公开(公告)号：US08592917B2

公开(公告)日：2013-11-26

申请号：US13235302

申请日：2011-09-16

申请人： Syotaro Ono ,  Wataru Saito ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita ,  Toshiyuki Naka

发明人： Syotaro Ono ,  Wataru Saito ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita ,  Toshiyuki Naka

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/42376 ,  H01L29/4238

摘要： According to an embodiment, a semiconductor device includes a second semiconductor layer provided on a first semiconductor layer and including first pillars and second pillars. A first control electrode is provided in a trench of the second semiconductor layer and a second control electrode is provided on the second semiconductor layer and connected to the first control electrode. A first semiconductor region is provided on a surface of the second semiconductor layer except for a portion under the second control electrode. A second semiconductor region is provided on a surface of the first semiconductor region, the second semiconductor region being apart from the portion under the second control electrode and a third semiconductor region is provided on the first semiconductor region. A first major electrode is connected electrically to the first semiconductor layer and a second major electrode is connected electrically to the second and the third semiconductor region.

公开(公告)号：US08412067B2

公开(公告)日：2013-04-02

申请号：US12728398

申请日：2010-03-22

申请人： Miho Watanabe ,  Makoto Furuki ,  Naoyuki Egusa ,  Tetsuro Kodera ,  Takashi Matsubara ,  Shinji Hasegawa

发明人： Miho Watanabe ,  Makoto Furuki ,  Naoyuki Egusa ,  Tetsuro Kodera ,  Takashi Matsubara ,  Shinji Hasegawa

IPC分类号： G03G21/20 ,  G03G15/20

CPC分类号： G03G15/2007

摘要： According to an aspect of the invention, a laser fixing device includes a laser beam generating device and an airflow generating unit. The laser beam generating device generates laser beams and irradiates a recording medium transported with the laser beams. The airflow generating unit generates airflow flowing between the laser beam generating device and the recording medium. A flow speed of the airflow in a transport direction of the recording medium in an irradiation position of the laser beams is higher than a transport speed of the recording medium.

摘要翻译： 根据本发明的一个方面，激光定影装置包括激光束产生装置和气流发生单元。 激光束产生装置产生激光束并照射用激光束传送的记录介质。 气流发生单元产生在激光束产生装置和记录介质之间流动的气流。 在激光束的照射位置处的记录介质的传送方向上的气流的流速高于记录介质的传送速度。

公开(公告)号：US08343761B2

公开(公告)日：2013-01-01

申请号：US13187677

申请日：2011-07-21

申请人： Masayuki Tsuchiya ,  Masami Suzuki ,  Kenji Yoshida ,  Etsuko Fujii ,  Miho Watanabe ,  Koichi Matsubara ,  Yu Jau Chen ,  Juliana Sim

发明人： Masayuki Tsuchiya ,  Masami Suzuki ,  Kenji Yoshida ,  Etsuko Fujii ,  Miho Watanabe ,  Koichi Matsubara ,  Yu Jau Chen ,  Juliana Sim

IPC分类号： C12N5/06 ,  A01K67/00 ,  C12N5/00

CPC分类号： A01K67/027 ,  A01K2267/01 ,  A61K35/16 ,  C07K16/00 ,  C07K16/30

摘要： An objective of the present invention is to facilitate the acquisition of antibody-producing cells that are infiltrating virus-infected cells, cancer cells, abnormal cells forming a benign hyperplasia, and the like, and to improve the efficiency of the production of antibodies as well as nucleic acids encoding them from the antibody-producing cells.The present inventors discovered that, when cancer tissues comprising infiltrating lymphocytes are transplanted into highly immunodeficient animals that do not have T cells, B cells, and NK cells and further exhibit a low IFN production ability, the differentiation and proliferation of infiltrating lymphocytes are unexpectedly promoted, and the number of plasma cells that produce antibodies recognizing cancer tissues increases dramatically, plasma cells can be separated easily, and antibodies or nucleic acids encoding them can be easily prepared from the plasma cells.

摘要翻译： 本发明的目的是便于获得渗透病毒感染细胞的抗体产生细胞，癌细胞，形成良性增生的异常细胞等，以及提高抗体生产的效率 作为从抗体产生细胞编码它们的核酸。 本发明人发现，当将包含浸润性淋巴细胞的癌组织移植到不具有T细胞，B细胞和NK细胞的高度免疫缺陷的动物中并且进一步表现出低的IFN产生能力时，意外地促进了浸润性淋巴细胞的分化和增殖 并且产生识别癌组织的抗体的浆细胞的数量急剧增加，可以容易地分离浆细胞，并且可以容易地从浆细胞制备抗体或编码它们的核酸。

公开(公告)号：US08010006B2

公开(公告)日：2011-08-30

申请号：US12500229

申请日：2009-07-09

申请人： Takashi Matsubara ,  Miho Watanabe ,  Shinji Hasegawa ,  Makoto Furuki

发明人： Takashi Matsubara ,  Miho Watanabe ,  Shinji Hasegawa ,  Makoto Furuki

IPC分类号： G03G15/20

CPC分类号： G03G15/2007

摘要： A fixing device includes: a fixing unit that irradiates light to a color material transferred to a medium at a position specified by image data, to fix the color material on the medium; and a control unit that controls irradiation of light of the fixing unit so that an energy of light irradiated to an image-forming area on the medium including an area in which the color material has been transferred at the position specified by the image data is lower than an energy of light irradiated to a non image-forming area on the medium other than the image-forming area.

摘要翻译： 定影装置包括：定影单元，其将光转印到由图像数据指定的位置处转印到介质上的彩色材料，以将彩色材料固定在介质上; 以及控制单元，其控制所述定影单元的光的照射，使得照射到所述介质上的图像形成区域的光的能量包括在由所述图像数据指定的位置处已经传送了所述颜色材料的区域的介质的能量较低 比照射到图像形成区域以外的介质上的非图像形成区域的光的能量。

公开(公告)号：US07919824B2

公开(公告)日：2011-04-05

申请号：US12403881

申请日：2009-03-13

申请人： Syotaro Ono ,  Wataru Saito ,  Nana Hatano ,  Masaru Izumisawa ,  Yasuto Sumi ,  Hiroshi Ohta ,  Wataru Sekine ,  Miho Watanabe

发明人： Syotaro Ono ,  Wataru Saito ,  Nana Hatano ,  Masaru Izumisawa ,  Yasuto Sumi ,  Hiroshi Ohta ,  Wataru Sekine ,  Miho Watanabe

IPC分类号： H01L27/088

CPC分类号： H01L29/66712 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/7395 ,  H01L29/7811

摘要： A semiconductor device includes a super junction region that has a first-conductivity-type first semiconductor pillar region and a second-conductivity-type second semiconductor pillar region alternately provided on the semiconductor substrate. The first semiconductor pillar region and the second semiconductor pillar region in a termination region have a lamination form resulting from alternate lamination of the first semiconductor pillar region and the second semiconductor pillar region on the top surface of the semiconductor substrate. The first semiconductor pillar region and/or the second semiconductor pillar region at a corner part of the termination region exhibit an impurity concentration distribution such that a plurality of impurity concentration peaks appear periodically. The first semiconductor pillar region and/or the second semiconductor pillar region at a corner part of the termination region have an impurity amount such that it becomes smaller as being closer to the circumference of the corner part.

摘要翻译： 半导体器件包括具有交替设置在半导体衬底上的第一导电型第一半导体柱区域和第二导电型第二半导体柱区域的超结区域。 终端区域中的第一半导体柱区域和第二半导体柱区域具有由半导体衬底的顶表面上的第一半导体柱区域和第二半导体柱区域的交替层叠形成的叠层形式。 终端区域的角部处的第一半导体柱区域和/或第二半导体柱区域显示杂质浓度分布，使得多个杂质浓度峰值周期性出现。 终端区域的角部处的第一半导体柱区域和/或第二半导体柱区域具有使得随着角部更靠近圆周而变小的杂质量。

公开(公告)号：US20100187604A1

公开(公告)日：2010-07-29

申请号：US12692527

申请日：2010-01-22

申请人： SYOTARO ONO ,  Wataru Saito ,  Nana Hatano ,  Hiroshi Ohta ,  Miho Watanabe

发明人： SYOTARO ONO ,  Wataru Saito ,  Nana Hatano ,  Hiroshi Ohta ,  Miho Watanabe

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7397

摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed separately in the first semiconductor region. A difference between a charge quantity expressed by an integral value of a net activated doping concentration in the second semiconductor regions in the surface direction of the semiconductor substrate and a charge quantity expressed by an integral value of a net activated doping concentration in the first semiconductor region in the surface direction of the semiconductor substrate is always a positive quantity and becomes larger from the depth of the first junction plane to a depth of a second junction plane on an opposite side from the first junction plane.

摘要翻译： 半导体器件包括第一导电类型的半导体衬底，半导体衬底上的第一导电类型的第一半导体区域和分开设置在第一半导体区域中的多个第二导电类型的第二半导体区域。 由半导体衬底的表面方向上的第二半导体区域中的净活化掺杂浓度的积分值表示的电荷量与由第一半导体区域中的净活化掺杂浓度的积分值表示的电荷量之间的差异 在半导体基板的表面方向总是为正量，并且从第一接合面的深度到与第一接合面相反的一侧的第二接合面的深度变得更大。

公开(公告)号：US07285899B2

公开(公告)日：2007-10-23

申请号：US10526046

申请日：2003-09-01

申请人： Kiyoshi Nishimura ,  Miho Watanabe ,  Yusuke Shibahara ,  Kiyoshi Ootani ,  Ichiro Yamada ,  Takashi Yorifuji ,  Naoyuki Toda ,  Hajime Oono ,  Kazuo Egawa ,  Masahiko Yoshida

发明人： Kiyoshi Nishimura ,  Miho Watanabe ,  Yusuke Shibahara ,  Kiyoshi Ootani ,  Ichiro Yamada ,  Takashi Yorifuji ,  Naoyuki Toda ,  Hajime Oono ,  Kazuo Egawa ,  Masahiko Yoshida

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01J61/307 ,  H01J9/247 ,  H01J61/30 ,  H01J61/322

摘要： A fluorescent lamp includes: a bulb including bent and straight-tube portions having an external tube diameter of 12 to 20 mm and a tube length of 800 to 2500 mm. The straight portions are disposed generally within the same plane through the bent portions. A pair of end portions with electrodes sealed therein form a single discharge path through the straight tube and bent portions. A phosphor layer is formed on the inner face of the bulb, and a discharge medium including mercury is sealed in the bulb. Thermal deterioration of the phosphor layer formed at the straight tube portions is reduced so deterioration of the initial light flux is suppressed, allowing lighting at higher efficiency. With the above configuration, a fluorescent lamp is compact and capable of light with high efficiency, and with improved light output properties. A light fixture uses this fluorescent lamp.

摘要翻译： 荧光灯包括：灯管，其包括具有12至20mm的外管直径和800至2500mm的管长的弯曲管和直管部。 直线部分通过弯曲部分大致设置在同一平面内。 具有密封在其中的电极的一对端部形成通过直管和弯曲部分的单个放电路径。 荧光体层形成在灯泡的内表面，并且包含汞的放电介质被密封在灯泡中。 在直管部形成的荧光体层的热劣化减少，从而抑制初始光通量的劣化，能够以较高的效率照明。 通过上述结构，荧光灯结构紧凑，能够高效率地发光，并具有改善的光输出特性。 灯具使用这种荧光灯。

公开(公告)号：US20060164000A1

公开(公告)日：2006-07-27

申请号：US10526046

申请日：2003-09-01

申请人： Kiyoshi Nishimura ,  Miho Watanabe ,  Yusuke Shibahara ,  Kiyoshi Ootani ,  Ichiro Yamada ,  Takashi Yorifuji ,  Naoyuki Toda ,  Hajime Oono ,  Kazuo Egawa ,  Masahiko Yoshida

发明人： Kiyoshi Nishimura ,  Miho Watanabe ,  Yusuke Shibahara ,  Kiyoshi Ootani ,  Ichiro Yamada ,  Takashi Yorifuji ,  Naoyuki Toda ,  Hajime Oono ,  Kazuo Egawa ,  Masahiko Yoshida

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01J61/307 ,  H01J9/247 ,  H01J61/30 ,  H01J61/322

摘要： A fluorescent lamp 1 comprises: a bulb 2 formed by heating bent-portion-formation preordination portions of a single straight-tube-shaped bulb 2a having an external tube diameter of 12 to 20 mm and a tube length of 800 to 2500 mm, forming a plurality of bent portions 2c and straight tube portions 2b adjacent to the bent portions 2c by bending processing, such that the straight portions 2b are disposed generally within the same plane by way of the bent portions 2c, forming in close proximity a pair of end portions 2d and 2d with electrodes 5 and 5 sealed in so as to form a single discharge path through the straight tube portions 2b and bent portions 2c, forming a phosphor layer 4 on the inner face of the bulb, and sealing a discharge medium including mercury; and a base 6 provided on the end portions 2d and 2d of the bulb 2; whereby thermal deterioration of the phosphor layer 4 formed at the straight tube portions 2b is reduced so deterioration of the initial light flux is suppressed, allowing lighting at higher efficiency. According to the above configuration, a fluorescent lamp which is compact and capable of light with high efficiency, and with improved light output properties, and a light fixture using this fluorescent lamp, can be provided.

摘要翻译： 荧光灯1包括：灯管2，其通过加热具有12至20mm的外管直径和800至2500mm的管长的单个直管状灯泡2a的弯曲部形成前置部分而形成， 通过弯曲加工形成与弯曲部分2c相邻的多个弯曲部分2c和直管部分2b，使得直线部分2b通过弯曲部分2c大致设置在同一平面内，形成在 靠近一对端部2d和2d，其中电极5和5被密封以便通过直管部分2b和弯曲部分2c形成单个放电路径，在内表面上形成荧光体层4 灯泡，并密封包括汞的放电介质; 以及设置在灯泡2的端部2d和2d上的基座6; 由此，形成在直管部2b处的荧光体层4的热劣化减少，从而抑制初始光通量的劣化，能够以更高的效率照明。 根据上述结构，可以提供一种紧凑且能够高效率并且具有改善的光输出性能的荧光灯和使用该荧光灯的灯具。

公开(公告)号：US08829608B2

公开(公告)日：2014-09-09

申请号：US13051987

申请日：2011-03-18

申请人： Wataru Saito ,  Syotaro Ono ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

发明人： Wataru Saito ,  Syotaro Ono ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42372 ,  H01L29/66734

摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer of the second conductivity type, a fifth semiconductor layer of the first conductivity type, a control electrode, a first main electrode, a second main electrode, and a sixth semiconductor layer of the first conductivity type. The second semiconductor layer and the third semiconductor layer are alternately provided on the first semiconductor layer in a direction substantially parallel to a major surface of the first semiconductor layer. The fourth semiconductor layer is provided on the second semiconductor layer and the third semiconductor layer. The fifth semiconductor layer is selectively provided on a surface of the fourth semiconductor layer. The control electrode is provided in a trench via an insulating film. The trench penetrates through the fourth semiconductor layer from a surface of the fifth semiconductor layer and is in contact with the second semiconductor layer. The first main electrode is connected to the first semiconductor layer. The second main electrode is connected to the fourth semiconductor layer and the fifth semiconductor layer. The sixth semiconductor layer is provided between the fourth semiconductor layer and the second semiconductor layer. An impurity concentration of the sixth semiconductor layer is higher than an impurity concentration of the second semiconductor layer.

摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第一导电类型的第二半导体层，第二导电类型的第三半导体层，第二导电类型的第四半导体层， 第一导电类型的第五半导体层，第一导电类型的控制电极，第一主电极，第二主电极和第六半导体层。 第二半导体层和第三半导体层在与第一半导体层的主表面大致平行的方向上交替地设置在第一半导体层上。 第四半导体层设置在第二半导体层和第三半导体层上。 第五半导体层选择性地设置在第四半导体层的表面上。 控制电极通过绝缘膜设置在沟槽中。 沟槽从第五半导体层的表面穿过第四半导体层并且与第二半导体层接触。 第一主电极连接到第一半导体层。 第二主电极连接到第四半导体层和第五半导体层。 第六半导体层设置在第四半导体层和第二半导体层之间。 第六半导体层的杂质浓度高于第二半导体层的杂质浓度。

公开(公告)号：US08610210B2

公开(公告)日：2013-12-17

申请号：US12840201

申请日：2010-07-20

申请人： Hiroshi Ohta ,  Yasuto Sumi ,  Kiyoshi Kimura ,  Wataru Sekine ,  Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

发明人： Hiroshi Ohta ,  Yasuto Sumi ,  Kiyoshi Kimura ,  Wataru Sekine ,  Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

IPC分类号： H01L29/66

CPC分类号： H01L29/66712 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/7811

摘要： According to one embodiment, a power semiconductor device includes a first semiconductor layer, and first, second and third semiconductor regions. The first semiconductor layer has a first conductivity type. The first semiconductor regions have a second conductivity type, and are formed with periodicity in a lateral direction in a second semiconductor layer of the first conductivity type. The second semiconductor layer is provided on a major surface of the first semiconductor layer in a device portion with a main current path formed in a vertical direction generally perpendicular to the major surface and in a terminal portion provided around the device portion. The second semiconductor region has the first conductivity type and is a portion of the second semiconductor layer sandwiched between adjacent ones of the first semiconductor regions. The third semiconductor regions have the second conductivity type and are provided below the first semiconductor regions in the terminal portion.

摘要翻译： 根据一个实施例，功率半导体器件包括第一半导体层以及第一，第二和第三半导体区域。 第一半导体层具有第一导电类型。 第一半导体区域具有第二导电类型，并且在第一导电类型的第二半导体层中在横向方向上形成周期性。 第二半导体层设置在器件部分的第一半导体层的主表面上，其主电流通道形成在大体上垂直于主表面的垂直方向上，以及设置在器件部分周围的端子部分中。 第二半导体区域具有第一导电类型，并且是夹在相邻的第一半导体区域中的第二半导体层的一部分。 第三半导体区域具有第二导电类型并且设置在端子部分中的第一半导体区域的下方。