METHOD AND SYSTEM FOR ENDPOINT DETECTION
    91.
    发明申请
    METHOD AND SYSTEM FOR ENDPOINT DETECTION 有权
    用于端点检测的方法和系统

    公开(公告)号:US20110189926A1

    公开(公告)日:2011-08-04

    申请号:US13085030

    申请日:2011-04-12

    Applicant: Moshe Finarov

    Inventor: Moshe Finarov

    CPC classification number: B05C11/1005 B24B37/013 B24B49/04 B24B49/12

    Abstract: A method and system are presented for monitoring a process sequentially applied to a stream of substantially identical articles by a processing tool, so as to terminate the operation of the processing tool upon detecting an end-point signal corresponding to a predetermined value of a desired parameter of the article being processed. The article is processed with the processing tool. Upon completing the processing in response to the end-point signal generated by an end-point detector continuously operating during the processing of the article, integrated monitoring is applied to the processed article to measure the value of the desired parameter. The measured value of the desired parameter is analyzed to determine a correction value thereof to be used for adjusting the end-point signal corresponding to the predetermined value of the desired parameter for terminating the processing of the next article in the stream.

    Abstract translation: 提出了一种方法和系统,用于通过处理工具监视顺序地施加到基本上相同的物品流的处理,以便在检测到对应于期望参数的预定值的终点信号时终止处理工具的操作 的被处理物品。 文章用处理工具处理。 一旦响应由在物品处理过程中持续运行的端点检测器产生的终点信号完成处理,则将综合监控应用于经处理的物品以测量所需参数的值。 分析所需参数的测量值以确定其用于调整对应于期望参数的预定值的终点信号的修正值,以终止流中下一个物品的处理。

    Method and system for endpoint detection
    92.
    发明授权
    Method and system for endpoint detection 有权
    端点检测方法和系统

    公开(公告)号:US07927184B2

    公开(公告)日:2011-04-19

    申请号:US12608112

    申请日:2009-10-29

    Applicant: Moshe Finarov

    Inventor: Moshe Finarov

    CPC classification number: B05C11/1005 B24B37/013 B24B49/04 B24B49/12

    Abstract: A method and system are presented for monitoring a process sequentially applied to a stream of substantially identical articles by a processing tool, so as to terminate the operation of the processing tool upon detecting an end-point signal corresponding to a predetermined value of a desired parameter of the article being processed. The article is processed with the processing tool. Upon completing the processing in response to the end-point signal generated by an end-point detector continuously operating during the processing of the article, integrated monitoring is applied to the processed article to measure the value of the desired parameter. The measured value of the desired parameter is analyzed to determine a correction value thereof to be used for adjusting the end-point signal corresponding to the predetermined value of the desired parameter for terminating the processing of the next article in the stream.

    Abstract translation: 提出了一种方法和系统,用于通过处理工具监视顺序地施加到基本上相同的物品流的处理,以便在检测到对应于期望参数的预定值的终点信号时终止处理工具的操作 的被处理物品。 文章用处理工具处理。 一旦响应由在物品处理过程中持续运行的端点检测器产生的终点信号完成处理,则将综合监控应用于经处理的物品以测量所需参数的值。 分析所需参数的测量值以确定其用于调整对应于期望参数的预定值的终点信号的修正值,以终止流中下一个物品的处理。

    Method and system for measuring patterned structures
    93.
    发明授权
    Method and system for measuring patterned structures 有权
    用于测量图案结构的方法和系统

    公开(公告)号:US07864344B1

    公开(公告)日:2011-01-04

    申请号:US12853453

    申请日:2010-08-10

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

    Abstract translation: 提出了一种用于确定图案化结构中的线轮廓的方法和系统,其目的在于控制该结构的制造过程。 图案化结构包括多个不同的层,结构中的图案由图案化区域和未图案化区域形成。 进行至少第一次和第二次测量,每次利用具有在一定入射角度指向结构的入射光的宽波长带的结构照明,检测从该结构返回的光的光谱特性,以及产生测量 数据代表。 分析通过第一测量获得的测量数据,从而确定结构的至少一个参数。 然后,利用该确定的参数,同时分析通过第二测量获得的测量数据,使得能够确定结构的轮廓。

    Method and system for measuring patterned structures
    94.
    发明授权
    Method and system for measuring patterned structures 有权
    用于测量图案结构的方法和系统

    公开(公告)号:US07663768B2

    公开(公告)日:2010-02-16

    申请号:US11931435

    申请日:2007-10-31

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

    Abstract translation: 提出了一种用于确定图案化结构中的线轮廓的方法和系统,其目的在于控制该结构的制造过程。 图案化结构包括多个不同的层,结构中的图案由图案化区域和未图案化区域形成。 进行至少第一次和第二次测量,每次利用具有在一定入射角度指向结构的入射光的宽波长带的结构照明,检测从该结构返回的光的光谱特性,以及产生测量 数据代表。 分析通过第一测量获得的测量数据,从而确定结构的至少一个参数。 然后,利用该确定的参数,同时分析通过第二测量获得的测量数据,使得能够确定结构的轮廓。

    Method and system for measuring patterned structures
    95.
    发明授权
    Method and system for measuring patterned structures 有权
    用于测量图案结构的方法和系统

    公开(公告)号:US07626711B2

    公开(公告)日:2009-12-01

    申请号:US11931520

    申请日:2007-10-31

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

    Abstract translation: 提出了一种用于确定图案化结构中的线轮廓的方法和系统,其目的在于控制该结构的制造过程。 图案化结构包括多个不同的层,结构中的图案由图案化区域和未图案化区域形成。 进行至少第一次和第二次测量,每次利用具有在一定入射角度指向结构的入射光的宽波长带的结构照明,检测从该结构返回的光的光谱特性,以及产生测量 数据代表。 分析通过第一测量获得的测量数据,从而确定结构的至少一个参数。 然后,利用该确定的参数,同时分析通过第二测量获得的测量数据,使得能够确定结构的轮廓。

    METHOD AND SYSTEM FOR MEASURING PATTERNED STRUCTURES
    96.
    发明申请
    METHOD AND SYSTEM FOR MEASURING PATTERNED STRUCTURES 失效
    用于测量图形结构的方法和系统

    公开(公告)号:US20090161123A1

    公开(公告)日:2009-06-25

    申请号:US12389890

    申请日:2009-02-20

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

    Abstract translation: 提出了一种用于确定图案化结构中的线轮廓的方法和系统,其目的在于控制该结构的制造过程。 图案化结构包括多个不同的层,结构中的图案由图案化区域和未图案化区域形成。 进行至少第一次和第二次测量,每次利用具有在一定入射角度指向结构的入射光的宽波长带的结构照明,检测从该结构返回的光的光谱特性,以及产生测量 数据代表。 分析通过第一测量获得的测量数据,从而确定结构的至少一个参数。 然后,利用该确定的参数,同时分析通过第二测量获得的测量数据,使得能够确定结构的轮廓。

    Two-dimensional beam deflector
    98.
    再颁专利
    Two-dimensional beam deflector 有权
    二维光束偏转器

    公开(公告)号:USRE40225E1

    公开(公告)日:2008-04-08

    申请号:US10284308

    申请日:2002-10-31

    Applicant: Moshe Finarov

    Inventor: Moshe Finarov

    CPC classification number: G03F7/70483 G01B11/065 G03F7/70358 G03F7/704

    Abstract: A two dimensional beam deflector is disclosed which deflects beams from multiple optical assemblies. The input of beams of the multiple optical assemblies follow parallel optical paths until deflection to a wafer. An ellipsometer using a two-dimensional beam deflector is also disclosed.

    Abstract translation: 公开了一种二维光束偏转器,其偏转来自多个光学组件的光束。 多个光学组件的光束的输入遵循平行光路,直到偏转到晶片。 还公开了使用二维光束偏转器的椭偏仪。

    METHOD AND SYSTEM FOR MEASURING PATTERNED STRUCTURES

    公开(公告)号:US20080068611A1

    公开(公告)日:2008-03-20

    申请号:US11931598

    申请日:2007-10-31

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

    METHOD AND SYSTEM FOR MEASURING PATTERNED STRUCTURES

    公开(公告)号:US20080055609A1

    公开(公告)日:2008-03-06

    申请号:US11931169

    申请日:2007-10-31

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

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