, and a plurality of second electrodes intersecting with the plurality of first electrodes and formed over the electroluminescent layer in parallel, wherein the insulating film contains nitrogen and silicon and the first electrodes contain a conductive transparent oxide material and silicon oxide.

摘要翻译： 本发明的目的是提供一种通过提高提取效率可以以低功耗获得高亮度的发光装置。 本发明的发光器件包括绝缘膜，多个第一电极与绝缘膜接触并形成在绝缘膜上并联，形成在多个第一电极上的电致发光层，以及多个第一电极 的第二电极与所述多个第一电极相交并并联形成在所述电致发光层上，其中所述绝缘膜包含氮和硅，并且所述第一电极包含导电透明氧化物材料和氧化硅。

公开(公告)号：US20110037068A1

公开(公告)日：2011-02-17

申请号：US12846585

申请日：2010-07-29

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Hideaki Kuwabara

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L27/3262 ,  G06F1/163 ,  H01L21/02614 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696 ,  H04B1/16

摘要： One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.

摘要翻译： 一个目的是提供具有能够在布线之间充分降低寄生电容的结构的半导体器件。 在包括作为部分或全部氧化的金属薄膜的第一层的堆叠层和氧化物半导体层的底栅型薄膜晶体管中，形成以下氧化物绝缘层：作为沟道的氧化物绝缘层 与氧化物半导体层的与栅电极层重叠的部分结合并接触的保护层; 以及覆盖层叠的氧化物半导体层的周边部分和侧面的氧化物绝缘层。

公开(公告)号：US07850501B2

公开(公告)日：2010-12-14

申请号：US11687204

申请日：2007-03-16

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Junichiro Sakata ,  Yoshiharu Hirakata ,  Norihito Sone

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Junichiro Sakata ,  Yoshiharu Hirakata ,  Norihito Sone

IPC分类号： H01J1/62

CPC分类号： H01L27/3244 ,  H01L27/322 ,  H01L27/3276 ,  H01L51/5048 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/52 ,  H01L51/5206 ,  H01L51/5215 ,  H01L51/5218 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/56

摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.

摘要翻译： 提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。 这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度 形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。 根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。