Solar cells and method of manufacturing thereof
    2.
    发明授权
    Solar cells and method of manufacturing thereof 有权
    太阳能电池及其制造方法

    公开(公告)号:US08652872B2

    公开(公告)日:2014-02-18

    申请号:US13123532

    申请日:2009-10-12

    CPC classification number: H01L31/022425 C23C14/28 H01L31/0682 Y02E10/547

    Abstract: A photovoltaic cell, the cell comprising: a silicon substrate of bulk silicon material having front and rear surfaces; an emitter layer on the rear surface of said substrate; elongate channels through the emitter layer; elongate contacts to the bulk of the silicon substrate within at least some of the elongate channels, wherein the contacts are narrower than the channels; and gaps in the emitter between at least some of the elongate contacts and the emitter layer on the sides of the contacts.

    Abstract translation: 一种光伏电池,所述电池包括:具有前表面和后表面的体硅材料的硅衬底; 在所述衬底的后表面上的发射极层; 细长通道穿过发射极层; 在至少一些细长通道内的硅衬底本体的细长接触,其中触点比通道窄; 以及发射器中至少一些细长触头和触点侧面上的发射极层之间的间隙。

    Method and system for measuring patterned structures

    公开(公告)号:US08023122B2

    公开(公告)日:2011-09-20

    申请号:US12838763

    申请日:2010-07-19

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

    Method and system for measuring patterned structures
    5.
    发明授权
    Method and system for measuring patterned structures 有权
    用于测量图案结构的方法和系统

    公开(公告)号:US07864343B2

    公开(公告)日:2011-01-04

    申请号:US12624555

    申请日:2009-11-24

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method of preparation of reference data for measuring the profile of a patterned structure for use in control of a manufacturing process, the method including: providing a model for generating profiles based on the manufacturing process; generating the profiles by simulation of the manufacturing process; and preparing diffraction signal reference data corresponding to the generated profiles.

    Abstract translation: 一种制备参考数据的方法,用于测量用于控制制造过程的图案化结构的轮廓,所述方法包括:提供用于基于制造过程产生轮廓的模型; 通过模拟制造过程生成轮廓; 并准备对应于所生成的轮廓的衍射信号参考数据。

    METHOD AND SYSTEM FOR MEASURING PATTERNED STRUCTURES

    公开(公告)号:US20100324865A1

    公开(公告)日:2010-12-23

    申请号:US12853453

    申请日:2010-08-10

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

    APPARATUS AND METHOD FOR SUBSTRATE HANDLING
    7.
    发明申请
    APPARATUS AND METHOD FOR SUBSTRATE HANDLING 审中-公开
    基板处理装置及方法

    公开(公告)号:US20100204820A1

    公开(公告)日:2010-08-12

    申请号:US12602770

    申请日:2008-06-05

    CPC classification number: H01L21/681 H01L21/68728

    Abstract: A system for substrate handling proposed, comprising an optical local tilt detector, a plurality of arms each having vertically extended movable along vertical axis fingers to contact the edge of a substrate, wherein at least one of the arms has a linear actuator moveable arm and each of the fingers provided by z-axis miniature linear actuator; and a control unit connected to said tilt detector and said z-axis linear actuators enabling measuring and correcting of local tilt.

    Abstract translation: 提出了一种用于基板处理的系统,包括光学局部倾斜检测器,多个臂,每个臂具有垂直延伸,可沿着垂直轴指可移动以接触基板的边缘,其中至少一个臂具有线性致动器可动臂和每个 由z轴微型线性致动器提供的手指; 以及连接到所述倾斜检测器和所述z轴线性致动器的控制单元,其能够测量和校正局部倾斜。

    Method and system for measuring patterned structures

    公开(公告)号:US07760368B2

    公开(公告)日:2010-07-20

    申请号:US11931342

    申请日:2007-10-31

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

    APPARATUS FOR OPTICAL INSPECTION OF WAFERS DURING POLISHING
    9.
    发明申请
    APPARATUS FOR OPTICAL INSPECTION OF WAFERS DURING POLISHING 审中-公开
    在抛光期间光学检测波形的装置

    公开(公告)号:US20080297794A1

    公开(公告)日:2008-12-04

    申请号:US12188624

    申请日:2008-08-08

    Applicant: Moshe Finarov

    Inventor: Moshe Finarov

    Abstract: A measurement system installable within a processing equipment and more specifically within the exit station of a polishing machine. The optical scheme of this system includes a spectrophotometric channel, an imaging channel and also means for holding the wafer under measurement.

    Abstract translation: 测量系统可安装在处理设备内,更具体地可在抛光机的出口站内。 该系统的光学方案包括分光光度通道,成像通道以及用于保持测量晶片的装置。

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