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公开(公告)号：US20100124796A1
公开(公告)日：2010-05-20
申请号：US12693818
申请日：2010-01-26
IPC分类号： H01L21/28
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译： 提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。 这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度 形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。 根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。
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公开(公告)号：US08759131B2
公开(公告)日：2014-06-24
申请号：US12693818
申请日：2010-01-26
IPC分类号： H01L21/28
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译： 提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。 这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度 形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。 根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。
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公开(公告)号：US20070164671A1
公开(公告)日：2007-07-19
申请号：US11687204
申请日：2007-03-16
IPC分类号： H01J1/62
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译： 提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。 这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度 形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。 根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。
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公开(公告)号：US20050084994A1
公开(公告)日：2005-04-21
申请号：US10967281
申请日：2004-10-19
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： It is an object of the present invention to provide a method for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The present invention provides a method for manufacturing a light-emitting device comprising the steps of forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer, wherein the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译： 本发明的目的是提供一种制造具有高内部量子效率，消耗较少功率，具有高亮度并具有高可靠性的发光装置的方法。 本发明提供一种制造发光器件的方法，包括以下步骤：形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成氧化硅密度较高的阻挡层 比在导电透光氧化物层上的导电透光氧化物层中的导电透光氧化物层中形成具有导电透光氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热的 阳极，并且在所述电致发光层上形成阴极，其中所述阻挡层形成在所述电致发光层和所述导电透光氧化物层之间。
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公开(公告)号：US07850501B2
公开(公告)日：2010-12-14
申请号：US11687204
申请日：2007-03-16
IPC分类号： H01J1/62
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译： 提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。 这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度 形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。 根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。
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公开(公告)号：US07205716B2
公开(公告)日：2007-04-17
申请号：US10967281
申请日：2004-10-19
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译： 提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。 这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度 形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。 根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。
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公开(公告)号：US20060214158A1
公开(公告)日：2006-09-28
申请号：US11371520
申请日：2006-03-09
IPC分类号： H01L29/08
CPC分类号： G02F1/1362 , H01L45/00 , H01L51/0054 , H01L51/006
摘要： The purpose of the present invention is to provide a nonlinear element with high productivity, which can be driven at low voltage, an element substrate including the nonlinear element, and a liquid crystal display device including the element substrate. A structure of the nonlinear element of the present invention includes a layer formed using a composite material containing an inorganic compound and an organic compound between a first electrode and a second electrode. Further, as the composite material containing the inorganic compound and the organic compound, a composite material, which exhibits nonlinear behavior in both cases of applying forward bias voltage and reverse bias voltage, is used.
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8.发明授权Nonlinear element, element substrate including the nonlinear element, and display device 有权非线性元件，包括非线性元件的元件基板和显示装置公开(公告)号：US07626198B2
公开(公告)日：2009-12-01
申请号：US11371520
申请日：2006-03-09
IPC分类号： H01L51/10
CPC分类号： G02F1/1362 , H01L45/00 , H01L51/0054 , H01L51/006
摘要： The purpose of the present invention is to provide a nonlinear element with high productivity, which can be driven at low voltage, an element substrate including the nonlinear element, and a liquid crystal display device including the element substrate. A structure of the nonlinear element of the present invention includes a layer formed using a composite material containing an inorganic compound and an organic compound between a first electrode and a second electrode. Further, as the composite material containing the inorganic compound and the organic compound, a composite material, which exhibits nonlinear behavior in both cases of applying forward bias voltage and reverse bias voltage, is used.
摘要翻译： 本发明的目的是提供一种可以在低电压下驱动的具有高生产率的非线性元件，包括该非线性元件的元件基板以及包括元件基板的液晶显示装置。 本发明的非线性元件的结构包括使用在第一电极和第二电极之间含有无机化合物和有机化合物的复合材料形成的层。 此外，作为含有无机化合物和有机化合物的复合材料，使用在提供正偏压和反偏压两者的情况下表现出非线性特性的复合材料。
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公开(公告)号：US09448433B2
公开(公告)日：2016-09-20
申请号：US12978770
申请日：2010-12-27
申请人： Shunpei Yamazaki , Jun Koyama , Yoshiharu Hirakata
发明人： Shunpei Yamazaki , Jun Koyama , Yoshiharu Hirakata
IPC分类号： G09G5/42 , G02F1/1335 , G09G3/34
CPC分类号： G09G3/3413 , G02F1/133345 , G02F1/1334 , G02F1/133514 , G02F1/133555 , G02F1/1337 , G02F1/134309 , G02F1/136286 , G02F1/1368 , G02F2001/133302 , G02F2201/121 , G02F2201/123 , G02F2203/01 , G02F2203/04 , G09G3/2003 , G09G3/3406 , G09G3/3677 , G09G2300/0426 , G09G2310/0237 , G09G2310/08 , G09G2320/0247 , G09G2320/0261 , G09G2320/064 , G09G2320/0646 , G09G2320/103 , G09G2330/021 , G09G2330/022
摘要： An object is to provide a liquid crystal display device which can recognize image display even when the liquid crystal display device is used in a dim environment. In one pixel, a pixel electrode including both of a region where incident light through a liquid crystal layer is reflected and a transmissive region is provided, and image display can be performed in both modes: the reflective mode where external light is used as an illumination light source; and the transmissive mode where the backlight is used as an illumination light source. When there is external light with insufficient brightness, that is, in a dim environment, the backlight emits weak light and an image is displayed in the reflective mode, whereby image display can be performed.
摘要翻译： 本发明的目的是提供一种液晶显示装置，即使在液晶显示装置在昏暗的环境中使用时也能够识别图像显示。 在一个像素中，包括反射通过液晶层的入射光的区域和设置有透射区域的像素电极的像素电极，并且可以以两种模式执行图像显示：将外部光用作照明的反射模式 光源; 以及将背光用作照明光源的透射模式。 当存在亮度不足的外部光，即，在昏暗的环境中，背光发出弱光，并且以反射模式显示图像，由此可以执行图像显示。
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公开(公告)号：US08854593B2
公开(公告)日：2014-10-07
申请号：US13278219
申请日：2011-10-21
IPC分类号： G02F1/1339 , H01L27/12 , G02F1/1345
CPC分类号： G02F1/13454 , G02F1/1339 , H01L27/12 , H01L27/1214 , H01L27/1248
摘要： In an active matrix semiconductor display device in which pixel TFTs and driver circuit TFT are formed on the same substrate in an integral manner, the cell gap is controlled by gap retaining members that are disposed between a pixel area and driver circuit areas. This makes it possible to provide a uniform cell thickness profile over the entire semiconductor display device. Further, since conventional grainy spacers are not used, stress is not imposed on the driver circuit TFTs when a TFT substrate and an opposed substrate are bonded together. This prevents the driver circuit TFTs from being damaged.
摘要翻译： 在其中像素TFT和驱动电路TFT以整体方式形成在同一基板上的有源矩阵半导体显示装置中，通过设置在像素区域和驱动电路区域之间的间隙保持构件来控制单元间隙。 这使得可以在整个半导体显示装置上提供均匀的电池厚度分布。 此外，由于不使用常规的颗粒状间隔物，当TFT基板和相对的基板接合在一起时，驱动电路TFT不施加应力。 这防止驱动电路TFT被损坏。
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