BIT LENGTH CONVERTING CIRCUIT FOR FLOATING-POINT NUMBERS, AND VIBRATION CORRECTION CONTROL CIRCUIT USING THE BIT LENGTH CONVERTING CIRCUIT
    2.
    发明申请
    BIT LENGTH CONVERTING CIRCUIT FOR FLOATING-POINT NUMBERS, AND VIBRATION CORRECTION CONTROL CIRCUIT USING THE BIT LENGTH CONVERTING CIRCUIT 有权
    用于浮点数的位长转换电路和使用位长转换电路的振动校正控制电路

    公开(公告)号:US20120242848A1

    公开(公告)日:2012-09-27

    申请号:US13428905

    申请日:2012-03-23

    申请人: Hideki HIRAYAMA

    发明人: Hideki HIRAYAMA

    IPC分类号: H04N5/225 H03M7/00

    CPC分类号: H03M7/24 H04N5/23258

    摘要: The bit length reducing unit reduces the bit length of an operand expressed by a floating-point number and outputs the operand to a computing unit. The bit length increasing unit increases the bit length of the result value of operation represented by the floating-point number inputted from the computing unit and restores the original bit length. The bit length reducing unit discards a preset number of higher-order bits of the exponent part of the floating-point number and at the same time adds a positive or negative offset value to the exponent part with the higher-order bits discarded, according to an application to be executed by the computing unit. The bit length increasing unit restores the bits discarded by the bit length reducing unit 11 from the exponent part of the floating-point number and at the same time subtracts an offset value from the exponent part.

    摘要翻译: 位长减少单元减少由浮点数表示的操作数的位长度,并将操作数输出到计算单元。 比特长度增加单元增加由从计算单元输入的浮点数表示的操作结果值的比特长度,并恢复原始比特长度。 比特长度减少单元丢弃浮点数的指数部分的预设数量的高位,并且同时将舍弃高阶比特的正或负偏移值添加到指数部分,根据 由计算单元执行的应用程序。 比特长度增加单元从比特长度缩减单元11丢弃的比特从浮点数的指数部分中恢复,同时从指数部分中减去偏移值。

    Image stabilization control circuit and image-capturing device

    公开(公告)号:US07856179B2

    公开(公告)日:2010-12-21

    申请号:US12591259

    申请日:2009-11-13

    申请人: Hideki Hirayama

    发明人: Hideki Hirayama

    IPC分类号: G03B17/00 H04N5/228

    摘要: An image stabilization control circuit of an image-capturing device prevents overflow of data in an integration process performed in a digital signal process on a signal outputted by a gyro-sensor. A gyro-filter receives, as an input, fixed-point format angular velocity data (Dω) obtained by subjecting an output signal from the gyro-sensor to an analog-to-digital conversion. In the gyro-filter, an input format conversion circuit converts from fixed-point format to floating-point format. A camera shake vibration component is obtained from the floating-point format Dω, is integrated, and data (Dθ) corresponding to an oscillation angle is generated. After a centering process is performed, Dθ is converted from floating-point format to fixed-point format by an output format conversion circuit, and outputted from the gyro-filter. A drive signal for driving an image stabilization mechanism is generated on the basis of the data outputted by the gyro-filter.

    SAPPHIRE SUBSTRATE, NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT USING THE SAPPHIRE SUBSTRATE, AND METHOD FOR MANUFACTURING THE NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT
    5.
    发明申请
    SAPPHIRE SUBSTRATE, NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT USING THE SAPPHIRE SUBSTRATE, AND METHOD FOR MANUFACTURING THE NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT 有权
    SAPPHIRE底物,使用锑基底材的氮化物半导体发光元件及其制造氮化物半导体发光元件的方法

    公开(公告)号:US20100207136A1

    公开(公告)日:2010-08-19

    申请号:US12446081

    申请日:2007-10-19

    IPC分类号: H01L33/32 H01L29/02 H01L21/20

    摘要: The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained. Specifically, c-axis growth can be carried out from the plane of each step as an a-plane on the terrace by vapor phase growth, which is advantageous in the fabrication of a device, in order to grow an excellent GaN single crystal which has been epitaxially grown so that the m-plane is opposite to the surplane of the terrace, and, in the mean time, the steps become integrated (fused), whereby a device can be fabricated from a substrate of a GaN single crystal having no significant threading dislocation. Further, the use of the m-plane can advantageously eliminate the influence of piezo electric fields.

    摘要翻译: 本发明提供一种廉价的基板,其可以通过气相生长实现晶体的m面生长。 在蓝宝石衬底中,在生长GaN等的晶体时,准备从m面倾斜预定非常小的角度的偏角平面作为晶体模板的生长表面, 通过抛光工艺制备包括步骤和梯田的逐步底物。 根据上述结构,即使使用通常不形成m面(非极性面)GaN膜的廉价蓝宝石基板作为晶体生长用基板,也可以获得以下的效果。 具体地说,c轴生长可以通过气相生长在平台上作为a平面从每个步骤的平面进行,这在器件的制造中是有利的,以便生长优异的GaN单晶,其具有 被外延生长,使得m平面与平台的平面相对,并且同时,步骤被整合(熔化),由此可以从不具有显着性的GaN单晶的衬底制造器件 穿线错位 此外,使用m面可以有利地消除压电场的影响。

    Semiconductor light emitting device and illuminating device using it
    6.
    发明授权
    Semiconductor light emitting device and illuminating device using it 有权
    半导体发光装置及其使用的照明装置

    公开(公告)号:US07723739B2

    公开(公告)日:2010-05-25

    申请号:US11991418

    申请日:2006-09-04

    IPC分类号: H01L33/00

    摘要: A semiconductor light emitting device includes an n-type nitride semiconductor layer 3 formed on one surface side of a single-crystal substrate 1 for epitaxial growth through a first buffer layer 2, an emission layer 5 formed on a surface side of the n-type nitride semiconductor layer 3, and a p-type nitride semiconductor layer 6 formed on a surface side of the emission layer 5. The emission layer 5 has an AlGaInN quantum well structure, and a second buffer layer 4 having the same composition as a barrier layer 5a of the emission layer 5 is provided between the n-type nitride semiconductor layer 3 and the emission layer 5. In the semiconductor light emitting device, it is possible to increase emission intensity of the ultraviolet radiation as compared with a conventional configuration while using AlGaInN as a material of the emission layer.

    摘要翻译: 半导体发光器件包括在单晶衬底1的一个表面侧上形成的用于通过第一缓冲层2外延生长的n型氮化物半导体层3,形成在n型表面侧的发射层5 氮化物半导体层3和形成在发光层5的表面侧的p型氮化物半导体层6.发光层5具有AlGaInN量子阱结构和具有与阻挡层相同的组成的第二缓冲层4 发光层5的5a设置在n型氮化物半导体层3和发光层5之间。在半导体发光器件中,与常规配置相比,可以增加紫外线辐射的发射强度,同时使用AlGaInN 作为发射层的材料。

    IMAGE STABILIZATION CONTROL CIRCUIT FOR IMAGING APPARATUS
    7.
    发明申请
    IMAGE STABILIZATION CONTROL CIRCUIT FOR IMAGING APPARATUS 有权
    用于成像装置的图像稳定控制电路

    公开(公告)号:US20090153679A1

    公开(公告)日:2009-06-18

    申请号:US12335179

    申请日:2008-12-15

    IPC分类号: H04N5/228

    摘要: An internal CPU, a vibration control equalizer for processing an output signal of a vibration detector for detecting vibration of an imaging apparatus and calculating a vibration signal for determining a driving amount for an optical component on the basis of vibration of the imaging apparatus, a position control equalizer for calculating a position signal for determining a driving amount for the optical component on the basis of position of the optical component, and a control switching section for switching between the internal CPU and an external control circuit for the imaging apparatus for control of the vibration control equalizer and the position control equalizer.

    摘要翻译: 内部CPU,振动控制均衡器,用于处理用于检测成像装置的振动的振动检测器的输出信号,并且基于成像装置的振动计算用于确定光学部件的驱动量的振动信号;位置 控制均衡器,用于基于所述光学部件的位置计算用于确定所述光学部件的驱动量的位置信号;以及控制切换部,用于在所述内部CPU与所述摄像装置的外部控制电路之间进行切换, 振动控制均衡器和位置控制均衡器。

    SAMPLE ANALYZER, BLOOD ANALYZER AND DISPLAYING METHOD
    8.
    发明申请
    SAMPLE ANALYZER, BLOOD ANALYZER AND DISPLAYING METHOD 有权
    样品分析仪,血液分析仪和显示方法

    公开(公告)号:US20090006003A1

    公开(公告)日:2009-01-01

    申请号:US12154773

    申请日:2008-05-27

    IPC分类号: G01N33/49

    摘要: The present invention is to present a sample analyzer which is capable of displaying a particle distribution map of a measured sample and a reference particle distribution map so as to be visually compared without reducing a display area for displaying information other than the particle distribution map. The blood analyzer 1 comprises: a display 302; a measurement unit 2 for measuring a blood sample; and a controller 301 being configured to 1) generate a particle distribution map representing a distribution of the particles contained in the blood sample, based on measurement data obtained by the measurement unit 2; and 2) control the display 302 so as to display the particle distribution map of the blood sample at a predetermined display position and to display a reference particle distribution map at the predetermined display position so as to be visually compared with the particle distribution map of the blood sample.

    摘要翻译: 本发明是提供一种样本分析器,其能够显示测量样本的粒子分布图和参考粒子分布图,以便在不减少用于显示除了粒子分布图之外的信息的显示区域的情况下进行目视比较。 血液分析仪1包括:显示器302; 用于测量血液样本的测量单元2; 控制器301被配置为根据由测量单元2获得的测量数据,生成表示血样中包含的粒子的分布的粒子分布图; 以及2)控制显示器302,以便在预定的显示位置显示血液样本的粒子分布图,并在预定的显示位置显示参考粒子分布图,以便与视觉上与 血液样本。

    Method and reagent for classifying leukocytes in animal blood
    9.
    发明授权
    Method and reagent for classifying leukocytes in animal blood 有权
    用于分类动物血液中白细胞的方法和试剂

    公开(公告)号:US07465584B2

    公开(公告)日:2008-12-16

    申请号:US11333200

    申请日:2006-01-18

    IPC分类号: G01N31/00 G01N33/48

    摘要: A method for classifying leukocytes in animal blood is described. In the method, a measurement sample is prepared by mixing a canine or feline blood sample with a lysing reagent. Erythrocytes are lysed and leukocytes are shrunk in the measurement sample. The data correlated with the size of leukocytes in the measurement sample are measured. The leukocytes, on the basis of the measured data, are classified into a first group containing lymphocytes, a second group containing neutrophils and monocytes and a third group containing eosinophils.

    摘要翻译: 描述了用于分类动物血液中白细胞的方法。 在该方法中,通过将犬或猫血液样品与裂解试剂混合来制备测量样品。 裂解红细胞,白细胞在测量样品中收缩。 测量与测量样品中白细胞大小相关的数据。 基于测量数据,将白细胞分类为含有淋巴细胞的第一组,含嗜中性粒细胞和单核细胞的第二组,以及含嗜酸性粒细胞的第三组。

    Ultraviolet light-emitting device in which p-type semiconductor is used
    10.
    发明申请
    Ultraviolet light-emitting device in which p-type semiconductor is used 有权
    使用p型半导体的紫外线发光装置

    公开(公告)号:US20080042162A1

    公开(公告)日:2008-02-21

    申请号:US11907280

    申请日:2007-10-10

    IPC分类号: H01L33/00

    摘要: An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.

    摘要翻译: 本发明的目的是提供一种紫外线发光装置,其中使用在紫外线区域具有高导电性和发光峰值并有效发光的p型半导体。 p型半导体是通过在预定类型的晶体原料之前同时或者开始供应预定类型的晶体原料之后提供p型杂质原料而制备的,此外,除了开始供应比预定类型的晶体原料之外的其它类型的晶体原料 在一个循环中的材料,其中在通过以脉冲方式交替提供多种类型的晶体原料进行晶体生长的情况下,一次性地供给多种类型的晶体原料的所有类型的晶体原料。