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91.发明授权公开(公告)号：US08417018B2
公开(公告)日：2013-04-09
申请号：US12750023
申请日：2010-03-30
申请人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G03F7/70783
摘要： A photomask blank having a film on a substrate is inspected by (A) measuring a surface topography of a photomask blank having a film to be inspected for stress, (B) removing the film from the photomask blank to provide a treated substrate, (C) measuring a surface topography of the treated substrate, and (D) comparing the surface topography of the photomask blank with the surface topography of the treated substrate, thereby evaluating a stress in the film.
摘要翻译： 通过（A）测量具有要检查的应力膜的光掩模坯料的表面形貌来检查在基板上具有膜的光掩模坯料，（B）从光掩模坯料除去膜以提供经处理的基板（C ）测量经处理的基底的表面形貌，以及（D）将光掩模毛坯的表面形貌与经处理的基底的表面形貌进行比较，从而评估膜中的应力。
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92.发明申请BINARY PHOTOMASK BLANK AND BINARY PHOTOMASK MAKING METHOD 有权BINARY PHOTOMASK BLANK和BINARY PHOTOMASK制作方法公开(公告)号：US20120034551A1
公开(公告)日：2012-02-09
申请号：US13196952
申请日：2011-08-03
IPC分类号： G03F1/14
摘要： A binary photomask blank has on a transparent substrate a light-shielding film including substrate-side and surface-side compositionally graded layers, having a thickness of 35-60 nm, and composed of a silicon base material containing a transition metal and N and/or O. The substrate-side compositionally graded layer has a thickness of 10-58.5 nm, and a N+O content of 25-40 at % at its lower surface and 10-23 at % at its upper surface. The surface-side compositionally graded layer has a thickness of 1.5-8 nm, and a N+O content of 10-45 at % at its lower surface and 45-55 at % at its upper surface.
摘要翻译： 二元光掩模坯料在透明基板上具有包括厚度为35-60nm的基板侧和表面侧的组成梯度层的遮光膜，由含有过渡金属和N和/ 基底侧组成梯度层的厚度为10-58.5nm，N + O含量在其下表面为25-40at％，在其上表面为10-23at％。 表面侧组成梯度层的厚度为1.5-8nm，其下表面的N + O含量为10-45原子％，其上表面为45-55原子％。
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公开(公告)号：US08007964B2
公开(公告)日：2011-08-30
申请号：US12709116
申请日：2010-02-19
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
摘要翻译： 用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。 在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及 硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。 还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。
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94.发明授权公开(公告)号：US07904836B2
公开(公告)日：2011-03-08
申请号：US11785802
申请日：2007-04-20
申请人： Hiroki Yoshikawa , Masahiro Ogawa
发明人： Hiroki Yoshikawa , Masahiro Ogawa
IPC分类号： G06F3/048
CPC分类号： G06F3/0485 , G06F3/0482
摘要： An image reproduction method includes: a reduced-size image reading step of reading a plurality of reduced-size images from a recording medium and storing the reduced-size images in a memory; a display step of multi-displaying the plurality of reduced-size images on a monitor; a cursor movement detection step of detecting a moving speed of a cursor indicating a selected reduced-size image from the plurality of reduced-size images displayed on the monitor; and an image read-ahead step of reading images from the recording medium according to the moving speed of the cursor and storing the image in the memory.
摘要翻译： 一种图像再现方法包括：缩小尺寸图像读取步骤，从记录介质读取多个缩小尺寸图像并将缩小尺寸图像存储在存储器中; 显示步骤，在监视器上多次显示所述缩小尺寸的图像; 光标移动检测步骤，从显示在监视器上的多个缩小尺寸图像中检测指示所选择的缩小图像的光标的移动速度; 以及根据光标的移动速度从记录介质读取图像并将图像存储在存储器中的图像预读步骤。
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公开(公告)号：US07771893B2
公开(公告)日：2010-08-10
申请号：US11489477
申请日：2006-07-20
申请人： Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/46 , G03F1/54 , G03F1/58 , Y10T428/24917 , Y10T428/31616
摘要： A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm−1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.
摘要翻译： 在作为光掩模基板的石英等的透明基板的一个主面上形成曝光用遮光膜。 遮光膜不仅可以用作所谓的“遮光膜”，而且可以用作抗反射膜。 此外，遮光膜的总厚度为100nm以下，其中70％以上的铬化合物的厚度为0.025nm-1，每单位厚度的光密度（OD） 对于波长为450nm的光。 在光掩模坯料用于制造用于ArF曝光的掩模的情况下，遮光膜的厚度和组成选择为使得遮光膜的OD为193或193的屏蔽膜的OD为1.2至2.3 248 nm波长的光。
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公开(公告)号：US20100143831A1
公开(公告)日：2010-06-10
申请号：US12709116
申请日：2010-02-19
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
摘要翻译： 用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。 在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及 硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。 还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。
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公开(公告)号：US20080090159A1
公开(公告)日：2008-04-17
申请号：US11952283
申请日：2007-12-07
IPC分类号： G03F1/00
CPC分类号： C23C14/3492 , C23C14/0084 , C23C14/048 , C23C14/0676 , C23C14/0682 , C23C14/3464 , G03F1/32 , Y10T428/31616
摘要： A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side. The invention provides a photomask blank, typically a phase shift mask blank, which satisfies optical properties such as transmittance, reflectance and refractive index at an exposure wavelength of interest, and has an etched pattern with a minimal line edge roughness, and a photomask, typically a phase shift mask obtained therefrom.
摘要翻译： 一种光掩模坯料，其包括包含至少四层不同组成的多层膜，其中所述层之间的界面在组成上适度地分级; 相移掩模坯料，其包括至少两层的相移膜，所述相移膜包括基于硅化锆化合物的组合物的表面层和基于硅化钼化合物的组合物的基底相邻层，以及在层之间的另一层 和另一层不同的组成，所述另一层具有从所述一层到另一层的组成适度分级的组成; 相移掩模坯料，其包括相移膜，所述相移膜包括多个层，所述多个层包含不同组成比的金属和硅，所述多个层按照使得具有较高蚀刻速率的层位于基板侧上的顺序层叠，并且具有较低蚀刻 速率在表面。 本发明提供了一种光掩模坯料，通常是相移掩模坯料，其满足感兴趣的曝光波长下的透光率，反射率和折射率等光学特性，并且具有最小线边缘粗糙度的蚀刻图案，以及光掩模 从其获得的相移掩模。
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公开(公告)号：US20070259276A1
公开(公告)日：2007-11-08
申请号：US11662479
申请日：2005-08-10
申请人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/08 , C23F4/00 , G03F1/14 , H01L21/027
摘要： A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).
摘要翻译： 在光掩模基板的一个主表面上设置金属膜作为遮光层。 通过含有氧（（Cl + O）基干蚀刻）的基于氯的干蚀刻，不能基本上蚀刻金属膜，并且可以通过不含氧的氯基干法蚀刻（基于Cl的干蚀刻）和氟基 干蚀刻（F-干蚀刻）。 在遮光层上，作为抗反射层的金属化合物膜。 金属化合物膜不能通过不含氧（Cl基）的氯基干蚀刻基本上被蚀刻，并且可以通过含氧（（Cl + O）基）的氯基干蚀刻和氟基干法中的至少一种进行蚀刻 蚀刻（基于F）。
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99.发明申请公开(公告)号：US20070258695A1
公开(公告)日：2007-11-08
申请号：US11785802
申请日：2007-04-20
申请人： Hiroki Yoshikawa , Masahiro Ogawa
发明人： Hiroki Yoshikawa , Masahiro Ogawa
IPC分类号： H04N5/91
CPC分类号： G06F3/0485 , G06F3/0482
摘要： An image reproduction method includes: a reduced-size image reading step of reading a plurality of reduced-size images from a recording medium and storing the reduced-size images in a memory; a display step of multi-displaying the plurality of reduced-size images on a monitor; a cursor movement detection step of detecting a moving speed of a cursor indicating a selected reduced-size image from the plurality of reduced-size images displayed on the monitor; and an image read-ahead step of reading images from the recording medium according to the moving speed of the cursor and storing the image in the memory.
摘要翻译： 一种图像再现方法包括：缩小尺寸图像读取步骤，从记录介质读取多个缩小尺寸图像并将缩小尺寸图像存储在存储器中; 显示步骤，在监视器上多次显示所述缩小尺寸的图像; 光标移动检测步骤，从显示在监视器上的多个缩小尺寸图像中检测指示所选择的缩小图像的光标的移动速度; 以及根据光标的移动速度从记录介质读取图像并将图像存储在存储器中的图像预读步骤。
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公开(公告)号：US20070212618A1
公开(公告)日：2007-09-13
申请号：US11715346
申请日：2007-03-08
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
摘要： A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要翻译： 提供一种光掩模坯料，其包括设置在透明基板上的耐蚀刻干蚀刻和通过氯干蚀刻除去的蚀刻停止膜，设置在蚀刻停止膜上的遮光膜，并且包括至少一层由 过渡金属/硅材料和设置在遮光膜上的抗反射膜。 当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。
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