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    Method of forming fine pattern employing self-aligned double patterning
    1.
    发明授权
    Method of forming fine pattern employing self-aligned double patterning 失效
    使用自对准双重图案形成精细图案的方法

    公开(公告)号：US08071484B2

    公开(公告)日：2011-12-06

    申请号：US12132548

    申请日：2008-06-03

    申请人： Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Myung-Sun Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Myung-Sun Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： H01L21/311 ,  B44C1/22

    CPC分类号： H01L21/0337

    摘要： There are provided a method of forming a fine pattern employing self-aligned double patterning. The method includes providing a substrate. First mask patterns are formed on the substrate. A reactive layer is formed on the substrate having the first mask patterns. The reactive layer adjacent to the first mask patterns is reacted using a chemical attachment process, thereby forming sacrificial layers along outer walls of the first mask patterns. The reactive layer that is not reacted is removed to expose the sacrificial layers. Second mask patterns are formed between the sacrificial layers adjacent to sidewalls of the first mask patterns facing each other. The sacrificial layers are removed to expose the first and second mask patterns and the substrate exposed between the first and second mask patterns. The substrate is etched using the first and second mask patterns as an etching mask.

    摘要翻译： 提供了使用自对准双重图案形成精细图案的方法。 该方法包括提供基板。 在基板上形成第一掩模图案。 在具有第一掩模图案的基板上形成反应层。 使用化学附着工艺反应与第一掩模图案相邻的反应层，从而沿着第一掩模图案的外壁形成牺牲层。 去除未反应的反应层以暴露牺牲层。 在与彼此面对的第一掩模图案的侧壁相邻的牺牲层之间形成第二掩模图案。 去除牺牲层以暴露在第一和第二掩模图案之间暴露的第一和第二掩模图案和衬底。 使用第一和第二掩模图案作为蚀刻掩模蚀刻衬底。

    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same
    2.
    发明授权
    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same 失效
    硅氧烷聚合物组合物，使用其形成图案的方法，以及使用其制造半导体的方法

    公开(公告)号：US07776730B2

    公开(公告)日：2010-08-17

    申请号：US12216682

    申请日：2008-07-09

    申请人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： H01L21/20 ,  H01L21/3205 ,  H01L21/4763

    CPC分类号： C08G77/38 ,  H01L28/91

    摘要： A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R′ represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

    摘要翻译： 硅氧烷聚合物组合物包含基于硅氧烷聚合物组合物的总重量为约93重量％至约98重量％的量的有机溶剂和约2重量％至约2重量％的硅氧烷配合物 7重量％，基于硅氧烷聚合物组合物的总重量，硅氧烷配合物包括具有引入的羧酸的硅氧烷聚合物并由下式1表示，其中R1，R2 R3和R4各自独立地表示H， OH，CH3，C2H5，C3H7，C4H9或C5H11，R'表示CH2，C2H4，C3H6，C4H8，C5H10或C6H12，n表示正整数，硅氧烷配合物的硅氧烷聚合物的数均分子量为约4,000 至约5,000。

    Siloxane polymer composition
    3.
    发明授权
    Siloxane polymer composition 失效
    硅氧烷聚合物组合物

    公开(公告)号：US08450444B2

    公开(公告)日：2013-05-28

    申请号：US12856359

    申请日：2010-08-13

    申请人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： C08G77/385

    CPC分类号： C08G77/38 ,  H01L28/91

    摘要： A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R′ represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

    摘要翻译： 硅氧烷聚合物组合物包含基于硅氧烷聚合物组合物的总重量为约93重量％至约98重量％的量的有机溶剂和约2重量％至约2重量％的硅氧烷配合物 7重量％，基于硅氧烷聚合物组合物的总重量，硅氧烷配合物包括具有引入的羧酸的硅氧烷聚合物并由下式1表示，其中R1，R2 R3和R4各自独立地表示H， OH，CH3，C2H5，C3H7，C4H9或C5H11，R'表示CH2，C2H4，C3H6，C4H8，C5H10或C6H12，n表示正整数，硅氧烷配合物的硅氧烷聚合物的数均分子量为约4,000 至约5,000。

    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same
    4.
    发明申请
    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same 失效
    硅氧烷聚合物组合物，使用其形成图案的方法，以及使用其制造半导体的方法

    公开(公告)号：US20090017592A1

    公开(公告)日：2009-01-15

    申请号：US12216682

    申请日：2008-07-09

    申请人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： H01L21/02 ,  C08G77/14

    CPC分类号： C08G77/38 ,  H01L28/91

    摘要： A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R′ represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

    摘要翻译： 硅氧烷聚合物组合物包含基于硅氧烷聚合物组合物的总重量为约93重量％至约98重量％的量的有机溶剂和约2重量％至约2重量％的硅氧烷配合物 7重量％，基于硅氧烷聚合物组合物的总重量，硅氧烷配合物包括具有引入的羧酸的硅氧烷聚合物并由下式1表示，其中R1，R2 R3和R4各自独立地表示H， OH，CH3，C2H5，C3H7，C4H9或C5H11，R'表示CH2，C2H4，C3H6，C4H8，C5H10或C6H12，n表示正整数，硅氧烷配合物的硅氧烷聚合物的数均分子量为约4,000 至约5,000。

    Methods of Forming a Photoresist Pattern Using Plasma Treatment of Photoresist Patterns
    5.
    发明申请
    Methods of Forming a Photoresist Pattern Using Plasma Treatment of Photoresist Patterns 审中-公开
    使用等离子体处理光刻胶图案形成光刻胶图案的方法

    公开(公告)号：US20110300712A1

    公开(公告)日：2011-12-08

    申请号：US13103375

    申请日：2011-05-09

    申请人： Kyoung-Mi Kim ,  Jeong-Ju Park ,  Mi-Ra Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    发明人： Kyoung-Mi Kim ,  Jeong-Ju Park ,  Mi-Ra Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    IPC分类号： H01L21/308 ,  H01L21/312

    CPC分类号： H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11521

    摘要： Methods of forming a photoresist pattern include forming a first photoresist pattern on a substrate and treating the first photoresist pattern with plasma that modifies etching characteristics of the first photoresist pattern. This modification may include making the first photoresist pattern more susceptible to removal during subsequent processing. The plasma-treated first photoresist pattern is covered with a second photoresist layer, which is patterned into a second photoresist pattern that contacts sidewalls of the plasma-treated first photoresist pattern. The plasma-treated first photoresist pattern is selectively removed from the substrate to reveal the remaining second photoresist pattern. The second photoresist pattern is used as an etching mask during the selective etching of a portion of the substrate (e.g., target layer). The use of the second photoresist pattern as an etching mask may yield narrower linewidths in the etched portion of the substrate than are achievable using the first photoresist pattern alone.

    摘要翻译： 形成光致抗蚀剂图案的方法包括在基板上形成第一光致抗蚀剂图案，并用等离子体处理第一光致抗蚀剂图案，其改变第一光致抗蚀剂图案的蚀刻特性。 该修改可以包括使第一光致抗蚀剂图案在随后的处理期间更易于去除。 等离子体处理的第一光致抗蚀剂图案被第二光致抗蚀剂层覆盖，第二光致抗蚀剂层被图案化成与等离子体处理的第一光致抗蚀剂图案的侧壁接触的第二光致抗蚀剂 从衬底选择性地去除等离子体处理的第一光致抗蚀剂图案以显示剩余的第二光致抗蚀剂图案。 在选择性蚀刻基板（例如，目标层）的一部分期间，将第二光致抗蚀剂图案用作蚀刻掩模。 使用第二光致抗蚀剂图案作为蚀刻掩模可以在衬底的蚀刻部分中产生比仅使用第一光致抗蚀剂图案可实现的更窄的线宽。

    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHY
    6.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHY 有权
    使用光刻技术制造半导体器件的方法

    公开(公告)号：US20110294072A1

    公开(公告)日：2011-12-01

    申请号：US13117667

    申请日：2011-05-27

    申请人： Mi-Ra PARK ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    发明人： Mi-Ra PARK ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    IPC分类号： G03F7/20

    CPC分类号： H01L21/0273 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/40

    摘要： A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.

    摘要翻译： 使用光刻工艺制造半导体器件的方法可以包括在下表面上形成抗反射层和第一光致抗蚀剂膜。 可以将第一光致抗蚀剂膜暴露于光，并且可以通过显影第一光致抗蚀剂膜来形成具有第一开口的第一光致抗蚀剂图案。 可以在第一光致抗蚀剂图案上进行等离子体处理，并且可以在可以暴露于光的第一光致抗蚀剂图案上形成第二光致抗蚀剂膜。 可以通过显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案以具有第二开口。 这里，第二开口可以比第一开口窄得多。

    Methods of manufacturing semiconductor devices using photolithography
    7.
    发明授权
    Methods of manufacturing semiconductor devices using photolithography 有权
    使用光刻制造半导体器件的方法

    公开(公告)号：US08551689B2

    公开(公告)日：2013-10-08

    申请号：US13117667

    申请日：2011-05-27

    申请人： Mi-Ra Park ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    发明人： Mi-Ra Park ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    IPC分类号： G03F7/26

    CPC分类号： H01L21/0273 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/40

    摘要： A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.

    摘要翻译： 使用光刻工艺制造半导体器件的方法可以包括在下表面上形成抗反射层和第一光致抗蚀剂膜。 可以将第一光致抗蚀剂膜暴露于光，并且可以通过显影第一光致抗蚀剂膜来形成具有第一开口的第一光致抗蚀剂图案。 可以在第一光致抗蚀剂图案上进行等离子体处理，并且可以在可以暴露于光的第一光致抗蚀剂图案上形成第二光致抗蚀剂膜。 可以通过显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案以具有第二开口。 这里，第二开口可以比第一开口窄得多。