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228 条记录 (耗时 0.037 秒)

    Vacuum cleaner
    92.
    发明授权
    Vacuum cleaner 有权
    吸尘器

    公开(公告)号：US08584313B2

    公开(公告)日：2013-11-19

    申请号：US13002122

    申请日：2009-04-29

    申请人： Young-Ho Kim

    发明人： Young-Ho Kim

    IPC分类号： B24B9/10

    CPC分类号： A47L9/1691 ,  A47L9/108 ,  A47L9/1608 ,  A47L9/1683

    摘要： A vacuum cleaner is provided. The vacuum cleaner includes a cleaner body including a suction motor, a dust separation device communicated with the cleaner body, the dust separation device separating dusts, a dust container separably mounted on the cleaner body, the dust container including a dust storage part storing the dusts separated by the dust separation device, a compressing member compressing the dusts stored in the dust storage part, a magnetic member seat part disposed at the dust container, a magnetic member seated on the magnetic member seat part, a cover coupled to the magnetic member seat part to cover the magnetic member, and a magnetism detection unit disposed at the cleaner body to detect magnetism of the magnetic member.

    摘要翻译： 提供吸尘器。 真空吸尘器包括吸尘器主体，其包括抽吸马达，与吸尘器主体连通的灰尘分离装置，分离灰尘的灰尘分离装置，可分离地安装在吸尘器主体上的灰尘容器，该贮尘容器包括存放灰尘的灰尘储存部 由灰尘分离装置隔开的压缩构件，压缩存储在贮尘部中的灰尘的压缩构件，设置在贮尘容器上的磁性构件座部，安置在磁性构件座部上的磁性构件，与磁性构件座 覆盖磁性构件的部分，以及设置在吸尘器主体处以检测磁性构件的磁性的磁性检测单元。

    Methods of manufacturing semiconductor devices using photolithography
    93.
    发明授权
    Methods of manufacturing semiconductor devices using photolithography 有权
    使用光刻制造半导体器件的方法

    公开(公告)号：US08551689B2

    公开(公告)日：2013-10-08

    申请号：US13117667

    申请日：2011-05-27

    申请人： Mi-Ra Park ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    发明人： Mi-Ra Park ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    IPC分类号： G03F7/26

    CPC分类号： H01L21/0273 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/40

    摘要： A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.

    摘要翻译： 使用光刻工艺制造半导体器件的方法可以包括在下表面上形成抗反射层和第一光致抗蚀剂膜。 可以将第一光致抗蚀剂膜暴露于光，并且可以通过显影第一光致抗蚀剂膜来形成具有第一开口的第一光致抗蚀剂图案。 可以在第一光致抗蚀剂图案上进行等离子体处理，并且可以在可以暴露于光的第一光致抗蚀剂图案上形成第二光致抗蚀剂膜。 可以通过显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案以具有第二开口。 这里，第二开口可以比第一开口窄得多。

    Frequency mixer
    94.
    发明授权
    Frequency mixer 有权
    混频器

    公开(公告)号：US08358998B2

    公开(公告)日：2013-01-22

    申请号：US12837807

    申请日：2010-07-16

    申请人： Young-Ho Kim

    发明人： Young-Ho Kim

    IPC分类号： H04B1/26

    CPC分类号： H03D7/1441 ,  H03D7/1408 ,  H03D7/1433 ,  H03D7/1458 ,  H03D2200/0025 ,  H03D2200/0033 ,  H03D2200/0043 ,  H03D2200/0084 ,  H03D2200/0096

    摘要： A down-conversion frequency mixer includes: a radio frequency (RF) input unit disposed between a VDD line and a GND line and configured to receive an RF signal; an LO input unit configured to receive a carrier frequency (LO) from an internal frequency synthesizer; an intermediate frequency (IF) output unit disposed in parallel to the RF input unit between the VDD line and the GND line and configured to mix the RF signal with the LO signal and output an IF signal; a current generation unit configured to generate a stabilized current without being influenced with noise entered through the VDD line and the GND line; and a noise blocking unit disposed between the VDD line and the RF input unit, between the VDD line and the IF output unit, between the GND line and the RF input unit, and between the GND line and the LO input unit and configured to copy the current generated from the current generator and generate a stabilized current.

    摘要翻译： 下变频混频器包括：射频（RF）输入单元，设置在VDD线和GND线之间，并被配置为接收RF信号; LO输入单元，被配置为从内部频率合成器接收载波频率（LO）; 中频（IF）输出单元，其与VDD线和GND线之间的RF输入单元并联配置，并配置为将RF信号与LO信号混频并输出IF信号; 电流产生单元，被配置为产生稳定电流，而不受通过VDD线和GND线输入的噪声的影响; 以及噪声阻断单元，设置在VDD线和RF输入单元之间，VDD线和IF输出单元之间，GND线和RF输入单元之间，以及GND线和LO输入单元之间，并配置为复制 从电流发生器产生的电流产生稳定的电流。

    Method of forming fine pattern employing self-aligned double patterning
    96.
    发明授权
    Method of forming fine pattern employing self-aligned double patterning 失效
    使用自对准双重图案形成精细图案的方法

    公开(公告)号：US08071484B2

    公开(公告)日：2011-12-06

    申请号：US12132548

    申请日：2008-06-03

    申请人： Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Myung-Sun Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Myung-Sun Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： H01L21/311 ,  B44C1/22

    CPC分类号： H01L21/0337

    摘要： There are provided a method of forming a fine pattern employing self-aligned double patterning. The method includes providing a substrate. First mask patterns are formed on the substrate. A reactive layer is formed on the substrate having the first mask patterns. The reactive layer adjacent to the first mask patterns is reacted using a chemical attachment process, thereby forming sacrificial layers along outer walls of the first mask patterns. The reactive layer that is not reacted is removed to expose the sacrificial layers. Second mask patterns are formed between the sacrificial layers adjacent to sidewalls of the first mask patterns facing each other. The sacrificial layers are removed to expose the first and second mask patterns and the substrate exposed between the first and second mask patterns. The substrate is etched using the first and second mask patterns as an etching mask.

    摘要翻译： 提供了使用自对准双重图案形成精细图案的方法。 该方法包括提供基板。 在基板上形成第一掩模图案。 在具有第一掩模图案的基板上形成反应层。 使用化学附着工艺反应与第一掩模图案相邻的反应层，从而沿着第一掩模图案的外壁形成牺牲层。 去除未反应的反应层以暴露牺牲层。 在与彼此面对的第一掩模图案的侧壁相邻的牺牲层之间形成第二掩模图案。 去除牺牲层以暴露在第一和第二掩模图案之间暴露的第一和第二掩模图案和衬底。 使用第一和第二掩模图案作为蚀刻掩模蚀刻衬底。

    VACUUM CLEANER
    98.
    发明申请
    VACUUM CLEANER 有权
    吸尘器

    公开(公告)号：US20110209303A1

    公开(公告)日：2011-09-01

    申请号：US13002122

    申请日：2009-04-29

    申请人： Young-Ho Kim

    发明人： Young-Ho Kim

    IPC分类号： A47L9/10

    CPC分类号： A47L9/1691 ,  A47L9/108 ,  A47L9/1608 ,  A47L9/1683

    摘要： A vacuum cleaner is provided. The vacuum cleaner includes a cleaner body including a suction motor, a dust separation device communicated with the cleaner body, the dust separation device separating dusts, a dust container separably mounted on the cleaner body, the dust container including a dust storage part storing the dusts separated by the dust separation device, a compressing member compressing the dusts stored in the dust storage part, a magnetic member seat part disposed at the dust container, a magnetic member seated on the magnetic member seat part, a cover coupled to the magnetic member seat part to cover the magnetic member, and a magnetism detection unit disposed at the cleaner body to detect magnetism of the magnetic member.

    摘要翻译： 提供吸尘器。 真空吸尘器包括吸尘器主体，其包括抽吸马达，与吸尘器主体连通的灰尘分离装置，分离灰尘的灰尘分离装置，可分离地安装在吸尘器主体上的灰尘容器，该贮尘容器包括存放灰尘的灰尘储存部 由灰尘分离装置隔开的压缩构件，压缩存储在贮尘部中的灰尘的压缩构件，设置在贮尘容器上的磁性构件座部，安置在磁性构件座部上的磁性构件，与磁性构件座 覆盖磁性构件的部分，以及设置在吸尘器主体处以检测磁性构件的磁性的磁性检测单元。

    Methods of forming a pattern and methods of manufacturing a capacitor using the same
    100.
    发明授权
    Methods of forming a pattern and methods of manufacturing a capacitor using the same 失效
    形成图案的方法和使用其形成电容器的方法

    公开(公告)号：US07985347B2

    公开(公告)日：2011-07-26

    申请号：US12002052

    申请日：2007-12-14

    申请人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Myung-Sun Kim ,  Jae-Ho Kim ,  Chang-Ho Lee ,  Seok Han

    发明人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Myung-Sun Kim ,  Jae-Ho Kim ,  Chang-Ho Lee ,  Seok Han

    IPC分类号： C03C25/68 ,  C23C1/00 ,  H01L21/20

    CPC分类号： H01G13/00 ,  H01G4/33 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/91

    摘要： In a method of forming a pattern and a method of forming a capacitor, an oxide layer pattern having an opening is formed on a substrate. A conductive layer is formed on the oxide layer pattern and the bottom and sidewalls of the opening. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern including a siloxane polymer. The conductive layer on the oxide layer pattern is selectively removed using the buffer layer pattern as an etching mask. A conductive pattern having a cylindrical shape can be formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

    摘要翻译： 在形成图案的方法和形成电容器的方法中，在基板上形成具有开口的氧化物层图案。 在氧化物层图案和开口的底部和侧壁上形成导电层。 在具有导电层的开口中形成缓冲层图案，缓冲层图案包括硅氧烷聚合物。 使用缓冲层图案作为蚀刻掩模，选择性地去除氧化物层图案上的导电层。 可以在基板上形成具有圆柱形状的导电图案。 形成图案的方法可以简化电容器和半导体器件的制造工艺，并且可以提高它们的效率。