Substrate processing apparatus and manufacturing method of semiconductor device
    91.
    发明申请
    Substrate processing apparatus and manufacturing method of semiconductor device 审中-公开
    基板加工装置及半导体装置的制造方法

    公开(公告)号:US20090325389A1

    公开(公告)日:2009-12-31

    申请号:US12457584

    申请日:2009-06-16

    IPC分类号: H01L21/18 B05C11/00

    摘要: To grasp an accumulation state of residual matters inside of a vaporizer without decomposing the vaporizer, and grasp the timing of performing maintenance to the inside of the vaporizer in advance. A substrate processing apparatus of the present invention includes: a processing chamber in which substrates are contained; a vaporizer having a vaporizing space, for generating vaporized gas by vaporizing liquid source supplied into the vaporizing space; a liquid source supply system having a liquid source supply line for supplying the liquid source into the vaporizing space; a vaporized gas supply system having a vaporized gas supply line for supplying the vaporized gas into the processing chamber; an exhaust system for exhausting an atmosphere in the processing chamber; a pressure meter for measuring a pressure in the vaporizing space; a carrier gas supply system having a carrier gas supply line for supplying carrier gas into the vaporizing space; and a controller for judging a state of the vaporizer based on a measured value of the pressure meter when the carrier gas is supplied into the vaporizing space.

    摘要翻译: 在不分解蒸发器的情况下掌握蒸发器内的残留物的积聚状态,并且预先对蒸发器内部进行维护的时机。 本发明的基板处理装置包括:处理室,其中容纳基板; 蒸发器,其具有蒸发空间,用于通过蒸发供应到蒸发空间中的液体源产生汽化气体; 液体源供应系统,具有用于将液体源供应到蒸发空间中的液体源供应管线; 气化气体供给系统,具有用于将蒸发气体供给到处理室中的汽化气体供给管线; 用于排出处理室中的气氛的排气系统; 用于测量蒸发空间中的压力的​​压力计; 载气供应系统,具有用于将载气供应到蒸发空间中的载气供应管线; 以及控制器,用于当将载气供应到汽化空间中时,基于压力计的测量值来判断蒸发器的状态。

    SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
    92.
    发明申请
    SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
    基板加工方法和基板加工装置

    公开(公告)号:US20090205568A1

    公开(公告)日:2009-08-20

    申请号:US12429031

    申请日:2009-04-23

    IPC分类号: B05C11/00

    摘要: A substrate processing method by which a desired thin film is formed on a substrate by alternately supplying and discharging a plurality of processing gases to and from a process chamber having a space for processing the substrate. In the substrate processing method, a quantity of a chemical species, which exists in the thin film and the film stress of the thin film depends on, is controlled by controlling a supply time of one processing gas among the processing gases, and thus the film stress of the thin film is controlled.

    摘要翻译: 一种基板处理方法,其中通过向具有用于处理基板的处理空间的处理室交换和排出多个处理气体而在基板上形成期望的薄膜。 在基板处理方法中,通过控制处理气体中的一种处理气体的供给时间来控制存在于薄膜中的化学物质的量和薄膜的膜应力依赖于该膜,因此膜 控制薄膜的应力。

    Substrate processing apparatus
    94.
    发明申请
    Substrate processing apparatus 审中-公开
    基板加工装置

    公开(公告)号:US20080166886A1

    公开(公告)日:2008-07-10

    申请号:US11902035

    申请日:2007-09-18

    IPC分类号: H01L21/31 C23C16/00

    摘要: There is provided a substrate processing apparatus, comprising: a processing chamber that houses a plurality of substrates in a state of being stacked; a heating member that heats the substrate and an atmosphere in the processing chamber; a first gas supply member that supplies a source gas that thermally-decomposes; a second gas supply member that supplies oxidative gas; an exhaust member that exhausts the atmosphere in the processing chamber; and a controller that controls at least the first gas supply member, the second gas supply member, and the exhaust member. The first gas supply member further includes at least one inlet opening that introduces the source gas into the processing chamber; the first inlet opening opens so as to avoid the side of the substrate; the second gas supply member further includes at least one second inlet opening that introduces the oxidative gas into the processing chamber; the second inlet opening opens to the side of the substrate; and the controller controls the first and second gas supply members and the exhaust member, so that the source gas and the oxidative gas are alternately supplied and exhausted to the processing chamber, to form a desired film on the substrate.

    摘要翻译: 提供了一种基板处理装置,包括:处理室,其以堆叠的状态容纳多个基板; 加热构件,其加热所述基板和所述处理室中的气氛; 提供热分解的源气体的第一气体供给构件; 供给氧化气体的第二气体供给部件; 排气构件,其排出处理室中的气氛; 以及至少控制第一气体供给构件,第二气体供给构件和排气构件的控制器。 第一供气构件还包括将源气体引入处理室的至少一个入口; 第一入口开口打开以避免衬底的侧面; 第二气体供给构件还包括将氧化气体引入处理室的至少一个第二入口; 第二入口开口通向基板的侧面; 并且控制器控制第一和第二气体供给构件和排气构件,使得源气体和氧化气体被交替地供给并排出到处理室,以在基板上形成期望的膜。

    Method for manufacturing semiconductor device background
    95.
    发明申请
    Method for manufacturing semiconductor device background 有权
    制造半导体器件背景的方法

    公开(公告)号:US20080132084A1

    公开(公告)日:2008-06-05

    申请号:US11979707

    申请日:2007-11-07

    IPC分类号: H01L21/316 B05C11/00

    摘要: To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.

    摘要翻译: 在通过将原料和醇交替地流动到处理室来形成薄膜的方法中,为了提高台阶覆盖率和装载效果,不会引起生产量的恶化和成本的增加。 该方法包括:将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环,首先清洗,供给原料和第二次清洗,并通过重复该循环规定次数,在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。

    Method of catalytic decomposition of water
    96.
    发明授权
    Method of catalytic decomposition of water 失效
    水的催化分解方法

    公开(公告)号:US07357912B2

    公开(公告)日:2008-04-15

    申请号:US11206967

    申请日:2005-08-19

    IPC分类号: C01B3/04 B01J21/06

    摘要: A method of catalytically decomposing water, which comprises contacting water with a composite catalyst comprising a solid acid catalyst and a solid base catalyst at an elevated temperature, wherein the composite catalyst contains the solid acid catalyst in an amount of 36 to 65% by weight and the balance being the solid base catalyst, and wherein the temperature is higher than a temperature at which pH values of the (H2O/O2 redox) potential and (H2O/H2 redox) potential are equal to each other, the redox potentials being given by a water potential—pH value diagram.

    摘要翻译: 一种催化分解水的方法,其包括使水与包含固体酸催化剂和固体碱催化剂的复合催化剂在升高的温度下接触,其中复合催化剂含有36-65重量%的固体酸催化剂,和 余量为固体碱催化剂,其中温度高于(H 2 O 2 O / O 2 O 2氧化还原)电位的pH值和(H 氧化还原电位彼此相等,氧化还原电位由水电位 - pH值图表给出。

    Lead acid battery
    97.
    发明申请
    Lead acid battery 审中-公开
    铅酸蓄电池

    公开(公告)号:US20070141465A1

    公开(公告)日:2007-06-21

    申请号:US11641766

    申请日:2006-12-20

    IPC分类号: H01M4/38

    摘要: It is an object of the present invention to provide a lead acid battery which generates a higher power than the conventional lead acid battery does. To this end, the lead acid battery of the present invention is characterized in that electrodes are formed, each of the electrodes having a structure in which a metallic powder is disorderly distributed, the metallic powder being composed of a metallic lead powder or a lead alloy powder containing lead as a main element of composition. In the lead acid battery, a charge collection network of a metallic powder containing lead is formed. As a result, the lead acid battery generates a higher power than the conventional lead acid battery does.

    摘要翻译: 本发明的目的是提供一种比常规铅酸电池产生更高功率的铅酸电池。 为此,本发明的铅酸电池的特征在于,形成电极,每个电极具有金属粉末无序分布的结构,金属粉末由金属铅粉末或铅合金构成 含铅的粉末作为组成的主要元素。 在铅酸电池中,形成含有铅的金属粉末的电荷收集网。 结果,铅酸电池产生比常规铅酸电池更高的功率。

    Power steering device
    98.
    发明申请
    Power steering device 审中-公开
    动力转向装置

    公开(公告)号:US20070074926A1

    公开(公告)日:2007-04-05

    申请号:US11487356

    申请日:2006-07-17

    IPC分类号: B62D5/06

    摘要: A power assist mechanism is provided that assists operation of a steering mechanism when receiving a pressurized hydraulic fluid. A hydraulic pump feeds the power assist mechanism with the pressurized hydraulic fluid when driven. An electric motor drives the hydraulic pump. A battery unit is provided for energizing the electric motor. A control unit is provided for controlling the electric power from the battery unit to the electric motor. The battery unit comprises a plurality of lead-acid batteries that are connected in series. Each lead-acid battery comprises a spirally wound positive plate, a spirally wound negative plate, a spirally wound insulating plate that is spirally wound and sandwiched between the positive and negative plates, a battery case that puts therein the spirally wound positive, negative and insulating plates and an electrolyte that is provided in the battery case.

    摘要翻译: 提供动力辅助机构,其在接收加压液压流体时辅助转向机构的操作。 驱动时,液压泵将动力辅助机构与加压液压流体一起供给。 电动机驱动液压泵。 提供电池单元以对电动机通电。 提供控制单元,用于控制从电池单元到电动机的电力。 电池单元包括串联连接的多个铅酸电池。 每个铅酸电池包括螺旋缠绕的正极板,螺旋卷绕的负极板,螺旋卷绕并夹在正极板和负极板之间的螺旋卷绕的绝缘板,放置螺旋卷绕的正极,负极和绝缘的电池壳体 板和设置在电池壳体中的电解质。

    Novel abutted exchange bias design for sensor stabilization

    公开(公告)号:US20060198059A1

    公开(公告)日:2006-09-07

    申请号:US11074270

    申请日:2005-03-04

    IPC分类号: G11B5/127 G11B5/33

    CPC分类号: G11B5/3932

    摘要: A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.