公开(公告)号：US20070170459A1

公开(公告)日：2007-07-26

申请号：US11698093

申请日：2007-01-26

申请人： Takashi Kyono ,  Hideki Hirayama

发明人： Takashi Kyono ,  Hideki Hirayama

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/14

摘要： A nitride semiconductor light generating device comprises an n-type gallium nitride based semiconductor layer, a quantum well active layer including an InX1AlY1Ga1-X1-Y1N (1>X1>0, 1>Y1>0) well layer and an InX2AlY2Ga1-X2-Y2N (1>X2>0, 1>Y2>0) barrier layer, an InX3AlY3Ga1-X3-Y3N (1>X3>0, 1>Y3>0) layer provided between the quantum well active layer and the n-type gallium nitride based semiconductor layer, and a p-type AlGaN layer having a bandgap energy greater than that of the InX2AlY2Ga1-X2-Y2N barrier layer. The indium composition X3 is greater than an indium composition X1. The indium composition X3 is greater than an indium composition X2. The aluminum composition Y2 is smaller than an aluminum composition Y3. The aluminum composition Y1 is smaller than an aluminum composition Y3. The oxygen concentration of the quantum well active layer is lower than that of the InX3AlY3Ga1-X3-Y3N layer. The quantum well active layer is provided between the p-type AlGaN layer and the InX3AlY3Ga1-X3-Y3N layer.

摘要翻译： 一种氮化物半导体光产生装置包括n型氮化镓基半导体层，包括In 1 N 1 Al 1 Y 1 Ga 1-X 1的量子阱活性层， Y1（X1> 0,1> Y1> 0）阱层和In2 X2＆lt; Y2＆gt; Y2＆lt; 1-X2-Y2 N（1> X2> 0,1> Y2> 0）势垒层，In 3-x 3 Al 3 Y 3 Ga 1-X 3 -Y 3 < 设置在量子阱活性层和n型氮化镓基半导体层之间的N（1> X3> 0,1> Y3> 0）层和具有大于等于n型氮化镓基半导体层的能隙能级的p型AlGaN层。 的Al 2 N 2 Al 2 N 2 Ga 2 N 2 N 2 N 2 N阻挡层。 铟组合物X3大于铟组合物X1。 铟组合物X3大于铟组合物X2。 铝组合物Y2小于铝组合物Y3。 铝组合物Y1小于铝组合物Y3。 量子阱活性层的氧浓度低于In 3 N 3 Al 3 Y 3 Ga 1-X3-Y 3 N层的氧浓度。 量子阱有源层设置在p型AlGaN层和In 3×3×Al 3 Y 3 Ga 1-X3-Y 3 N层之间。

公开(公告)号：US08823027B2

公开(公告)日：2014-09-02

申请号：US12836199

申请日：2010-07-14

申请人： Takashi Kyono

发明人： Takashi Kyono

IPC分类号： H01L33/32 ,  H01L33/50 ,  H01L33/08

CPC分类号： H01L33/08 ,  H01L33/32

摘要： A light emitting device having a relatively simple configuration is provided that emits stable light having a plurality of wavelengths. The light emitting device 1 comprises, in sequence, a composite substrate 3 and a gallium nitride-based semiconductor layer 5 including a light emitting layer 9. The composite substrate 3 includes a base 19 and a gallium nitride layer, the gallium nitride-based semiconductor layer 5 being disposed on a principal surface of the gallium nitride layer, the angle θ defined by the c-axis of the gallium nitride layer and a normal line N1 to the principal surface S1 of the gallium nitride layer ranging from 50 to 130 degrees, the light emitting layer 9 emitting light with an absolute value of the degree of polarization of 0.2 or more, the base 19 containing a fluorescent material that emits a fluorescent light component induced by irradiation of a light component emitted from the light emitting layer 9. Accordingly, the light emitting device 1 can emit white light produced by superposition of blue light directly emitted from the light emitting layer 9 and yellow light induced by blue light incident on the base 19 from the light emitting layer 9.

摘要翻译： 提供具有相对简单配置的发光器件，其发射具有多个波长的稳定光。 发光器件1依次包括复合衬底3和包括发光层9的氮化镓基半导体层5.复合衬底3包括基底19和氮化镓层，氮化镓基半导体 层5设置在氮化镓层的主表面上，角度和角度; 由氮化镓层的c轴和氮化镓层的主面S1的法线N1限定在50〜130度的范围内的发光层9，发光层9的偏振度绝对值为绝对值 基底19含有发出由发光层9发出的光分量的照射而产生的荧光成分的荧光材料。因此，发光元件1能够直接发出由蓝光叠加而产生的白光 从发光层9发射的黄光和从发光层9入射到基底19上的蓝光引起的黄光。

公开(公告)号：US20060192218A1

公开(公告)日：2006-08-31

申请号：US11195871

申请日：2005-08-03

申请人： Takashi Kyono ,  Hideki Hirayama

发明人： Takashi Kyono ,  Hideki Hirayama

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： In a nitride semiconductor light emitting device, a first conductivity type nitride semiconductor layer is provided on a support base and a second conductivity type nitride semiconductor layer is provided on the support base. An active region is provided between the first conductivity type nitride semiconductor layer and the second conductivity type nitride semiconductor layer. The active region includes an InX1AlY1Ga1-X1-Y1N well layer (1>X1>0 and 1>Y1>0) and an InX2AlY2Ga1-X2-Y2N barrier layer (1>X2>0 and 1>Y2>0). An InX3AlY3Ga1-X3-Y3N buffer layer (1>X3>0 and 1>Y3>0) is provided between the active region and the first conductivity type nitride semiconductor layer. A proportion X1 of indium in the InX1AlY1Ga1-X1-Y1N well layer is smaller than a proportion X3 of indium in the InX3AlY3Ga1-X3-Y3N buffer layer, and a proportion X2 of indium in the InX2AlY2Ga1-X2-Y2N barrier layer is smaller than the proportion X3 of indium in the InX3AlY3Ga1-X3-Y3N buffer layer.

摘要翻译： 在氮化物半导体发光器件中，在支撑基底上设置第一导电型氮化物半导体层，在支撑基底上设置第二导电型氮化物半导体层。 在第一导电型氮化物半导体层和第二导电型氮化物半导体层之间设置有源区。 有源区包括In 1 N 1 Al 1 N 1 Ga 1-X1-Y1 N阱层（1> X1> 0和1> Y1> 0）和一个二氧化氮（N 2）N 2阻挡层（1> X2> 0和1> Y2> 0 ）。 提供了一个In 3-x 3 Al 3 Y 3 Ga 1-X3-Y 3 N缓冲层（1> X3> 0和1> Y3> 0） 在有源区和第一导电型氮化物半导体层之间。 In>> Al> Ga Ga Ga Ga> X1 Y1 well well well of of in in in in in in in in in in in in in in in in in in in in In x 3 Al 3 Y 3 Ga 1-X 3 -Y 3 N缓冲层，以及In X2中的铟的比例X2， / SUB> Y2＆lt; 1＆lt;＆lt;＆lt;＆lt;＆lt;＆lt;＆lt; SUB＆ > Y3 1-X3-Y3 N缓冲层。

公开(公告)号：US20100047933A1

公开(公告)日：2010-02-25

申请号：US12608413

申请日：2009-10-29

申请人： Takao NAKAMURA ,  Toshio Ueda ,  Takashi Kyono

发明人： Takao NAKAMURA ,  Toshio Ueda ,  Takashi Kyono

IPC分类号： H01L21/66

CPC分类号： H01L22/10 ,  H01L22/20

摘要： A substrate inspection method allowing inspection of all a plurality of substrates each provided at its surface with a plurality of layers by determining quality of the plurality of layers as well as methods of manufacturing the substrate and an element using the substrate inspection method are provided. The substrate inspection method includes a step of preparing the substrate provided at its main surface with the plurality of layers, a film forming step, a local etching step, and an inspection step or a composition analysis step. In the step, a concavity is formed in a region provided with an epitaxial layer of the main surface of the substrate by removing at least partially the epitaxial layer. In the inspection step, the inspection is performed on the layer exposed in the concavity.

摘要翻译： 提供了一种基板检查方法，其允许通过确定多个层的质量以及制造基板的方法和使用基板检查方法的元件来检查在其表面处设置多个层的多个基板。 基板检查方法包括准备在其主表面上设置有多个层的基板，成膜步骤，局部蚀刻步骤以及检查步骤或组成分析步骤的步骤。 在该步骤中，通过至少部分去除外延层，在设置有衬底的主表面的外延层的区域中形成凹陷。 在检查步骤中，在暴露于凹部的层上进行检查。

公开(公告)号：US07554122B2

公开(公告)日：2009-06-30

申请号：US11195871

申请日：2005-08-03

申请人： Takashi Kyono ,  Hideki Hirayama

发明人： Takashi Kyono ,  Hideki Hirayama

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： In a nitride semiconductor light emitting device, a first conductivity type nitride semiconductor layer is provided on a support base and a second conductivity type nitride semiconductor layer is provided on the support base. An active region is provided between the first conductivity type nitride semiconductor layer and the second conductivity type nitride semiconductor layer. The active region includes an InX1AlY1Ga1-X1-Y1N well layer (1>X1>0 and 1>Y1>0) and an InX2AlY2Ga1-X2-Y2N barrier layer (1>X2>0 and 1>Y2>0). An InX3AlY3Ga1-X3-Y3N buffer layer (1>X3>0 and 1>Y3>0) is provided between the active region and the first conductivity type nitride semiconductor layer. A proportion X1 of indium in the InX1AlY1Ga1-X1-Y1N well layer is smaller than a proportion X3 of indium in the InX3AlY3Ga1-X3-Y3N buffer layer, and a proportion X2 of indium in the InX2AlY2Ga1-X2-Y2N barrier layer is smaller than the proportion X3 of indium in the InX3AlY3Ga1-X3-Y3N buffer layer.

摘要翻译： 在氮化物半导体发光器件中，在支撑基底上设置第一导电型氮化物半导体层，在支撑基底上设置第二导电型氮化物半导体层。 在第一导电型氮化物半导体层和第二导电型氮化物半导体层之间设置有源区。 有源区包括InX1AlY1Ga1-X1-Y1N阱层（1> X1> 0和1> Y1> 0）和InX2AlY2Ga1-X2-Y2N势垒层（1> X2> 0和1> Y2> 0）。 在有源区和第一导电型氮化物半导体层之间设置InX3AlY3Ga1-X3-Y3N缓冲层（1> X3> 0和1> Y3> 0）。 InX1AlY1Ga1-X1-Y1N阱层中的铟的比例X1小于InX3AlY3Ga1-X3-Y3N缓冲层中铟的比例X3，InX2AlY2Ga1-X2-Y2N阻挡层中的铟的比例X2小于 InX3AlY3Ga1-X3-Y3N缓冲层中铟的比例X3。

公开(公告)号：US20070278485A1

公开(公告)日：2007-12-06

申请号：US11806561

申请日：2007-06-01

申请人： Takao Nakamura ,  Toshio Ueda ,  Takashi Kyono

发明人： Takao Nakamura ,  Toshio Ueda ,  Takashi Kyono

IPC分类号： H01L23/58

CPC分类号： H01L22/10 ,  H01L22/20

摘要： A substrate inspection method allowing inspection of all a plurality of substrates each provided at its surface with a plurality of layers by determining quality of the plurality of layers as well as methods of manufacturing the substrate and an element using the substrate inspection method are provided. The substrate inspection method includes a step of preparing the substrate provided at its main surface with the plurality of layers, a film forming step, a local etching step, and an inspection step or a composition analysis step. In the step, a concavity is formed in a region provided with an epitaxial layer of the main surface of the substrate by removing at least partially the epitaxial layer. In the inspection step, the inspection is performed on the layer exposed in the concavity.

摘要翻译： 提供了一种基板检查方法，其允许通过确定多个层的质量以及制造基板的方法和使用基板检查方法的元件来检查在其表面处设置多个层的多个基板。 基板检查方法包括准备在其主表面上设置有多个层的基板，成膜步骤，局部蚀刻步骤以及检查步骤或组成分析步骤的步骤。 在该步骤中，通过至少部分去除外延层，在设置有衬底的主表面的外延层的区域中形成凹陷。 在检查步骤中，在暴露于凹部的层上进行检查。

公开(公告)号：US08227898B2

公开(公告)日：2012-07-24

申请号：US12836222

申请日：2010-07-14

申请人： Shinji Tokuyama ,  Masahiro Adachi ,  Takashi Kyono ,  Yoshihiro Saito

发明人： Shinji Tokuyama ,  Masahiro Adachi ,  Takashi Kyono ,  Yoshihiro Saito

IPC分类号： H01L29/20 ,  H01L29/04

CPC分类号： H01L33/40 ,  H01L33/16 ,  H01L33/32

摘要： A semiconductor device has a satisfactory ohmic contact on a p-type principal surface tilting from a c-plane. The principal surface 13a of a p-type semiconductor region 13 extends along a plane tilting from a c-axis (axis ) of hexagonal group-III nitride. A metal layer 15 is deposited on the principal surface 13a of the p-type semiconductor region 13. The metal layer 15 and the p-type semiconductor region 13 are separated by an interface 17 such that the metal layer functions as a non-alloy electrode. Since the hexagonal group-III nitride contains gallium as a group-III element, the principal surface 13a comprising the hexagonal group-III nitride is more susceptible to oxidation compared to the c-plane of the hexagonal group-III nitride. The interface 17 avoids an increase in amount of oxide after the formation of the metal layer 15 for the electrode.

摘要翻译： 半导体器件在从c面倾斜的p型主表面上具有令人满意的欧姆接触。 p型半导体区域13的主表面13a沿着从六方晶III族氮化物的c轴（轴<0001>）倾斜的平面延伸。 金属层15沉积在p型半导体区域13的主表面13a上。金属层15和p型半导体区域13被界面17分离，使得金属层用作非合金电极 。 由于六方晶III族氮化物含有镓作为III族元素，所以与六方晶III族氮化物的c面相比，包含六方晶III族氮化物的主表面13a更易于氧化。 界面17避免了形成用于电极的金属层15之后的氧化物的量的增加。

公开(公告)号：US07576351B2

公开(公告)日：2009-08-18

申请号：US11698093

申请日：2007-01-26

申请人： Takashi Kyono ,  Hideki Hirayama

发明人： Takashi Kyono ,  Hideki Hirayama

IPC分类号： H01L29/12

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/14

摘要： A nitride semiconductor light generating device comprises an n-type gallium nitride based semiconductor layer, a quantum well active layer including an InX1AlY1Ga1-X1-Y1N (1>X1>0, 1>Y1>0) well layer and an InX2AlY2Ga1-X2-Y2N (1>X2>0, 1>Y2>0) barrier layer, an InX3AlY3Ga1-X3-Y3N (1>X3>0, 1>Y3>0) layer provided between the quantum well active layer and the n-type gallium nitride based semiconductor layer, and a p-type AlGaN layer having a bandgap energy greater than that of the InX2AlY2Ga1-X2-Y2N barrier layer. The indium composition X3 is greater than an indium composition X1. The indium composition X3 is greater than an indium composition X2. The aluminum composition Y2 is smaller than an aluminum composition Y3. The aluminum composition Y1 is smaller than an aluminum composition Y3. The oxygen concentration of the quantum well active layer is lower than that of the InX3AlY3Ga1-X3-Y3N layer. The quantum well active layer is provided between the p-type AlGaN layer and the InX3AlY3Ga1-X3-Y3N layer.

摘要翻译： 氮化物半导体光产生装置包括n型氮化镓基半导体层，包括InX1AlY1Ga1-X1-Y1N（1> X1> 0,1> Y1> 0）阱层的量子阱活性层和InX2AlY2Ga1-X2- Y2N（1> X2> 0,1> Y2> 0）阻挡层，设置在量子阱有源层和n型镓之间的InX3AlY3Ga1-X3-Y3N（1> X3> 0,1> Y3> 0）层 氮化物基半导体层和具有比InX2AlY2Ga1-X2-Y2N势垒层的能隙大的带隙能的p型AlGaN层。 铟组合物X3大于铟组合物X1。 铟组合物X3大于铟组合物X2。 铝组合物Y2小于铝组合物Y3。 铝组合物Y1小于铝组合物Y3。 量子阱活性层的氧浓度低于InX3AlY3Ga1-X3-Y3N层的氧浓度。 量子阱有源层设置在p型AlGaN层和InX3AlY3Ga1-X3-Y3N层之间。