摘要:
A photosensitive region includes a semiconductor substrate 40 made of a P-type semiconductor, and N-type semiconductor regions 41 and 42 formed on the surface of the semiconductor substrate 40. Accordingly, each photosensitive portion includes a portion of the semiconductor substrate 40 and a pair of the regions 41 and 42, thus configuring a photodiode. Each of the regions 41 and 42 is in a shape of an approximate triangle, and is formed so that one side of the regions 41 is adjacent to one side of the region 42, and vice versa, in one pixel. A first wire 44 is for electrically connecting the regions 41 on one side in each pixel across a first direction, and is provided extending in the first direction between the pixels. The second wire 47 is for electrically connecting the regions 47 on the other side in each pixel across a second direction, and is provided extending in the second direction between the pixels.
摘要:
The first opening 31 and second opening 32 are formed in the rotating plate 3 attached to the rotation axis 2 of an absolute encoder 1 in a prescribed positional relation, and a two-dimensional profile sensor 5 is installed so as to face the lower side 3a of the rotating plate 3. Also, a light supplying unit 4 consisting of light sources 41 and 42 is installed so as to face the photosensitive area of the profile sensor 5 with the openings 31 and 32 of the rotating plate 3 placed therebetween. And, based on a correlation between the first detected position P1 and second detected position P2 where measuring light emitted from the light sources 41 and 42 is passed through the openings 31 and 32 of the rotating plate 3 and is detected by the profile sensor 5, an absolute value of the rotating angle of the rotation axis 2 is calculated, wherein it is possible to achieve an absolute encoder capable of accurately measuring the absolute value of the rotating angle of the rotation axis with a simple construction.
摘要:
A photodetecting unit 5 comprises a photosensitive region 10, a first signal processing circuit 20, and a second signal processing circuit 30. In photosensitive region 10, pixels 11mn are arrayed two-dimensionally in M rows and N columns. One pixel is arranged by adjacently positioning in the same plane a photosensitive portion 12mn and a photosensitive portion 13mn, each outputting a current that is in accordance with the intensity of light that is made incident thereon. Across each of the pluralities of pixels 1111 to 111N, . . . , 11M1 to 11MN, aligned in a first direction in the two-dimensional array, one photosensitive portion 12mn of each corresponding pixel is electrically connected to the same photosensitive portion 12mn of each of the other corresponding pixels. Also across each of the pluralities of pixels 1111 to 11M1, . . . , 111N to 11MN, aligned in a second direction in the two-dimensional array, the other photosensitive portion 13mn of each corresponding pixel is connected to the same photosensitive portion 13mn of each of the other corresponding pixels.
摘要:
Photodetector 1 is equipped with photodiodes PDn, integrating circuits 10n, CDS circuits 20n, and hold circuits 30n. Each integrating circuit 10n includes an amplifier 11n, a capacitor C, and a switch SW. Photodiodes PDn are aligned on a first substrate 100. A differential pair input part (transistors T1 and T2) of amplifier 11n, capacitor C, etc., of each integrating circuit 10n are disposed on a second substrate 200. A drive part (transistors T5 and T6) of amplifier 11n, etc., of each integrating circuit 10n are disposed on a third substrate 300.
摘要:
A pixel section Pm,n includes a photodiode PD, a first capacitance section C1, a second capacitance section C2, and transistors T1-T6. The transistor T1 transfers the electric charge generated by the photodiode PD to the first capacitance section C1. The transistor T2 transfers the electric charge generated by the photodiode PD to the second capacitance section C2. The amplification transistor T3 outputs a voltage value corresponding to the amount of electric charge accumulated in the first capacitance section C1. The transistor T4 selectively outputs to the wiring L1,n the voltage value outputted from the amplification transistor T3. The transistors T3 and T4 constitute a source follower circuit. The transistors T5 and T6 selectively output to the wiring L2,n the electric charge accumulated in each of the first capacitance section C1 and the second capacitance section C2.
摘要:
An A/D conversion circuit 20 comprises a coupling capacitor C201, feedback capacitor C202, switch SW202, amplifier 201, comparison portion 202, capacitance control portion 203, and variable capacitance portions 210, 220, and 230. The variable capacitance portion 210 comprises capacitors C211 to C214 and switches SW211 to SW214. One end of each of the capacitors C211 to C214 is connected to the inverted input terminal of the amplifier 201, and the other end is connected, via the respective switches SW211 to SW214, to either the reference voltage Vref1 or to the common voltage Vcom.
摘要:
A signal current I1 that is output from output terminal of semiconductor position detection element is converted to a signal voltage V1 by a current/voltage conversion unit and a signal current I2 that is output from output terminal is converted to a signal voltage V2 by a current/voltage conversion unit. Signal voltages V1 and V2 are compared in magnitude by a comparison circuit and a comparison signal is output so that maximum signal Vmax and minimum signal Vmin are selected. In A/D conversion circuit, the A/D conversion range is set using maximum signal Vmax, and minimum signal Vmin is converted to a digital signal and output. The position of beam incidence on semiconductor position detection element is found by incidence position calculating unit using the comparison signal and digital signal.
摘要:
A light-emitting element drive circuit is provided whereby level variation of the drive current can be suppressed. This circuit is provided with a detection circuit 4 that detects the DC current component I6′ of high-frequency current I4 (I5) flowing through a second current mirror circuit 2, and an adjustment circuit 5 that subtracts the DC current component I6′ detected by the detection circuit 4 from the DC current I1 (I7) flowing through line 1B of first current mirror circuit 1. Thus, level variation of the drive current IL′ which represents the superposition of the DC and high-frequency can be suppressed.
摘要:
A digital X-ray imaging apparatus comprises an X-ray generator 6 for generating X-rays toward a subject, an X-ray imaging device 7 for detecting an image of X-rays having passed through the subject, a swivel member 4 and a horizontal movement means 8 provided with the X-ray generator 6 and the X-ray imaging device 7 opposed to each other to relatively move the X-ray generator 6 and the X-ray imaging device 7 with respect to the subject, a CPU 21 for producing a tomographic image in accordance with an imaging signal from the X-ray imaging device 7, frame memories and an image display unit 26 for displaying the tomographic image. The X-ray imaging device 7 includes a MOS image sensor having a plurality of two-dimensional light-receiving pixels. With this configuration, a tomographic image along a given tomographic plane can be produced by a signal X-ray imaging operation, and the imaging sensitivity of the digital X-ray imaging apparatus can be enhanced.
摘要:
A solid image pickup device for optical measurement with a high signal to noise ratio. A photosensitive unit includes a first integrator that integrates a signal in a first capacitor connected between an input and output thereof triggered by a first reset signal, a second integrator that integrates a signal in a third capacitor triggered by a second reset signal, a switching device and a second capacitor connecting the output of the first integrator to the input of the second integrator, an up/down counter and a timing control circuit for operating the other elements to achieve proper integration.