摘要:
A bias circuit for generating a bias voltage that tracks power supply voltage variations, and that is compensated for variations in p-channel transistor and process parameters, is disclosed. The bias circuit includes a voltage divider, such as a resistor divider, that produces a ratioed voltage based on the power supply voltage to be tracked. The ratioed voltage is applied to a first input of a differential stage, the output of which is applied to an intermediate stage including a drive transistor and a load; the second input of the differential stage receives a feedback voltage from an intermediate node that is connected to the source of a p-channel modulating transistor that has its gate biased so as to be in saturation, for example at ground. The current conducted by the p-channel modulating transistor depends upon the ratioed voltage from the voltage divider, and also on its transistor characteristics. This current is applied, via an output stage, to produce a reference voltage that tracks power supply voltage variations. This reference voltage may be applied, individually or in combination with an n-channel compensated reference voltage, to an output buffer to control output drive slew rates, or to a current source.
摘要:
A method and circuit for significantly reducing a delay added to a clock signal which clocks an output of a first circuit into an input of a second circuit in a semiconductor device. An output of a first circuit is connected to a data line. The first circuit is designed with elements having a selected set of design parameters, such as transistor dimensions and transistor orientation. A second circuit is connected to the data line and also receives a clock signal generated by a signal delay circuit. The signal delay circuit receives an output enable signal, and after a delay period, produces the clock signal in response to the output enable signal. At least a portion of the signal delay circuit utilizes elements having the selected set of design parameters utilized in the first circuit. Thus, as process variations affect the electrical properties and the speed of the transistors in the first circuit, the same process variations will proportionately affect the electrical properties and speed of transistors in the delay circuit. This automatically compensates for process-induced speed variations and eliminates the need for a time margin when providing a clock signal for clocking an output of a first circuit into the input of a second circuit.
摘要:
A redundancy structure having fewer pass gates in the redundant decoder for quicker access to a redundant columns and a reduction in the complexity of the redundancy structure.
摘要:
An output driver circuit for an integrated circuit is disclosed, where the output driver drives an output terminal with a high logic level having a voltage limited from the power supply voltage of the integrated circuit. The limited voltage is provided by applying a limited output high voltage to an output buffer, such that the drive signal applied to the gate of the pull-up transistor in the output driver is limited by the limited output high voltage applied to the output buffer. A voltage reference and regulator circuit for generating the limited output high voltage is also disclosed, and is based on a current mirror. The sum of the current in the current mirror is controlled by a bias current source, which may be dynamically controlled within the operating cycle or programmed by way of fuses. An offset compensating current source adds current into the reference leg of the current mirror to eliminate the development of an offset voltage in the current mirror, and the limited output high voltage is shifted by the threshold voltage of the pull-up drive transistor by way of a threshold shift circuit.
摘要:
A dual-port data cache is provided having one port dedicated to servicing a local processor and a second port dedicated to servicing a system. The dual-port data cache is also capable of a high speed transfer of a line or lines of entries by placing the dual-port data cache in "burst mode." Burst mode may be utilized with either a read or a write operation. An initial address is latched internally, and a word line in the memory array is activated during the entire data transfer. A control circuit is utilized to cycle through and access a number of column addresses without having to provide a separate address for each operation.
摘要:
According to the present invention, an integrated circuit device is capable of responding to more than one input threshold voltage level by making only minimal changes to the device. The input buffer of the integrated circuit device is modified to be a programmable buffer that is controlled by a control input signal which may be generated by several different control means. Such control means include a bond option, a mask option, a fuse option, a register option, and a voltage detector option.
摘要:
According to the present invention, after a test data pattern has been written to selected static memory cells, the wordlines of the memory cells are turned off and the bitline true and bitline complement of the memory cells are simultaneously pulled to a predetermined logic level for the duration of the long write test so that the memory cells are disturbed. After the long write test, the contents of the memory cells are read to determine which memory cells contain corrupted data and therefore have bitline to memory cell leakage problems.
摘要:
An output driver circuit for an integrated circuit is disclosed, where the output driver drives an output terminal with a high logic level having a voltage limited from the power supply voltage of the integrated circuit. The limited voltage is provided by applying a limited output high voltage to an output buffer, such that the drive signal applied to the gate of the pull-up transistor in the output driver is limited by the limited output high voltage applied to the output buffer. A voltage reference and regulator circuit for generating the limited output high voltage, or for generating a reference voltage for application to a circuit other than an output buffer and that demands sink current, is also disclosed. The voltage reference and regulator is based on a current mirror, in which the sum of the current in the current mirror is controlled by a bias current source which may be dynamically controlled within the operating cycle or programmed by way of fuses. A sink current path circuit, according to various alternatives, is disclosed as providing an additional sink current path in the event that the limited output high voltage, or reference voltage, exceeds the desired level.
摘要:
A memory device, which communicates with external address and data buses, includes a circuit for mapping a redundant memory column having a redundant memory cell to an address of a defective memory column. An enable line communicates with the redundant memory column and selectively carries active and inactive signal levels for respectively enabling and disabling communication between the data bus and the redundant memory cell. An address decoder receives an address signal on the address bus and generates the active level on the enable line when the value of the address signal equals the address of the defective memory cell. A driver precharges the enable line to the inactive level while the address signal is invalid.
摘要:
A system for providing a CMOS NOR function that is distributed across a number of devices located on different chips. Specifically the present invention may be implemented in tag RAMs to provide expanded addressing. In other words, larger addresses may be processed using the present invention. This function is provided by using some transistors on each chip as part of the CMOS NOR gate. The tag RAM includes: a first input for receiving a first portion of an address, a second input for receiving a second portion of the address; a memory array connected to the first input; a comparator connected to the memory array and the second input, wherein the comparator has an output that produces an output signal in response to receiving a first signal from the second input and a second signal from the memory array; a first transistor having a gate connected to the output of the comparator, a first source/drain connected to a first pin, and a second source/drain connected to a second pin; and a second transistor having a gate connected to the output of the comparator, a first source/drain connected to the output pin, a second source/drain connected to a lower power supply voltage source.